CT and IGCT Norbert J. Pelc, Sc.D. Department of Radiology Stanford University.
Abb Flyer Igct 2014 Web
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ABB Semiconductors’ IGCTs are now used in a multitude of applications due to their versatility, efficiency and cost- effectiveness. With their low on-state voltage, they achieve the lowest running costs by reaching inverter efficiencies of 99.6 percent and more. The IGCT is a gate-controlled turn-off switch which turns off like a transistor but conducts like a thyristor with the lowest conduction losses. Figure 1 shows turn-off at 3000 A. GCTs are the only high power semiconductors to be supplied already integrated into their gate units. The user thus only needs to connect the device to a 28 – 40 V power supply and an optical fibre for on/off control. Because of the topology in which it is used, the IGCT produces negligible turn-on losses. This, together with its low conduction losses, enables operation at higher frequencies than formerly obtained by high power semiconductors. Figure 2 illustrates the basic IGCT VSI topology. It can be seen that diode commutation is controlled by the inductance L. The free-wheel circuit of figure 2 minimizes the turn-on energy in the semiconductor by storing it in L. The inductance is the most logical fault limitation technique in the event of cata- strophic failure since, as opposed to resistors and fuses, it has the benefit of “already being there”. The press-pack construc- tion of the IGCT, combined with the inductance, makes the system resistant to explosion, even when the device’s surge rating is exceeded. Turn-off dv/dt is also not gate-controlled, but programmed at the device manufacturing stage by anode design and lifetime engineering. The absence of dv/dt and di/dt control functio- nality simplifies the gate-unit design and allows a high degree of standardisation. Some sixty publications exist on the use of IGCTs in many applications. These can be downloaded from the ABB Website www.abb.com/semiconductors. Table 2 summarises the essential documents relating to the application of IGCTs. As can be seen in table 1, IGCTs are available as reverse conducting (RC) and asymmetric devices. The low losses allow hard-switched operating frequencies of up to 600 Hz for 6.5 kV devices and 1 kHz for 4.5 kV devices in the steady state and over 5 kHz in burst mode. Power and productivity for a better world ™ Fig. 1 IGCT turn-off exhibits same waveform and losses (E off ) as transistor Anode voltage V d Gate voltage V g Anode current I a 15 20 25 30 35 Time (μs) V g (V) 4 3 2 1 0 -10 -20 V d (kV) I a (kA) V dm I tgq 4 3 2 1 0 starts to block Fig. 2 Basic IGCT inverter circuit V DC L S D clamp C clamp R L S 1 S 3 S 5 S 2 S 4 S 6 IGCT – integrated gate-commutated thyristors
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Transcript of Abb Flyer Igct 2014 Web
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ABB Semiconductors IGCTs are nowused in a multitude of applications dueto their versatility, efficiency and cost-effectiveness. With their low on-statevoltage, they achieve the lowest runningcosts by reaching inverter efficienciesof 99.6 percent and more.
The IGCT is a gate-controlled turn-off switch which turns offlike a transistor but conducts like a thyristor with the lowestconduction losses. Figure 1 shows turn-off at 3000 A.GCTs are the only high power semiconductors to be suppliedalready integrated into their gate units. The user thus onlyneeds to connect the device to a 28 40 V power supply andan optical fibre for on/off control. Because of the topology inwhich it is used, the IGCT produces negligible turn-on losses.This, together with its low conduction losses, enablesoperation at higher frequencies than formerly obtained byhigh power semiconductors.
Figure 2 illustrates the basic IGCT VSI topology. It can be seenthat diode commutation is controlled by the inductance L. Thefree-wheel circuit of figure 2 minimizes the turn-on energy inthe semiconductor by storing it in L. The inductance is themost logical fault limitation technique in the event of cata-strophic failure since, as opposed to resistors and fuses, it hasthe benefit of already being there. The press-pack construc-tion of the IGCT, combined with the inductance, makes thesystem resistant to explosion, even when the devices surgerating is exceeded.
Turn-off dv/dt is also not gate-controlled, but programmed atthe device manufacturing stage by anode design and lifetimeengineering. The absence of dv/dt and di/dt control functio-nality simplifies the gate-unit design and allows a high degreeof standardisation. Some sixty publications exist on the use ofIGCTs in many applications. These can be downloaded fromthe ABB Website www.abb.com/semiconductors. Table 2summarises the essential documents relating to the applicationof IGCTs.
As can be seen in table 1, IGCTs are available as reverseconducting (RC) and asymmetric devices. The low losses allowhard-switched operating frequencies of up to 600 Hz for 6.5kV devices and 1 kHz for 4.5 kV devices in the steady stateand over 5 kHz in burst mode.
Power and productivityfor a better world
Fig. 1 IGCT turn-off exhibits same waveform and losses (Eoff) as transistor
Anode voltage Vd
Gate voltage Vg
Anode current I a
15 20 25 30 35 Time (s)Vg (V)
4
3
2
1
0
-10
-20
Vd (kV) I a (kA)
Vdm
I tgq
4
3
2
1
0
starts to blockFig. 2 Basic IGCT inverter circuit
VDC
L SDclamp
Cclamp
RL
S 1 S 3 S 5
S 2 S 4 S 6
IGCT integrated gate-commutatedthyristors
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ApplicationsThe integrated gate-commutated thyristor is the powerswitching device of choice for demanding high-power appli-cations such as:- MVD (Medium Voltage Drives)- Marine drives- Co-generation- Wind power converters- STATCOMs- DVRs (Dynamic Voltage Restorers)- BESS (Battery Energy Storage Systems)- SSB (Solid State Breakers)- DC traction line boosters- Traction power compensators- Interties
OutlookThe expansion of power electronics into the new fields ofenergy management, renewable energy sources and co-generation is driving semiconductor requirements towardshigher frequency, higher voltage and higher efficiency whileincreasing demands for reliability and lower costs.
The IGCT is capable of still higher currents, voltages andfrequencies without series or parallel connection and the firstproducts are introduced as High Power Technology devices,see table 1. This latest family of IGCTs exhibit up to 30 %higher turn-off capability than standard devices.
Currently in development are technologies to increase therated temperature for a number of devices and to increasethe current rating with larger silicon diameters.
Within 10 years of its introduction, the IGCT has establisheditself as the power device of choice for high power at highvoltage by meeting the demands of a growing power electronicmarket. Single inverters of over 15 MVA can now be realisedwithout series or parallel connection achieving the highestinverter power densities in the industry.
Applying IGCT gate units
Applying IGCTs
Recommendations regarding mechanical clamping of press-pack high power semiconductors
Failure rates of IGCTs due to cosmic rays
Field measurements on high power press-pack semiconductors
Voltage ratings of high power semiconductors
Specification of environmental class for pressure contact IGCTs - OPERATION
Specification of environmental class for pressure contact IGCTs - STORAGE
Specification of environmental class for pressure contact IGCTs - TRANSPORTATION
5SYA2031
5SYA2032
5SYA2036
5SYA2046
5SYA2048
5SYA2051
5SZK9107
5SZK9109
5SZK9110
Legend: 1 standard 2 low on-state 3 low turn-off losses 4 projected for 2015
* Contact factory for symmetrical devices
1100 A
/
/
/
900 A
/
2200 A
/
/
/
1800 A
/
1 4000 A2 4000 A3 3600 A
5000 A (HPT)
3600 A (HPT)
3800 A (HPT)
4.5 kV
4.5 kV
4.5 kV
4.5 kV
5.5 kV
6.5 kV
4 8000 A
Document number
Type Reverse conducting
51 mm
630 A
/
/
/
520 A
/
Product range
Asymmetric
91 mmSi 68 mm 91 mmVDRM
*
140 mm
Documentation
Power and productivityfor a better world
Table 1 Product range
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