ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Introduction...
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Transcript of ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Introduction...
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Introduction ExCITe Resist
WP Leader: InfineonWolf-Dieter Domke
ExCITe/More Moore Meeting
May 12, 2005Athens, Greece
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
WP 1: EUV Resist Technology Introduction
Task 1.1 Preliminary Resist Materials Characterization (1Q03 – 2Q05)
– Bulk litho properties („open frame“)
– Outgassing in vacuum and under EUV radiation
– Ultra-Thin Resist thermal properties
– Correlation of LER with polymer properties and diffusion
Task 1.2 EUV Resist Systems for the ≤ 45nm Nodes (1Q04 – 4Q05)
– Printing capability
– Assessment of resolution limitations (e.g. LER )
– Optimize resist formulation and processing
– Identification of resist and process roadblocks for the 45nm node
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Koen van Ingen Schenau
Jean-Yves RobicKarl van Werden
Kurt Ronse Wolf-Dieter Domke *
Peter Zandbergen **
*) Work Package 1 Leader**) MEDEA+ T406 Project Leader
Italy: Carmelo Romeo
France: Daniel Henry
Enzo Di Fabrizio
Michele Bertolo
Harun Solak
WP 1: EUV Resist Technology Cooperation
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
2003 2004 2005Q1 Q2 Q3 Q4Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3
02Q4
Definition phase
Basic materials characterization Resist formulation & characterization
Open frame characterization
Patterning Characterization, Screening
Hardmask, process characterization
Definition phase
M1.1.1 M1.1.2
M1.1.5 M1.1.6
M1.2.1
M1.1.8M1.1.7
M1.2.2 M1.2.4
M1.2.6M1.2.5master milestones
we are here now
M1.2.3
WP 1: EUV Resist Technology Status and Results
report on resist and process limitations resist screening
status report
Resist & process roadblocks for 45nm
node identified
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
9 out of 12 milestones done.
Consolidated partnership within IEUVI, Sematech, International Conferences & Workshops – involved in specs & methodology discussions.
Resist Materials Characterization : open frame exposures finished, fundamentals for shot noise, diffusion and LER studied with diffused point-spread function methodology.
MET and Interference Exposures worldwide successfully started. Resolution is limited by the resists, no longer by the tools.
Workshops on Resist Limitations initiated
Status of EUV resist processing issues for 45nm node identified and reported.
EUV resist outgassing methodology developed; outgassing of some resist classes quantified – ongoing work in IEUVI.
9 out of 12 milestones done.
Consolidated partnership within IEUVI, Sematech, International Conferences & Workshops – involved in specs & methodology discussions.
Resist Materials Characterization : open frame exposures finished, fundamentals for shot noise, diffusion and LER studied with diffused point-spread function methodology.
MET and Interference Exposures worldwide successfully started. Resolution is limited by the resists, no longer by the tools.
Workshops on Resist Limitations initiated
Status of EUV resist processing issues for 45nm node identified and reported.
EUV resist outgassing methodology developed; outgassing of some resist classes quantified – ongoing work in IEUVI.
WP 1: EUV Resist Technology Highlights (as presented at Oberkochen Review)
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
PMMA (non-CA resist) imaging at PSI
Best resolution obtained with optical lithography so farBest resolution obtained with optical lithography so far
17.5nm L/S 35nm contacts15nm L/S
Resist Performance Screening by EUV Interference Lithography: Resolution no longer limited by tool, but by resist ( 3rd Int EUV Symp.; Miyazaki)
Resist Performance Screening by EUV Interference Lithography: Resolution no longer limited by tool, but by resist ( 3rd Int EUV Symp.; Miyazaki) 40nm in CA-resist40nm in CA-resist
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
WP 1: EUV Resist Technology ALS/MET evaluation ongoing
35nm L/S in MET-2D, left: dark field mask, right: bright field mask
ExCITe exposures at ALS/MET: resist screening, flare, & process experiments
Flare has a dramatic impact on LER
Flare has a dramatic impact on LER
50 nm L/S: 300nm DoF at E= 17.85mJ/cm2
F=-200nm -150 -100 -50 0 +50 +100
process window evaluation
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
0,00E+00
1,00E-09
2,00E-09
3,00E-09
4,00E-09
5,00E-09
6,00E-09
7,00E-09
8,00E-09
9,00E-09
1,00E-08
0 10 20 30 40 50 60 70 80 90 100
amu
a.u
.
WP 1: EUV Resist Technology Outgassing Evaluation
ESCAP (UV5)MS spectrum
Online MS and proofplate method installed at Leti; first EUV resist outgassing results available
Online MS and proofplate method installed at Leti; first EUV resist outgassing results available
Reference
1
2
0
10
20
30
40
50
60
70
80
Conc
entrat
ion (%
)
Analyzed region
C 1s
Si 2p
O 1s
Si 2p
Sticked bare Si
Exposed region : Ø=38 mm
Photo-Resist
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
Polymers with high tendency to chain scissioning show the most outgassing
acrylic model resists show more chain scissioning in EUV compared to even 157nm.
Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists.
ESCAP resist shows dose-dependent scissioning / crosslinking behavior
Only DUV resist platform fulfill ASMLs outgassing specs for -tool
Polymers with high tendency to chain scissioning show the most outgassing
acrylic model resists show more chain scissioning in EUV compared to even 157nm.
Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists.
ESCAP resist shows dose-dependent scissioning / crosslinking behavior
Only DUV resist platform fulfill ASMLs outgassing specs for -tool
WP 1: EUV Resist Technology Outgassing Evaluation
0
20
40
60
80
100
120
0 20 40 60 80
Mw (157)
Mw (EUV)
dose [mJ/cm2]
norm
aliz
edm
olec
ular
wei
ght
0
20
40
60
80
100
120
0 20 40 60 80
Mw (157)
Mw (EUV)
dose [mJ/cm2]
norm
aliz
edm
olec
ular
wei
ght
@ EUV @ 193nmESCAP 5 E+11 2 E+11PHOST 3 E+12 1 E+12POSS 1 E+13
COMA-Si 2 E+13ACR-MA 3 E+14 6 E+12
Quantitation of total outgassing [molecules/cm2 sec]
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
WP 1: EUV Resist Technology Line Edge Roughness & Diffusion
Method of diffused point-spread function developed and used for determination of resist diffusion limitations
Method of diffused point-spread function developed and used for determination of resist diffusion limitations
Sensor, Resist
Lens
Point Spread Function (PSF)
Reticle
0
10
20
30
40
50
60
SB110C SB115C SB120C
PEB 110CPEB 115C (std.)
PEB 120C
Diffusion Length (nm)
Diffusion lengths are correlated to LERDiffusion lengths are correlated to LER
ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting
Athens, 11/12. 5. 2005
WP 1: EUV Resist Technology Future Outlook (as presented at Oberkochen Review)
Resist Characterisation: BEL debugging is still ongoing (M1.2.1-2)
Open Frame Characterization is finished (M1.1.5 & M1.1.7); Emphasis of Patterning experiments is resist screening, flare impact and processing issues (bake, diffusion, LER, ..) (M1.2.3-5)
Resist & Process specs will be constantly updated during IEUVI Working Group Interactions (M1.2.3-5)
Resist Outgassing experiments will be continued by the ExCITe partners. Standardization of Outgassing protocols will be driven through interaction MEDEA / IEUVI / Sematech
European Workshop on Resist Limitations will be continued (MEDEA ExCITe / More Moore (organizing)) and will be used to drive international activities on:
– Understanding and Optimization of Photospeed, Line Edge Roughness and Shot Noise
– Understanding of the Resolution Limits of Chemically Amplified Resists
– Understanding, what is a safe level of Resist Outgassing?