Courses Available
• ECE 450 – Nano-scale phenomena in electronic Devices
• ECE 456 – Transport in electronic devices • ECE 457 – Fabrication of nano-scale Devices • EE 445 -- Computation for Nanoengineering • EE475 – Optoelectronic and Photovoltaic Devices • EE 496 – Nano-engineering Option Research and
Design Project Seminar • List any important prerequisites ECE 340,
Electromagnetics
Specializing Professors
• Michael Brett, Jie Chen, Steve Dew, Stephane Evoy, Jie Han, Jeremy Sit, Mani Vaidyanathan, Vien Van, Roger J. Zemp, Doug Barlage, Kartik Shanker, Ray DeCorby, Y. Tsui, Sandipan Pramanik,entire Photonics area has overlap!!
• Nano-electronics overlaps a large area of electrical engineering and impacts almost all other areas – We don’t make final products, we make the final products BETTER – sometimes so much better it’s a new product
IEEE – Spectrum top inventions from 2000-2010
NanoTechnology Is a partner with All of them
IEEE – Spectrum top inventions from 2000-2010
NanoTechnology Is a partner with All of them Low Power Electronics
Computing power
High Bandwidth Networks
Material Developments Scaled Transistors Hard – Drive Technology
Radar/Communications Control Systems Power Switches
Transistor Innovations CCD Arrays
What does nanotechnology look like
• Very small Transistors as Small as DNA
[John Jackson & Inman. Gene 1989 84 221 Research Transistor
15nm Research Transistor
IEDM 2009 – Intel Production
March 19th 2010 University of Alberta
Raised
Source
Raised
Drain
Metal
Gate
Compare to Textbook picture
What’s different?
Physical Interpretation
1
10
100
1000
10000
1995 2000 2005 2010 2015 2020 2025 2030
Year
Electric Field (kV/cm)
Past Critical Field of
GaN in 2015
Intrinsic Cutoff
Frequency ft (GHz)
(Near 1THz in 2015)
No known theoretical or
demonsstrated solution in
Silicon Alone
# electrons/gate
(~10 in 2015)
Effective Gaate
Length (nm)
(Around 10nm
in 2015)
Present
1
(2015) (2015) (2015)2015
(2010) (2010) (2010)
1850
2t
ox g g
present ox g g
CVf GHz
I
C L WC
C C L W
2015 MOS Goals
7
7
0.8900
9 10
0.8 0.25 0.25333
9 10
field
field
V kVE
cm
V V V kVE
cm
geff g
geff
geff
L »L (drawn)-SD(overlap)
L =10nm-1nm
L »9nm
19
2
106.1
98.05.3)(#
)(#
)(#
nVholeselectrons
q
VCholeselectrons
q
VCholeselectrons
March 19th 2010 University of Alberta
What do you do in nano-technology
• Cool Simulations
Physical Gate Length (9nm)
Printed Gate Length (13nm)
Body Thickness (3nm)
Oxide Thichness (0.5nm)
Spacer (18nm)
0.00E+00
2.00E-01
4.00E-01
6.00E-01
8.00E-01
1.00E+00
1.20E+00
1.40E+00
1.60E+00
-70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
X (nm)
Electrostatic Potential(V)
0.E+00
1.E+19
2.E+19
3.E+19
4.E+19
5.E+19
6.E+19
Doping Concentration
OnOffDoping Concentration
LgLsp
Source
Drain
GateSpacer Spacer
SOURCEDRAIN
A)
Ele
ctr
on
Po
ten
tia
l (V
)
On Potential
Off Potential
Vgs-Vth
0.2
-0.2
-0.4
-0.6
-0.8
-1.0
0
5·1019
0
4·1019
3·1019
2·1019
1·1019
Do
pa
nt C
on
ce
ntra
tion
cm
-3
0
5000000
10000000
15000000
20000000
25000000
30000000
35000000
40000000
45000000
-70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
X (nm)
Electron Velocityl(V)
On OffLg
Lsp
Source
Drain
GateSpacer Spacer
SOURCE DRAIN
B)4·107
3·107
2·107
1·107E
lectr
on
Ve
locity (
cm
/s)
Off Velocity
On Velocity
Many Ways to Deplete
• At 10nm the wave function is fully removed from the wall – electrons travel more like a pipe
4 Nov 2011 Barlage 10
Y. Jin 2005
Chau,2001, .. Barlage…
What does nanotechnology look like
Transistor Lasers
TEM of GaN Sc2O3
26 April 2010 Barlage et. Al 13
Reality – not just simulation
• Big Equipment to measure little things
Surface Characterization
26 April 2010 Barlage et. Al 15
RF Operation of Enhancement Mode Device
Osemi Oxide – 120 Angstroms
Nickel Gate
Al0.2Ga0.8N – 300 Angstroms – n doped--1E18
Ti-Al-TiAuTi-Al-TiAu
In0.2Ga0.8N – 500 Angstroms – n doped--2E17
Buffer -- GaN – 8000 Angstroms – I doped
Buffer -- AlN – 500 Angstroms –i-doped
26 April 2010 Barlage et. Al 17
0
1
2
3
4
5
6
7
8
9
10
Vgs (V)
Ft
(GH
z)
Vds=4 Vds=6 Vds=8 Vds=10
Vds=12 Vds=14
-10 -8 -6 -4 -2 0 2 4 6 8 10
Oxide to Suppress
Surface Traps
Depletion
Mode
On-Logic
Another way for depletion .. At U of A with A. Ma, M. Gupta,K.
Shankar and Y. Tsui • Schottky barrier source drain devices on GaN
4 Nov 2011 Barlage 19
Jobs
• Device Synthesis
• Device Modeling
• Process Control
• Sensor System Development
• Circuit Design
• Nano-system Design
– Nano deals with interaction of signals, power and light with matter
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