Nano-Electronics

Dr. Doug Barlage

W2-112; barlage@ualberta.ca

Courses Available

• ECE 450 – Nano-scale phenomena in electronic Devices

• ECE 456 – Transport in electronic devices • ECE 457 – Fabrication of nano-scale Devices • EE 445 -- Computation for Nanoengineering • EE475 – Optoelectronic and Photovoltaic Devices • EE 496 – Nano-engineering Option Research and

Design Project Seminar • List any important prerequisites ECE 340,

Electromagnetics

Specializing Professors

• Michael Brett, Jie Chen, Steve Dew, Stephane Evoy, Jie Han, Jeremy Sit, Mani Vaidyanathan, Vien Van, Roger J. Zemp, Doug Barlage, Kartik Shanker, Ray DeCorby, Y. Tsui, Sandipan Pramanik,entire Photonics area has overlap!!

• Nano-electronics overlaps a large area of electrical engineering and impacts almost all other areas – We don’t make final products, we make the final products BETTER – sometimes so much better it’s a new product

IEEE – Spectrum top inventions from 2000-2010

NanoTechnology Is a partner with All of them

IEEE – Spectrum top inventions from 2000-2010

NanoTechnology Is a partner with All of them Low Power Electronics

Computing power

High Bandwidth Networks

Material Developments Scaled Transistors Hard – Drive Technology

Radar/Communications Control Systems Power Switches

Transistor Innovations CCD Arrays

What does nanotechnology look like

• Very small Transistors as Small as DNA

[John Jackson & Inman. Gene 1989 84 221 Research Transistor

15nm Research Transistor

IEDM 2009 – Intel Production

March 19th 2010 University of Alberta

Raised

Source

Raised

Drain

Metal

Gate

Compare to Textbook picture

What’s different?

Physical Interpretation

1

10

100

1000

10000

1995 2000 2005 2010 2015 2020 2025 2030

Year

Electric Field (kV/cm)

Past Critical Field of

GaN in 2015

Intrinsic Cutoff

Frequency ft (GHz)

(Near 1THz in 2015)

No known theoretical or

demonsstrated solution in

Silicon Alone

# electrons/gate

(~10 in 2015)

Effective Gaate

Length (nm)

(Around 10nm

in 2015)

Present

1

(2015) (2015) (2015)2015

(2010) (2010) (2010)

1850

2t

ox g g

present ox g g

CVf GHz

I

C L WC

C C L W

2015 MOS Goals

7

7

0.8900

9 10

0.8 0.25 0.25333

9 10

field

field

V kVE

cm

V V V kVE

cm

geff g

geff

geff

L »L (drawn)-SD(overlap)

L =10nm-1nm

L »9nm

19

2

106.1

98.05.3)(#

)(#

)(#

nVholeselectrons

q

VCholeselectrons

q

VCholeselectrons

March 19th 2010 University of Alberta

What do you do in nano-technology

• Cool Simulations

Physical Gate Length (9nm)

Printed Gate Length (13nm)

Body Thickness (3nm)

Oxide Thichness (0.5nm)

Spacer (18nm)

0.00E+00

2.00E-01

4.00E-01

6.00E-01

8.00E-01

1.00E+00

1.20E+00

1.40E+00

1.60E+00

-70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

X (nm)

Electrostatic Potential(V)

0.E+00

1.E+19

2.E+19

3.E+19

4.E+19

5.E+19

6.E+19

Doping Concentration

OnOffDoping Concentration

LgLsp

Source

Drain

GateSpacer Spacer

SOURCEDRAIN

A)

Ele

ctr

on

Po

ten

tia

l (V

)

On Potential

Off Potential

Vgs-Vth

0.2

-0.2

-0.4

-0.6

-0.8

-1.0

0

5·1019

0

4·1019

3·1019

2·1019

1·1019

Do

pa

nt C

on

ce

ntra

tion

cm

-3

0

5000000

10000000

15000000

20000000

25000000

30000000

35000000

40000000

45000000

-70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

X (nm)

Electron Velocityl(V)

On OffLg

Lsp

Source

Drain

GateSpacer Spacer

SOURCE DRAIN

B)4·107

3·107

2·107

1·107E

lectr

on

Ve

locity (

cm

/s)

Off Velocity

On Velocity

Many Ways to Deplete

• At 10nm the wave function is fully removed from the wall – electrons travel more like a pipe

4 Nov 2011 Barlage 10

Y. Jin 2005

Chau,2001, .. Barlage…

What does nanotechnology look like

Transistor Lasers

TEM of GaN Sc2O3

26 April 2010 Barlage et. Al 13

Reality – not just simulation

• Big Equipment to measure little things

Surface Characterization

26 April 2010 Barlage et. Al 15

RF Operation of Enhancement Mode Device

Osemi Oxide – 120 Angstroms

Nickel Gate

Al0.2Ga0.8N – 300 Angstroms – n doped--1E18

Ti-Al-TiAuTi-Al-TiAu

In0.2Ga0.8N – 500 Angstroms – n doped--2E17

Buffer -- GaN – 8000 Angstroms – I doped

Buffer -- AlN – 500 Angstroms –i-doped

26 April 2010 Barlage et. Al 17

0

1

2

3

4

5

6

7

8

9

10

Vgs (V)

Ft

(GH

z)

Vds=4 Vds=6 Vds=8 Vds=10

Vds=12 Vds=14

-10 -8 -6 -4 -2 0 2 4 6 8 10

Oxide to Suppress

Surface Traps

Depletion

Mode

On-Logic

Another way for depletion .. At U of A with A. Ma, M. Gupta,K.

Shankar and Y. Tsui • Schottky barrier source drain devices on GaN

4 Nov 2011 Barlage 19

Jobs

• Device Synthesis

• Device Modeling

• Process Control

• Sensor System Development

• Circuit Design

• Nano-system Design

– Nano deals with interaction of signals, power and light with matter