Development Status of Canon’s EUVL Exposure Tool · Development Status of Canon’s EUVL Exposure...

Development Status of Development Status of Canon’s EUVL Exposure ToolCanon’s EUVL Exposure Tool

Akira Miyake, Chidane Ouchi, Hid ki M i hi d Hi hi K bHideki Morishima, and Hiroyoshi Kubo

CanonCanon IncIncCanon Canon Inc. Inc.

International EUVL Symposium, October 18 2010, Kobe Slide 1

OutlineOutlineEUVL Exposure tool Roadmap

O ti E l ti T h l iOptics Evaluation Technologies•Multilayer Evaluation•Wavefront Error (WFE) Measurement•Wavefront Error (WFE) Measurement

Evaluation Results of PO1 MirrorsS f Fi• Surface Figure

• Multilayer (phase shift distribution)

O ti l P fOptical Performance• WFE and Resolution• High-NA Projection Optics• High-NA Projection Optics

Exposure System TechnologiesS t l it filt (SPF)• Spectral purity filter (SPF)

• Optics Contamination Mitigation

SInternational EUVL Symposium, October 18 2010, Kobe Slide 2

Summary

EUVLEUVL Exposure Tool RoadmapExposure Tool Roadmap

ITRS2009 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019DRAM 1/2pitch (nm)Flash 1/2pitch (nm)

52 45 40 36 32 28 25 23 20 18 1638 32 28 25 23 20 18 16 14 13 11

HVMHVM tool (VS2)NA 0.33 OAI

PlatformHVM tool (VS3)NA > 0.4 TP Enhancement

Timing of the HVM tools is under consideration.

SFETInstalled at SELETE

Prototype 6-mirror (PO1) NA0.3Prototype ( )In-house test


AtAt--wavelength Multilayer Evaluation Systemwavelength Multilayer Evaluation SystemEvaluation Technology

EUV sourceMirror chamber Monochromator ControllerSample chamber

Polarization controlPhase measurementReflectivity measurement

M1 M3

Polarization control

Multilayer Surface

Incident Beam

Reflected Beam

Phase measurement Reflectivity measurement

Measured Reflectivity

P-polSample

RotationM2

Mo Si Mo SiSi Mo Si MoVacuum

2

3

4

Fiel

d In

tens

ity

Photoelectrons

S-polh t l t i t it d d h diff

0

1

-14 -7 0 7 14 21 28

Elec

tric

Depth (nm)


extinction factor <1E-3photoelectron intensity depends on phase difference between incident beam and reflected beam.

Wavelength CalibrationWavelength CalibrationEvaluation Technology

Real-time wavelength calibration

Primary standard:Primary standard: Krypton absorption lines

S d t d dSecondary standard: Xenon emission lines

Reflectivity of multilayer mirror and source spectrum are measured simultaneously.y

Monochromatic

CCD 2 Multilayer Samplebeam intensity monitor

Kr gas cell

EUV light

Beam splitter ( l ti )

Electron CCD 1

Electron 0th order1st order

Schematic view of the beam intensity Monitor

(plane grating) Multiplier

Using the Real time wavelength calibration method wavelength precision


Using the Real-time wavelength calibration method, wavelength precision can be maintained constantly.

EUV EUV ReflectometerReflectometer RoundRound--RobinRobinEvaluation Technology

EUV reflectometer cross calibration (Round-Robin) conducted by Selete

ti i t S l t C HOYA NIKON PTBparticipant: Selete, Canon, HOYA, NIKON, PTB

S-pol.θ = 6deg

Difference between Canon and PTBCWHM : <1pmCWHM : 1pmPeak Reflectivity : <0.2%

Measurement results by Canon and PTB show good agreement.


Poster：ML-P05 M. Amemiya et al., Selete, Canon, HOYA, NIKON, PTB

WFE measurement using low brightness sourceMISTI （M lti I h t S T lb t I t f t ）T lb t I t f t

Evaluation Technology

MIS MaskMISMask

（Pinhole arrays）

MISTI （Multi Incoherent Source Talbot Interferometer）

Single Pinpole

Talbot Interferometer（conventional）

Illumination Optics

Spherical wave from pinhole arrays

spherical wave

PO PO

Projection Optics

p yare incoherent.PO

Distorted spherical wave

PO

Optics

EUV Source

2-D Grating

2-D Grating

p

Source

Grating Waferfringe pattern fringe pattern

Wafer ChuckCCD

Changeable

Position of fringe pattern is maintained. EUV flux is multiplied by number of the pinholes.（ X105 ）

Wavefront error of the PO can be derived from analyze of the

WFE of PO can be measured using light source for exposure

Changeablepyfringe pattern.


g g pApplicable for on-machine measurement of projection optics WFE

Experimental results of WFE MeasurementEvaluation Technology

EUVEUVsource

Optics ChamberChamber

Experimental Tool using 2-Mirror PO

Fringe patternRepeatability of WFE:0 028nmRMS g pexposure time : 5sec

WFE was measured 3 times. Optical0

0.2

0.4 1st2nd3rd

Repeatability of WFE:0.028nmRMS

WFE was measured 3 times. Opticalelements (MIS mask, Grating, Illuminator) are re-aligned for each measurement.

5 10 15 20 25 30 35-0.2

0

Zernike coefficient

WFE of a PO was measured using a compact DPP source.Repeatability of WFE : 28 pm rms


This experiment was performed as a collaboration work of Canon, Nikon and University of Electro-Communications.

Mirror Surface AccuracyMirror Surface AccuracyResults of PO1 Mirrors

Surface roughness Map

⑥NA

Power Spectrum Density

1E-3

1E-2

1E-1

*mm

]

Mirror No 2

Figure: 40pmRMS

MSFR: 61pmRMS+5nm

60m

m

80m

m

②

⑤

④ ⑦

⑥

1E-5

1E-4

1E 3

er[n

m2 * Mirror No.2

-5nm

Range

16

120mmFigure: 38pmRMS

MSFR: 53pmRMS

+0.5

nm

28

①

③

④ ⑦

⑧

1E-7

1E-6

Pow

e

HSFR: 74pmRMS

Mirror No.1HSFR: 65pmRMS

+5nm

0mm

Measured roughness (pmRMS)

-0.5

nm

250mm

1E-9

1E-8

0.01 0.1 1 10 100 1000 10000

Spatial Frequency [1/mm]

HSFR: 65pmRMS

-5nm

Range

60mm

80

AreaMeasuring Point

Average① ② ③ ④ ⑤ ⑥ ⑦ ⑧

Φ5.0mm 41 41 51 41 40 42 41 45 43

Measured roughness (pmRMS)

Spatial Frequency [1/mm]Φ0.77mm 55 56 56 55 56 60 58 60 57Φ0.15mm 35 34 36 35 37 38 41 38 37

Improved polishing technology on large-area EUV mirrors have been demonstrated.The technology meet the 5% flare specification in 4 5 decades in spatial


The technology meet the 5% flare specification in 4.5 decades in spatial frequency.

Mo/Si multilayer coatingMo/Si multilayer coatingResults of PO1 Mirrors

Multilayer thickness distribution and reflection phase shift distribution of a mirror

radial position

reflection phase shift distribution of a mirror of projection optics were evaluated.

ML Thickness Distribution Phase Shift Distribution

Thickness variation ≦0.032％ Uncorrectable phase error ≦2mλThickness variation ≦0.032％

Multilayer Coating performance necessary for HVM

Uncorrectable phase error ≦2mλ


y g p yexposure tool is achieved.

WavefrontWavefront Error of a 6Error of a 6--Mirror Projection OpticsMirror Projection OpticsOptical Performance

Wavefront error of 0.33NA projection optics is estimated based on evaluation results of PO1 Mirrors. In the estimation, following factors areevaluation results of PO1 Mirrors. In the estimation, following factors are considered.

• mirror surface figure errors based on measured data of PO1 mirrorti b d d d t f PO1 i• coating errors based on measured data of PO1 mirror

• alignment errors of mirrors (positions, tilt)

Estimated wavefront error (WFE) Map

2mm

26mm


Z4-36RMS (worst) : 0.5 nm for 33 fields

Optical Performance

Estimated performance for hp16nmEstimated performance for hp16nm

1

NA0.33 PO with Off Axis Illumination (OAI)Illumination condition

2 0

0.2

0.4

0.6

0.8

1

σout=0.8σin =0.5 1.5

2.0 x hgt= 1x hgt= 2x hgt= 3x hgt= 4x hgt= 5

h t 6200

-0.8

-0.6

-0.4

-0.2

0

1.0

NIL

S

x hgt= 6x hgt= 7x hgt= 8x hgt= 9x hgt= 10x hgt= 11y hgt= 1

200nm

-1 -0.5 0 0.5 1-1

0.0

0.5 y hgt= 2y hgt= 3y hgt= 4y hgt= 5y hgt= 6y hgt= 7y hgt= 8

-150 -100 -50 0 50 100 150Focus(nm)

y gy hgt= 9y hgt= 10y hgt= 11

PatternL/S=16 nm

DOF >200nm for NILS>1.2 (16nm pattern )

Performance of NA0.33 PO was estimated.P di t d l ti i h f 16 tt i ti


Predicted resolution is enough for 16nm pattern printing.

High NA PO Design High NA PO Design Optical Performance

NA0.5NA0.5NANA≧≧0 400 40

NA0.25NA0.25 NA0.3NA0.3

NANA≧≧0.400.40

NANA≧≧0.300.30

8 mirrors

6 mirrors

4 mirrors

NANA0.2 0.3 0.4hp32 hp23 hp16 hp11


System Technology

Spectral Purity of LPP SourceSource Charqacteristic Requirement

Spectral purity:

Spectral purity part of “Joint Requirements for EUV Source”

“Joint Requirements for EUV Source” Nikon, ASML, Canon EUVL symposium 2009

130-400 [nm] (DUV/UV)

≥400 [nm] (IR/Vis) including 10.6 μm (3)

<1% at wafervalues at IF-design dependent<10 – 100% at wafervalues at IF-design dependent

(3) Assuming 10.6 mm being the excitation laser wavelength

Measured out-of-band spectrumParameter, Dimension Measurement conditions or

Measured Data

OOB EUV (5-130nm excluding On Band ) at IF 3.3% for EUV band from 9 to 21 nm

DUV(130-400nm) 40-70% of IB in plasma Cymer Inc Igor V FomenkovU ( 30 00 ) 0 0% o p as a(extrapolation of exponential fit)

VIS-NIR(400nm-1.5 mm) 6% of IB in plasma.MLM has low R for this band

IR (1 10 ) 0 01% i l i i l fi

Assumptions10 6mmradiation at IF : 50%

Cymer Inc. Igor V. Fomenkovet al, Proc. SPIE 7271-119

IR (1.5-10μm) <0.01% in plasma using exponential fit

10.6μm Reflection 50% of Inband EUV

10.6mmradiation at IF : 50% (ratio to in-band EUV)Mirror [email protected] : 65%Mirror [email protected]μm : 90%Number of reflection : 12Estimated IR power @ wafer is 25X of in band EUV

Spectral purity filter eliminating 10.6μm radiation

Number of reflection : 12Estimated IR power @ wafer is 25X of in-band EUV.


is needed for CO2 Laser LPP source.

Spectral Purity FilterSystem Technology

Reflection type spectral purity filter (ML coated blazed grating)20 8

dsinα - dsinβ = mλ

0.9

1

45

50

強度分布

0次 1次

20

b) 6

7

8

13.5nm

m=380dsinα dsinβ mλ

α = 15degd = 50μm

13.5nm

10.6μmα β

0.5

0.6

0.7

0.8

20

25

30

35

40

系列1

EUV

０次回

折d 80umα 7degθ 2degN 10

0次 1次

4°3.6°

10

nte

nsi

ty (ar

b

3

4

5

10.6μm

m=0m=1

θ = 3deg10.6μm

50μm

θ

d

Grating Parameters0

0.1

0.2

0.3

0.4

-5

0

5

10

15

-20 -15 -10 -5 0 5 10 15 20

N 10

0

In

0

1

2

m=-1

Incident angle αDiffraction angle βGrating pitch d

g050

0 5 10 15 20 25 30Diffraction Angle (deg)

0

g pBraze angle θDiffraction order m

A reflection type blazed grating can work as a spectral purity filter eliminating 10.6μm radiation.Ad t f h t l d d bilit


Advantage of heat load durability

System Technology

Optics lifetime/Carbon deposition MitigationOptics lifetime/Carbon deposition MitigationCarbon deposition on EUVL exposure tool optics degrades throughput and imaging quality. Mitigation method of carbon deposition has been developed.

Mitigation effect of oxidizing gas

2 5

3.0

m/h

r.)

decane(~E-6 Pa)+O2(1E-2 Pa)HVM Tool

1.5

2.0

2.5

tion

rate

(nm decane(~E 6 Pa)+O2(1E 2 Pa)

decane(~E-6 Pa)+ H2O(1E-2 Pa)

decane(~E-6 Pa)+ [O2+O3](1E-2 Pa)

EUV intensity

O2

0.0

0.5

1.0

bon

depo

sit

EUV source: NewSUBARUSample: [Si(4.2nm)/ Mo(2.8nm) ]50

Irradiation time: 3 hr.

H2O O2+O3

-0.5 0 50 100 150 200

carb

average EUV intensity(mW/mm2)

O2+O3 is effective as the mitigation gas in the region of HVM Tool EUV intensityTool EUV intensity.

This experiment was performed as a collaboration work of Canon, Nikon and University of Hyogo.


Poster：OC-P06 T. Nakayama et al.,Canon, NIKON, LASTI

SummarySummary

Key technologies for HVM EUVL exposure tools have been developed.

• Multilayer evaluation (reflectivity, phase shift)

• Wavefront measurement using low brightness source

• Mirror figuring and ML deposition satisfying HVM tool requirementsMirror figuring and ML deposition satisfying HVM tool requirements

• Reflection type spectral purity filter

• Mitigation of carbon deposition

Timing of HVM EUVL exposure tools is under consideration.


AcknowledgmentAcknowledgment

Parts of this work were performed under the management ofParts of this work were performed under the management of

Extreme Ultraviolet Lithography System Development Association

(EUVA) in the Ministry of Economy Trade and Industry program

supported by New Energy and Industrial Technology Developmentsupported by New Energy and Industrial Technology Development

Organization (NEDO).


Thank you for your attention!Thank you for your attention!y yy y


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