Rad-hard Power Transistors for Space Application Transistor Division – Catania SpaceAutomotive...

Rad-hard

Power Transistors

for

Space Application

Primo Workshop Nazionale

"La Componentistica Nazionale per lo Spazio:

Stato dell’arte, Sviluppi e Prospettive"

ASI - Roma

18-20 gennaio 2016

Giuseppe Camonita

Hi-Rel Space Power Transitors

Marketing Manager

• Approximately 43,600 employees worldwide

• Approximately 8,700 people working in R&D

• 11 manufacturing sites

• Over 75 sales & marketing offices

• 1294 Patents in 2014

Front-End

Back-End

Research & Development

Main Sales & Marketing

STMicroelectronics at glance

• A global semiconductor leader

• 2014 revenues of $7.40B

2

Rad-hard Power Transistors for Space Application Giuseppe Camonita - Hi-Rel Space Power Transitors

STMicroelectronics presence in Italy

Total ST census in Italy at the end of 2014: 9583

Castelletto Design, R&D,

Sales & Marketing

Marcianise R&D,

Manufacturing,

Sales

Arzano Design, R&D

Lecce Design, R&D

Agrate Design, Technology

R&D, Manufacturing,

Marketing

Catania &

Palermo Design, Technology

R&D, Manufacturing,

Marketing

3


STMicroelectronics Catania

4

Technology

R&D

Wafer

production

150 mm

Wafer

production

200 mm

Product design

Application Lab

Marketing

Quality

Product Division

1472 1237 1245

1386 1165 1240

1558

1294

156 122 128 164 90 138 187 178

0

500

1000

1500

2000

2007 2008 2009 2010 2011 2012 2013 2014

Patents granted WW


Targeting areas

where ST leads

or will lead Focused

Product Portfolio SiC & GaN

High Voltage

SuperJunction

Low Voltage

Advanced

Trench

IGBT & IPM

Power Transistor Division – Catania

Space

Technology Development

and product design

in STM Catania

5


Motor control

Power conversion

Industrial

Automotive

PC & Server

Telecom DC-DC

Bipolar Transistors for Space

STMicroelectronics offer a wide range of Bipolar Transistors specifically designed, packaged, tested and

qualified in full compliance to the Aerospace standards defined by the qualifying agencies ESCC and DLA.

.

All part numbers are available in hermetic packages (LCC-3, UB, SMD.5, TO-257, TO-18, TO-39).

Other packages can be considered upon request.

Products are rated of 100 krad best in class performance LDR and VLDR according to test method

ESCC22900 and MIL-STD-750.

Each wafer of each production lot is tested in radiation.

Space exploration heritage

6

Rosetta satellite and its probe Philae contain >6500 transistors specifically designed and manufactured

Global presence in US, EMEA, China, India, Japan


Bipolar Transistors product range

Part number Type Vceo (V) Ic (A) hFE min Package T.I.D. ESCC QPL PRF 19500/

2N2219A NPN 40 0.8 100 TO-39 - 5201/003 -

2N2222A NPN 40 0.8 100 UB, LCC-3, TO-18 100krad 5201/002 255

2N2905A PNP 60 0.8 100 TO-39 - 5202/002 -

2N2907A PNP 60 0.8 100 UB, LCC-3, TO-18 100krad 5202/001 291

2N3700 NPN 80 1 100 UB, LCC-3, TO-18 100krad 5201/004 391

2N3019 NPN 80 1 100 TO-39 - 5201/011 -

2N5551 NPN 150 0.6 80 UB, LCC-3, TO-18 100krad 5201/019 767

2N5401 PNP 150 0.6 60 UB, LCC-3, TO-18 100krad 5202/014 766

2N2920A 2x NPN 60 0.03 300 LCC-6, Flat-8D - 5207/002 355

2N3810 2x PNP 60 0.05 150 LCC-6, Flat-8D - 5207/005 336

2N5154 NPN 80 5 70 TO-257, SMD.5, TO-39 100krad 5203/010 544

2N5153 PNP 80 5 70 TO-257, SMD.5, TO-39 100krad 5204/002 545

2ST3360K NPN / PNP 60 4 (pk) 160 Flat-8D 100krad - 773

Radiation validation test @ 50 / 70 / 100 krad and post 24h @ 25°C & 168h @ 100°C

Guarantee as per MIL-STD-750 Method 1019 (1/Hfe variation based)

7


DLA qualified part list

QPL available at www.landandmaritime.dla.mil/programs/psearch/default.aspx

www.landandmaritime.dla.mil/programs/psearch/default.aspx

8


http://www.landandmaritime.dla.mil/programs/psearch/default.aspx

100 krad Bipolar Transistors offer

Radiation test ESCC R JANSR

Wafer tested each each

Part tested 5 biased + 5 unbiased 5 biased + 5 unbiased

Dose Rate 0.1 rad/s 50 rad/s & 0.1 rad/s

Acceptance ESCC 22900 MIL-STD-750 TM 1019

Additional VLDR 0.01 rad/s charact. 0.01 rad/s charact.

Displacement Damage up to 2*1012 neutron/cm2 up to 2*1012 neutron/cm2

Agency Part Number 5201/002/04R MIL-PRF-19500/255

Part Number SOC2222ARHRG JANSR2222AUBG

Documentation CoC & RVT CoC & RVT

Part number

2N2222A Yes Yes

2N2907A Yes Yes

2N2920A Q1’16 Q2’16

2N3700 Yes Yes

2N3810 Yes Q1’16

2N5153 Yes Q3’16

2N5154 Yes Q3’16

2N5401 Yes Yes

2N5551 Yes Yes

9


Bipolar Transistors dose rate comparison HDR: 50 rad/s.

LDR: 0.1 rad/s.

VLDR: 0.01 rad/s.

10

2N2222A 2N2907A

2N3700 2N3810


HFE vs IC and radiation (TID 0.1 rad/sec.)

11

2N5551 (NPN, 160V, 0.5A)

2N5154 (NPN, 80V, 5A) 2N5153 (PNP, 80V, 5A)

2N3700 (NPN, 100V, 1A)


Medium Power technology

Bipolar Transistors

NPN and PNP complementary pair

2ST3360K

High density cells and multi-layer interconnection.

High current gain and linearity behaviour

Low Vcesat and fast switching

Optimized matching NPN and PNP

Radiation hardness (HFE > 100 @ 100krad LDR)

key features

12

Flat-8D LCC-6

2ST3260


2ST3360K complementary pair

Current capability of 0.8A (DC) and 4A (peak) and collector-emitter voltage of 60V.

Matched in output current gain.

Linear gain up to 0.8A (typ 300 for NPN and 250 for PNP).

Transition frequency of 160Mhz for application up to 200khz.

JANSR qualification

in Q2 2016

(MIL-PRF-19500/773)

13


Flat-8D

1

Pre and

post-radiation

NPN PNP

25 MAy 2010 14

2ST3360K – Pre & Post Radiation switching times

Resistive load test conditions: Vcc = 10V; Ibon = Iboff, hFE = 10

NPN PNP

14


2ST3360K in Power MOSFET driving

Green input square wave signal (5V/div)

Blue gate-source voltage (5V/div)

Magenta output current (1A/div)

Time axis 200nsec/div

T1 = 2ST3360K

T2 = STRH100N10

Vcc

Vgnd

Vout

T1

T2

15

Thanks to the high speed performance, hFE and power capability, the 2ST3360K

is able to switch in 40 nsec. high gate charge Power MOSFET (tested up to 180nC)


2ST3260 complementary pair

Current capability of 0.8A (DC) and 3A (peak) and collector-emitter voltage of 60V.

Matched in output current gain.

linear gain up to 0.8A (typ 300 for NPN and 250 for PNP).

Transition frequency of 160Mhz for application up to 200khz.

16


NPN PNP

LCC-6

High voltage Transistors

High voltage series regulator

High voltage stage for Electric propulsion

Application

hFE @ 1mA / Vce=5V

TID (krad)

The ST11600 (NPN) and 2ST21600 (PNP) are high voltage bipolar transistors

designed to operate in radiation environment

Rated of Bvceo > 600V and Ic of 0.5A

TO-39 / SMD.5

Excellent linearity and fast switching characteristics.

100 krad post-radiation low drift current gain at low collector current.

2ST11600

17


18

Power MOS-FET

Part number

Typ

e

BVDSS

[V] Id (A) (25 ºC)

RDS [W] max

@ 12V / Id (A) Qg Package T.I.D.

ESCC

QPL

STRH100N10

N-ch

100 48 0.035 24 135 TO-254AA

50krad

5205/021

STRH8N10 8 0.3 4 22 SMD.5 5205/023

STRH100N6 60

40 0.0135 40 135 TO-254AA 5205/022

STRH40N6 30 0.045 15 43 SMD.5 5205/024

STRH40P10 P-ch 100

34 0.075 17 162 TO-254AA

100krad

5205/025

STRH12P10 12 0.3 12 40 TO-257AA 5205/029

ITAR Free

Low Qg

SEB ruggedness

Parts approved by: BSS, ISRO, DSO, CASC and Neosat platform


P-channel Power MOS-FET

STRH40P10 & STRH12P10, 100V, 100Krad, SEB immunity to heavy ions for current limiter switch and linear post regulation applications. ID 34A Rdson 60mΩ, Qg 162nC TO-254AA ESCC QPL 5205/025 ID 12A Rdson 300mΩ Qg 40nC TO-257AA ESCC QPL 5205/029

STRH40P10

CURRENT LIMITER

STRH12P10

19


Rad-hard technology achieved 100 krad LDR and full RBSOA

Products development in 2016.

20

Power MOS-FET development program


Product Plan

21

Part number BVdss Id 25

deg C Rdson max @ 10V Qg Package

STRHMF18N20 200V 18A 110mΩ @ 12A 50 SMD.5 / TO-257AA

STRHMF50N20 200V 50A 50mΩ @ 30A 200 TO-254AA / SMD2








N-channel

Technology and products development in Italy

ITAR free

ESCC qualification plan


600V 1000V 1200V

Rated Voltage 1kW

5kW

10 kW

30 kW

50 kW

100 kW

350

KW

Pw

NETCOM, SERVER, NOTEBOOK

POWER SUPPLY HOME APPLIANCE

HEV / EV

PHOTOVOLTAIC

HEV / EV

PHOTOVOLTAIC INDUSTRIAL DRIVES POWER Supply & UPS HI-REL / HI-TEMP

RAIL TRACTION

SMART POWER GRID

WIND MILLS

SiC & GaN Application Map

GaN

SiC


SCT30N120: ST’s First SiC Power MOSFET

• SCT30N120 - SiC Power MOSFET, 45A, 1200V, 80mΩ

• Key parameters:

• VBR > 1200V

• In = 45A

• Ron(typ.) @ 125°C = 85mΩ

• Qg(typ.) < 105nC

• Gate driving voltage = 20V

• HiP247™ package → Tjmax = 200°C

• Key features:

• Very tight variation of on-resistance vs. temperature

• Slight variation of switching losses vs. temperature

• Very high operating temperature capability (200°C)

• Very fast and robust intrinsic body diode

• Low capacitance

• Easy to drive

• Schedule:

• Full Production

SCT30N120

23


0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

25 50 75 100 125 150 175 200

Normalized Rdson vs Tj

ST Comp A Comp B

SCT3N120 vs. Competition

On-resistance Variation vs. Temperature

°C

24


STM SiC MOSFET shows lowest Ron (< 30%) at high temperatures

25

Prototype and characterization of Rad-hard SiC MOS structures

Purpose of the project is the characterization of elementary SiC structures ( capacitors,

schottky diodes P-N junctions, hor. MOSFET) using available technology.

The project represents an enabling step toward the development of rad-hard High voltage

SiC Power MOSFET for range of voltage of 600 Volt and above.

Activity started in Q4 2015, duration 18 months

Integrated vacuum triode using silicon VLSI

Vertical profile of 3 elementary cells

I-V prototype characteristics of triode

cell matrix connected in diode configuration``

Features:

Radiation immunity by design (to be verified)

Thermomechanical robustness

2V threshold

STMicroelectronics Catania - programs with agency


26

CONCLUSION

STMicroelectronics Italy, Catania has a long history in Power Transistors design and

manufacturing including MOS-FET, IGBT, Bipolar.

Rad-Hard design knowledge acquired in past years has achieved a sufficient expertise

in Rad-Hard technique and technology development.

Almost all consolidated Power technologies have been assessed in radiation environment

and part of them selected for Space.

To reduce time for development, validation and qualification, the target-spec should be

defined with contribution of final users:

Electrical

Radiation test (TIS, SEE, SEB,…)

Qualification type (agency, according to, COTS+, ….)

Open to support application requirement and specific parameters definition.

Aerospace on the WEB 27

www.st.com/web/en/catalog/sense_power/FM137/SC1307

27


Thank you

contact: [email protected]

STMicroelectronics

Stradale Primosole 50

95121 – Catania, Italy

mailto:[email protected]

ST Space Offer

Chira Vinci

AeroSpace EMEA Marketing Manager

Analog and Power products

ASI Workshop - Jan 20th, 2016

ST offer in Space 30

WIDE PANEL OF TECHNOLOGIES

Including Rad-Hard and Rad-Capable

Over 35 years experience in AeroSpace

components

Only semiconductor company ESA and DLA

qualified

Broad fast expanding portfolio & technology :

Discrete – Logic & Interface – Analog –

Power – ASIC

Space Agency Qualified

FULLY OWNED SUPPLY CHAIN

EUROPEAN SUPPLIER

STRONG PRESENCE IN FRANCE / ITALY

Space Radiation Hardened

ASIC & Technology services

Broad range of technologies

65 nm rad-hard design platform

28nm FDSOI

Access to ST Rad-capable technologies

CMOS image sensor technology

RF

Technology & Design Platforms

A Complete Offering for Aerospace 31

High performance voltage reference,

comparator, Op Amp, ADC

Analog

Logic

CMOS4000 : 100 krad

HCMOS & HCTMOS : 50 krad

AC & ACT MOS : 300 krad

Power Management

Voltage regulator

PWM controllers

Gate drivers

Power MOSFET

Cost effective rad-hard series

Bipolar Transistors

ESCC 100 krad LDR series

New JANSR+ with LDR and

VLDR test results

Interfaces

LVDS fail safe series

16 bit bus interfaces, with LVTH &

level shifters

Jedec D5 compatible series

Power series up to 600 V / 40 A

Schottky Diodes & Rectifiers

Broad & fast expanding product & technology range for radiation hardness

LVDS Series 32

SMD : 5962-98651

SMD : 5962-98652

RHFLVDSR2D2 Transceiver

SMD : 5962-06202

RHFLVDS2281 Dual 4x4 Switch

SMD : 5962-14234

RHFLVDS32A Receiver

Flat-18

Flat-64

RHFLVDS31A Driver

Flat-16

EM : Now

QML : Now

Flat-16

EM : Now

QML : Now

EM : Now

QML : Now

EM : Now

QML : Now

300 krad

QML-V

LVDS Serie Features 33

• 400 Mbps (200MHz)

• ANSI TIA/EIA-644 compliant

• Vcc : 3.3V Typ - 4.8 Volt AMR

• Cold Spare all pins

• Fail-safe

• Large Common Mode : - 4V to +5V

• State-of-the-art skew : • Channel-to-channel : 0.25 ns

• Chip-to-chip : 0.7 ns

• Low power consumption : 55 mW

• Disable pin - High impedance

• 8KV ESD HBM on LVDS I/Os

• 2kV HBM on other I/Os

• CMOS 0.13 µm (HCMOS9A)

Key Features

• 150 krad : No drift up to 150 krad • Test on-going

• SEL free • @ 67 MeV.cm2/mg @ 125°C – 0° Tilt

• @ 134 MeV.cm2/mg @ 125°C – 60° Tilt

• Driver : • SET free @ 67 MeV.cm2/mg @ 25°C

• Cross section 4.10-7 cm2 @ 25°C

• Receiver : • SET free @ 32 MeV.cm2/mg @ 25°C

• Cross section 4.10-7 cm2 @ 25°C

• SEU-free by design

Radiation Hardness

300 krad

QML-V

LVDS Cost Effective Serie 5 also available (EM, FM)

RHF1009 & RHF100 Voltage References Adjustable 2.5 to 5.5 Volt / Fixed 1.2 Volt

35

Ik

K

A

Fixed

Ik

K

A

Adjus.

+V

C R2

R3

Vref

R1

EM : Now

QML : Now

• Vout = 2.5 to 5.5 & 1.20V fixed

• Ik = 12 mA max / 60µA min

• TempCo • RHF1009A : 30 ppm/°C max

• RHF100 : 15 ppm/°C max

• Accuracy= 0.10% / 0.15% min

• Macro models : Now

• BiCMOS 0.25 µm (HF7CMOS)

• TID : 300 krad (Si) – No Vout drift

• ELDRS free @ 300 krad

• SEL free @ 120 MeV.cm2/mg – No Vout drift

• SET cross section < 3 10-4 cm2

• Undershoot : Configuration dependent

• Report available upon request

Flat-10

EVAL-RHF100

EVAL-RHF1009A

Key Features

Radiation Hardness

RHFL6000 ST New Generation Voltage Regulator

36

• Vin : 2.5 to 12 Volt

• Vout : 1.2 Volt min

• Iout : 2A max

• Low Drop : 0.3 V typ @ 0.4A

• Full set of Protection • Adjustable over current

• Overload monitoring & signaling

• Over temperature

• Accessible control loop

• Inhibit Pin : 35 µA max shutdown

• HF2CMOSRH : Same as RHFL4913

• 300 krad ELDRS free

• SEL free @120 MeV.cm2/mg @125 °C

• SET < 3% up to 12 Volt / 300 mA & < 3.3% up to

4.0 V / @ 1 A

Flat-16

With connected lead

EM : Now

QML : Jan 2016

Key Features

Radiation Hardness

300 krad

RH-PM4424 Rad-Hard Low Side MOSFET Drivers 37

• 8 / 9 A sink / source capability

• Vcc : 4.5V to 18V

• Power dissipation: < 1.5W @ 70”C

• Under Voltage Lock-Out

• Separate Power & Signal Ground

• Fast rise & fall : 30 ns typ @ CL=4.7nF

• In-out delay time: 110ns typ @ CL =10nF • +/- 5ns Matching delay

• Vol = 20 mV @ Iout = 1 mA

• Low consumption: 1.8mA max

• -55 to +150 °C (Recommended : 125°C)

• 300 krad – ELDRS free at 100 krad

• SEL free at 60 Mev.cm2/mg @ 125°C – Cross

section 10-7 cm2

• SET cross section : 2.10-6 cm2 @ 25°C

• Report available upon request

EM : Now

QML : 1Q16

Flat-10 and Flat-16P

BCD6 SOI

Key Features

Radiation Hardness

300 krad

Developments & Roadmap

Samples within 6 Month

Rad-Hard : New developments on

going • Interfaces

• LVDS : Serializer & Deserialiser 1.575 Gsps

• Analog :

• Clock Buffer

• Differential Opamp for CCD Sensor

• Low Power 5.5 V Rail to Rail Opamp

• Power :

• Power Diodes

• Bipolar Transistors : Fast & High Voltage

• Gate Driver Family Extension

• Configurable Current Limiter

• Point of Load

• PWM Controller

• High + Low Gate Driver

40

LVDS217A & LVDS218A Serializer & Deserializer

41

Features :

• LVDS Serializer and Deserializer

• 3 x LVDS to 21 x CMOS

• 21 x CMOS to 3 x LVDS

• 75MHz Clock

• 1.575 Gsps equivalent data-rate

• HCMOS9A

Rad-Hard :

• 300 krad (Si) elrds free

• SEL free @ 110 MeV.cm²/mg @ 125°C

• SET minimized by Design & Layout

Status

• Cut 1.0 Characterization completed

Flat-48

EM : 1Q16

QML : 2Q16

Target Specifications :

• Vcc : 3.0 to 12 Volt

• Vout : 0.8V min

• Iout : 7A max : Single

• 14A max : Current Sharing 180° out of Phase

• Efficiency : up to 95%

• Fswitch : 100 Khz to 1 MHz

• Configurable Dual Threshold Iout limitation with HICCUP

• PCM Based Fast Load Transient & Loop Compensation

• Fully Configurable Soft Start

• Power Good Flag, Non-Latched Overvoltage Protection

42 Rad-Hard Point of Load

Flat-28

• Temperature Protection

• Latched on Repetitive Events

• Integrated Boot Diode

• Loop compensation access for easy

stabilization of all loads

• easy stabilization of all Loads

Radiation Targets

• 100 krad ELDRS free

• SEE free at 60 MeV

• SET Characterization

1st Silicon out

New developments in Roadmap

• Interfaces

• CAN PHY Interface : Roadmap

• Analog

• Clock Buffers : Roadmap

• Analog Multiplexer : R&D

• Industry Standard Quad Comparator : R&D

• Industry Standard General Purpose Opamp : R&D

• Multi Channel ADC : Roadmap

• Power R&D activities

• Next Generation Power MOSFET

• GaN Power Diodes

• …

43

44

1

9/

0

1/

2

0

1

6

Presentation Title

Thank you

ST portfolio for Aerospace

1Q16 Status 45

Discrete

devices

Logic and

interfaces

Analog and

sensors

Power

management

ADC

Op-amps

Bus drivers

Level shifters

ACMOS logic

HCMOS logic

CMOS4000

PWM

Controllers

Linear

regulator

Current

limiters

Gate Drivers

LVDS

Comparators

Voltage

references

Legend:

Hirel

50/100 krad

300 krad

DLA

ESCC

Development

Technology Provider

MOSFETs

Bipolar

transistors

Schottky

diodes

Bipolar

diodes

DAC New

New

New

New

New

New

Rad-hard Power Transistors for Space Application Transistor Division – Catania SpaceAutomotive...

Documents

Transcript of Rad-hard Power Transistors for Space Application Transistor Division – Catania SpaceAutomotive...