AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry...

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AU Optronics Corp. PEP1 PEP1 Proces s Condition Chemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A) MoW,AlNd Target,Kr Coater Photo Resist 15000A Photo Resist,NBA Stepper 21mj/cm2 - Develop er Developer TMAH,Bake 130℃ Developer TMAH 2.36% ADI CD/Overlay:L1:14+-1um - Etch ICP Taper angle25+-10(MoW) ICP Taper angle30+-15(AlNd/MoW) He Strippe r MoW:MEA,BDG:80℃.60sec+O3:200℃, 60sec Al/Nd/MoW,BDG:80℃,60sec+IPA:23 Stripper(MEA30%),I PA

Transcript of AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry...

Page 1: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

PEP1PEP1Process Condition ChemicalsPre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3

Sputter MoW:2350A

AlNd/MoW(3000/500A)MoW,AlNd Target,Kr

Coater Photo Resist 15000A Photo Resist,NBA

Stepper 21mj/cm2 -

Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36%

ADI CD/Overlay:L1:14+-1um -

Etch ICP Taper angle25+-10(MoW)

ICP Taper angle30+-15(AlNd/MoW)He

Stripper MoW:MEA,BDG:80 .60sec+O3:200 ,60sec℃ ℃Al/Nd/MoW,BDG:80 ,60sec+IPA:23 ℃ ℃

Stripper(MEA30%),IPA

OS/tester Criteria -

Page 2: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

Pre CleanPre Clean

Brush(Detergent LH300)

->Rinse->MS->O3->CJ->Spin Dry

Page 3: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

SputterSputter

MoW:2350A

AlNd/MoW(3000/500A)

Page 4: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

CoaterCoater

Photo Resist 15000A

NBA洗邊

Page 5: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

StepperStepper

21mj/cm2

Page 6: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

DeveloperDeveloper

Developer TMAH, Bake 130℃

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AU Optronics Corp.

EtchEtch

ICP Taper angle25+-10(MoW)

ICP Taper angle30+-15(AlNd/MoW)

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AU Optronics Corp.

StripperStripper

Stripper(Mea30%):

MoW:MEA,BDG:80 .60sec+O3:200 ,60sec℃ ℃

Al/Nd/MoW,BDG:80 ,60sec+IPA:23 ℃ ℃

Page 9: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

PEP2PEP2Process Condition Chemicals

SiON Pre Clean Brush->Rinse->MS->CJ->Spin Dry Detergent LH300

SiON PECVD SiON:1750A N2O,N2,SiH4,NH3

4Layer PreClean Brush->Rinse->MS->CJ->Spin Dry Photo Resist,NBA

4Layer PECVD SiON/g-SiN/a-Si/IS-SiNx

(1750/500/500/3300)+10secN2O treat

1.SiON:SiH4,N2O,N22. g-SiN:SiH4,NH3,N23.a-Si: SiH4.H24.IS-SiNx: SiH4,NH3,N2

Coater Photo Resist 15000A Photo Resist,NBA

Stepper 3500mj/cm2(Back side exposure)

21mj/cm2

-

Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36%

ADI Overlay:<=0.7um -

Etch 0.6%DHF 0.6%DHF

Stripper MEA,BDG:80 .60sec+O3:200 ,60sec℃ ℃ Stripper(MEA30%),IPA

Page 10: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

SiON Pre CleanSiON Pre Clean

Brush(Detergent LH300)

->Rinse->MS->CJ->Spin Dry

Page 11: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

SiON PECVDSiON PECVD

1.SiON:1750A

2.主沉積 :SiH4,N2O,N2,NH3

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AU Optronics Corp.

4Layer PECVD - SiON4Layer PECVD - SiONSiON:1750A

1.SiON:1750A

2.主沉積 :SiH4,N2O,N2

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AU Optronics Corp.

4Layer PECVD - g-SiN4Layer PECVD - g-SiNSiON:1750A

SiON:1750A1.g-SiN:500A

2.主沉積 : SiH4.NH3,N2

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AU Optronics Corp.

4Layer PECVD - a-Si4Layer PECVD - a-SiSiON:1750A

SiON:1750A

g-SiN:500A1.a-Si:500A

2.主沉積 : SiH4,H2

Page 15: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

4Layer PECVD - IS4Layer PECVD - ISSiON:1750A

SiON:1750A

g-SiN:500A1.IS-SiNx: 500A

2.主沉積 : SiH4,NH3,N2 a-Si:500A

Page 16: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

CoaterCoater

Photo Resist 15000A

NBA洗邊

Page 17: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

Back side exposureBack side exposure

3500mj/cm2

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AU Optronics Corp.

StepperStepper

22mj/cm2

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AU Optronics Corp.

DeveloperDeveloper

Developer TMAH, Bake 130℃

Page 20: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

EtchEtch

0.6% DHF

Page 21: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

StripperStripper

Stripper(MEA30%):

MEA,BDG:80 .60sec+O3:200 ,60sec,IPA℃ ℃

Page 22: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

PEP3PEP3Process Condition Chemicals

N+ Pre Clean RinseLAL50O3->MS->CJ->Spin Dry

Detergent LH300,LAL50,O3

PECVD N+-SiNx:500A+-20% SiH4,PH3,H2

M2 PreClean RinseLAL50O3->MS->CJ->Spin Dry

Photo Resist,NBA

Sputter Mo/Al/Mo(180/2500/500A) Mo Target,Al Target,Ar

Coater Photo Resist 15000A Photo Resist,NBA

Stepper 28mj/cm2 -

Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36%

ADI Overlay:<=0.7um -

M2 Etch Taper angle 30+-15° Al-Etch:

HNO3,CH3COOH,H3PO4

3Layer Etch 80% Over Etch 72~78sec SF6,He,HCl,O2

Stripper MEA,BDG:80 .60sec+IPA23 ,℃ ℃28sec

Stripper(MEA30%),IPA

Page 23: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

N+ Pre CleanN+ Pre Clean

RinseLAL50O3->MS->CJ->Spin Dry

Page 24: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

PECVDPECVD

1.N+-SiNx:500A+-20%

2.主沉積 : SiH4,PH3,H2

Page 25: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

M2 Pre CleanM2 Pre Clean

1.N+-SiNx:500A+-20%

2.主沉積 : SiH4,PH3,H2

Page 26: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

SputterSputter

Mo/Al/Mo(180/2500/500A)

Mo Target,Al Target,Ar

Page 27: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

CoaterCoater

Photo Resist,NBA

NBA洗邊

Page 28: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

StepperStepper

Developer TMAH, Bake 130℃

Page 29: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

DeveloperDeveloper

Developer TMAH, Bake 130℃

Page 30: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

M2 EtchM2 EtchTaper angle 30+-15°

Al-Etch:

HNO3,CH3COOH,H3PO4

Page 31: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

3Layer N+,a-Si,g-SiN Dry Etch3Layer N+,a-Si,g-SiN Dry Etch

DryEtch:SF6,He,HCl,O2

80% Over Etch 72~78sec

Page 32: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

StripperStripper

Stripper(MEA30%):

MEA,BDG:80 ,65sec+IPA 23 ,28sec℃ ℃

Page 33: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

PEP4PEP4Process Condition Chemicals

Pre Clean RinseMS->CJ->Spin Dry Detergent LH300

PECVD P-SiNx:2000A+-15% SiH4,NH3,N2

Coater Photo Resist 30000+-1000A Photo Resist,NBA

Stepper 37mj/cm2 -

Developer Developer TMAH,Bake 130 ℃ Developer TMAH 2.36%

ADI Overlay:<=0.7um -

Etch Taper angle 30+-15° Al-Etch:

HNO3,CH3COOH,H3PO4

Stripper MEA,BDG:80 .65sec+IPA23 ,℃ ℃28sec

Stripper(MEA30%),IPA

Page 34: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

PV Pre CleanPV Pre Clean

RinseMS->CJ->Spin Dry

Page 35: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

PV PECVDPV PECVD

1.P-SiNx:P-SiNx:2000A+-15%

2.主沉積 : SiH4,NH3,N2

Page 36: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

CoaterCoater

Photo Resist 30000A

NBA洗邊

Page 37: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

StepperStepper

Page 38: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

DeveloperDeveloper

Developer TMAH, Bake 130℃

Page 39: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

EtchEtch

5.7~8 BHF,32sec

Page 40: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

StripperStripper

Page 41: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

StripperStripper

Page 42: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

ITOITOOxalic acid

Page 43: AU Optronics Corp. PEP1 ProcessConditionChemicals Pre Clean Brush->Rinse->O3->MS->CJ->Spin Dry Detergent LH300,O3 Sputter MoW:2350A AlNd/MoW(3000/500A)

AU Optronics Corp.

ITOITO

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AU Optronics Corp.

ITOITO

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AU Optronics Corp.

ITOITO