Post on 14-Dec-2015
AU Optronics Corp.
PEP1PEP1Process Condition ChemicalsPre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3
Sputter MoW:2350A
AlNd/MoW(3000/500A)MoW,AlNd Target,Kr
Coater Photo Resist 15000A Photo Resist,NBA
Stepper 21mj/cm2 -
Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36%
ADI CD/Overlay:L1:14+-1um -
Etch ICP Taper angle25+-10(MoW)
ICP Taper angle30+-15(AlNd/MoW)He
Stripper MoW:MEA,BDG:80 .60sec+O3:200 ,60sec℃ ℃Al/Nd/MoW,BDG:80 ,60sec+IPA:23 ℃ ℃
Stripper(MEA30%),IPA
OS/tester Criteria -
AU Optronics Corp.
Pre CleanPre Clean
Brush(Detergent LH300)
->Rinse->MS->O3->CJ->Spin Dry
AU Optronics Corp.
SputterSputter
MoW:2350A
AlNd/MoW(3000/500A)
AU Optronics Corp.
CoaterCoater
Photo Resist 15000A
NBA洗邊
AU Optronics Corp.
StepperStepper
21mj/cm2
AU Optronics Corp.
DeveloperDeveloper
Developer TMAH, Bake 130℃
AU Optronics Corp.
EtchEtch
ICP Taper angle25+-10(MoW)
ICP Taper angle30+-15(AlNd/MoW)
AU Optronics Corp.
StripperStripper
Stripper(Mea30%):
MoW:MEA,BDG:80 .60sec+O3:200 ,60sec℃ ℃
Al/Nd/MoW,BDG:80 ,60sec+IPA:23 ℃ ℃
AU Optronics Corp.
PEP2PEP2Process Condition Chemicals
SiON Pre Clean Brush->Rinse->MS->CJ->Spin Dry Detergent LH300
SiON PECVD SiON:1750A N2O,N2,SiH4,NH3
4Layer PreClean Brush->Rinse->MS->CJ->Spin Dry Photo Resist,NBA
4Layer PECVD SiON/g-SiN/a-Si/IS-SiNx
(1750/500/500/3300)+10secN2O treat
1.SiON:SiH4,N2O,N22. g-SiN:SiH4,NH3,N23.a-Si: SiH4.H24.IS-SiNx: SiH4,NH3,N2
Coater Photo Resist 15000A Photo Resist,NBA
Stepper 3500mj/cm2(Back side exposure)
21mj/cm2
-
Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36%
ADI Overlay:<=0.7um -
Etch 0.6%DHF 0.6%DHF
Stripper MEA,BDG:80 .60sec+O3:200 ,60sec℃ ℃ Stripper(MEA30%),IPA
AU Optronics Corp.
SiON Pre CleanSiON Pre Clean
Brush(Detergent LH300)
->Rinse->MS->CJ->Spin Dry
AU Optronics Corp.
SiON PECVDSiON PECVD
1.SiON:1750A
2.主沉積 :SiH4,N2O,N2,NH3
AU Optronics Corp.
4Layer PECVD - SiON4Layer PECVD - SiONSiON:1750A
1.SiON:1750A
2.主沉積 :SiH4,N2O,N2
AU Optronics Corp.
4Layer PECVD - g-SiN4Layer PECVD - g-SiNSiON:1750A
SiON:1750A1.g-SiN:500A
2.主沉積 : SiH4.NH3,N2
AU Optronics Corp.
4Layer PECVD - a-Si4Layer PECVD - a-SiSiON:1750A
SiON:1750A
g-SiN:500A1.a-Si:500A
2.主沉積 : SiH4,H2
AU Optronics Corp.
4Layer PECVD - IS4Layer PECVD - ISSiON:1750A
SiON:1750A
g-SiN:500A1.IS-SiNx: 500A
2.主沉積 : SiH4,NH3,N2 a-Si:500A
AU Optronics Corp.
CoaterCoater
Photo Resist 15000A
NBA洗邊
AU Optronics Corp.
Back side exposureBack side exposure
3500mj/cm2
AU Optronics Corp.
StepperStepper
22mj/cm2
AU Optronics Corp.
DeveloperDeveloper
Developer TMAH, Bake 130℃
AU Optronics Corp.
EtchEtch
0.6% DHF
AU Optronics Corp.
StripperStripper
Stripper(MEA30%):
MEA,BDG:80 .60sec+O3:200 ,60sec,IPA℃ ℃
AU Optronics Corp.
PEP3PEP3Process Condition Chemicals
N+ Pre Clean RinseLAL50O3->MS->CJ->Spin Dry
Detergent LH300,LAL50,O3
PECVD N+-SiNx:500A+-20% SiH4,PH3,H2
M2 PreClean RinseLAL50O3->MS->CJ->Spin Dry
Photo Resist,NBA
Sputter Mo/Al/Mo(180/2500/500A) Mo Target,Al Target,Ar
Coater Photo Resist 15000A Photo Resist,NBA
Stepper 28mj/cm2 -
Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36%
ADI Overlay:<=0.7um -
M2 Etch Taper angle 30+-15° Al-Etch:
HNO3,CH3COOH,H3PO4
3Layer Etch 80% Over Etch 72~78sec SF6,He,HCl,O2
Stripper MEA,BDG:80 .60sec+IPA23 ,℃ ℃28sec
Stripper(MEA30%),IPA
AU Optronics Corp.
N+ Pre CleanN+ Pre Clean
RinseLAL50O3->MS->CJ->Spin Dry
AU Optronics Corp.
PECVDPECVD
1.N+-SiNx:500A+-20%
2.主沉積 : SiH4,PH3,H2
AU Optronics Corp.
M2 Pre CleanM2 Pre Clean
1.N+-SiNx:500A+-20%
2.主沉積 : SiH4,PH3,H2
AU Optronics Corp.
SputterSputter
Mo/Al/Mo(180/2500/500A)
Mo Target,Al Target,Ar
AU Optronics Corp.
CoaterCoater
Photo Resist,NBA
NBA洗邊
AU Optronics Corp.
StepperStepper
Developer TMAH, Bake 130℃
AU Optronics Corp.
DeveloperDeveloper
Developer TMAH, Bake 130℃
AU Optronics Corp.
M2 EtchM2 EtchTaper angle 30+-15°
Al-Etch:
HNO3,CH3COOH,H3PO4
AU Optronics Corp.
3Layer N+,a-Si,g-SiN Dry Etch3Layer N+,a-Si,g-SiN Dry Etch
DryEtch:SF6,He,HCl,O2
80% Over Etch 72~78sec
AU Optronics Corp.
StripperStripper
Stripper(MEA30%):
MEA,BDG:80 ,65sec+IPA 23 ,28sec℃ ℃
AU Optronics Corp.
PEP4PEP4Process Condition Chemicals
Pre Clean RinseMS->CJ->Spin Dry Detergent LH300
PECVD P-SiNx:2000A+-15% SiH4,NH3,N2
Coater Photo Resist 30000+-1000A Photo Resist,NBA
Stepper 37mj/cm2 -
Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36%
ADI Overlay:<=0.7um -
Etch Taper angle 30+-15° Al-Etch:
HNO3,CH3COOH,H3PO4
Stripper MEA,BDG:80 .65sec+IPA23 ,℃ ℃28sec
Stripper(MEA30%),IPA
AU Optronics Corp.
PV Pre CleanPV Pre Clean
RinseMS->CJ->Spin Dry
AU Optronics Corp.
PV PECVDPV PECVD
1.P-SiNx:P-SiNx:2000A+-15%
2.主沉積 : SiH4,NH3,N2
AU Optronics Corp.
CoaterCoater
Photo Resist 30000A
NBA洗邊
AU Optronics Corp.
StepperStepper
AU Optronics Corp.
DeveloperDeveloper
Developer TMAH, Bake 130℃
AU Optronics Corp.
EtchEtch
5.7~8 BHF,32sec
AU Optronics Corp.
StripperStripper
AU Optronics Corp.
StripperStripper
AU Optronics Corp.
ITOITOOxalic acid
AU Optronics Corp.
ITOITO
AU Optronics Corp.
ITOITO
AU Optronics Corp.
ITOITO