Transforming Concepts To Reality: New Technologies for New ...
Transcript of Transforming Concepts To Reality: New Technologies for New ...
Max M. Shulaker
Transforming Concepts To Reality:
New Technologies for New Applications
Massachusetts Institute of Technology
Data ExplosionE
xa
B(B
illio
ns o
f G
B)
0 4
0K
2006 Year 2020
Raw unstructured dataWide variety & complexity
“Swimming in sensors, drowning in data”
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• Mine, search, analyze data in real-time
Data centers, mobile phones, robots
Many Obstacles Simultaneously
Power Wall Memory Wall
Execution time
Compute
Memory access
10M
Hz
5G
Hz
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Also:
interconnect wall,
complexity wall,
resilience wall…
Communication Wall
1980 2010
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Enabling New Applications:
new sensors
better transistors
novel memories
new architectures
thermal management
improved algorithms
yield and reliability
Not
Not
Not
Not
Not
Not
NotNanosystem
s
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Solution: NanosystemsTransform new nanotech
into new systemsenabling new applicationsNew Devices
New Fabrication
New Sensors
Abundant-Data
Applications
Revolutionary
Architectures
a
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Systems Today
2-Dimensional
memorysensor
computing
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Future Nanosystems
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Storage (memory)
Increased Functionality
Fine-grained
3D integration
Computing Logic
Impossible with today’s technologies
Future Nanosystems
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Storage (memory)
Increased Functionality
Fine-grained
3D integration
Computing Logic
Realizing Nanosystems TODAYEnabled by Emerging Nanotechnologies
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~1.2nm
CNT
Gate-oxide
• Energy efficiency: ~10X benefit [1]
• Chemical sensors: ideal candidate
1 [Chang IEDM 2012]
2 µm
Gate
2 µm
Gate
Carbon Nanotube FET (CNFET)
Ideal CNFET Inverter
P+ Doped
N+ Doped
INPUT
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Ideal CNFET sensor
Functionalization(metal porphyrin, DNA,
SAMs, polymers, etc.)
INPUT
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BIG Promise, BUT Major Obstacles
Mis-positioned CNTs Metallic CNTs
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Combined processing + design solutions
Most Importantly
• VLSI processing
No per-unit customization
• VLSI design flow
Immune CNT library
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[Shulaker Nature 13] Collaborators: G. Hills, N. Patil, H. Wei, H. Chen, H.-S.P. Wong, S. Mitra
CNT Computer
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Concurrent programs: Sort, Count
CLK1
A[0]
A[1]
A[2]
B[0]
B[1]
B[2]
CLK1
A
B
B-A
[0]
[1]
[2]
[3]
[4]
Ne
xt
Instr
Ad
dr
Data fetch addresses ALU result & next instruction
bit
bit
MIPS
instructions
emulated
• AND• ANDI
• BLEZ• BLTZ
• J• LB
• OR• ORI
• SLL• SLLV • SRLV
• SRL • XOR• XORI
• BGEZ • BNE • NOOP • SB • SRA • SUBU
Multi-Tasking
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CNFET Gas SensorsR
ela
tive
sen
sit
ivit
y
Functionalization:
How do we do better?
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• Massive ILV density > TSV density
Monolithic
Nano-scale
inter-layer vias (ILVs)
TSV (chip stacking)
Through silicon via
(TSV)
3D Integration
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logic
memory
ILVs
Monolithic 3D: Logic + Memory + Sensing
• Increased data bandwidth
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• Memory access time
Less processor idle time
• Memory access energy
Memory + logic stacking
• Resource Contention
Wide connectivity
Energy and Performance Benefits
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• Low-temperature fabrication: <400 °C
Major obstacle for silicon CMOS
Realizing Monolithic 3D
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Logic/ Sensing Memory
CNFETs RRAM
Realizing Monolithic 3D
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<200 °C <200 °C
• Low-temperature fabrication: <400 °C
+ +Emerging
Logic/ Sensors
Emerging
Memory
Monolithic 3D
Integration
Realizing Monolithic 3D
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Naturally enabled
• Combine device + architectural benefits
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3D NanoSystem
memory
sensing
logic
logic
• First monolithic 3D system
• >2 Million CNFETs, 1 Mbit RRAM
[Shulaker Nature 17]
26[Shulaker Nature 17]
Wafer-scale design + fabrication
1 2 3
4 5 6
7 8
NOT Just a Cartoon
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3D NanoSystem: Fabrication
• Starting substrate
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• Silicon FETs
1050 ºC dopant activation
3D NanoSystem: Fabrication
1. Bottom layer only
2. Silicon OR CNFET
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• Inter-layer dielectric (ILD)
3D NanoSystem: Fabrication
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• Inter-layer vias (ILVs)
Ultra-dense vertical inter-connects
3D NanoSystem: Fabrication
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• CNFET logic
3D NanoSystem: Fabrication
Memory access circuitry
Classification acceleratoron-chip computation
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• 2nd ILD + ILVs
3D NanoSystem: Fabrication
• Memory: RRAM
Pt/HfOX/TiN
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3D NanoSystem: Fabrication
RRAM array: 1 Mbit
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• 3rd ILD + ILVs
3D NanoSystem: Fabrication
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• CNFET logic
3D NanoSystem: Fabrication
CNTs X100,000
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• CNFET functionalization
3D NanoSystem: Fabrication
>1 million gas sensors
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Integrated Computation + Memory + Sensing
CNT computing logic
Memory
Ultra-dense
vertical connections
Millions of sensors
Terabytes / second
Abundant sensor data:
Extensive + accurate classification
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Experimental Demo
Vacuum
chamberElectrical
feedthrough
to chip
Bubblers
Gas Flow Control
[Shulaker Nature 17]
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Raw Data
Lemon Juice
Rubbing Alcohol
Sensor data written
to RRAM array
0 64 1280
50
0 64 1280
50
Measured Output
clock cycle
Fe
atu
re V
alu
eF
ea
ture
Va
lue
CNFET classification accelerator
[Shulaker Nature 17]
Feature 2
Feature 1
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Experimental Results
Nitrogen
Lemon juice
Vinegar
Rubbing Alcohol
Vodka
Wine
Beer-0.5 0 0.5
-0.5
0
0.5
feature 1 (normalized units)
fea
ture
2 (
no
rma
lize
d u
nits)
PCA classificaiton
gas 1: trial 3
gas 2: trial 1
gas 2: trial 2
gas 2: trial 3
gas 3: trial 1
gas 3: trial 2
gas 3: trial 3
gas 4: trial 1
gas 4: trial 2
gas 4: trial 3
gas 5: trial 1
gas 5: trial 2
gas 5: trial 3
gas 6: trial 1
gas 6: trial 2
gas 6: trial 3
gas 7: trial 1
gas 7: trial 2
gas 7: trial 3
Principle Component Analysis (PCA)
[Shulaker Nature 17]
3D NanoSystem: Take-Away
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3D NanoSystem: Take-Away
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• Energy-efficient logic + memory
Heterogeneous integration
3D NanoSystem: Take-Away
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• Energy-efficient logic + memory
Heterogeneous integration
• High bandwidth communication
Fine-grained 3D integration
3D NanoSystem: Take-Away
• Energy-efficient logic + memory
Heterogeneous integration
• High bandwidth communication
Fine-grained 3D integration
• Transform massive data into useful info
Sensing immersed in computation + memory
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Massively Parallel Sensing Immersed in Computation
MIT-ADI-MGH Collaboration
Memory
Millions of sensors
Computing
Health
Monitoring
Cancer
Screening
Early Disease
Detection
Infectious Disease
Tracking
Big-Data Healthcare Analytics:
New Technologies New Applications
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Conclusion
• Nanosystems useful today
Exciting opportunities
• New solutions: elegantly simple
Combined processing + circuit design
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Future Nanosystem
Prototypes
First Nanosystem
Demos
CNTs
High Performance
CNFETs