CMOS Technology 1.Why CMOS 2.Qualitative MOSFET model 3.Building a MOSFET 4.CMOS logic gates Handouts: Lecture Slides.
P-N JUNCTION. Single piece of SC material with half n-tpye and half p-type The plane dividing the two zones is called junction (plane lies where density.
Electronicdevicescircuits 140517065905-phpapp01
Http:// Budapest University of Technology and Economics Department of Electron Devices Solution of the 1 st mid-term test 20 October 2009.
EE130/230A Discussion 6 Peng Zheng. Carrier Action under Forward Bias When a forward bias (V A >0) is applied, the potential barrier to diffusion across.
Semiconductor Device Physics Lecture 4 Dr. Gaurav Trivedi, EEE Department, IIT Guwahati.
PN Junction ES230 Jack Ou. Review What if we introduce n-type and p-type dopants into two adjacent sections of a piece of silicon?
PN Junctions42 Diodes under Bias Qualitatively the function of the diode under bias can be described best in terms of energy band levels. In the intrinsic.
MatE/EE 1671 EE/MatE 167 Diode Review. MatE/EE 1672 Topics to be covered Energy Band Diagrams V built-in Ideal diode equation –Ideality Factor –RS Breakdown.
EE130/230A Discussion 6
Orit Skorka, Dan Sirbu, and Dileepan Joseph University of Alberta, Canada Optimization of Photodetector Thickness in Vertically-Integrated Image Sensors.
Application of flywheel battery in solar power system