GLOBALFOUNDRIES Silicon Photonics...
Transcript of GLOBALFOUNDRIES Silicon Photonics...
GLOBALFOUNDRIES Silicon Photonics Platform
25 & 26 October 2018: Japan SOI Design Workshop
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GLOBALFOUNDRIES Silicon Photonics
© 2018 GLOBALFOUNDRIES
Growth Drivers for SiPh Foundry
Photonic Integration Platforms & Roadmaps
90WG Offering (General Availability)
Key Device Overview
Fiber Attach
Photonic Testing
Markets Driving Growth in Silicon Photonics
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Market Segments: Deutsche Bank 2017
Metro Telecom (1550 nm)• 100-1280 km reach• Usually 4x5 MSA• 400 – 800 Gbps
DCI (400ZR) (1550 nm)• < 80 km reach• CFP2• 400 Gbps• 400ZR standard
5G Backhaul / Fronthaul• 1310 /1550 nm wavelength• 2 - 10 km reach• QSFP• 100 Gbps
Optics
Long Haul Telecom• 1550 nm wavelength• 1000+ km reach• Usually 5x7 MSA• 400 Gbps
SR - IDC• 1310 nm wavelength• 150m -2 km• QSFP and QSFP-DD• 100-400 Gbps• Plus active optical cables
Automotive (1310 nm)• LiDAR: Light based radar• AOC: Active optical cables
Fact Access (GPON)• 1310/1490 nm wavelength• 10 km• 10 Gbps• Custom form factors
Chip to Chip Interconnect• 1310 nm• 3-10-500 m reach• IC• 112 Gbps• Backplane and acceleration
20202018 2019
Silicon Photonics Foundry Technology Roadmap
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90WGE
O-Band photonics
Monolithic RF CMOS
25G MZi NRZ/PAM4
Ge epi PD
PSR- poly/SOI
RF passives, ESD
Fiber attach SMF
45WG
Hybrid O/C band
50G Mzi Ge epi PD
SiN WG, PSR
mmWave passives
Freeform design
Passive/active SMF
Cu pillar/C4
45WGL
45WG O/C band +
Monolithic RF CMOS
50G MRR PAM4
SiN AWG athermal
Ge EPI APD
Laser attach
Alt fiber attach
90WGEX
90WGE O-band +
cWDM MUX/DeMUX
LP thermal PS
Freeform design
Passive/active SMF
90WGEL
90WGEX O-band +
35G MZi, Ge epi PD
Ge APD
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• 90WGe: Qualification Complete July 2018, Cadence PDKs model/co-design electro-optics
• 45WG: In development – first components 4Q2019, GA 4Q2020• Technology node migration – higher bandwidth (>50Gbaud), new components
90WG: Monolithic Electro-Optic Integration
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Top grating couplers
CMOS RF TIA, driver, digital logicprecision
resistor, eFuse
MZI modulators Ge EPI PD Waveguides, passives
Thermal phase shiftersstandard & undercut
4x MUX/DeMUXtunable
Edge fiber couple, passive or active align
Polarization splitter & rotator
BEOL passivesinductors, VNcap
Ridge, Rib WGsBends, tapers, Directional couplers, crossWIC, gratings, absorbers
90WG Si Photonics Technology Process Overview
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• Monolithic integration of 90nm SOI CMOS library with broad photonic device library
• Starting SOI substrate: 2um BOX, 170nm SOI for CMOS and photonic devices
• Ge EPI integration coupled into SOI WG
• 48 mask levels. 40 mask levels with hybrid option (photonics only)
• 7 BEOL levels. 6 Cu, 1 AL.
• Far-BEOL V-groove integration for fiber attach
• L1 Qual, M6 exit 7/31/2018
Ge EPI integration2um BOX
170nm SOI for CMOS and photonic devices
V-groove process integration for passive fiber attach
Standard 7 level BEOL
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Si Photonics 90WG Design Kit Features
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• Tool and Model Highlights
– Cadence-based design kit
• Co-design of electrical and optical circuits using device building blocks
• Electrical and Optical component pcells and fixed layouts
– MMSIM (Spectre)
• Verilog-A optical compact models
– Calibre DRC/LVS/xRC
– Waveguide path tool
• Waveguide layout tool including bends, tapers, crossings, coupled lines
• Generates schematic & symbol for simulation and extraction
• CAD flow of combined E/O is differentiating in the industry
• Planned PDK release updates
– Beta V1.0: 8/7/2018 All model and layout updates
MZI Modulator
Waveguide bend
Waveguide Path tool
Mode converter
CWDM DeMUX
Wavelength Independent Directional Coupler
300mm Manufacturing: Silicon Photonic Waveguides
• SOI Rib recess waveguide propagation loss comparison 200mm vs 300mm
• Advanced silicon processing is the path to higher performance photonic interconnect
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300mm200mm
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90WG SOI Waveguides
O-band SM WG 350nm wide
Ave 2.2 dB/cm
O-band MM WG 810m wide
Ave 0.8dB/cm
• Inline test automation enables wafer level statistics
– Provides insight into further process optimization
– High volume manufacturing and monitoring
50G Epi Ge P-i-n Photodetector
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Ge epi w/i 90nm CMOS thermal budget
Ge
Si
• Selective epitaxial Ge PIN PD
– Integrated with CMOS thermal processing
– BW > 39 GHz
– Responsivity ~1.0 A/W TE
– Ioff < 40nA
– Targeted for 56-64 Gbaud RX
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TE and TM responsivity at -1V, 0.7 um intrinsic W
TE 0.97 A/W, TM 0.89 A/W, PDL 0.09 (means)
Dark current 30nA (mean)
25G Si PN-depletion MZ Modulator
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Vpi*L ave 1.54
BW vs Vpp30Ghz E/O bandwidth @ 2.5Vpp
25Gb/s Large-signal Eye Diagram
Travelling wave MZM
1.9Vpp, -1VDC, 4.4dB ER
• Alpha 6 PDK hierarchical design
– Wavelength independent 3dB couplers
– Thermal phase shifters, 1V or 3V
– Fully loaded, pcell variable length1-3mm
– 30ohm termination default or custom
– 27 Ghz BW @ 2 Vpp
– Insertion loss 2.5 - 3.5 dB
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• Design Attributes
– Flat top, 13nm channel width, 20nm spacing
– Cascaded MZI using 3 stage and 2 stage filtering
– Tunable design using efficient undercut heaters <4mW / Pi shift, 7-10X more efficient vs non-undercut
– Bandgap diode for temp monitor
– Tuning protocol & look-up table to center channels on band, accounting for process variability and ambient temperature
– Can improve Min IL ~0.5-1 dB with partial flat top design
13nm Channel +-6.5nm Wavelength range (nm)
1 1264.5 to 1277.5
2 1284.5 to 1297.5
3 1304.5 to 1317.5
4 1324.5 to 1337.5
90WG 4 channel cWDM (MUX / DeMUX)
Non-undercut
Thermal phase shifter
Resistance ~ 450ohm
Ppi ~ 35 mW / pi
Undercut
Thermal phase shifter
Resistance ~ 430ohm
Ppi 2.36 mW / pi
Represents the valid region (13nm channel width, upper bound is IL, lower bound is Xtalk)
Flat top Wide DeMUX Transfer Matrix Model Results Min IL 2.2dB, Max IL 2.7dB, 1dB rolloff BW 14.5nm, Max XT -23dB
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Far BEOL – Passive Align Edge Fiber Attach
• V-groove etch in handle substrate for passive fiber alignment
• 3 stage spot converter for mode transition between SMF `10um mode and SOI SM waveguide
• Advanced lithography and OPC for optical coupling
• Reduced IL and ORL
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AA BB
Section view AA Section view BB
Fiber attach & mode converter PDK layout
V-groove passive align Low loss undercut mode converter
• Technology Debug• Semi-automated Test• Two Fiber Test• ABW• CW Tests
• Process Development • Process Monitor• Full Automation• Two Fiber Test • Lensed Fiber Alignment• Polarization Control• CW, DC & PD Leakage • WDL, BW
• Wafer Final Test• Lensed Fiber Alignment • Optical BIST Test • Scan, BIST, DC, AC, • High Volume Test • Single Fiber• Fiber Block Test 2x to 20x
• Circuit or Technology Limitations
• Package Limitations • Adherence to Stds• At Speed Performance• Benchmark Data• MCM Debug• Calibration • EUH Bring Up
MCM MFG Test
• Volume Logic Test • ASIC Compatible • Optical BIST• Custom Handler • Electrical BIST
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Technology verification Inline optical test Wafer sort test Die or MCM
functional testMCM Mfg test
GF Silicon Photonics Test Capability
GLOBALFOUNDRIES 300mm SiPh Foundry Summary
• 300mm technology platform with a broad photonic device library and state-of-art PDK
– Leverages 300mm advanced patterning and manufacturing controls
– EO and OE simulation capability
• Leading technology development roadmap
– Supports monolithic integration of photonics and CMOS
• 90WG technology fully qualified (7/31/2018), beta level PDK available (8/7/2018)
– Use as is or in conjunction with custom designs for c-band, o-band or exploratory devices
– Quarterly MPW schedule
• Broad range of photonic test capabilities
– Inline controls, model verification, reliability, and wafer level functional test
15© 2018 GLOBALFOUNDRIES
The information contained herein [is confidential and] is the property of GLOBALFOUNDRIES and/or its licensors.
This document is for informational purposes only, is current only as of the date of publication and is subject to change by GLOBALFOUNDRIES at any time without notice.
GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. Other product or
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© GLOBALFOUNDRIES Inc. 2017. Unless otherwise indicated, all rights reserved. Do not copy or redistribute except as expressly permitted by GLOBALFOUNDRIES.
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