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Transcript of S-functions Presentation: The S-parameters for nonlinear components - Measure, Model, Verify,...
March 2011
S-functions“The S-parameters
for nonlinear components”
- Measure, Model, Verify, Simulate -
An application in ICE
© 2011 2
Outline
● Why S-functions? What is the impact?● S-functions, the “S-parameters” for all nonlinear applications?● S-functions: Key Benefits● Theory: from S-parameters to S-functions● Applicability and Assumptions of S-functions● Confidence in S-functions● S-function Extraction and Verification Tool● Deployment of S-functions in ADS and MWO / VSS● Strengths and Key Capabilities● References● Conclusion
© 2011 3
Why S-parameters?
● Complete characterization of a component in linear mode of operation● Derive insertion loss, return loss, gain, …
● S-parameters enable system-level interpretation of behavior of the component● Low – pass filtering, high reflective, ...
● S-parameters enable design in conjunction with other circuits
● S-parameters can be extracted for the designed circuit
● The S-parameters can be measured for the manufactured circuit and can be compared
DESIGN
TEST in Manufacturing
S-parameters close the characterization, design and test loop
© 2011 4
S-parameter Design- and Test-Cycle for Linear Applications
At the Foundry
Semiconductor Manufacturer
PassiveDevices
S-parameters
Design kitDesign library
[S-parameter based]
© 2011 5
S-parameter Design- and Test-Cycle for Linear Applications
At the Semiconductor Manufacturer
Design Houses
S-parameters Design kitDesign library
[S-parameter based]
Design Chips
System Manufacturers
Iterations almost completely eliminated
© 2011 6
Beyond S-parameters???
● S-parameters, the behavioural model for “linear” applications
● Components in linear mode of operation only● Filters● Transistors under small signal of excitation● ...
● Their success is based on its uniform approach for linear RF and microwave problems both to measure and to simulate
● What about components in nonlinear mode of operation?
● No uniform approach for nonlinear RF and microwave problems
● There is a lot of “trial and error” or “measure – tweak”
● S-parameters are used mainly during device modelling in conjunction with a lot of model expertise to go from small-signal to large-signal
© 2011 7
“Trial-Error” Design- and Test-Cycle for “Nonlinear” Applications
At the Foundry
Semiconductor Manufacturer
Design kitDesign library
Devices Modelling(6 months)
Small-SignalLarge-SignalLoad-PullMathematics...
© 2011 8
“Trial-Error” Design- and Test-Cycle for “Nonlinear” Applications
At the Semiconductor Manufacturer
Design Houses
InitialDesign
Chips
System Manufacturers
Trial and Error
DataSheetEval Board
● Models do not meet the needs of application● To time costly to develop own models● Wafer fabs cannot worry about specific problems
© 2011 9
The Magic ...
S-Parameters
S-
S-functionsS-functions
© 2011 10
The S-function Design- and Test-Cycle for Active Devices
At the Foundry
Semiconductor Manufacturer
S-Functions
Design kitDesign library
[S-functions based (*)]Devices
(*) S-functions for different applications
© 2011 11
The S-function Design- and Test-Cycle for Active Devices
At the Semiconductor Manufacturer
Design Houses
S-functions Design kitDesign library
[S-functions based]
Design Chips
System Manufacturers
Reducing the number of iterations
Improving S-functions with application-specific information
© 2011 12
Why S-functions? Adopting the S-parameter paradigm
● “Complete” characterization of a component in nonlinear mode of operation for specific applications under a relevant set of conditions● Derive “insertion loss”, “return loss”, “gain”, “mismatch”, conversion coefficients
● S-functions enable system-level interpretation of behaviour of the component● Power- dependent Low – pass filtering, power conversions, …● Ideal for dividers, multipliers and mixers
● S-functions enable design in conjunction with other circuits● When the signals are limited to the relevant set of conditions
● S-functions can be extracted for the designed circuit
● The S-functions can be measured for the manufactured circuit and can be compared
DESIGN
TEST in Manufacturing
S-functions close the characterization, design and test loop
© 2011 13
S-Functions, the “S-parameters” for nonlinear applications?
● S-Functions, the behavioural model for nonlinear applications
● Deal with a subset of nonlinear RF and microwave phenomena in a uniform way as a natural extension of S-parameters
● Will not solve “all” nonlinear problems
● Can be “measured”
● Can be used for design in simulators
● Can be used for test to compare with realizations in simulator
LinearApplications
NonLinear (*)Applications
AllOther
Applications
(*): Nonlinear behaviour determined by a small number (e.g. 2) of tones
S-parametersS-parameters
S-functionsS-functions
How to define the application boundary?
© 2011 14
S-Functions – Key Benefits
● Simplify the use of HF components and circuits● Complement limited data sheets with more complete system-level models ● Complement evaluation boards, enabling upfront more realistic simulations
● Improve and speed up the design and test process● Adequate replacement when classic models fail● Simulate with a behavioural model, optimized for your design problem● Same Look and Feel as S-parameters: measure, model, verify and simulate● Verify the realized circuit with S-functions against the simulation during test
● Shorter time to market for component manufacturers and buyers
S-Functions are for nonlinear applications ...... what S-parameters are for linear applications
© 2011 15
From S-parameters to S-functions
S-parameters measured at different DC bias points
S-parameters measured at fixed DC bias point
ff
f
S f
I DC V DC
S V DC ; f Linear
Nonlinear
VDC
Remark: for the sake of intuitive explanation, mathematics is not 100% correct
IDC
Keep signal small to stay in a linear mode of operation
© 2011 16
From S-parameters to S-functions
Nonlinear
Nonlinear
f0
f0
f0
3f0
2f0
VDC
Bm n f 0=F mnV DC , f 0 ,∣a1 f 0∣
A1 f 0A1 f 0B2 k f 0
50
f0 3f
02f
0
B1k f 0
Simple model and “easy” to measure
I DC=H V DC , f 0 ,∣a1 f 0∣
A2=0
k : 1... 3 ...
k : 1... 3 ...
© 2011 17
From S-parameters to S-functions
Bm n f 0=F mnV DC , f 0 ,∣a1 f 0∣
Simple model and “easy” to measure
I DC=H V DC , f 0 ,∣a1 f 0∣
But not useful in the real world
● AM-AM● AM-PM● Harmonic Distortion
● S-functions should be able to predict cascades
● “Easy” to measure .... not in reality
Input contains harmonics !!
● Harmonic distortion of source● Imperfect match at input and output
f0 3f
02f
0A1k f 0
A2l f 0
© 2011 18
From S-parameters to S-functions
f0
f0f
03f
02f
0
VDC
Bm n f 0=F mnV DC , f 0 ,∣a1 f 0∣
A1k f 0 B2 k f 0
Z Lf0 3f
02f
0
B1k f 0
“Simple” model extension
I DC=H V DC , f 0 ,∣a1 f 0∣
3f0
2f0
A2k f 0
f0
3f0
2f0
Bm n f 0=F mnV DC , f 0 ,∣a i j f 0∣,all phase comb of ai j f 0
I DC=H V DC , f 0 ,∣a i j f 0∣,all phase comb of ai j f 0
k : 1... 3 ...
© 2011 19
From S-parameters to S-functions
Bm n f 0=F mnV DC , f 0 ,∣a i j f 0∣,all phase comb of ai j f 0
I DC=H V DC , f 0 ,∣a i j f 0∣,all phase comb of ai j f 0
Huge number of combinations with sweeps in amplitude and phase
© 2011 20
From S-parameters to S-functions
What now ???
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
3f0
2f0
A2k f 0f0
3f0
2f0
© 2011 21
From S-parameters to S-functions
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
3f0
2f0
A2k f 0f0
3f0
2f0
In many cases : A1k f 0 , A2k f 0with k1 SMALL
Linearize equations in A1k f 0 , A2k f 0with k1
© 2011 22
From S-parameters to S-functions
f0
f0
f0
3f0
2f0
VDC
A1 f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0 A2 f 0f0
The intuitive approach
© 2011 23
From S-parameters to S-functions
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
2f0
A2 f 0f0
© 2011 24
From S-parameters to S-functions
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
2f0
A2 f 0f0
x2
x2
x2
LINEARBut with frequency conversion, like a mixer
© 2011 25
From S-parameters to S-functions
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
2f0
A2 f 0f0
3f0
LINEAR Superposition
© 2011 26
From S-parameters to S-functions
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
2f0
A2k f 0f0
2f0
3f0
© 2011 27
From S-parameters to S-functions
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
2f0
A2k f 0f0
3f0
2f0
3f0
© 2011 28
From S-parameters to S-functions
Bm n f 0=F mnV DC , f 0 ,∣a i j f 0∣,all phase comb of ai j f 0
I DC=H V DC , f 0 ,∣a i j f 0∣,all phase comb of ai j f 0
Bmn=Sf mn01 V DC , A11 , A21Sf mnij V DC , A11 , A21 AijSfcmnijV DC , A11 , A21 Aij*
with j1
I DC=Sf 0001V DC , A11 , A21Sf 00ijV DC , A11 , A21 AijSfc00ijV DC , A11 , A21 Aij*
Linearization
with Bmn≡Bmn f 0with Aij≡Ai j f 0
Sf mnij“LSOP”
m: output portn: frequency at output port mi: input portj: frequency at input port i
LSOP: large-signal operating point Sweep in strongly reduced LSOP
The S-functions
“Tickle tone”
The Mathematical Approach
© 2011 29
Sfc ???
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
2f0
A2 f 0f0
© 2011 30
Sfc ???
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
2f0 + df
A2 f 0f0
df
df
© 2011 31
Sfc ???
f0
f0
f0
3f0
2f0
VDC
A1k f 0 B2k f 0
Z Lf0 3f
02f
0
B1k f 0
2f0 + df
A2 f 0f0
df
df
Akl*
© 2011 32
How to extract S-functions?
Bmn=Sf mn01 V DC , A11 , A21Sf mnij V DC , A11 , A21 AijSfcmnijV DC , A11 , A21 Aij*
Select a LSOP and keep it constant
constant constant constant
Change the tickle tones
Measure each time Aij ,Bmn
Solve for the S-functions : Sf mnij LSOP , SfcmnijLSOP
Select a new LSOP and repeat
© 2011 33
Extract S-functions for a real deviceDC
k f0
f0
f0
or
ZL
● Repeat the following for all LSOPs of interest● Select tickle tones
● Large enough to be detectable● Small enough not to violate linearity assumption
● Measure incident and reflected waves for different tickle tones
● Model by solving for all Sf and Sfc
● Resulting into S-functions
Large-SignalSource
TicklingSource
Bias
Large-SignalSource
DC Bias
TicklingSource
© 2011 34
S-functions for Real Devices with ZVxPlus
Large-SignalSource
TicklingSource
Bias
ZVxPlus
© 2011 35
Extract S-functions for a simulated device
Large-SignalSource
TicklingSource
Bias Bias
Bias Settings Large-Signal Source Settings
Tickling Source Settings
© 2011 36
Assumptions of S-functions
DUTa1
b1
a2
b2
Is causing only a LINEAR perturbation on the NONINEAR behaviour
a1k f 0 , a2l f 0with l , k≠0,1
v3 i3
`
VDC
a1 f 0 , a2 f 0and vdcLarge-Signal Operating Point (LSOP) Tickle or probing tones
a1k f 0 , a2l f 0with l , k≠0,1
© 2011 37
The crucial question for S-functions
LinearApplications
SomeNonLinear
Applications
AllOther
Applications
S-parametersS-parameters
S-functionsS-functions
Mathematically well-defined To what applications does it apply?
a1k f 0 , a2l f 0with l , k1 SMALL
20 dBc down from main tone
BUT
© 2011 38
Applicability of S-functions
DUT Xa1
b1
a2
b2
● Transistors● Amplifiers● Dividers● Multipliers
Components Prediction● Harmonic distortion● AM – AM and AM – PM● Source-pull● Load-pull● Modulation behaviour (*)● Intermodulation
(*): The component is assumed to be pseudo-static
DUT Ya3
b3
© 2011 39
S-functions in ICE(*)
● Sweepable Large-Signal Operating Point (LSOP)● Auto or user-defined tickle signal level● From simple push-the-button solution to access to expert-level details● Visualization of component behaviour during data collection● Easy model verification (no EDA tool required)● Sanity checks included● Easy export to and integration in Agilent™ ADS and AWR™ MWO
● Support for mismatched environments● Harmonics generated by RF sources don't cause any problem● Simple output prediction does not require EDA tool● Export to and integration in other EDA tools on request● Possible to extend the LSOP variables, e.g. temperature
(*) Integrated Component Characterisation Environment
© 2011 40
Confidence in S-functions
● Constantness of LSOP● All Sf, and Sfc are assumed to be extracted at fixed LSOP
● e.g. variation in DC drain voltage due to changing current violates this assumption
● Interpolation capability of all Sf, and Sfc● LSOP interleaving verification measurements
● Linearity assumption of tickle tones● Model verification for different amplitude and phases of tickle tones
Measure ExtractS-functions
Confidencethrough
VerificationSimulate
© 2011 41
Confidence in S-functions through Verification
ADSMWO
ADS: Agilent Technologies Advanced Design Systems design softwareMWO: AWR Corporation's Microwave Office design software
© 2011 42
S-functions for Real and Simulated Components / Circuits
Data CollectionMeasurements
on Real Devicesusing ICE (*)
SimulationsOn Virtual Devices
in Simulation Tool (ADS - MWO)
S-functions Deployment Simulators(ADS - MWO)
S-functions
S-functions Verifications
Extraction
© 2011 43
S-functions Verification – Constantness of LSOP
Select LSOP variable
Filter for a LSOP variableand value
Variation on fixed input power
Variation ondrain bias voltage
© 2011 44
S-functions Verification – Interpolation Capability
verify interpolation of b2 using independent set of measurements
© 2011 45
S-functions Verification – Linearity Assumption of Tickle TonesDC
k f0
f0
f0
or
ZL
Large-SignalSource
TicklingSource
Bias
DC Bias
Large-Signal
Small-Signalfor harmonics
Switching Amplifier design
DC Bias a2k f 0
Lk f 0 L2 f 0 L3 f 0
a22 f 0 Still small signal?a23 f 0
© 2011 46
ICEBreaker – Option S-function Verification Tool
ICEBreakerDataset
● Measured Data
● Realistic Sweep Plan
● Under multi-harmonic Load-Pull
PredictedICEBreakerDataset
CompareDatasets
● Using S-function ● Derived Quantities
● Incident / Reflected Waves
● Voltage and Current
● Absolute Error
● Relative Error
© 2011 47
Generation of “S-function Predicted Dataset” in ICEBreaker
GenerateS-function basedDataset
CompareDatasetandS-function basedDataset
© 2011 48
Absolute Comparisons with S-function Predictions
Quantity forwhich to comparemeasurement andprediction
Measurements
S-functionPrediction
Absolute Error
● Derived quantities➢ Idc_out➢ Gain➢ Pdel_in➢ Pdel_out➢ PAE➢ ..➢ Frequency selection
● Basic quantities➢ Incident waves➢ Reflected waves➢ Voltages / Currents➢ Frequency selection
Idc_out
© 2011 49
Relative Comparisons with S-function Predictions
b_out(3f0)
● Versus➢ Harmonic index➢ Harmonic refl
Relative Error (dB)
50© 2009 - NMDG NV© 2011
Case Study(*): EPA120B-100P
EPA120B-100P• high efficiency heterojunction power FET• power output: + 29.0dBm typ.• power gain: 11.5dB typ. @ 12 GHz
Real Device Virtual Device
(*): all results in this slide set are based on S-function extraction and deployment for this device
© 2011 51
Data Collection with ZVxPlus
LSOPsweep
detailedfeedbackof LSOPfor actual
measurement
“tickle”settings
detailedfeedbackon ticklefor actual
measurement
© 2011 52
Expert Details If Desired @ Data Collection
Observewhat happens
at the DUT
MonitorRF and DC
sourcesettings
Summary
© 2011 53
S-functions Extraction
S11 S
12
S21
S22
~3 dB compression
meaningfulcomplex
conjugate
© 2011 54
S-functions Verifications – Residual Error
amplitude of complex error for measured and predicted b2 using extraction data
zoom inon result
Number of measurementsrequired to extractS-functions
zoom inontickling
© 2011 55
S-functions Verification – Interpolation Capability
verify interpolation of b2 using independent set of measurements
© 2011 56
S-functions Verifications – Constantness LSOP
Select LSOP variable
Filter for a LSOP variableand value
Variation on fixed input power
Variation ondrain bias voltage
© 2011 57
S-functions in ADS
Acknowledgement:With the support from Agilent Technologies providing ADS licensing
© 2011 58
S-functions Useage in Agilent ADS
EPAClassAMediumPower.aelEPAClassAMediumPower.dsn
Set of equations using FDD
Values of all Sf, Sfc
© 2011 59
S-functions Verification in ADS - Schematic
● Example: Harmonic Balance simulation with measured a1 and a2 spectra● Excitation: Sweeping through a subset of LSOP points + tickle tones
S-function to be verified
Measurements for model verification
Measured incident waves
Access to measured datausing DAC
Sweeping through subsetof LSOP and tickle tones
© 2011 60
S-functions Verification in ADS - Frequency Domain
Frequency = 2 GHz, VDC1= -1.3 V, VDC2= +2.0 V
circles – measurementssolid lines - simulations
Measurements at different input powers than those
which were used for S-functions model extraction!
© 2011 61
S-functions Verification in ADS - Time Domain
Frequency = 2 GHz, VDC1= -1.3 V, VDC2= +2.0 V, Pa1 = +10.0 dBm circles – measurementssolid lines - simulations
Pinch-off
Saturation
© 2011 62
S-functions in ADS – Modulation Prediction - Schematic
Frequency = 2 GHz, VDC1= -1.37 V, VDC2= +4.0 V, Pa1 = +0.0 dBm – Class C
© 2011 63
S-functions in ADS – Modulation Prediction - Display
Frequency = 2 GHz, VDC1= -1.37 V, VDC2= +4.0 V, Pa1 = +0.0 dBm – Class C
© 2011 64
S-functions in ADS – Source-Pull - Schematic
Frequency = 2 GHz, VDC1= -1.37 V, VDC2= +4.0 V, Pav = +1.0 dBm – Class C
Reflection : -0.27
© 2011 65
S-functions in ADS – Source-Pull - Schematic
Frequency = 2 GHz, VDC1= -1.37 V, VDC2= +4.0 V, Pav = +1.0 dBm – Class C
Measured Input Impedance
Complex Conjugate
© 2011 66
S-functions in MWO
Acknowledgement:With the support from AWR providing MWO / VSS licensing
© 2011 67
S-functions Usage in AWR MWO
DCRFRF&DC
1 2
3
BIASTEEID=X2
DCRF RF&DC
12
3
BIASTEEID=X1
DCVSID=V1V=-1.8 V
DCVSID=V2V=6 V
1
2
SUBCKTID=S1NET="SFUNC_Model"
PORTP=2Z=50 Ohm
PORT_PS1P=1Z=50 OhmPStart=PinMin dBmPStop=PinMax dBmPStep=PinStep dB
..
..1.16226472890446E-16,-1.35308431126191E-16-3.15025783237388E-15,4.72191730160887E-159.71445146547012E-17,-2.37310171513627E-151.51267887105178E-15,1.07899800205757E-15-2.98198965520413E-15,1.59594559789866E-15-5.759281940243E-16,-1.97758476261356E-16-1.83880688453542E-15,1.92901250528621E-15-5.06539254985228E-16,2.94209101525666E-15-2.50494069931051E-15,-6.73072708679001E-16-8.60422844084496E-16,2.65412691824451E-16-2.019218126037E-15,2.7373936450914E-15-2.28289609438548E-15,1.70870262383715E-151.08246744900953E-15,-6.78276879106932E-16-1.02955838299224E-15,-1.31578775652841E-155.45570533194706E-16,3.99333344169861E-15-3.62904151174348E-15,-1.74860126378462E-15-2.00100352953925E-15,-5.68989300120393E-162.14975606760426E-15,-5.53376788836601E-16-1.16226472890446E-15,-2.44942954807925E-152.08166817117217E-16,2.4980018054066E-151.04372118124342E-05,-1.36061371223614E-052.85882428840978E-15,3.11556336285435E-15-2.15105711021124E-16,1.37390099297363E-159.71445146547012E-16,9.95731275210687E-16-1.69309011255336E-15,2.33146835171283E-154.27435864480685E-15,3.3584246494911E-15-1.08246744900953E-15,-8.60422844084496E-16…
2D and 3D package data
Model data
MDF file
© 2011 68
S-functions Verification in MWO - Frequency Domain
DCVSID=V1V=DC2val V
DCRF RF&DC
12
3
BIAST EEID=X2
DCVSID=V2V=DC 1val V
3:Bias
1 2
HBT UNER2ID=X1Mag1=0Ang1=0 DegMag2=0Ang2=0 DegMag3=0Ang3=0 DegFo=2 GHzZo=50 Ohm
1
2
SUBCKTID=S1NET ="EPA_120_B"
PORTP=2Z=50 Ohm
PORT_PS1P=1Z=50 OhmPStart=-20 dBmPStop=8 dBmPStep=1 dB
-20 -15 -10 -5 0 5 10Power (dBm)
Gain and Phase with swept Pin
-50
0
50
100
15017
17.518
18.519
19.520
DB(|LSSnm(PORT_2,PORT_1,1,1)|)[1,X]Swept Power.AP_HB
Ang(LSSnm(PORT_2,PORT_1,2,1))[1,X] (Deg)Swept Power.AP_HB
-20 -15 -10 -5 0 5 10Power (dBm)
Po with swept Pin
-80
-60
-40
-20
0
20
40
DB(|Pcomp(PORT_2,1)|)[1,X] (dBm)Swept Power.AP_HB
DB(|Pcomp(PORT_2,2)|)[1,X] (dBm)Swept Power.AP_HB
DB(|Pcomp(PORT_2,3)|)[1,X] (dBm)Swept Power.AP_HB
F0
2F0
3F0
© 2011 69
S-functions Verification in MWO - Time Domain
DCVSID=V1V=DC2val V
DCRF RF&DC
12
3
BIASTEEID=X2
DCVSID=V2V=DC1val V
3:Bias
1 2
HBTUNER2ID=X1Mag1=0Ang1=0 DegMag2=0Ang2=0 DegMag3=0Ang3=0 DegFo=2 GHzZo=50 Ohm
I_METERID=AMP1
V_METERID=VM1
1
2
SUBCKTID=S1NET="EPA_120_B"
PORTP=2Z=50 Ohm
PORT_PS1P=1Z=50 OhmPStart=-20 dBmPStop=8 dBmPStep=1 dB
0 0.2 0.4 0.6 0.8 1Time (ns)
IV
0
5
10
150
50
100
150
200
250
Vtime(V_METER.VM1,1)[*,T] (V)Waveform Tests.AP_HB
Itime(I_METER.AMP1,1)[*,T] (mA)Waveform Tests.AP_HB
-20 -10 0 8Power (dBm)
Harmonics
-80
-60
-40
-20
0
20
40
DB(|Pcomp(PORT_2,1)|)[1,X] (dBm)Waveform Tests.AP_HB
DB(|Pcomp(PORT_2,2)| )[1,X] (dBm)Waveform Tests.AP_HB
DB(|Pcomp(PORT_2,3)|)[1,X] (dBm)Waveform Tests.AP_HB
© 2011 70
S-functions in MWO – Modulation Prediction - Schematic
TPID=RX Cons tellation
QAM_SRCID=A1MOD=16-QAM (Gray)OUT LVL=-0.2OLVLTYP=Avg. Power (dBm)RAT E=_DRATECTRFRQ=2 GHzPLSTYP=Root Raised CosineALPHA=0.35PLSLN=
R D
IQ
1 2
3
45
QAM_RXID=A2
BER
BERID=5VARNAME="PBASE"VALUES=stepped(-76,-40,2)OUT FL=""
AWGNID=A3PWR=-170PWRTYP=Avg. Po wer, Symbol (dBW)LOSS=0 dB
SRC MEAS
VSAID=M1VARNA ME=""VALUE S=0NAVG=
NL_ SID=S 1NET ="AMAM AMPM.AP_HB"SIMTYP=Harmonic BalanceNOI SE=RF Budget onlyRFIFRQ=
TPID=AMP In
TPID=AMP Out
PBASE = -76
1 6 Q A M ( G r a y ) S y s t e m
1 6 Q A M S o u r c e
V e c t o rS i g n a l
C i r c u i tB a s e d A m p l i f i e r
A n a l y z e r
C h a n n e l N o i s e
G e n e r a l R e c e i v e r
B E R D e t e c t o r
S w e p t v a r i a b l e
1.92 1.94 1.96 1.98 2 2.02 2.04 2.06 2.08Frequency (GHz)
ACPR
-150
-100
-50
0
50
DB(PWR_SPEC(TP.AMP Out,1000,0,10,0,-1,0,-1,1,0,4,0,1,0)) (dBm)16QAM System
DB(PWR_SPEC(TP.AMP In,1000,0,10,0,-1,0,-1,1,0,4,0,1,0)) (dBm)16QAM System
DCRF RF&DC
12
3
BIASTEEID=X1 3:Bias
1 2
HBTUNER2ID=DCBlock2Mag1=0Ang1=0 DegMag2=0Ang2=0 DegMag3=0Ang3=0 DegFo=2000 GHzZo=50 Ohm
ISOL8RID=U1R=50 OhmLOSS=0 dBISOL=30 dB
DCVSID=V1V=DC1val V
DCVSID=V3V=DC2val V
1
2
SUBCKTID=S1NET="EPA_120_B"
PORT_PS1P=1Z=50 OhmPStart=-20 dBmPStop=8 dBmPStep=0.5 dB
PORTP=2Z=50 Ohm
© 2011 71
S-functions in MWO – Load-Pull
DCRF RF&DC
12
3BIASTEEID=X1
DCVSID=V1V=-0.6 V
DCVSID=V2V=7 V
3:Bias
1 2
HBTUNER2ID=DCBlock2Mag1=0.8Ang1=40 DegMag2=0Ang2=0 DegMag3=0Ang3=0 DegFo=2 GHzZo=50 Ohm
1
2
SUBCKTID=S1NET="SFUNC_Model"
PORTP=2Z=50 Ohm
PORT1P=1Z=50 OhmPwr=10 dBm
Load Tuner (and bias)
0 1.0
1.0
-1.0
10.0
1 0. 0
-10.0
5.0
5 .0
-5.0
2.0
2 .0
-2.0
3.0
3 .0
-3.0
4.0
4 .0
-4.0
0.2
0.2
- 0.2
0.4
0.4
- 0. 4
0.6
0.6
-0.
6
0.8
0.8
-0.
8
LP_Data_High_PowerSwp Max
25.93
Swp Min21.93
p11
p10p9 p8 p7 p6 p5p4
p3p2
p1
p1: Pcomp_PORT_2_1_M_DB = 21.93
p2: Pcomp_PORT_2_1_M_DB = 22.33
p3: Pcomp_PORT_2_1_M_DB = 22.73
p4: Pcomp_PORT_2_1_M_DB = 23.13
p5: Pcomp_PORT_2_1_M_DB = 23.53
p6: Pcomp_PORT_2_1_M_DB = 23.93
p7: Pcomp_PORT_2_1_M_DB = 24.33
p8: Pcomp_PORT_2_1_M_DB = 24.73
p9: Pcomp_PORT_2_1_M_DB = 25.13
p10: Pcomp_PORT_2_1_M_DB = 25.53
p11: Pcomp_PORT_2_1_M_DB = 25.93
0 1.0
1.0
-1.0
10.0
1 0 . 0
-10.0
5.0
5 . 0
-5.0
2.0
2 .0
-2.0
3.0
3 .0
-3.0
4.0
4 .0
-4.0
0.2
0.2
- 0 .2
0.4
0.4
- 0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
LP_Data_Low_PowerSwp Max
-0.89
Swp Min-2.87
p10
p9
p8p7
p6
p5
p4
p3
p2
p1
p1: Pcomp_PORT_2_1_M_DB = -2.87
p2: Pcomp_PORT_2_1_M_DB = -2.65
p3: Pcomp_PORT_2_1_M_DB = -2.43
p4: Pcomp_PORT_2_1_M_DB = -2.21
p5: Pcomp_PORT_2_1_M_DB = -1.99
p6: Pcomp_PORT_2_1_M_DB = -1.77
p7: Pcomp_PORT_2_1_M_DB = -1.55
p8: Pcomp_PORT_2_1_M_DB = -1.33
p9: Pcomp_PORT_2_1_M_DB = -1.11
p10: Pcomp_PORT_2_1_M_DB = -0.89
© 2011 72
S-functions Strengths
● S-functions are completely public
● S-functions are transparent
● S-functions are connected into ADS and MWO and can be connected in other tools on request, e.g. Matlab
● S-functions are closely integrated with load-pull in general and especially with tuners from Focus Microwave
● S-functions extraction tool has a verification capability for LSOP constantness and interpolation capability, investigating quality of model, without needing a simulation tool
● The source- and load-pull software ICEBreaker from NMDG allows S-function verification, related to the linearity assumption
● Customers can explore the capabilities of S-functions via NMDG services
© 2011 73
S-Functions - Key Capabilities
● Natural extension of S-parameters● Reduce to S-parameters for small-signal excitation● S-parameters are cascadeable, S-Functions are cascadeable too● e.g. Transistors, amplifiers, dividers, multipliers
● Predict harmonic behaviour of components under different impedances● Source – Pull● Load – Pull● Harmonic distortion, Waveforms
● Predict modulation behaviour of components under different impedances● When no long-term memory effects
● Valid for multi-ports, applicable to differential components
© 2011 74
References
● F. Verbeyst and M. Vanden Bossche, “VIOMAP, the S-parameter equivalent for weakly nonlinear RF and microwave devices”, published in the Microwave Symposium Digest of IEEE 1994 MTT-S International and published in the 1994 Special Symposium Issue of the MTT Transactions, vol. 42, no. 12, pp. 2531 – 2535.
● F. Verbeyst and M. Vanden Bossche, “VIOMAP, 16QAM and Spectral Regrowth: Enhanced Prediction and Predistortion based on Two-Tone Black-Box Model Extraction”, published in the Proceedings of the 45th ARFTG Conference, Orlando, June 1995 and winner of the “Best Conference Paper Award”.
● J. Verspecht and P. Van Esch, “Accurately characterizating of hard nonlinear behaviour of microwave components by the Nonlinear Network Measurement System: introducing the nonlinear scattering function,” Proc. International Workshop on Integrated Nonlinear Microwave and Millimiterwave Circuits (INMMiC), October 1998, pp.17-26.
● J. Verspecht, “Scattering functions for nonlinear behavioral modeling in the frequency domain,” IEEE MTT-S Int. Microwave Symp. Workshop, June 2003.
● J. Verspecht and D.E. Root “Polyharmonic Distortion Modeling,” IEEE Microwave Magazine, vol.7 no.3, June 2006, pp.44-57.
● D.E. Root, J. Horn, L. Betts, C. Gillease, and J. Verspecht, ”X-Parameters: The new paradigm for measurement, modeling, and design of nonlinear RF and microwave components,” Microwave Engineering Europe, December 2008, pp. 16-21.
© 2011 75
Conclusion
● S-functions are a natural extension to S-parameters for nonlinear behaviour
● S-functions aren't much more complex than S-parameters
● S-functions are accurate when assumptions are not violated● Linearity assumption
● S-function extraction is supported on R&S network analysers
● S-functions can be coupled into ADS and MWO
● S-functions can be used to compress or hide specifics of nonlinear circuits in ADS and MWO
For more information [email protected]
www.nmdg.be
© 2011 76
Explore the power of S-functions
Send your device or circuit to NMDG ...
… and NMDG sends you the S-functions`
Please contact NMDG at [email protected]