3-D NAND and UFS - Optimized Mobile Storage

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©2016 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Statements regarding products, including regarding their features, availability, functionality, or compatibility, are provided for informational purposes only and do not modify the warranty, if any, applicable to any product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks are the property of Micron Technology, Inc. All other trademarks are the property of their respective owners. #InnovationAccelerated 3-D NAND and UFS Optimized Mobile Storage Carla Christensen Senior Product Marketing Manager Mobile Business Unit

Transcript of 3-D NAND and UFS - Optimized Mobile Storage

Page 1: 3-D NAND and UFS - Optimized Mobile Storage

©2016 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to

change without notice. All information is provided on an “AS IS” basis without warranties of any kind.

Statements regarding products, including regarding their features, availability, functionality, or compatibility,

are provided for informational purposes only and do not modify the warranty, if any, applicable to any

product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks are the

property of Micron Technology, Inc. All other trademarks are the property of their respective owners.

#InnovationAccelerated3-D NAND and UFS

Optimized Mobile Storage

Carla Christensen

Senior Product Marketing Manager

Mobile Business Unit

Page 2: 3-D NAND and UFS - Optimized Mobile Storage

© 2016 Micron Technology, Inc. |

| September 26, 2016

The Future of Mobile

2 September 26, 2016 | #InnovationAccelerated

Virtual Reality /

Augmented Reality

5G

Faster, More

Connected NetworksNext-Generation

Smartphone

???

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© 2016 Micron Technology, Inc. |

Overview

Mobile consumes a huge amount of Memory & Flash

UFS and the Mobile Ecosystem

3D NAND in Mobile

3 September 26, 2016 | #InnovationAccelerated

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© 2016 Micron Technology, Inc. |

Mobile Market Flash Outlook

4 September 26, 2016 | #InnovationAccelerated

4968

97

13332

48

70

97

6

8

11

15

2015 2016 2017 2018

Tablet

Smartphone

All-other

NAND Bit Demand

>45% of Total

Bytes

are

Mobile

Source: MBU Strategic Marketing

Billion of GB Equivalent

Mix of Mobile Memory interface (%)

0%

20%

40%

60%

80%

100%

2015 2016 2017 2018

Other

UFS

eMMC

By Unit Shipment

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© 2016 Micron Technology, Inc. |5 September 26, 2016 | #InnovationAccelerated

Mobile Breakdown by Segment

Flagship

High/Mid End

Low End

‘Feature’ differentiation 64bit Processing; 4-6GB LP4/4x Dual Lens Cameras VR Headset Compatibility 32-128GB UFS v2.1 G3x1L/2L

‘Cost’ differentiation Reduced features and hardware spec ~3 months time to market 1-2GB LP2/3 + 8/16GB eMMC (MCP)

‘Specification’ differentiation 32bit Processing; 3-4GB LP3/4x MCP and Discrete/PoP Mix 16-64GB eMMC v5.1/UFS v2.1 G3x1L

*Un-subsidized Retail Price. Low-end models usually sold at a higher discount.

UFS Market

Adoption

‘15-’165+

Chipsets

20173+

Chipsets

2018?

$500+

~$300

<$250

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© 2016 Micron Technology, Inc. |6 September 26, 2016 | #InnovationAccelerated

Next-Gen Mobile Performance Scaling

0

400

800

1200

1600

2000

2400

2012 2013 2014 2015 2016 2018?

eMMC UFS

UFS 2.1 HS-G3, 2-Lane

UFS 2.0 HS-G3, 1-Lane

UFS 3.0 HS-G4, 2-Lane

eMMCv5.1

eMMCv5.0

eMMCv4.51eMMC

v4.41

Interface

Bandwidth

[MB/s]

Future Performance Scaling

• UFS Interface allows for

Bandwidth Growth needed

for Next-Gen Mobile

• Serial high-speed interface

is scalable for faster speeds

& Multi-Lane Support

• Full-duplexing for

simultaneous Read/Write

mixed-mode operation

• Mobile Storage Interface no

longer a bottleneck!

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© 2016 Micron Technology, Inc. |7 September 26, 2016 | #InnovationAccelerated

Optimal Performance Requires a System-Level Approach

UFS Device

UFS µC

Error Correction

Firmware(NAND Management)

µProcessor

H

O

S

T

I/F

N

A

N

D

I/F

Data

I/O

3D

NAND

NAND MediaPerformance scales with

# of die (to Max I/O

bandwidth)

Typically 8 die Max due

to packaging and cost

limitations

3D NAND offers

numerous advantages:

• Faster R/W

performance

• Density Scaling

• Higher power

efficiency and lower

sleep power

• Increased Reliability

NAND I/OPerformance scales with # of

channels and interface speed

• Bandwidth increasing

533MT/s 667MT/s 800MT/s

UFS ControllerBlocks scaled to deliver

desired performance within

cost and power budget

UFS FirmwareIncreased efficiency to

deliver consistently

high performance

Host I/OPerformance scales

by speed selection

and up to 2 Lanes

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© 2016 Micron Technology, Inc. |

| September 26, 2016

3D NAND Scaling Advantages

Density Scaling

– Higher Densities in Mobile

packages

– Lower cost per Byte

Increased Reliability

– Larger Cell Size stores more

electrons per state

Faster Performance

Improved Endurance

Superior Data Retention

8 September 26, 2016 | #InnovationAccelerated

34nm

25nm

20nm 16nm 1Znm

32-tier TLC3D

3D Gen 2

Die Density

Generation

50nm

2D Max Die Density

Limited to 128Gb

for 11.5x13mm

Mobile Package

3D allows further

density scaling for

11.5x13mm Mobile

Package

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© 2016 Micron Technology, Inc. |

Mid- / Low-End

• Standalone Application Processor

• MCP – Managed NAND + LPDDR

• Up to 128GB UFS + 6GB LP possible

Flagship / High-End

• PoP Configuration (App. Processor + LPDDR)

• Standalone UFS – typically up to 8-die stack

• 128GB growing to 256GB and up

9 September 26, 2016 | #InnovationAccelerated

µC

NAND

AP

LPDRAM

Board

AP NANDLPDRAMµC

NAND

LPDRAMLPDRAM

Board

Mobile Packaging and 3D NANDHigher densities made possible using 3D NAND

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© 2016 Micron Technology, Inc. |10 September 26, 2016 | #InnovationAccelerated

Micron Mobile UFS 3D NAND MemoryBreakthrough storage performance, power and reliability

High Performance~30% faster sequential writes

vs. 2D NAND; UFS 2.1 interface

delivers 33% higher bandwidth

vs. e.MMC 5.1

Enhanced ReliabilityUnique floating gate technology

provides superior data retention

compared to charge trap gates

High CapacityHigher storage capacity in a

smaller space with 3D NAND’s

vertically tiered die

Power EfficiencySignificantly reduce power

with 3D NAND’s efficient

sleep mode feature

Superior Mobile

ExperienceFaster boot up, seamless HD

streaming, high bandwidth

gaming, and responsive camera

performance

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© 2015 Micron Technology, Inc.

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#InnovationAccelerated