Test ISIS1 P-well device on board V1.4 RAL Z. Zhang & K. Stefanov.
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Transcript of Test ISIS1 P-well device on board V1.4 RAL Z. Zhang & K. Stefanov.
Test ISIS1 P-well device on board V1.4
RAL Z. Zhang & K. Stefanov
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Content
• Why new test board (V1.4)– Test with board V1.2– Looking for direct evidence
• Result on new board– Photo gate events counts– Storage pixel events counts
• Conclusion
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Test on Board V1.2
• Several indirect methods were used – Ratio of event count on photo gate over storage pixel
• Normalize the date for comparison• Useful number for the device: ratio of real and “fake” events
– Compare the ratio for different devices and settings• Normal device • Medium doped device• Heaviest doped device and different CLK amplitude
• No direct indication on punch-through
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Ratio with Fixed Photo Gate Voltage
Ratio vs Threshold (PG=18V)
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Threshold
Rat
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P-well_1(4V) P-well_1(8V) P-well_2(4V ) Normal
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Ratio with Fixed Threshold
Ratio of event count (Threshold = 1110 e-)
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PG Voltage (V)
Ratio
P-well_1(4V) P-well_1(8V) P-well_2(4V) Normal
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Looking for Direct Evidence
• New test board– Reduce the photo gate voltage – Reduce the offset of CLK – Minimize the change from V1.2– Change the voltage of substrate
• Punch-through on photo gate
• Result on storage pixel
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Ratio with Punch-through
Ratio vs PG Voltage CLK offset = -4 V thresold =1110e
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-1 4 9 14 19 24
Voltage
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P-well1 Normal ISIS1
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Event Count with Punch-throgh
Event count with different CLK offset
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Photo gate voltage
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CLK offset=0 CLK offset=-4
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Events Counts on Storage pixel (1)CLK p-p= 4V; bias from -2 to 1 V; Normalized histogram plot
Offset = -2 V (1221) Offset = -1 V (1222) Offset = 0 V (1223)
Normal ISIS1 (833)Offset = 2 V (1225)Offset = 1 V (1224)
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Events count on Storage pixel(2)
Offset = -3 V (1220) Offset = -2 V (1221) Offset = -1 V (1222)
Offset = 2V (1225)Offset = 1 V (1224)Offset = 0 V (1223)
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Events counts on storage pixel(3)
Storage pixel event count
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Threshold
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-3V 0V 2V
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Conclusion
• The function of p-well has been seen directly:– It shields the storage pixels from collecting charges
generated in p region– It guides the charges in p region into photo gate
• The ratio (real /“fake” events) is increased– Over same integration time, one storage pixel, the
ratio can reach ~60 ( ~ 7 for normal ISIS1) – We have 20 storage pixels, looking forward to
ISIS(2+)