Excite T406
27
ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Excite T406 Acid Diffusion in CARs – Exposure latitude – Impact on Line Edge Roughness David Van Steenwinckel, Jeroen Lammers, Hans Kwinten (Philips Research Leuven) Peter Leunissen (IMEC)
description
Excite T406. Acid Diffusion in CARs Exposure latitude Impact on Line Edge Roughness David Van Steenwinckel, Jeroen Lammers, Hans Kwinten (Philips Research Leuven) Peter Leunissen (IMEC). Introduction. Impact of acid diffusion on chemical contrast. 200nm pitch. 100nm pitch. - PowerPoint PPT Presentation
Transcript of Excite T406
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Excite T406
Acid Diffusion in CARs
–Exposure latitude
– Impact on Line Edge Roughness
David Van Steenwinckel, Jeroen Lammers, Hans Kwinten (Philips Research Leuven)
Peter Leunissen (IMEC)
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Introduction
100nm pitch
Rela
tive #
dep
rote
cted
S
ites
(a.u
.)
0
1
2
3
4
5
6
-100 -50 0 50 100
Ld = 0nm
Ld = 30nm
Ld = 60nm
200nm pitch
Position (nm) Position (nm)
Impact of acid diffusion on chemical contrast
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
• Diffusion has major impact on max. EL
12
14
16
18
20
22
30 40 50 60 70 80 90 100
Ld (nm)
EL
(%
)
• Scaling with pitch• Ld = 68nm on 320nm pitch
translates to 0.21 Ld /pitch
Experiment:320nm pitch
NA=0.75Dipole =
0.89/0.6NILS = 2.3
Relation EL - Ld
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
12
14
16
18
20
22
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Ld/pitch
EL
(%
)
• EL scaling with NILS
Relation EL - Ld
• Scaling with pitch• Ld = 68nm on 320nm pitch
translates to 0.21 Ld /pitch
Experiment:320nm pitch
NA=0.75Dipole =
0.89/0.6NILS = 2.3
• Diffusion has major impact on max. EL
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Ld/pitch
EL
(%)
/ N
ILS
160nm HP
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
160nm HP
120nm HP
80nm HP
Theory
Relation EL - Ld
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Ld/pitch
EL
(%)
/ N
ILS
120nm HP
160nm HP
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
160nm HP
120nm HP
80nm HP
Theory
Relation EL - Ld
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Ld/pitch
EL
(%)
/ N
ILS
80nm HP
120nm HP
160nm HP
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
160nm HP
120nm HP
80nm HP
Theory
Relation EL - Ld
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Ld/pitch
EL
(%)
/ N
ILS ArF - 160nm HP
ArF - 120nm HP
ArF - 80nm HP
EUV - 50nm HP
Theory
Relation EL - Ld
EL / NILS 0.12
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
5
6
7
8
9
10
20 30 40 50 60 70 80 90 100
Ld (nm)
LE
R 3
(
nm
)
Factors affecting LER
Contrast
Shot Noise100nm 1:1 lines
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
5
6
7
8
9
10
20 30 40 50 60 70 80 90 100
Ld (nm)
LE
R 3
(
nm
)
Shot noise scaling:Poisson statistics
NNLER N 1~
100nm 1:1 lines
Shot Noise
N = number of acid molecules influencing deprotection statistics
Factors affecting LER
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
5
6
7
8
9
10
20 30 40 50 60 70 80 90 100
Ld (nm)
LE
R 3
(
nm
)N = number of acid molecules influencing deprotection statistics
100nm 1:1 lines
Shot noise scaling:Poisson statistics
NNLER N 1~ N
Photon densityExposure Dose
Volume affected by acid molecules
Shot Noise
Factors affecting LER
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
NNLER N 1~ 5
6
7
8
9
10
11
20 30 40 50 60 70 80 90 100
Ld (nm)
LE
Rco
rr_
do
se 3
(
nm
)
5
6
7
8
9
10
11
20 30 40 50 60 70 80 90 100
Ld (nm)
LE
Rco
rr_
do
se 3
(
nm
)
100nm 1:1 lines
N
Photon densityExposure Dose
Volume affected by acid molecules
Relation LER – Ld
Scaling LER - Ld
p
LMTFLLER ddiff
ddosecorr
2/3
_1
(Ld)3
Shot noise scaling:Poisson statistics
Shot Noise
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
5
6
7
8
9
10
11
20 30 40 50 60 70 80 90 100
Ld (nm)
LE
Rco
rr_
do
se 3
(
nm
)
100nm 1:1 lines
Optical
Chemical
Relation LER – Ld
Contrast
Shot Noise
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
5
6
7
8
9
10
11
20 30 40 50 60 70 80 90 100
Ld (nm)
LE
Rco
rr_
do
se 3
(
nm
)
Scaling LER - Ld
p
LMTFLLER ddiff
ddosecorr
2/3
_1
p
LMTFLLER ddiff
ddosecorr
2/3
_1
5
6
7
8
9
10
11
20 30 40 50 60 70 80 90 100
Ld (nm)
LE
Rco
rr_
do
se 3
(
nm
)
100nm 1:1 lines
Best LER
Relation LER – Ld
Contrast
Shot Noise
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Conclusions
Acid Diffusion Length LEREL
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Conclusions
Acid diffusion is an important resist process parameter to tune crucial lithographic process characteristics
– EL was altered by factor of 4
– LER changed by 40%
Scaling of EL and LER with diffusion length was successfully described by two validated formulas
For a given dose, EL and LER cannot be optimized simultaneously
– e.g. Optimum diffusion length for LER reduction is one third of the pitch,
EL then drops to 40% of best achievable
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Acknowledgments
P. Dirksen (Philips Research Leuven)
M. Ercken and N. Vandenbroeck (IMEC)
This work is sponsored through the Excite MEDEA+ T406 project, and the More Moore IST-1-507754-IP project.
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
0
3
6
9
12
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Ld/pitch
EL
(%)
/ N
ILS
80nm HP
120nm HP
160nm HP
Theory
EL / NILS = MTFdiffMTFdiff
Relation LER – Ld
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Introduction
Resolution
Dose
Line Edge RoughnessAcid Diffusion Length
Shot Noise StatisticsNumber of PixelsR. Brainard et al. Proc. SPIE, 5374, 74 (2004)
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Introduction
ResolutionChemical Contrast Exposure Latitude
Dose
Line Edge RoughnessAcid Diffusion Length
Shot Noise StatisticsNumber of PixelsR. Brainard et al. Proc. SPIE, 5374, 74 (2004)
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Introduction
Resolution Chemical ContrastExposure Latitude
Dose
Line Edge RoughnessAcid Diffusion Length
Shot Noise StatisticsNumber of PixelsR. Brainard et al. Proc. SPIE, 5374, 74 (2004)
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Introduction
Acid Diffusion Length LEREL
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Experimental Setup
• ArF resist: GAR8105G1 (FFEM)• Experimental matrix
• Acid diffusion lengths characterized using ENZ Theory• P. Dirksen et al., Proc SPIE, 5377, p150 (2004)• D. Van Steenwinckel et al., Proc. SPIE, 5753, paper 32 (2005)
115°C110°C 120°C
110°C
115°C
120°C
SBPEB
x x x
x x x
x x x
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
0
20
40
60
80
PEB 110C PEB 115C(std.)
PEB 120C
SB110C
SB115C
SB120C
Acid Diffusion Length (Ld)
Ld as characterized with ENZ
methodology
Observations:
– Large increase in Ld with PEB
temperature
– Small decrease in Ld with SB
temperatureAci
d D
iffusi
on L
eng
th (
nm
)
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Outline
Acid Diffusion Length LEREL
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Outline
Acid Diffusion Length LEREL
