GLOBALFOUNDRIES Silicon Photonics...

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GLOBALFOUNDRIES Silicon Photonics Platform 25 & 26 October 2018: Japan SOI Design Workshop

Transcript of GLOBALFOUNDRIES Silicon Photonics...

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GLOBALFOUNDRIES Silicon Photonics Platform

25 & 26 October 2018: Japan SOI Design Workshop

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GLOBALFOUNDRIES Silicon Photonics

© 2018 GLOBALFOUNDRIES

Growth Drivers for SiPh Foundry

Photonic Integration Platforms & Roadmaps

90WG Offering (General Availability)

Key Device Overview

Fiber Attach

Photonic Testing

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Markets Driving Growth in Silicon Photonics

© 2018 GLOBALFOUNDRIES 3

Market Segments: Deutsche Bank 2017

Metro Telecom (1550 nm)• 100-1280 km reach• Usually 4x5 MSA• 400 – 800 Gbps

DCI (400ZR) (1550 nm)• < 80 km reach• CFP2• 400 Gbps• 400ZR standard

5G Backhaul / Fronthaul• 1310 /1550 nm wavelength• 2 - 10 km reach• QSFP• 100 Gbps

Optics

Long Haul Telecom• 1550 nm wavelength• 1000+ km reach• Usually 5x7 MSA• 400 Gbps

SR - IDC• 1310 nm wavelength• 150m -2 km• QSFP and QSFP-DD• 100-400 Gbps• Plus active optical cables

Automotive (1310 nm)• LiDAR: Light based radar• AOC: Active optical cables

Fact Access (GPON)• 1310/1490 nm wavelength• 10 km• 10 Gbps• Custom form factors

Chip to Chip Interconnect• 1310 nm• 3-10-500 m reach• IC• 112 Gbps• Backplane and acceleration

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20202018 2019

Silicon Photonics Foundry Technology Roadmap

© 2018 GLOBALFOUNDRIES 4

90WGE

O-Band photonics

Monolithic RF CMOS

25G MZi NRZ/PAM4

Ge epi PD

PSR- poly/SOI

RF passives, ESD

Fiber attach SMF

45WG

Hybrid O/C band

50G Mzi Ge epi PD

SiN WG, PSR

mmWave passives

Freeform design

Passive/active SMF

Cu pillar/C4

45WGL

45WG O/C band +

Monolithic RF CMOS

50G MRR PAM4

SiN AWG athermal

Ge EPI APD

Laser attach

Alt fiber attach

90WGEX

90WGE O-band +

cWDM MUX/DeMUX

LP thermal PS

Freeform design

Passive/active SMF

90WGEL

90WGEX O-band +

35G MZi, Ge epi PD

Ge APD

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dry

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map

• 90WGe: Qualification Complete July 2018, Cadence PDKs model/co-design electro-optics

• 45WG: In development – first components 4Q2019, GA 4Q2020• Technology node migration – higher bandwidth (>50Gbaud), new components

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90WG: Monolithic Electro-Optic Integration

© 2018 GLOBALFOUNDRIES 5

Top grating couplers

CMOS RF TIA, driver, digital logicprecision

resistor, eFuse

MZI modulators Ge EPI PD Waveguides, passives

Thermal phase shiftersstandard & undercut

4x MUX/DeMUXtunable

Edge fiber couple, passive or active align

Polarization splitter & rotator

BEOL passivesinductors, VNcap

Ridge, Rib WGsBends, tapers, Directional couplers, crossWIC, gratings, absorbers

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90WG Si Photonics Technology Process Overview

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• Monolithic integration of 90nm SOI CMOS library with broad photonic device library

• Starting SOI substrate: 2um BOX, 170nm SOI for CMOS and photonic devices

• Ge EPI integration coupled into SOI WG

• 48 mask levels. 40 mask levels with hybrid option (photonics only)

• 7 BEOL levels. 6 Cu, 1 AL.

• Far-BEOL V-groove integration for fiber attach

• L1 Qual, M6 exit 7/31/2018

Ge EPI integration2um BOX

170nm SOI for CMOS and photonic devices

V-groove process integration for passive fiber attach

Standard 7 level BEOL

© 2018 GLOBALFOUNDRIES

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Si Photonics 90WG Design Kit Features

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• Tool and Model Highlights

– Cadence-based design kit

• Co-design of electrical and optical circuits using device building blocks

• Electrical and Optical component pcells and fixed layouts

– MMSIM (Spectre)

• Verilog-A optical compact models

– Calibre DRC/LVS/xRC

– Waveguide path tool

• Waveguide layout tool including bends, tapers, crossings, coupled lines

• Generates schematic & symbol for simulation and extraction

• CAD flow of combined E/O is differentiating in the industry

• Planned PDK release updates

– Beta V1.0: 8/7/2018 All model and layout updates

MZI Modulator

Waveguide bend

Waveguide Path tool

Mode converter

CWDM DeMUX

Wavelength Independent Directional Coupler

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300mm Manufacturing: Silicon Photonic Waveguides

• SOI Rib recess waveguide propagation loss comparison 200mm vs 300mm

• Advanced silicon processing is the path to higher performance photonic interconnect

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300mm200mm

© 2018 GLOBALFOUNDRIES

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90WG SOI Waveguides

O-band SM WG 350nm wide

Ave 2.2 dB/cm

O-band MM WG 810m wide

Ave 0.8dB/cm

• Inline test automation enables wafer level statistics

– Provides insight into further process optimization

– High volume manufacturing and monitoring

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50G Epi Ge P-i-n Photodetector

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Ge epi w/i 90nm CMOS thermal budget

Ge

Si

• Selective epitaxial Ge PIN PD

– Integrated with CMOS thermal processing

– BW > 39 GHz

– Responsivity ~1.0 A/W TE

– Ioff < 40nA

– Targeted for 56-64 Gbaud RX

© 2018 GLOBALFOUNDRIES

TE and TM responsivity at -1V, 0.7 um intrinsic W

TE 0.97 A/W, TM 0.89 A/W, PDL 0.09 (means)

Dark current 30nA (mean)

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25G Si PN-depletion MZ Modulator

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Vpi*L ave 1.54

BW vs Vpp30Ghz E/O bandwidth @ 2.5Vpp

25Gb/s Large-signal Eye Diagram

Travelling wave MZM

1.9Vpp, -1VDC, 4.4dB ER

• Alpha 6 PDK hierarchical design

– Wavelength independent 3dB couplers

– Thermal phase shifters, 1V or 3V

– Fully loaded, pcell variable length1-3mm

– 30ohm termination default or custom

– 27 Ghz BW @ 2 Vpp

– Insertion loss 2.5 - 3.5 dB

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• Design Attributes

– Flat top, 13nm channel width, 20nm spacing

– Cascaded MZI using 3 stage and 2 stage filtering

– Tunable design using efficient undercut heaters <4mW / Pi shift, 7-10X more efficient vs non-undercut

– Bandgap diode for temp monitor

– Tuning protocol & look-up table to center channels on band, accounting for process variability and ambient temperature

– Can improve Min IL ~0.5-1 dB with partial flat top design

13nm Channel +-6.5nm Wavelength range (nm)

1 1264.5 to 1277.5

2 1284.5 to 1297.5

3 1304.5 to 1317.5

4 1324.5 to 1337.5

90WG 4 channel cWDM (MUX / DeMUX)

Non-undercut

Thermal phase shifter

Resistance ~ 450ohm

Ppi ~ 35 mW / pi

Undercut

Thermal phase shifter

Resistance ~ 430ohm

Ppi 2.36 mW / pi

Represents the valid region (13nm channel width, upper bound is IL, lower bound is Xtalk)

Flat top Wide DeMUX Transfer Matrix Model Results Min IL 2.2dB, Max IL 2.7dB, 1dB rolloff BW 14.5nm, Max XT -23dB

© 2018 GLOBALFOUNDRIES

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Far BEOL – Passive Align Edge Fiber Attach

• V-groove etch in handle substrate for passive fiber alignment

• 3 stage spot converter for mode transition between SMF `10um mode and SOI SM waveguide

• Advanced lithography and OPC for optical coupling

• Reduced IL and ORL

© 2018 GLOBALFOUNDRIES

AA BB

Section view AA Section view BB

Fiber attach & mode converter PDK layout

V-groove passive align Low loss undercut mode converter

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• Technology Debug• Semi-automated Test• Two Fiber Test• ABW• CW Tests

• Process Development • Process Monitor• Full Automation• Two Fiber Test • Lensed Fiber Alignment• Polarization Control• CW, DC & PD Leakage • WDL, BW

• Wafer Final Test• Lensed Fiber Alignment • Optical BIST Test • Scan, BIST, DC, AC, • High Volume Test • Single Fiber• Fiber Block Test 2x to 20x

• Circuit or Technology Limitations

• Package Limitations • Adherence to Stds• At Speed Performance• Benchmark Data• MCM Debug• Calibration • EUH Bring Up

MCM MFG Test

• Volume Logic Test • ASIC Compatible • Optical BIST• Custom Handler • Electrical BIST

14© 2018 GLOBALFOUNDRIES

Technology verification Inline optical test Wafer sort test Die or MCM

functional testMCM Mfg test

GF Silicon Photonics Test Capability

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GLOBALFOUNDRIES 300mm SiPh Foundry Summary

• 300mm technology platform with a broad photonic device library and state-of-art PDK

– Leverages 300mm advanced patterning and manufacturing controls

– EO and OE simulation capability

• Leading technology development roadmap

– Supports monolithic integration of photonics and CMOS

• 90WG technology fully qualified (7/31/2018), beta level PDK available (8/7/2018)

– Use as is or in conjunction with custom designs for c-band, o-band or exploratory devices

– Quarterly MPW schedule

• Broad range of photonic test capabilities

– Inline controls, model verification, reliability, and wafer level functional test

15© 2018 GLOBALFOUNDRIES

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The information contained herein [is confidential and] is the property of GLOBALFOUNDRIES and/or its licensors.

This document is for informational purposes only, is current only as of the date of publication and is subject to change by GLOBALFOUNDRIES at any time without notice.

GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. Other product or

service names are for identification purposes only and may be trademarks or service marks of their respective owners.

© GLOBALFOUNDRIES Inc. 2017. Unless otherwise indicated, all rights reserved. Do not copy or redistribute except as expressly permitted by GLOBALFOUNDRIES.

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