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Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling

[IEEE 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012 - Montreal, QC, Canada (2012.06.17-2012.06.22)] 2012 IEEE/MTT-S International Microwave Symposium Digest - Fast extraction

Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part II: Characterization

Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part I: Process Development

Nonfamily Managers, Family Firms, and the Winner's Curse: The Influence of Noneconomic Goals and Bounded Rationality

Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition

On the Electrostatics of Bernal-Stacked Few-Layer Graphene on Surface-Passivated Semiconductors

Natural convection of non-Newtonian power-law fluids on a horizontal plate

Seismic Liquefaction Hazard and Site Response for Design of Piles in Mumbai City

Proposal for all-graphene monolithic logic circuits

Graphene nanoribbon based negative resistance device for ultra-low voltage digital logic applications

Low-Frequency Noise in Bilayer MoS 2 Transistor

Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

[IEEE 2009 Asia and South Pacific Design Automation Conference (ASP-DAC) - Yokohama, Japan (2009.01.19-2009.01.22)] 2009 Asia and South Pacific Design Automation Conference - High-speed

Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

Measurement and stability of the pointing of the BepiColombo Laser Altimeter under thermal load

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - High-performance few-layer-MoS2

[IEEE 2010 IEEE International Interconnect Technology Conference - IITC - Burlingame, CA, USA (2010.06.6-2010.06.9)] 2010 IEEE International Interconnect Technology Conference - AC

Accurate Intrinsic Gate Capacitance Model for Carbon Nanotube-Array Based FETs Considering Screening Effect