Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A....
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Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A. Lai A. Sesselego, M. Caria Physics Dep., University of Cagliari, Italy Physics and Astronomy Dep., University of Glasgow, United Kingdom
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Transcript of Fabrication process validation for a double sided Silicon pixel detector. F. Quarati, S. Cadeddu, A....
Fabrication process validation for a double sided Silicon pixel detector.
F. Quarati, S. Cadeddu, A. Lai
A. Sesselego, M. Caria
Physics Dep., University of Cagliari, ItalyPhysics and Astronomy Dep., University of
Glasgow, United Kingdom
Detector features and measurements equipment
• High resistivity n-type silicon bulk wafer
• Boron implantation • 3 detector for each wafer • Detector area 2.8 x 3.8 cm2
• No. of pixes 16512 [IWORID 2001]
• Probe station K .Suss• Keithley 237 source meter• Keithley 2400 source meter• Keithley 590 CV analyzer• Deuterium lamp
Hamamatsu• Monochromator Y. Jobin
Processed at COLIBRISNeuchatel, Switzerland
Characteristics of the standard detector:
responsivity
• The slope is regular after 5 V of bias
-20
-15
-10
-5
0
5
10
15
-1 4 9 14 19 24
bias [V]
Signal [nA]
dark
UV radiation
Characteristics of the standard detector:depletion
• The depletion begin at low bias
0,5
0,6
0,7
0,8
0 5 10 15 20 25
bias [V]
capa
city
[pF
]
1cost V+
Characteristics of the standard detector:
single pixel depletion
• The CV is reached biasing all the detector
0,05
0,1
0,15
0 5 10 15 20 25
bias [V]
capa
city
[pF
]
1cost V+
Validation examples with collected signal (UV-dark)
• The graf. show the current value difference between UV - dark
4,5
5,5
6,5
7,5
8,5
0 5 10 15 20 25bias [V]
current [nA]
STD
bad
good
bad: swing
Complete validation with CV charac.
• The CV comparison provide that the deplation condition is also well satisfy
0,5
0,6
0,7
0,8
0 5 10 15 20 25
bias [V]
capa
city
[pF
] STD detector &previous good detector
The validation of the production process
• 24 wafer or 72 detector are been processed
• 1 wafer present C.C. for all the 3 detector
2 wafer present high noise for all 3 detector
That is 13%• 8 detector present high
noise That is 11%• 3 detector present
swing That is 4%• 21 wafer and 52
efficient detectors
72%
11%
4%
13%
detector pie
Further work
• Fit with the exponential addition is better
0,5
0,6
0,7
0,8
0 5 10 15 20 25bias [V]
capacity [pF]
2 0.0003c =
2 0.0005c =
2
1
cost1cost
VeV
-µ +
+
