Summary Presentation: Sensors, Devices, Components

Reza Langari, Rusty Harris, Christi Madsen, Robert Nevels, Alexander Parlos, Weiping Shi

April 17, 2013

About us

H. Rusty HarrisAssistant Professor of Electrical & Computer Engineering

Christi MadsenProfessor of Electrical & Computer Engineering

Robert NevelsProfessor of Electrical & Computer Engineering

Alexander ParlosProfessor of Mechanical Engineering

Weiping ShiProfessor of Electrical & Computer Engineering

Reza LangariProfessor of Mechanical Engineering

Hybrid Vehicles

HEV Energy ManagementReza Langari

Driving InformationExtraction

SOC Compensator(SC)

SOC Compensation

Driving DataRepository

Driving InformationExtractor

(DIE)

Tec,SOC

Tec,FTD

Driving SituationIdentification

Driving StyleIdentifier

(DSI)

Roadway TypeIdentifier

(RTI)Fuzzy Torque

Distributor(FTD)

Torque Distribution

Roadway Type &Level of Congestion

Driver Style

Tec,TD

Tec,TD

Tec

Driving environment(Real-time Data Update)

Vehicle state

Te

iuT

ltT

stT

0ltT

Initial setting ofRoadway type and Driver style

(No activation of RTI,DSI)

3

Hybrid Vehicles

Power Generation

Wind Energy

Oil and Gas Production EMCS Systems

Sensor Fault DiagnosisReza Langari

4

Issues of Concern:

Tools & Techniques:

Functional Performance

Auto-Associative Neural Networks

Mixture of ProbabilisticPCA

Phase SpaceReconstruction

Sensor Fault Diagnosis

Nanoscale Research in EnergyRusty Harris

GaN/Diamond for Power Management Devices

Diamond

Solar Antenna and THz signal management

GaN epitaxy for Energy and Device research

kV Device Designs for power grid applicationsPhonon

Cooper Pairs

Quasiparticle Diffusion and trapping by W

Al

Ge

W

Dissociated Cooper Pairs(quasiparticles)

Ge

Al bias lines (pos and neg biasing)

100’s of us

10’s of us

Electron/hole pairs

Scal

ed y

ield

(Ioni

zatio

n ra

te) /

(Rec

oil

Ener

gy)

Recoil Energy

Materials and Devices for Dark Matter Research

Sponsors

Dielectrics for advanced storage devices

GaN/AlGaN

Diamond

High and Medium Voltage GaN Device Research -Rusty Harris

• DC Distribution is localized to high-and low-level voltage regimes (red)

– Small exception: transportation

• Need lower loss Medium Voltage device switching

http://smartgridsherpa.com/blog/building-a-dc-electric-power-grid-%E2%80%93-fact-or-fiction

High-freq PWM, bidirectional-blocking GaN converter

GaNH-bridge

High-freqac link

x-formerD

S

GaN Bi-directional converter

ripple port: 120 Hz energy

storage

Film Cap voltage

High-freqInput filter

ac port: 60Hz AC

n series connected output bridge

output filter

dc port

AlGaN

Metal Gate

InGaN (10%)

Gate Dielectrics DS

i-AlN on Si(111)Spacer Dielectric

D

S

D

S

D

S

• GaN device research focused on non-flyback symmetric power switches with CMOS compatibility

– low Ron, Higher freq., high T

High Voltage Limitations –Rusty Harris

• Problem: GaN promises better Vbr-Roncharacteristics, but literature doesn’t deliver

• Lower Eg compared to SiC, but…• Low Ron due to 2D Electron Gas and

higher mobility

• Extensive device and materials research shows that limitation is due to inherent device design

SOURCE DRAIN

Ta/Al/Ta

2 µm GaN

LGD = 15 μmLG = 5 μm LGS = 9 μm

HR (111) Si

Ni

Al0.24Ga0.76NALD HfO2

PECVD SiNPECVD SiO2Recess

GaN Device Research Focus to improve Vbr-Ron – R. Harris

Contrast Layer

GaN

GaON

HfO2

(b)(a)

1122 1120 1118 1116 1114 1112

Ga-ONGaN

Ga2O3

ALD HfO2 / GaN

HCl Cleaned GaN

Ga 2p

Norm

alize

d In

tens

ity (a

.u.)

Binding Energy (eV)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

-7 -6 -5 -4 -3 -2 -1 0 1 2

I Dm

ax(A

/mm

)

Threshold Voltage (V)

Au-Free AlGaN/GaN Technologies

MIT2011

IMECMay 2012

IMECJune 2012

ON Semi.June 2012

Texas A&M / SEMATECHAug. 2012

Texas A&M / SEMATECHOct. 2012

Nat. Univ. of SingaporeApr. 2012

Nanyang Tech. Univ.Nov. 2012

Better device designs with improved electrostatics

Integration improvements with Diamond and high Vbr materials

Elegant dielectric and interface improvements to reduce device loss

Integration in Si CMOS of GaN devices with record enhancement mode operation/drive

current capability

Diamond Thermal layer with GaNheterostructures

Planar Solar Concentrators Madsen

• Why Planar Concentrators?– High light intensity is required either for higher temperature (solar-thermal) or

higher efficiency/lower cost (photovoltaics);– Secondary concentration alleviates connection, cooling and uniformity issues;– Waveguides are cheap, robust and can be easily fabricated.

• Planar Waveguide Concentrator:– Integrated mirror-waveguide array serves as a near-ideal secondary 2D

concentrator– Efficient, homogenous output, 3D-2D hybrid concentration– Tolerates large incident angles for relaxed tracking tolerance

hD

h≥0.3D

h≤1cm

Not to scale, Slab concentrator

h

Polymer Waveguide

Lens Arrays

Photovoltaic cells

Planar Solar Concentrator Demonstration - Madsen

• Proof-of-concept Demonstration– Polymer-on-glass waveguides– Turning mirror for lens-to-waveguide coupling– Goal: high optical concentration and efficiency

• Status:– Fabricated polymer waveguides on silica– Fabricated 45-degree turning mirrors – Coupled white light into waveguides using a lens to focus light

on one or more of the turning mirrors.

Turning mirror using total internal reflection

Multi-waveguide illumination

http://www.engadget.com/2011/05/17/mizzou-professor-says-nantenna-solar-sheet-soaks-up-90-percent-o/

Need a broadband method of collecting and harvesting solar energy

However…

Current Solar Nantennaresearch has no clear path toward harnessing the energy from absorbed solar radiation.

In fact, no clear proof of concept has really been proposed.

500 1000 1500 2000 25000.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Irra

dian

ce (W/(m

-2 n

m-1))

Wavelength (nm)

AM 1.5 Global Tilt

21% efficient solar cell

Systematic Solar Antenna Bob Nevels and Rusty Harris

Research Approach

• Integrate simple physical systems that demonstrate optical absorption in a “classical” sense– Or disprove the possibility so that research can be better focused in the

future

• Initial pathways to testing antenna operability with respect to solar coherence and polarization

Nanoscale nantenna with wide range polarization angle acceptance, designed for visible light absorption

Substrate is dielectric matched (Sapphire, Oxide, semi-insulating semiconductor, etc.)

Impedance matched lossydielectric with known emissivity-temperature dependence

Experimental approach

(3)Incident single wavelength, uniformly polarized light (400-800 nm)(dark environment)

(5)Resistive dielectric at antenna nexus will dissipate energy absorbed on the antenna in the form of head

(4)Electric field (THz level) established in antenna at antenna nexus

(6)Known emissivity and thermal imaging with respect to that of a reference sample with no antenna will give valuable information about impedance matching, absorption efficiency, and spectral influences

(1)Design and simulation of realistic antenna structures with materials integration of actual circuit elements at nanoscale

(2) Integration using e-beam lithography and other novel process techniques

Ê

120nm Cr nantennas

Isolation Plane

50nm Patch antenna

In situ etched region

Preliminary results

15 nm

5 nm

30 nm Glass

ITO10 nm

Incident Wave

10 nm10 nm

Simulations:Dielectric confinement of optical antennas results in field enhancement and more controllable spectral response.

Experimental:Large arrays of nano-scale broadband optical antennas have been developed with e-beam lithography and integrated into metal/dielectric systems

Experimental:An in situ technique is demonstrated that allows optical antenna isolation and in vacuointegration with dielectrics and metals

On-going Research

1. R. Nevels, G. R. Welch, P. S. Cremer, P. Hemmer, T. Phillips, S. Scully, A.V. Sokolov, A.A. Svidzinsky, H. Xia and M.O. Scully, “Visualizing and Detection of Single Molecules,” Molecular Physics, Vol.110, Issue 15-16,pp 1993-2000, Aug. 2012.2. Eyob A. Sete, Anatoly A. Svidzinsky, Hichem Eleuch, Robert D. Nevels, and Marlan O. Scully, “Correlated spontaneous emission on the Danube,” Journal of Modern Optics, Volume 57 Issue 14, 1311, 2010.3.Vipin Cholleti and Robert Nevels, “Nano-Antennas: Theory and Design,” Princeton-TAMU Quantum Optics Conference, Jackson Hole, Wyoming, 2009.4. R.D Nevels and Ic-Pyo Hong, “A Coaxial Line Fed Dipole Antenna Coated with a DNG Material,” IEEE-APS/URSI International Symposium Digest, 2008.

Robert Nevels, IEEE FellowProfessional Interests:Mathematical and Numerical Techniques in Electrodynamics, Electromagnetic Scattering, Microwave and Nano Antennas, Plasmonics.

E

Array structures for single molecule detection – Ref 1., 2. below.

E

Novel high Q and wide bandwidth plasmonic nano-antennas for microcircuit applications – Ref 3. below.

H. Rusty HarrisInterest Areas: Tunnel Transistors, GaN RF Transistors, Si Transport and Ballisticity, Nano-scale Lasers and Optical Amplifiers

[1] Z. Lu, J. G. Fossum, J.-W. Yang, H. R. Harris, V. P. Trivedi, M. Chu, and S. E. Thompson, “A Simplified, Superior Floating-Body/Gate DRAM Cell,” IEEE Electron Device Lett., vol. 30, pp. 282-284, March 2009.[2] Huang, J.; Kirsch, P.D.; Jungwoo Oh; Se Hoon Lee; Majhi, P.; Harris, H.R.; Gilmer, D.C.; Bersuker, G.; Dawei Heh; Chang SeoPark; Park, C.; Hsing-Huang Tseng; Jammy, R., "Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe," Electron Device Letters, IEEE , vol.30, no.3, pp.285-287, March 2009.[3] Chadwin D. Young, Ji-Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, and Hsing-Huang Tseng, J. “Hot carrier degradation in HfSiON/TiN fin shaped field effect transistor with different substrate orientations” Vac. Sci. Technol. B 27, 468 (2009).[4] Yang, J.-W.; Harris, H.R.; Bersuker, G.; Kang, C.Y.; Oh, J.; Lee, B.H.; Tseng, H.-H.; Jammy, R., "New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs," Electron Device Letters, IEEE, vol.30, no.1, pp.54-56, Jan. (2009).

• Expertise– Non-intrusive methods for remote asset monitoring;– Real-time assessment of mechanical/electrical failure risk & reliability;– Machine learning & statistical signal processing;– Intelligent control for machine life extension

aparlos@tamu.edu

Assessing mechanicalhealth & reliability

in real-timeUse of non-intrusivemonitoring methods

• Applications

Energy efficiencyin electro-mechanical systems Estimating energy conversion efficiency using non-intrusive

monitoring methods

Data-driven methods for machine useful life

predictionMachine learning and

Statistical signal processing

• Reduction in unplanneddowntime

• Reduction in MRO costs• Improved energy efficiency

• Flagging inefficient systems• Indicators to improve energy

efficiency• Accuracy within 1-2% of IEEE

122B standard

• Timing of planned outages• Elimination of unplanned

outages• Improved asset outage

management

Remote asset monitoringAlexander G. Parlos

Alexander G. Parlos• Origins of the non-intrusive monitoring concept

– Mid 1980s – consumption estimates or residential appliances from limited measurements at central switches

– Monitoring (sub-metering) and consumption disaggregation– Last 5 years resurgence of interest for “smart buildings” and “smart

homes”– Feedback into “smart grid” for potential energy savings

Alexander G. Parlos• Non-intrusive monitoring for industrial assets

– Consumption estimates for residential appliances & disaggregation not enough!

– Assessing asset risk & reliability is critical– Variable loading applications require estimates of energy efficiency, not

simply consumption measurements– Feedback into “smart grid” for outage planning & potential energy

savings

From “Sensing currents for maximum efficiency”, Energy Efficiency & Technology, Oct 1, 2012http://eetweb.com/Sensing-currents-maximum-efficiency/

–sub-metering often helps detect abnormal behaviors faster than traditional sensors such as temperature, pressure, vibration. Analysis of how these electrical parameters change over time even helps anticipate failures and plan predictive maintenance …

Alexander G. Parlos• Non-intrusive monitoring for industrial assets

– Mechanical & electrical condition assessment with no mechanical sensing

Signal Waveforms

Simple Retrofit Embedded Device

Voltages Currents

ElectricPowerSupply

CTs & PTs

Sensitivity of1 in 1,000,000

Assessment of • Risk of driver mechanical &

electrical failure• Risk of driven load failure• Energy consumption• Energy efficiency

Alexander G. Parlos• Non-intrusive monitoring for industrial assets

– Energy conversion efficiency estimation– Formulation of energy efficiency as adaptive state estimation– Tested against IEEE 112B standard– Test errors within 1% - 2% of IEEE 112B, for loads in 20% to 150% rated

Rated values

• Insulated Gate Bipolar Transistor – Three terminal power semiconductor device– Used as a fast electronic switch– Large IGBT modules can handle high voltages

and large currents• Advantages

– High input impedance MOS-gate control– Low forward-voltage drop

• Market grows fast– 20% per year

Design & Simulation of IGBWeiping Shi

IGBT Applications

• Electric trains, cars and ships

• Renewable energy switches

• Grid power T&D• Home appliances

3-D View of IGBT

• Design– Explore layout to maximum

current– Reduce current crowding and

heat

• Simulation– Fast 2D/3D device simulation

software– Reduce simulation time from

weeks to hours