TO-126 Plastic-Encapsulate Transistors
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FEATURES Medium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP122 TIP127 Unit V CBO Collector-Base Voltage 100 V V CEO Collector-Emitter Voltage 100 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 5 A P C * Collector Power Dissipation 1.25 W R θJA Thermal Resistance Junction to Ambient 100 ℃/W R θJc Thermal Resistance Junction to Case 8.33 ℃/W T J Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ TO-126 1. EMITTER 2.COLLECTOR 3. BASE -100 -100 -5 -5 TIP122 Darlington Transistor (NPN) TIP127 Darlington Transistor (PNP) Equivalent Circuit TIP122 , TIP127o Solid dot = Green molding compound device, if none, the normal device ode ORDERING INFORMATION Part Number Package Packing Method Pack Quantity TIP122 TO-126 Bulk TIP127 TO-126 TIP122-TU TO-126 Tube TIP127-TU TO-126 Tube Bulk TIP122 XX TIP127 XX R1 R2 R1 R2 NPN PNP 200pcs/Bag 60pcs/Tube 60pcs/Tube 200pcs/Bag JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 1 Rev. - 1.0 www.jscj-elec.com R1 typ. =5 K Ω R2 typ. =210 Ω R1 typ. =5 K Ω R2 typ. =210 Ω
Transcript of TO-126 Plastic-Encapsulate Transistors
FEATURESMedium Power Complementary Silicon Transistors
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter TIP122 TIP127 Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 5 A
PC * Collector Power Dissipation 1.25 W
RθJA Thermal Resistance Junction to Ambient 100 ℃/W
RθJc Thermal Resistance Junction to Case 8.33 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃
TO-126
1. EMITTER
2.COLLECTOR
3. BASE
-100
-100
-5
-5
TIP122 Darlington Transistor (NPN) TIP127 Darlington Transistor (PNP)
������� Equivalent Circuit
TIP122 , TIP127,!�-�����o.�� Solid dot = Green molding compound device, if none, the normal device //,ode �
ORDERING INFORMATION
Part Number Package Packing Method Pack Quantity
TIP122 TO-126 Bulk
TIP127 TO-126
TIP122-TU TO-126 Tube
TIP127-TU TO-126 Tube
Bulk
TIP122 XX�
TIP127 XX�
R1 R2 R1 R2
NPN PNP
200pcs/Bag
60pcs/Tube
60pcs/Tube
200pcs/Bag
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
1 Rev. - 1.0www.jscj-elec.com
R1 typ. =5 KΩ R2 typ. =210 ΩR1 typ. =5 KΩ R2 typ. =210 Ω
* This test is performed with no heat sink at Ta=25℃.
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aT =25� unless otherwise specified
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 100 V
Collector-emitter breakdown voltage VCEO(SUS) IC=30mA,IB=0 100 V
Collector cut-off current ICBO VCB=100V, IE=0 0.2 mA
Collector cut-off current ICEO VCE=50 V, IB=0 0.5 mA
Emitter cut-off current IEBO VEB=5 V, IC=0 2 mA
hFE(1) VCE= 3V, IC=0.5A 1000DC current gain
hFE(2) VCE= 3V, IC=3 A 1000
Collector-emitter saturation voltage VCE(sat) IC=3A,IB=12mA
IC=5 A,IB=20mA
2
4 V
Base-emitter voltage VBE VCE=3V, IC=3 A 2.5 V
Output Capacitance Cob VCB=10V, IE=0,f=0.1MHz 200 pF
Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V
Collector-emitter breakdown voltage VCEO(SUS) IC=-30mA,IB=0 -100 V
Collector cut-off current ICBO VCB=-100V, IE=0 -0.2 mA
Collector cut-off current ICEO VCE=-50 V, IB=0 -0.5 mA
Emitter cut-off current IEBO VEB=-5 V, IC=0 -2 mA
hFE(1) VCE=-3V, IC=-0.5A 1000DC current gain
hFE(2) VCE=-3V, IC=-3 A 1000
Collector-emitter saturation voltage VCE(sat) IC=-3A,IB=-12mA
IC=-5 A,IB=-20mA
-2
-4V
Base-emitter voltage VBE VCE=-3V, IC=-3 A -2.5 V
Output Capacitance Cob VCB=-10V, IE=0,f=0.1MHz 300 pF
TIP122 NPN
TIP127 PNP
12000
12000
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0 25 50 75 100 125 1500
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CAPA
CITA
NCE
C
(p
F)
REVERSE VOLTAGE V (V)
Cob
Cib
f=1MHzIE=0/IC=0Ta=25℃
VCB/ VEBCob/ Cib ——
30
T a=1
00℃
T a=2
5℃
COLL
CETO
R CU
RREN
T
I C (m
A)
BASE-EMITER VOLTAGE VBE (mV)
IC VBE
COMMON EMITTERVCE=3V
COLL
ECTO
R PO
WER
DIS
SIPA
TIO
N
P
C (m
W)
AMBIENT TEMPERATURE Ta ( )℃
PC —— Ta
50
4000
3000
50005000
8000
——
BASE
-EM
ITTE
R SA
TURA
TIO
NVO
LTAG
E
V BEsa
t (m
V)
COLLECTOR CURRENT IC (mA)
β=250
Ta=100℃
Ta=25℃
ICVBEsat ——
50
COLL
ECTO
R-EM
ITTE
R SA
TURA
TIO
NVO
LTAG
E
V CEsa
t (m
V)
COLLECTOR CURRENT IC (mA)
ICVCEsat ——
Ta=100℃
Ta=25℃
β=250
DC C
URRE
NT G
AIN
h FE
COLLECTOR CURRENT IC (mA)
COMMON EMITTERVCE=3V
Ta=25℃
Ta=100℃
IChFE ——
TIP122
1mA 0.9mA 0.8mA 0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
IB=0.2mACOLL
ECTO
R CU
RREN
T
I C (A
)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMONEMITTERTa=25℃
Static Characteristic
Typical Characteristics
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TO-126 Package Outline Dimensions
Min Max Min MaxA 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054c 0.450 0.600 0.018 0.024D 7.400 7.800 0.291 0.307E 10.600 11.000 0.417 0.433e
e1 4.480 4.680 0.176 0.184h 0.000 0.300 0.000 0.012L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091P 3.900 4.100 0.154 0.161Φ 3.000 3.200 0.118 0.126
Symbol Dimensions In Millimeters Dimensions In Inches
2.290 TYP 0.090 TYP
4www.jscj-elec.com Rev. - 1.0
