Thermal Properties of Active Solder Bonds-IMAPS TATW 2004

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    Initial Results: ThermalInitial Results: Thermal

    Properties of Active SolderProperties of Active SolderBondsBonds

    Randall Redd & Dr. Ronald SmithRandall Redd & Dr. Ronald Smith

    SS--Bond Technologies, LLCBond Technologies, LLCrredd@[email protected]

    S-BondTechnologies, LLC

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    SS--Bond TechnologiesBond Technologies

    Original technology patent in 1996 withinOriginal technology patent in 1996 within

    another companyanother company SBT formed in 2003 to developSBT formed in 2003 to develop

    applications in the electronics, aerospace,applications in the electronics, aerospace,

    defense, and general industrial marketsdefense, and general industrial markets Small team of scientists/engineers thatSmall team of scientists/engineers that

    develop materials and applications, thendevelop materials and applications, thenlicense the technology to OEMlicense the technology to OEMs ands andcontract assembly service providerscontract assembly service providers

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    Study ObjectiveStudy ObjectiveTo examine the relative thermal conductivity ofTo examine the relative thermal conductivity of

    bonded packaging/thermal managementbonded packaging/thermal managementmaterials in a way that provides relativematerials in a way that provides relative

    performance data to compare active solderperformance data to compare active solder

    materials to commonly used conventionalmaterials to commonly used conventionalsolderssolders

    Why?Why?-------- TIM1 and bond lines between materials areTIM1 and bond lines between materials arefrequently the limiting item in high performance thermalfrequently the limiting item in high performance thermal

    management systemsmanagement systems

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    Active Solder ChemistryActive Solder Chemistry Based onBased on

    conventional leadconventional lead--freefreesolder materialssolder materials

    Addition of specificAddition of specific

    elements creates aelements creates aself fluxing systemself fluxing system

    No need to preNo need to pre--plate,plate,

    metallize, ormetallize, oradd/remove fluxadd/remove flux

    Material # 2Material # 1

    S-Bond Alloy

    Ti/Rare Earth IntermetallicsThin oxide layer acting as stabilizer

    Air

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    Study ProcedureStudy Procedure Test apparatusTest apparatus

    follows ASTM Dfollows ASTM D--54705470 Testing done onTesting done on

    substratessubstrates

    approximately 2approximately 2square x 0.125square x 0.125thickthick

    Materials wereMaterials wereconsistent inconsistent in

    thickness within samethickness within samematerial, but notmaterial, but notbetween materialsbetween materials

    H

    Insulator

    Guard Heater

    Insulator

    Heater

    T1UpperMeterBarT2

    Specimen

    T3LowerMeter

    BarT4

    T5Reference

    CalorimeterT6

    Cooling Plate

    Insulator

    FORCE

    H

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    Bonding MethodsBonding Methods Substrates were bonded using 4 materialsSubstrates were bonded using 4 materials

    Indium based Active Solder (SIndium based Active Solder (S--BondBond 130)130)

    Tin/silver based Active Solder (STin/silver based Active Solder (S--BondBond 220)220)

    32.5 tin/67.5 lead conventional solder32.5 tin/67.5 lead conventional solder

    96 tin/4 silver conventional solder96 tin/4 silver conventional solder

    Active solder materials bonded directly to the substrateActive solder materials bonded directly to the substrate

    surfacesurface Other materials bonded using fluxOther materials bonded using flux -------- significantsignificant

    bonding issues with certain substratesbonding issues with certain substrates

    Bond thickness controlled by weight applied to assemblyBond thickness controlled by weight applied to assembly

    prior to coolingprior to cooling No evaluation of bond strengthNo evaluation of bond strength

    Bond quality evaluated by Scanning Acoustic MicroscopyBond quality evaluated by Scanning Acoustic Microscopy

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    Active Solder JoiningActive Solder Joining Substrate material is heated to joiningSubstrate material is heated to joining

    temperaturetemperature Indium based materialIndium based material -- 140140CC

    Tin/Silver based materialTin/Silver based material -- 250250CC

    Surfaces are coated with thin layer of materialSurfaces are coated with thin layer of materialby brushingby brushing

    Additional material added and parts assembledAdditional material added and parts assembled

    Weight is placed on top of assembly duringWeight is placed on top of assembly duringcooling to establish consistent bond thicknesscooling to establish consistent bond thicknessand minimize voidingand minimize voiding

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    Conventional Solder JoiningConventional Solder Joining

    Joined using fluxes recommended forJoined using fluxes recommended for

    particular material, where available, andparticular material, where available, andfollowing recommended practicesfollowing recommended practices

    For certain materials, acceptable bondsFor certain materials, acceptable bondscould not be obtained without plating thecould not be obtained without plating the

    surfacesurface [testing in progress][testing in progress]

    AlSiC with nickelAlSiC with nickel Si with goldSi with gold

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    Test MatrixTest Matrix

    XXCuW

    XXXSi

    XXXXCu

    AlAlSiCCuWSi

    Difficult to achieve bond w ith conventional solders

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    Anticipated ResultsAnticipated Results Bond conductivity isBond conductivity is

    governed by severalgoverned by severalfactors:factors:

    Bulk thermalBulk thermal

    impedance of joiningimpedance of joiningmaterialmaterial

    Bond line thicknessBond line thickness

    Degree of substrateDegree of substrate

    surface wettingsurface wetting

    Void fractionVoid fraction 1.251.25Tin/Silver/Tin/Silver/CopperCopper

    1.221.22Tin/LeadTin/Lead

    1.251.25SB220SB220

    1.001.00SB130SB130

    Relative BulkRelative Bulk

    ThermalThermal

    ImpedanceImpedanceMaterialMaterial

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    Bond Quality EvaluationBond Quality Evaluation

    Scanning Acoustic MicroscopyScanning Acoustic Microscopy

    Si bonded to CuW w / SB220 AlSiC bonded to Cu w/ tin-lead

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    Bond Line ThicknessBond Line Thickness Bond thickness is determined by surface tension,Bond thickness is determined by surface tension,

    melt rheology, assembly process, and surfacemelt rheology, assembly process, and surfaceroughness of substratesroughness of substrates

    Experience shows normal variation of ~1 mill forExperience shows normal variation of ~1 mill for

    a capable processa capable process Difficult to make substantial changes inDifficult to make substantial changes in

    thickness without use of greatly increasedthickness without use of greatly increased

    pressurepressure All bond thickness fell in the range of 1All bond thickness fell in the range of 1--4 mills4 mills

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    Measured Relative ThermalMeasured Relative Thermal

    ImpedanceImpedance

    0

    1

    2

    Si-CuW

    0

    1

    2

    Si-Cu

    0

    1

    2

    AlSiC-Cu

    0

    1

    2

    Al-Cu SB130

    SB220

    Sn/Pb

    Sn/Ag/Cu

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    Initial ConclusionsInitial Conclusions Bulk thermal impedance drives thermalBulk thermal impedance drives thermal

    performance if the bonding material completelyperformance if the bonding material completelywets the substratewets the substrate

    Active Solders wet and join to a wider variety ofActive Solders wet and join to a wider variety of

    materials than conventional solders, producingmaterials than conventional solders, producingequal or lower thermal impedanceequal or lower thermal impedance

    Further study is needed with plated substratesFurther study is needed with plated substrates

    to fully compare conventional solders to activeto fully compare conventional solders to activesolders in silicon, AlSiC, and CuW substratessolders in silicon, AlSiC, and CuW substrates