To learn more about ON Semiconductor, please visit our website at www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected].
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDM
S004N08C
N-C
hannel Shielded Gate Pow
erTrench ® MO
SFET
www.onsemi.com
Semiconductor Components Industries, LLC, 2016 Publication Order Number: December, 2016, Rev. 1.1 FDMS004N08C/D
1
FDMS004N08C N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 126 A, 4.0 mΩFeatures
Shielded Gate MOSFET Technology
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 10.4 mΩ at VGS = 6 V, ID = 22 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant
General DescriptionThis N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
ApplicationsPrimary DC-DC MOSFET
Synchronous Rectifier in DC-DC and AC-DC
Motor Drive
Solar
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings UnitsVDS Drain to Source Voltage 80 VVGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous TC = 25 °C (Note 5) 126
A -Continuous TC = 100 °C (Note 5) 80 -Continuous TA = 25 °C (Note 1a) 18 -Pulsed (Note 4) 637
EAS Single Pulse Avalanche Energy (Note 3) 486 mJ
PDPower Dissipation TC = 25 °C 125
WPower Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 1.0°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width QuantityFDMS004N08C FDMS004N08C Power 56 13 ’’ 12 mm 3000 units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom Top
Pin 1S
GS
S
D
DD
D
Power 56
FDM
S004N08C
N-C
hannel Shielded Gate Pow
erTrench ® MO
SFET
www.onsemi.com
2
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 80 VΔBVDSS ΔTJ
Breakdown Voltage TemperatureCoefficient ID = 250 μA, referenced to 25 °C 40 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 μAIGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.1 4.0 V ΔVGS(th) ΔTJ
Gate to Source Threshold VoltageTemperature Coefficient ID = 250 μA, referenced to 25 °C -8.3 mV/°C
rDS(on) Static Drain to Source On ResistanceVGS = 10 V, ID = 44 A 3.4 4.0
mΩVGS = 6 V, ID = 22 A 5.2 10.4VGS = 10 V, ID = 44 A, TJ = 125 °C 5.8 6.5
gFS Forward Transconductance VDS = 5 V, ID = 44 A 98 S
Ciss Input CapacitanceVDS = 40 V, VGS = 0 V,f = 1 MHz
3035 4250 pFCoss Output Capacitance 940 1315 pFCrss Reverse Transfer Capacitance 27 40 pFRg Gate Resistance 0.1 1.1 2.3 Ω
td(on) Turn-On Delay TimeVDD = 40 V, ID = 44 A,VGS = 10 V, RGEN = 6 Ω
17 30 nstr Rise Time 6 12 nstd(off) Turn-Off Delay Time 25 40 nstf Fall Time 4 10 nsQg Total Gate Charge VGS = 0 V to 10 V
VDD = 40 V, ID = 44 A
39 55 nCQg Total Gate Charge VGS = 0 V to 6 V 25 34 nCQgs Gate to Source Charge 13 nCQgd Gate to Drain “Miller” Charge 7 nCQoss Output Charge VDD = 40 V, VGS = 0 V 55 nCQsync Total Gate Charge Sync. VDS = 0 V, ID = 44 A 35 nC
VSD Source to Drain Diode Forward VoltageVGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2
VVGS = 0 V, IS = 44 A (Note 2) 0.8 1.3
trr Reverse Recovery TimeIF = 22 A, di/dt = 300 A/μs
26 41 nsQrr Reverse Recovery Charge 48 76 nCtrr Reverse Recovery Time
IF = 22 A, di/dt = 1000 A/μs19 31 ns
Qrr Reverse Recovery Charge 108 174 nCNotes:1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.3. EAS of 486 mJ is based on starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 18 A, VDD = 80 V, VGS =10 V. 100% test at L = 0.1 mH, IAS = 57 A.4. Pulsed Id please refer to Fig 11 SOA graph for more details.5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
G DF
DS
SF SS
G DF
DS
SF SS
50 °C/W when mounted on a 1 in2 pad of 2 oz copper
125 °C/W when mounted on a minimum pad of 2 oz copper.
FDM
S004N08C
N-C
hannel Shielded Gate Pow
erTrench ® MO
SFET
www.onsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted.
Figure 1.
0 1 2 3 4 50
50
100
150
200
250
300
VGS = 6 V
VGS = 5.5 V
VGS = 8 V
PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 10 V
I D, D
RA
IN C
UR
REN
T (A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 50 100 150 200 250 3000
1
2
3
4
5
VGS = 5.5 V
PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX
NO
RM
ALI
ZED
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E
ID, DRAIN CURRENT (A)
VGS = 6 V
VGS = 8 V
VGS = 5 V
VGS = 10 V
Normalized On-Resistance vs. Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 1500.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 44 AVGS = 10 V
NO
RM
ALI
ZED
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E
TJ, JUNCTION TEMPERATURE (oC)
vs. Junction TemperatureFigure 4.
4 5 6 7 8 9 100
5
10
15
20
25
TJ = 125 oC
ID = 44 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
r DS(
on),
DR
AIN
TO
SO
UR
CE
ON
-RES
ISTA
NC
E (m
Ω) PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs. Gate to Source Voltage
Figure 5. Transfer Characteristics
3 4 5 6 7 8 90
60
120
180
240
300
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μsDUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I D, D
RA
IN C
UR
REN
T (A
)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.20.001
0.01
0.1
1
10
100300
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
I S, R
EVER
SE D
RA
IN C
UR
REN
T (A
)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward Voltage vs. Source Current
FDM
S004N08C
N-C
hannel Shielded Gate Pow
erTrench ® MO
SFET
www.onsemi.com
4
Figure 7.
0 8 16 24 32 400
2
4
6
8
10ID = 44 A
VDD = 50 V
VDD = 40 V
V GS,
GA
TE T
O S
OU
RC
E VO
LTA
GE
(V)
Qg, GATE CHARGE (nC)
VDD = 30 V
Gate Charge Characteristics Figure 8.
0.1 1 10 801
10
100
1000
10000
f = 1 MHzVGS = 0 V
CA
PAC
ITA
NC
E (p
F)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs. Drain to Source Voltage
Figure 9. Unclamped Inductive Switching Capability
0.001 0.01 0.1 1 10 100 10001
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I AS,
AVA
LAN
CH
E C
UR
REN
T (A
)
Figure 10.
25 50 75 100 125 1500
25
50
75
100
125
150
VGS = 6 V
RθJC = 1.0 oC/W
VGS = 10 V
I D, D
RA
IN C
UR
REN
T (A
)
TC, CASE TEMPERATURE (oC)
Maximum Continuous Drain Current vs Case Temperature
Figure 11. Forward Bias Safe Operating Area
0.1 1 10 100 5000.1
1
10
100
1000
CURVE BENT TO MEASURED DATA
10 μs
100 ms/DC10 ms1 ms
100 μs
I D, D
RA
IN C
UR
REN
T (A
)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS LIMITED BY rDS(on)
SINGLE PULSETJ = MAX RATEDRθJC = 1.0 oC/WTC = 25 oC
Figure 12.
10-5 10-4 10-3 10-2 10-1 110
100
1000
10000
100000SINGLE PULSERθJC = 1.0 oC/WTC = 25 oC
P(PK
), PE
AK
TR
AN
SIEN
T PO
WER
(W)
t, PULSE WIDTH (sec)
Single Pulse Maximum Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted.
FDM
S004N08C
N-C
hannel Shielded Gate Pow
erTrench ® MO
SFET
www.onsemi.com
5
Figure 13.
10-5 10-4 10-3 10-2 10-1 10.001
0.01
0.1
12
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
r(t),
NO
RM
ALI
ZED
EFF
ECTI
VE T
RA
NSI
ENT
THER
MA
L R
ESIS
TAN
CE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5 0.2 0.1 0.05 0.02 0.01
NOTES:ZθJC(t) = r(t) x RθJCRθJC = 1.0 oC/W
Duty Cycle, D = t1 / t2Peak TJ = PDM x ZθJC(t) + TC
PDM
t1t2
Junction-to-Case Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted.
FDM
S004N08C
N-C
hannel Shielded Gate Pow
erTrench ® MO
SFET
www.onsemi.com
6
Dimensional Outline and Pad Layout
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
C
L
L
C
PKG
PKG
5.10
6.15
TOP VIEW
SIDE VIEW
1 4
8 5
A
B
NOTES: UNLESS OTHERWISE SPECIFIED
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
5.85
5.65
5.00
4.80
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
OF THE PACKAGE
(0.50)
(0.52)
SEE
DETAIL C
BOTTOM VIEW
0°-12°
0.35
0.15
C
SEATING
PLANE
DETAIL C
SCALE: 2:1
0.05
0.00
1 2 3 4
8 7 6 5
0.76
0.51
0.51
0.31
(8X)
3.81
0°-12°
0.35
0.15
0.30
0.05
SEE
DETAIL B
DETAIL B
SCALE: 2:1
(0.34)
1.27
0.10 C A B
3.96
3.61
3.48
+0.30
-0.10
0.44±0.10
0.08 C
0.10 C
1.10
0.90
8X
(0.30)
(2X)
1.27
3.81
1.27
6.61
3.91
4.52
1.27
1 2 3 4
8 567
LAND PATTERN
RECOMMENDATION
0.77
0.61
KEEP OUT
AREA
5.10
3.75
0.20
+0.10
-0.15
(8X)
6.25
5.90
5.20
4.80
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
www.onsemi.com1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800−282−9855 Toll FreeUSA/Canada
Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910
Japan Customer Focus CenterPhone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:Literature Distribution Center for ON Semiconductor19521 E. 32nd Pkwy, Aurora, Colorado 80011 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: [email protected]
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your localSales Representative
© Semiconductor Components Industries, LLC
Top Related