IMAPS Conference VI/VI-2.pdf · CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012....

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October 2011

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IMAPS ConferenceLa Rochelle, Feb 2, 2012

Enabling High Power Density

through Higher Temperature Gate-Drivers in

New Generation of SiC/ GaN Power Modules

Jean-Christophe DoucetVP Marketing & Business Development

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The Company

• CISSOID is the Leader in Semiconductor solutions dedicated to

Extreme Temperatures & High Reliability

• CISSOID products operate reliably and are guaranteed

– From -55°C to +225°C for HT family

– From -55°C to +175°C for MT family

CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012

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Differentiator

70°C

158°F

-200°C

-328°F

400°C752°F

0°C

32°F

Commercial standards

85°C

185°F

Industrial standards

-40°C

-40°F

CISSOID products

-55°C

-67°F

225°C437°F

125°C

257°F

Military standards

Cissoid products operate reliably in an

• Cissoid products have guaranteed specification from -55°C to +225°C

• Extreme tests by NASA demonstrated reliable operation from -195°C to +400°C

Extended Range of Temperature


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Markets


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Products offering

Power Supply

Switched-Mode Voltage Regulators, PoL & ICs for

DC-DC Converters

Turnkey DC-DC Converters Ref DesignsLinear Voltage Regulators

VOLCANOVOLCANOSTAR

ETNA Module

VESUVIO® & EREBUS®

STROMBOLI®MAGMA

(PWM Controller)POLARIS

(BG3M - 3mA)HELIOS (1A) HYPERION

Signal Conditioning, General Purpose & Discrete

Mixed Signal-AMAZON (ADC)-NILE (Comparator)

-POLARIS (Voltage

Ref)

Clock & Timer-Clock Gen.-555

Amplifiers- TURQUOISE- RUBY

Telemetry & RFID

- MERLIN: Battery-less, wireless Telemetry

Logic Gates- 74XX compatible

Transistors & Switches

RIVER PULSAR GALAXY WIZARDGEMSTONEPLANET

Power Conversion

Half & Full Bridge Drivers Solutions for Power Drivers & Modules

TITAN TITAN

PALLAS HYPERION EVK-RHEAEVK-THEMIS-ATLAS EVK-HADES®


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Power Converters:

Market Needs & Design Goals


Reduce

Size &

Weight

Increase

Reliability

& Lifetime

Increase

Efficiency

• Electrical actuators; fluid pumps…

• Multi 100’skW MW Power converters

• Motor drives: Industrial; Elevators; AC…

• EV / HEV: Motor drives; battery chargers; boost converters; auxiliary HVDC 12V converters…

• Solar inverters; wind turbine power converters

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SiC & GaN: Disruptive technology for

Power Modules But Creating New Challenges


Reduce

Size &

Weight

Use of

Wide-

Bandgap

Power

Switches:

SiC / GaN

Increase the power

density

Increase switching

Frequency ( smaller

passives & magnetic)

Increase

Reliability

& Lifetime

Increase the operating

temperature and

reduce the cooling

Increase

Efficiency

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Why SiC / GaN?

• Wide-bandgap power switches - SiC, GaN - are poised to displace IGBT and Si switches in power converters:– They offer much lower dynamic losses

– As a result, they can be switched at much higher frequency

– Their power density is much greater than silicon devices

– They can operate at much higher junction temperatures

• A number of SiC devices begin to be available: – MOSFETs: CREE; RHOM

– Normally On JFETs: SemiSouth; Infineon (announced)

– BJTs: Fairchild (Transic); Genesic

– Normally Off JFETs: SemiSouth

• GaN look promising for voltages <1200V


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SiC & GaN: Disruptive technology for

Power Modules But Creating New Challenges


Reduce

Size &

Weight

Increase the power

density

Increase switching

Frequency ( smaller

passives & magnetic)

Increase

Reliability

& Lifetime

Increase the operating

temperature and

reduce the cooling

Requires the Gate Drive

circuitry to be placed as

close as possible to the

power switches to reduce

parasitic inductancesIncrease

Efficiency Traditional silicon ICs do

not operate reliably above

125°C

The need / trend to run at higher frequency, with higher reliability and to reduce the cooling taking advantage of the high-temperature capability of the SiC / GaN are not

achievable because of the limitation of the silicon gate-drive circuitry.

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The Challenge

• How to drive these new SiC / GaN switches and take full advantage of their capabilities?– The gate driver must support high-frequency switching and very fast

transition times

– This results in the need to reduce the parasitic inductances

– Which results in the need to place the gate drive IC close to the power switch ideally within the Power Module

– But in the meantime, we want to increase the junction temperature of the power switch to reduce the cooling and reduce the size / weight !!

– And we also want to increase the reliability & lifetime of the system !! (e.g. RNE and aerospace applications now have requirements for 25/30 years lifetime for the power converters)


CISSOID has developed a dedicated solution based on its high temperature / high reliability silicon technology. A new gate driver called HADES®

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HADES®

Typical Application:

3-Phase Motor Drive

High-SidePower Device

Control

High-Voltage DC bus (e.g. 600VDC)

Low-SidePower Device

Half-Bridge (HB1) HB2 HB3

HADESIsolated Gate Driver & isolated power supply

Fault

Hot Area (MCM or PCB implementation)

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(sp

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d, p

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tio

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orq

ue

)

DCisolation

HADES allows dramatic

reduction of parasitic

inductances as the THEMIS-

ATLAS dice can be placed right next to the SiC

switch dice

Fault

Control


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HADES®

Original Requirements

• Use of CISSOID CHT technology: -55°C to +225°rating [junction ] needed:

– for high-temperature environments (200°C and above)

– to sustain self-heating in high-power-density converters

– for long-term reliability when used in “low temperatures” (e.g. 100/125°C)

• 600V / 1200V DC bus voltage support

• Gate-current: 4A minimum, up to 20A

• Fast switching times

• Switching frequency: 100kHz and beyond (possibly 1MHz for GaN-based converters)

• Isolation of data : Magnetic-based (non-opto) for high-temperature reliability

• Isolated power supply – (ideally 2 instances for each high &low when using nONJFET switches)

• High common mode transient immunity: 50kV/µs

• Specific functions: Active Miller Clamping (AMC); Desat Detection; UVLO

• High integration level for compact MCM implementations of a 3-Phase motor drive

• Cost effective solution CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012

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HADES®

: Demo Board & Test Vehicle


Demonstration board EVK-HADES:

Suitable for immediate testing at 175°C / 225°C

Availability:

Cree MOSFETs : Dec 2012

SemiSouth nON JFETs: Q2 2012

Fairchild / Transic BJT: Contact CISSOID

HADES Chipset:

Suitable for MCM & Power Module integration

Available in die form

Availability: Sampling & pre-series: Dec 2011

Production: Q2 2012

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AMC

HADES®

Block Diagram


Power Supply (Isolated)

HS Driver (2x2A)

LS Driver (2x2A)

Po

wer

Sw

itch

es

(HS

+ L

S)

Isolated Data Transmit

Isolated Data Transmit

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CHT-THEMIS-ATLAS:

The Gate Driver Function Blocks

2,375

2,400

2,425

2,450

2,475

2,500

2,525

2,550

2,575

2,600

2,625

-100 0 100 200 300

DE

SA

T T

hre

sh

lod

[V

]

Ambient Temperature [°C]

2%

DESAT Threshold Voltage versus Ta

Desaturaton Detection:


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CHT-THEMIS-ATLAS:


Under Voltage Lockout :

2,375

2,425

2,475

2,525

2,575

2,625

-100 -50 0 50 100 150 200 250

UV

LO

Th

res

hlo

d [

V]

Ambient Temperature [°C]

High Threshold

Low Threshold

2%

UVLO Threshold Voltage versus Ta


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CHT-THEMIS-ATLAS:


ATLAS Output Characteristics :

On-Resistance versus Temperature

for 1 ATLAS ChannelOutput Current versus Temperature

for 1 ATLAS Channel

0

0,5

1

1,5

2

2,5

-100 0 100 200 300

On

-Re

sis

tan

ce

[O

hm

]

Temperature [°C]

Low State

High State

0

1

2

3

4

-100 0 100 200 300

Ou

tpu

t c

urr

en

ts [

A]

Temperature [°C]

Sink Current

Source Current


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CHT-THEMIS-ATLAS:


Turn On/Off Propagation delays:

Turn On Propagation delay trough

THEMIS and ATLAS vs temperature

(Cload=1nF)

Turn Off Propagation delay trough

THEMIS and ATLAS vs temperature

(Cload=1nF)

0

20

40

60

80

100

-100 0 100 200 300

Tu

rn O

n P

rop

ag

ati

on

dela

y [

ns]

Temperature [°C]

0

20

40

60

80

100

-100 0 100 200 300

Tu

rn O

ff P

rop

ag

ati

on

dela

y [

ns]

Temperature [°C]


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CHT-RHEA Chipset:

The Data Isolation Function Block

Dual Channel - 2 Mbps per channel

Supply voltage: 5V

Delay < 100ns

Jitter (RMS cycle-2-cycle) : <21ns

Modulation frequency: Programmable from 6.5MHz to 20MHz

High common mode transient immunity:

50kV/μs

On-Off Keying modulation

Full programmability (carrier frequency, modulation polarity)

Low power: 43mW/channel

2.5 kV isolation (10 MΩ) with 6mm (0.24”) core transformers (1 per channel)

2.1’’ (53mm)

1.8’’

(45 mm)


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Stromboli®

and CHT-MAGMA:

The Isolated Power Supply Function Block

CHT-MAGMA

GND FB

Vin

(12V ±10%)

SWT

THRESHOLD

COMPPWM

VDD

VDDH

VSSH

NSH

CHT-MOON

CHT-CALLISTO

Discrete

VDDL

VSSL

NSLCHT-CALLISTO

Vin range: +12V ±10%SiC MOSFET: +20V/-5Output voltages: Two outputs options:SiC MOSFET: +20V / -5VSiC Normally-On JFET: 0V/-20V

Output Power: 2W

75% Typ. Efficiency

Isolation: o 2,500VAC @50Hz (for 1mn)o >100MΩ @500VDC

High dV/dt immunity: 50kV/µs

225°C Transformer

Flyback topology

Based on CHT-MAGMA

PWM controller


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EVK-HADES®

: 1-Leg Isolated

Gate Drive Demo Board

High-side and Low-side gate drive

Support of 1200V Switches

4A Peak output current per channel

High common mode transient immunity:

50kV/µs

Operates from a single 12V ±10% supply

Switching frequency capability: >200kHz

Dual (with on-board non-overlapping)/ single

PWM input

Active Miller clamping

Desaturation protection

Fault outputs

Eval Board qualified from -55 to +175°C

(ambient)

200°C Polyimide PCB

Active components all qualified from -55 to

+225°C (Tj)

225°C Transformers

4’’ (100mm)

4’’

(100mm)

2 versions:

Normally-On JFET Support

MOSFET Support


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HADES®

in a 3kW Buck

DC-DC Converter Test Setup

EVK-HADES board mounted in a 600V / 10A, 3kW Buck DC-DC Converter power board using standard temperature SiC MOSFETs

GND

CMF20120D,

CREE

DC

HADES

LS_NG

LS_ND

LS_NS

DC +12V

VDD

PWM

DC power

supply

(600V)

HS_NG

HS_ND

HS_NS

HS_IN

HADES

NGL

NDL

NSL

VDD

NGH

NDH

NSH

VSS

PWML

PWMH

L

C LOAD3kW

750V

50ACMF20120D,

CREE

Test conditions:

Temperature = 25°C / 175°C

(ambient)

PWM signals: 100kHz, 50%

duty cycle

DC bus voltage = 600V

Output voltage = 300V

Output current = 10A

Load resistance = 30Ω

HB_SA_SEL = 5V

Local non-overlap: 400 ns

Passive components:

C=5µF

L=0.9mH

Load = 30Ω, 3kW

Power transistors: CREE

MOSFET CMF20120D

GND

CMF20120D,

CREE

DC

HADES

LS_NG

LS_ND

LS_NS

DC +12V

VDD

PWM

DC power

supply

(600V)

HS_NG

HS_ND

HS_NS

HS_IN

HADES

NGL

NDL

NSL

VDD

NGH

NDH

NSH

VSS

PWML

PWMH

L

C LOAD3kW

750V

50ACMF20120D,

CREE


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HADES®

in a 3kW Buck

DC-DC Converter

DC-DC operation at 100 kHz :


Control Line

PWML

Output Voltage

Inductor current

(2A/Div)

Half-Bridge

Output Voltage

Efficiency:

Switching Frequency

Operating Temperature

(Ambient)Efficiency

150kHz 25°C 94.5%

150kHz 175°C 92.1%

100kHz 25°C 97.0%

100kHz 175°C 94.4%

50kHz 25°C 97.6%

50kHz 175°C 95.2%

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HADES®

in a 3kW Buck

DC-DC Converter

Propagation delay & Switching Times:

PWML Control

- Rising Edge

Half-Bridge

Falling Edge

DC Output

Voltage

Propagation delay: 200ns


Output Fall time: 33ns

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HADES®

in a 3kW Buck

DC-DC Converter

Propagation delay & Switching Times:

PWML Control - Falling Edge

Half-Bridge Rising Edge

DC Output Voltage


Propagation delay: 200ns (+ 400ns non-overlapping)

Output Rise Time: 25.8ns

dV/dt = 23.3kV/µs

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HADES®

in a 3kW Buck

DC-DC Converter

Conclusion:

• HADES® was demonstrated with an ambient temperature of 175°C with standard SiC MOSFET devices

• HADES® enables fast switching of SiC MOSFETs, enabling low switching losses

• Higher performance is expected with MCM integration of Power Module incorporating HADES

Will further reduce the parasitic inductance

Allowing faster switching time,

Allowing higher efficiency,

Allowing higher operating temperature, supporting reduced cooling

and higher-temperature environments


HADES®, the Solution of Choice for High-Performance, High-Power Density Power Modules!

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Jean-Christophe Doucet

VP Marketing & Business

Development

[email protected]

Thank You for your attention !

IMAPS Conference VI/VI-2.pdf · CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012....

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Transcript of IMAPS Conference VI/VI-2.pdf · CISSOID Presentation - IMAPS Conference, La Rochelle, Feb 2, 2012....