EXCITE, the MEDEA+ Extreme UV Consortium for Imaging ...euvlsymposium.lbl.gov/pdf/2005/pres/06...

2005 EUVL Symposium San Diego, CA USA

EXCITE: Extreme UV Consortium for Imaging Technology page 1

EXCITE, the MEDEA+ Extreme UV Consortium for Imaging Technology

Peter Zandbergen*, Philips Research LeuvenWolf-Dieter Domke, InfineonPietro Cantú, STMicroelectronicsPhilippe Thony, STMicroelectronicsSergei Postnikov, FreescaleJean-Yves Robic, CEA-Leti



Presentation Outline

EXCITE and MEDEA+

Project Introduction

Project Highlights

Summary and Outlook

EXCITE and MEDEA+


Project Highlights

Summary and Outlook



A few words about MEDEA+

MEDEA+ is the industry-driven pan-European programme for advanced co-operative R&D in microelectronics to ensure Europe's technological and industrial competitiveness in this sector on a worldwide basis.

Project selection criteria amongst others include: – Innovation in basic and industrial research

– Competences of the partners

– Strengths of the consortium ("team effect")

Projects are targeting either “Applications (A)” or “Technology (T)”– Note: T406 EXCITE is part of the MEDEA+ EUVL Cluster

www.medeaplus.orgwww.medeaplus.org



EXCITE in the MEDEA+ EUVL Cluster

EXTATICAlpha Demo tool

EXTATICAlpha Demo tool

EXCITEEUV

ImagingTechnology

Users

EXCITEEUV

ImagingTechnology

Users

EUV SourceEUV Source

EXTUMASKMasks

EXTUMASKMasks

See Rob Hartman’s EU Regional Update tomorrow at 08:00AM for a more complete picture on European EUVL programs

See Rob Hartman’s EU Regional Update tomorrow at 08:00AM for a more complete picture on European EUVL programs



EUVL Critical Issues

Critical issues from EUVL Symposium Nov. 2004

1.Availability defect free masks2.Source components and collector optics lifetime3.Resist resolution, sensitivity and LER

Other: Reticle protection during storage, handling and useSource PowerProjector and illuminator optics quality and lifetime




EXCITE and MEDEA+


Project Highlights

Summary and Outlook

EXCITE and MEDEA+


Project Highlights

Summary and Outlook



EXCITEEXCITEExtreme UV Consortium for Imaging Technology Extreme UV Consortium for Imaging Technology –– MEDEA+ T406MEDEA+ T406




Countries involved:

• Belgium

• France

• Germany

• Italy

• Netherlands

• Switzerland

**

**

** **

* * **

*




The EXCITE project aims at developing Extreme Ultra-Violet (EUV) imaging capability for the 45nm technology node and beyond

Approach is to address bottlenecks related to EUV lithography imaging for implementing full-field patterning development

Three year program, ending Dec 31, 2005




T406 EXCITE T406 EXCITE EXCITE T406Metrology

EXCITE T406Metrology

EXCITE T406EUV Resist Technology


EXCITE T406EUV Mask Technology


EXCITE T406EUV Litho CellEXCITE T406

EUV Litho Cell

EXCITE T406Modelling


IEUVIResist TWG

IEUVIResist TWG

SEMATECHResist GroupSEMATECH

Resist Group




T406 EXCITE T406 EXCITE EXCITE T406Metrology

EXCITE T406Metrology





EXCITE T406EUV Litho CellEXCITE T406

EUV Litho Cell



IEUVIResist TWG

IEUVIResist TWG

SEMATECHResist GroupSEMATECH

Resist Group




EXCITE and MEDEA+


Project Highlights

Summary and Outlook

EXCITE and MEDEA+


Project Highlights

Summary and Outlook

Example 1: Resist Limits Triangle

Example 2: Tool vs. Resist Limits



30nm L/S

Highlights – Resist LimitsTwo key issues addressed

Trade-off Resolution, LER and Dose Tool or resist limits?

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose



30nm L/S

Tool or resist limits?


Trade-off Resolution, LER and Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose



Trade-off LER vs. sensitivity

0

3

6

9

12

15

18

0.1 0.2 0.3 0.4 0.5 0.6

(Dose-to-size )-1/2

LER

3σ

(nm

)

Shot noise statisticsImpact on LER

25mJ 11mJ 6mJ 4mJ

Throughput increase

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

LER increase



Importance of acid diffusion in CA Resist

Acid diffusion in Chemically Amplified Resists (CAR)

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Much edge smearing => LERLittle edge smearing => LER

Large volume => low doseSmall volume => high dose

Large smearing => resolutionLittle smearing => resolution

Lower contrast => Exp. Lat.Keep contrast => Exp. Lat.

HIGH diffusion lengthLOW diffusion length


















Relationship EL – Diffusion Length Ld

Measured contrast (EL) divided by NILS - to filter out differences in optical contrast - is used to quantify the impact of acid diffusion on contrast

Acid diffusion causes a significant drop in chemical contrast as acid diffusion length Ld increases relative to pitch

Data is well described by in-house developed theoretical curve. Note: no free parameters

⎥⎥⎦

⎤

⎢⎢⎣

⎡⎟⎟⎠

⎞⎜⎜⎝

⎛−−= 2

2

2

2 4exp1

4 pDt

DtpMTF f

fdiff

ππ

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

0

3

6

9

12

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

L d /pitch

EL(%

) / N

ILS

ArF - 160nm HPArF - 120nm HPArF - 80nm HPEUV - 50nm HPTheory



Relationship LER – Diffusion Length Ld

Two distinct regions visible:• Ld / pitch < 0.33: improvement of

deprotection statistics due to acid diffusion prevails, reducing overall line edge roughness

• Ld / pitch > 0.33: chemical contrast drop due to diffusion takes the lead and causes LER to increase

Scaling of LER with Ld:

⎟⎠⎞⎜

⎝⎛⎟

⎠⎞⎜

⎝⎛∝ p

LMTFLLER ddiff

ddosecorr

2/3

_1

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

2

4

6

8

10

12

0.1 0.2 0.3 0.4 0.5 0.6 0.7

L d / pitch

LER

corr

_dos

e (n

m)

EUV (E-N) - 50nm HP

EUV (A-D) - 50nm HP

ArF - 100nm HP



Resist Limits Triangle

Acid diffusion is an important resist process parameter to tune crucial lithographic process characteristics

– EL was altered by factor of 4

– LER changed by 40%

Scaling of EL and LER with diffusion length was successfully described by two validated formulas

For a given dose, EL and LER cannot be optimized simultaneously– e.g. Optimum diffusion length for LER reduction is one third of the

pitch, EL then drops to 40% of best achievable

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose





Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Shot Noise

Acid

Diff

usio

n

Acid Diffusion

Resolution LER

Dose 30nm L/S



50 nm half pitch 45 nm 40 nm

32.5 nm 30 nm

EUV-IL Results PMMA (non-CA Resist)Exposed at PSI Switzerland



EUV-IL Results PMMA (non-CA Resist)Exposed at PSI Switzerland

50 nm half pitch 45 nm 40 nm

35 nm 30 nm



30nm L/S EUV-IL imagingComparison PMMA vs. Chemically Amplified Resist

PMMANon-CA Resist

State of the artCA Resist

30nm L/S 30nm L/S



Higher Resolution L/S Patterns in PMMA25 nm 21.25 nm

17.5 nm 15 nm



Higher Resolution L/S Patterns in PMMA25 nm 21.25 nm

17.5 nm 15 nm

Good imaging down to 18nm L/S with non-CA Resist



Resolution Contact Holes

42nm 35nm35nm

PMMA CAR

• 35nm HP contact holes nicely image in PMMA• 42nm HP contact holes is at the limit of CAR capabilities;

smallest holes in CAR reported



Importance of PMMA imaging results

… is NOT in the fact that PMMA should be considered a serious resist candidate– Exposure doses are too high (well above 100 mJ/cm2)

– Serious concern about outgassing

… is in determining whether imaging systems or resists are limiting factor– L/S and contact hole results indicate CA Resists are limiting

Note: MET and PSI-IL data correlate well for resist screening



Importance of PMMA imaging results

… is NOT in the fact that PMMA should be considered a serious resist candidate– Exposure doses are too high (well above 100 mJ/cm2)

– Serious concern about outgassing

… is in determining whether imaging systems or resists are limiting factor– L/S and contact hole results indicate CA Resists are limiting

Note: MET and PSI-IL data correlate well for resist screening

Tuesday Nov. 8 at 08:40AM

“Microstepper vs. interference EUV lithography… “



Other project highlights and activities not presented here

Resist Outgassing

Resist Screening

Flare and CD control

CD, LER and Profile metrology

…

Other EXCITE related papers at this conference:– Nov. 8 at 08:00 AM: “EU Regional Update” (ASML)

– Nov. 8 at 08:40 AM: “Microstepper vs. Interference EUV litho…” (IMEC et al.)

– Poster 1-RE-02: “EUV Process Modeling” (Freescale et al.)




EXCITE and MEDEA+


Project Highlights

Summary and Outlook

EXCITE and MEDEA+


Project Highlights

Summary and Outlook



Understanding and optimization of resolution limits of Chemically Amplified Resists (Photospeed, LER and Resolution) will be key for implementation of EUVL at 32nm and beyond

Current CAR imaging is limited by the resists, not the tools

Understanding of safe levels of resist outgassing is needed for chemical platform selection

Flare is an important driver for process windows and LER

Dissemination of project outcome has supported driving critical issues– Active cooperation in international working groups like Sematech, I-TWG,

European resist workshop, …




Acknowledgments:

SEMATECH for the fruitful cooperation on Resist Technology

IEUVI TWG Resist for the global network to align issues

IST More Moore project partners for fruitful discussions

EXCITE Project Partners for their inspiration and transpiration

MEDEA+ and local governments for their support

Acknowledgments:

SEMATECH for the fruitful cooperation on Resist Technology

IEUVI TWG Resist for the global network to align issues

IST More Moore project partners for fruitful discussions

EXCITE Project Partners for their inspiration and transpiration

MEDEA+ and local governments for their support


EXCITE, the MEDEA+ Extreme UV Consortium for Imaging ...euvlsymposium.lbl.gov/pdf/2005/pres/06...

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