2N7002X MOSFET( N-Channel )

FEA TURES

MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit

VDS Drain-Source Voltage 60 V

ID Drain Current 115 mA

PD Power Dissipation 500 mW

TJ Junction Temperature 150

SOT-89-3L

1.GATE 2. DRAIN 3. SOURCE

TSTG Storage Temperature -55~+150

High density cell design for low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability

RθJA Thermal Resistance from Junction to Ambient 250 /W

VGS Gate -Source Voltage ±20 V

V(BR)DSS RDS(on)MAX ID

60V 5Ω@10V

115mA7Ω@5V

MARKING

Equivalent Circuit

APPLICATION Load Switch for Portable Devices

DC/DC Converter

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate MOSFETS

1 Rev - 1.0www.jscj-elec.com

MOSFET ELECTRICAL CHARACTERISTICS

aT =25 unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit

Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=250µA 60

Gate-threshold voltage* V(GS)th VDS=VGS, ID=250µA 1 2.5 V

Gate-body leakage lGSS VDS=0V, VGS= 20 V 80 nA

VDS=60V, VGS=0V 80 Zero gate voltage drain current IDSS nA

VGS=10V, ID=500mADrain-source on-resistance* RDS(on)

VGS=5V, ID=50mA

Forward tranconductance* gfs VDS=10V, ID=200mA 80 500 ms

Diode forward voltage* VSD IS=115mA,VGS=0V 0.55 1.2 V

Input capacitance Ciss 50

Output capacitance Coss

Reverse transfer capacitance Crss

VDS=25V, VGS=0V,f=1MHz 25

5

pF

± ±

Turn-on time

Turn-off time td(on)

td(off)

VDD=25V,RL=50 ,ID=500mA,VGEN=10V,RG=25

Ω Ω

20

40ns

* Pulse Test: Pulse width ≤300µs,duty cycle≤2%.

** These parameters have no way to verify.

**

**

**

**

**

5

7Ω

Drain-source on-voltage VDS(on) VGS=5V, ID=50mA 0.05 0.375 V VGS=10V, ID=500mA 0.5 3.75 V

2 Rev - 1.0www.jscj-elec.com

0 6 12 180

2

4

6

0 2 4 60.0

0.2

0.4

0.6

0.8

1.0

0.2 0.4 0.6 0.8 1.0 1.2 1.41E-3

0.01

0.1

1

0 1 2 3 4 50.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.0 0.2 0.4 0.6 0.8 1.00

1

2

3

ID=50mA

ID=500mA

IDRDS(ON) ——

Ta=25

Pulsed

VGSRDS(ON) ——

ON

-RE

SIS

TA

NC

E

RD

S(O

N)

(Ω

)

GATE TO SOURCE VOLTAGE VGS

(V)

Ta=25

Pulsed

Ta=25

Pulsed

Transfer Characteristics

DR

AIN

CU

RR

EN

T

I D

(A

)

GATE TO SOURCE VOLTAGE VGS

(V)

3E-3

2

Ta=25

Pulsed

0.3

0.03

VSDIS ——

SO

UR

CE

CU

RR

EN

T

I S

(A)

SOURCE TO DRAIN VOLTAGE VSD

(V)

VGS

=5V

VGS

=10V,9V,8V,7V,6V

VGS

=4V

VGS

=3V

Output Characteristics

DR

AIN

CU

RR

EN

T

I D

(A

)

DRAIN TO SOURCE VOLTAGE VDS

(V)

VGS

=5V

VGS

=10V

Ta=25

Pulsed

ON

-RE

SIS

TA

NC

E

RD

S(O

N)

(Ω

)

DRAIN CURRENT ID (A)

Typical Characteristics

3 Rev - 1.0www.jscj-elec.com

Min Max Min MaxA 1.400 1.600 0.055 0.063b 0.320 0.520 0.013 0.020

b1 0.400 0.580 0.016 0.023c 0.350 0.440 0.014 0.017D 4.400 4.600 0.173 0.181D1E 2.300 2.600 0.091 0.102

E1 3.940 4.250 0.155 0.167e

e1L 0.900 1.200 0.035 0.047

SymbolDimensions In Millimeters Dimensions In Inches

1.550 REF. 0.061 REF.

1.500 TYP. 0.060 TYP.3.000 TYP. 0.118 TYP.

SOT-89-3L Package Outline Dimensions

SOT-89-3L Suggested Pad Layout

4 Rev - 1.0www.jscj-elec.com

NOTICE JSCJ reserve the right to make modifications,enhancements,improvements,corrections or

other changes without turther notice to any product herein.JSCJ does not assume any liability arising out of the application or use of any product described herein.

SOT-89-3L Tape and Reel

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