Current Status of the EUVL Development at LASTI, of Hyogo
Transcript of Current Status of the EUVL Development at LASTI, of Hyogo
Current Status of the EUVL Development at CEL, LASTI,
University of Hyogo
Takeo WatanabeCenter for EUVL, University of Hyogo
EUVL
Center for EUVL,
Reflectometer (BL10)CSM (BL10)
NewSUBARU Synchrotron Radiation Facility
EUVM & CSM (BL3)
EUV Interference Lithography (BL9B)Outgas and Contamination (BL9C)
EUVL
Resist
Mask
EUV Interference Lithography
10‐5 Pa
Pattern is appeared
EUV
- 1st order0th order
0th order+ 1st order
±1st order
Resist/WaferT-Grating
Resist patternEUV light
Exposure tool
Clean roomClass 100
■The Interference fringes were created at the interference point of 1storder and ‐1st order diffracted lights.■ Replication pattern pitch of the resist pattern has a half pitch size of the diffraction grating.
hp 15 nm50 μm
150μm
hp 45 nm
hp 40 nm
hp 35 nm
hp 30 nm
hp 22.5 nm
hp 20 nm
hp 17.5 nm
hp 15 nm
Two window transmissiongrating
Four window transmission grating
hp 50 nmhp 35 nm
hp 40 nmhp 28 nm
hp 28 nmhp 15 nm
Resist replication results
BL‐7bWorld first analysis for chemical
reaction of EUV resist!!
Energy ResolutionE/ΔE=~3000
Resist chemical reaction study by SR absorption spectroscopy for high sensitivity and low LWR
OH
O
O
m n
OH
O
O
m n
+
+ e‐
S+
O2S CF2
CF2
CF2O2S
-N S+
O2S CF2
CF2
CF2O2S
-N S+
O2S CF2
CF2
CF2O2S
-NH+‐S‐ + +e‐ H+
EUV light ( hν )
EUV light ( hν ) S+
O2S CF2
CF2
CF2O2S
-N
Ionization reaction
Direct excitation reaction
Conventional reaction
Additional reaction
+by‐product
+
Why 4 times high sensitive in Imidate type
of PAG under EUV exposure??
H+ ‐F‐
H+ ‐N‐SO2
H+ ‐N‐SO2 ‐CF2
Resist chemical reaction study by SR absorption spectroscopy for high sensitivity and low LWR
Contamination evaluation tool using in-situ ellipsometry adapted to the 10.8-m-long undulator
QMS
Ellipsometry(Source)
Ellipsometry(Analyzer)
Control Valve
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
0 50
Fitti
ng
2
Thickn
ess (nm
)
Time (min)
Thickne…Kai^2Fittng 2
Phase-modulation-type spectroscopicellipsometer450 nm~1000 nm
On a witness sample 320 mW/cm2
in-band EUV
On a resist sample149 mW/cm2
Schwarzschild optics(Multilayer mirror, NA 0.3, 30X)
New SUBARU SRBeamLine 3
Load-lock chamber
Vibration isolator
front-end turning mirror(Multilayer mirror)
back-end turning mirror(Multilayer mirror)
(c) CCD camera
X-Y-Z sample stage
X-ray zooming tube(10~200X)
EUV Microscope (EUVM) for EUV mask inspectionSource: Bending magnetInspection: Bright fieldTime: 10~20 sMag.: 300~6000 XNA:0.3
Thank you for your attention !!