CM1000DUC-34SA Mega Power Dual IGBT 1000A 1700V · 2015. 3. 4. · P D (8 PLACES) L L H H H H H H M...

Mega Power Dual IGBT 1000 Amperes/1700 Volts

CM1000DUC-34SA

103/13 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

Outline Drawing and Circuit Diagram

Description:Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features:£ Low Drive Power£ Low VCE(sat)£ Discrete Super-Fast Recovery

Free-Wheel Diode£ Isolated Baseplate for Easy

Heatsinking£ RoHS Compliant

Applications:£ High Power DC Power Supply£ Large DC Motor Drives£ Utility Interface Inverters

Ordering Information:Example: Select the complete module number you desire from the table - i.e. CM1000DUC-34SA is a 1700V (VCES), 1000 Ampere Dual IGBTMOD Power Module.

Current Rating VCES Type Amperes Volts (x 50)

CM 1000 34

Dimensions Inches Millimeters

M 0.075±0.008 1.9±0.2

N 0.47 12.0

P 0.26 6.5

R M6 Metric M6

S 0.08 2.0

T 0.99 25.1

U 0.62 15.7

V 0.71 18.0

W 0.75 19.0

X 0.43 11.0

Y 0.83 21.0

Z 0.41 10.5

AA 0.22 5.5

Dimensions Inches Millimeters

A 5.91 150.0

B 5.10 129.5

C 1.67±0.01 42.5±0.25

D 5.41±0.01 137.5±0.25

E 6.54 166.0

F 2.91±0.01 74.0±0.25

G 1.65 42.0

H 0.55 14.0

J 1.50±0.01 38.0±0.25

K 0.16 4.0

L 1.36 +0.04/-0.02 34.6 +1.0/-0.5

Housing Type (J.S.T. MFG. CO. LTD) BB = VHR-2N CC = VHR-5N

C2E1

E2

G2

E2 (Es2)

E1 (Es1)

C1 (Cs1)C2 (Cs2)

G1

Tr2

Di2 Di1

C1

Tr1

Tolerance Otherwise Specified (mm)Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2

ADP

(8 PLACES) L

LMH H HHH H

KG

U H H

E

F

F

E2

C2

C2E1

C1

G2 E1

E2 G1

C1

V

BB

CC

BC

J

J

G GR (9 PLACES)

LABEL

U

W

SN

X

YZ

AA

T

CM1000DUC-34SAMega Power Dual IGBT1000 Amperes/1700 Volts

2


03/13 Rev. 3

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts

Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts

Collector Current (DC, TC = 125°C)*2,*4 IC 1000 Amperes

Collector Current (Pulse, Repetitive)*3 ICRM 2000 Amperes

Total Power Dissipation (TC = 25°C)*2,*4 Ptot 10,000 Watts

Emitter Current*2 IE*1 1000 Amperes

Emitter Current (Pulse, Repetitive)*3 IERM*1 2000 Amperes

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Visol 4000 Volts

Maximum Junction Temperature Tj(max) 175 °C

Maximum Case Temperature TC (max) 125 °C

Operating Junction Temperature Tj(op) -40 to +150 °C

Storage Temperature Tstg -40 to +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.

51.7

0

Tr1, Tr2: IGBT, Di1, Di2: FWDiEach mark points to the center position of each chip.

0 38.2

51.0

98.9

111.

8

Tr2

77.8

64.7

93.2

119.3

106.2

Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

23.2

36.3

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

10.2 Tr2 Di2 Tr1Di1

LABEL SIDE


3


03/13 Rev. 3

Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA

Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 10 µA

Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 5.4 6.0 6.6 Volts

Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts

(Terminal = Chip) IC = 1000A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts

IC = 1000A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts

Input Capacitance Cies — — 260 nF

Output Capacitance Coes VCE = 10V, VGE = 0V — — 27 nF

Reverse Transfer Capacitance Cres — — 5 nF

Gate Charge QG VCC = 1000V, IC = 1000A, VGE = 15V — 4700 — nC

Turn-on Delay Time td(on) — — 900 ns

Rise Time tr VCC = 1000V, IC = 1000A, VGE = ±15V, — — 350 ns

Turn-off Delay Time td(off) RG = 2.0Ω, Inductive Load — — 1250 ns

Fall Time tf — — 400 ns

Emitter-Collector Voltage VEC*1 IE = 1000A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts

(Terminal = Chip) IE = 1000A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts

IE = 1000A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts

Reverse Recovery Time trr*1 VCC = 1000V, IE = 900A, VGE = ±15V — — 400 ns

Reverse Recovery Charge Qrr*1 RG = 2.0Ω, Inductive Load — 270 — µC

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 1000A, — 239 — mJ

Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 2.0Ω, Tj = 150°C, — 269 — mJ

Reverse Recovery Energy per Pulse Err*1 Inductive Load — 130 — mJ

Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — 0.286 — mΩ

Per Switch,TC = 25°C*4

Internal Gate Resistance rg Per Switch — 0.56 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

51.7

0


0 38.2

51.0

98.9

111.

8

Tr2

77.8

64.7

93.2

119.3

106.2

Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

23.2

36.3

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

10.2 Tr2 Di2 Tr1Di1

LABEL SIDE


4


03/13 Rev. 3

Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per IGBT — — 15 K/kW

Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Diode — — 24 K/kW

Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 6 — K/kW

Case to Heatsink (Per 1 Module)*6

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 22 27 31 in-lb

Ms Mounting to Heatsink, M6 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 24 — — mm

Terminal to Baseplate 33 — — mm

Clearance da Terminal to Terminal 14 — — mm

Terminal to Baseplate 33 — — mm

Weight m — 1450 — Grams

Flatness of Baseplate ec On Centerline X, Y*7 -50 — +100 µm

Recommended Operating Conditons, Ta = 25°C

(DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts

Gate-Emitter Drive Voltage VGE(on) Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts

External Gate Resistance RG Per Switch 2.0 — 6.0 Ω

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

X

BOTTOM

– CONCAVE

+ CONVEX

– C

ON

CA

VE

+ C

ON

VE

X

BOTTOM

BOTTOM

LABEL SIDE

Y1

39 mm 39 mm

Y2

51.7

0


0 38.2

51.0

98.9

111.

8

Tr2

77.8

64.7

93.2

119.3

106.2

Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

23.2

36.3

Tr2 Di2 Tr1Di1

Tr2 Di2 Tr1Di1

10.2 Tr2 Di2 Tr1Di1

LABEL SIDE


5


03/13 Rev. 3

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CA

PA

CIT

AN

CE

, Cie

s, C

oes,

Cre

s, (

nF)

CAPACITANCE VS. VCE(TYPICAL)

100 102

103

102

101

10-1

100

1010 21 53 4 6101

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

FREE-WHEEL DIODEFORWARD CHARACTERISTICS

(CHIP - TYPICAL)

102

103

104

EM

ITT

ER

CU

RR

EN

T, I

E, (

AM

PE

RE

S)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

CO

LLE

CT

OR

-EM

ITT

ER

SA

TU

RA

TIO

N V

OLT

AG

E, V

CE

(sat

), (

VO

LTS

)

COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS

(CHIP - TYPICAL)

10

6 8 10 1412 16 18 20

8

6

4

2

0

Tj = 25°C

VGE = 0VTj = 25°C

Cies

Coes

Cres

IC = 2000A

IC = 1000A

IC = 600A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CO

LLE

CT

OR

CU

RR

EN

T, I

C, (

AM

PE

RE

S)

OUTPUT CHARACTERISTICS(CHIP - TYPICAL)

0 2 4 6 8 100

VGE = 20V

10

11

1213.515

9

Tj = 25°C2000

500

1000

1500

COLLECTOR CURRENT, IC, (AMPERES)

CO

LLE

CT

OR

-EM

ITT

ER

SA

TU

RA

TIO

N V

OLT

AG

E, V

CE

(sat

), (V

OLT

S)

COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS

(CHIP - TYPICAL)

4.5

4.0

2.5

3.0

3.5

0

2.0

1.5

0.5

1.0

020001500500 1000

VGE = 15VTj = 25°CTj = 125°CTj = 150°C

10-1


104

101 102

103

100

101

102

SW

ITC

HIN

G T

IME

, (ns

)

HALF-BRIDGESWITCHING CHARACTERISTICS

(TYPICAL)

td(off)

td(on)

tr

VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 125°CInductive Load

tf

103


104

101 102

103

100

101

102

SW

ITC

HIN

G T

IME

, (ns

)

HALF-BRIDGESWITCHING CHARACTERISTICS

(TYPICAL)

td(off)

td(on)

tr


tf

103

EXTERNAL GATE RESISTANCE, RG, (Ω)

104

10010-1101

SW

ITC

HIN

G T

IME

, (ns

)

SWITCHING TIME VS.GATE RESISTANCE

(TYPICAL)

td(on)

tr

VCC = 1000VVGE = ±15VIC = 1000ATj = 125°CInductive Load

tf

101

EXTERNAL GATE RESISTANCE, RG, (Ω)

104

103

103

100

102

102

SW

ITC

HIN

G T

IME

, (ns

)

SWITCHING TIME VS.GATE RESISTANCE

(TYPICAL)

101

VGE = 15VTj = 25°CTj = 125°CTj = 150°C

td(on)

tr

VCC = 1000VVGE = ±15VIC = 1000ATj = 150°CInductive Load

tf

td(off)td(off)


6


03/13 Rev. 3

TIME, (s)

TRANSIENT THERMALIMPEDANCE CHARACTERISTICS

(MAXIMUM)

100

10-5 10-4 10-3

10-1

10-2

10-3

10-3 10-2 10-1 100 101

10-1

10-2

10-3

Zth

= R

th •

(N

OR

MA

LIZ

ED

VA

LUE

)

Single PulseTC = 25°CPer Unit Base = Rth(j-c) = 15 K/kW (IGBT)Rth(j-c) = 24 K/kW (FWDi)

NO

RM

ALI

ZE

D T

RA

NS

IEN

T T

HE

RM

AL

IMP

ED

AN

CE

, Zth

(j-c'

)

GATE CHARGE, QG, (nC)

GA

TE

-EM

ITT

ER

VO

LTA

GE

, VG

E, (

VO

LTS

)

GATE CHARGE VS. VGE

20

0

15

10

5

060002000 80004000

IC = 1000AVCC = 1000VTj = 25°C

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY CHARACTERISTICS(TYPICAL)

103

101 102101

103


Irrtrr

RE

VE

RS

E R

EC

OV

ER

Y, I

rr (

A),

t rr (

ns)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY CHARACTERISTICS(TYPICAL)

103

101 102101

102 102

103


Irrtrr

RE

VE

RS

E R

EC

OV

ER

Y, I

rr (

A),

t rr (

ns)

GATE RESISTANCE, RG, (Ω)

SW

ITC

HIN

G E

NE

RG

Y, E

on, E

off,

(mJ)

RE

VE

RS

E R

EC

IVE

RY

EN

ER

GY

, Err, (

mJ)

103

102

10-1 100 101101

HALF-BRIDGE SWITCHINGCHARACTERISTICS (TYPICAL)

VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 125°C

VCC = 1000VVGE = ±15VIC/IE = 1000ATj = 125°C

COLLECTOR CURRENT, IC, (AMPERES)EMITTER CURRENT, IE, (AMPERES)

SW

ITC

HIN

G E

NE

RG

Y, E

on, E

off,

(mJ)

RE

VE

RS

E R

EC

IVE

RY

EN

ER

GY

, Err, (

mJ)

103

102

101


EonEoffErr

GATE RESISTANCE, RG, (Ω)

SW

ITC

HIN

G E

NE

RG

Y, E

on, E

off,

(mJ)

RE

VE

RS

E R

EC

IVE

RY

EN

ER

GY

, Err, (

mJ)

103

102

10-1 100 101101

VCC = 1000VVGE = ±15VIC/IE = 1000ATj = 150°C

EonEoffErr

EonEoffErr

101 102 103

VCC = 1000VVGE = ±15VRG = 2.0ΩTj = 150°C

COLLECTOR CURRENT, IC, (AMPERES)EMITTER CURRENT, IE, (AMPERES)

SW

ITC

HIN

G E

NE

RG

Y, E

on, E

off,

(mJ)

RE

VE

RS

E R

EC

IVE

RY

EN

ER

GY

, Err, (

mJ)

103

102

101


EonEoffErr

101 102 103

CM1000DUC-34SA Mega Power Dual IGBT 1000A 1700V · 2015. 3. 4. · P D (8 PLACES) L L H H H H H H M...

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