Memory and MobilityMemory and Mobility

The New Generation of LowThe New Generation of Low--Power Power Memories Intended for the Memories Intended for the

Smartphone and Tablet Markets Smartphone and Tablet Markets ppand Their Relative Positioningand Their Relative Positioning

Memory Matters @ CES 2012 -Eric Spanneut - Micron Technology

An increasing number of memory interfaces are used An increasing number of memory interfaces are used to address the highto address the high--end lowend low--power mobile device power mobile device

marketmarket2007 2015

NAND

market .market .

Non-Volatile Memory

Interfaces

NORNAND

NANDe.MMC

UFSSATAInterfaces SATA

LPDDR2 NVMLPDDR1

Volatile Memory LPDDR1

LPDDR2LPDDR3Wide IOInterfaces Wide IO

LPDDR4*DDRx “low-voltage”

* Not yet proposed - placeholder for future LP-DRAM interface.

New categories of mobile devices are emerging New categories of mobile devices are emerging in the market placein the market placein the market place.in the market place.

100%“PC Market” - form factor changes 60% Thin/Light

& T bl t

75%

Tablet

& Tablet

50%

Thin/light notebookNotebook

NetbookThese new categories

25% Desktop

grepresent

new targets for low-power

0%2008 2009 2010 2011 2012 2013 2014 2015

power memories!

Source: Micron Marketing, Gartner, Intel

Each segment of the highEach segment of the high--end mobile market end mobile market has several memory interface alternatives.has several memory interface alternatives.has several memory interface alternatives. has several memory interface alternatives.

Non VolatileMillion units

Volatile Volatile

SATA LPDDR3, DDRx, LPDDR4, Wide IO

10001200

1400

Thin/light Notebook

e.MMC, UFS, NAND, SATA

LPDDR3, DDRx, LPDDR4, Wide IO

e.MMC, NANDUFS

LPDDR3, DDRx, Wide IO?, LPDDR4?

600800

1000Tablet

Entry Tablet

e.MMCUFS, NAND

LPDDR3, Wide IO, LPDDR4

e.MMC, NAND LPDDR1, LPDDR2,0

200400 Smartphone

Entry Smartphone

UFS?,

LPDDR30

2012 2015 Source: Micron Marketing

The value chain has strong inertia, The value chain has strong inertia, giving a long tail to legacy interfaces.giving a long tail to legacy interfaces.

O/S Chi t MCarriers OEMs O/S Vendors

ChipsetVendors

MemoryVendors

Long qualification cycles

Reuse of legacy chipsets

Slow in integrating latest JEDEC advancement

Reuse of legacy memory controllers

Recovery of investmentcycles chipsets advancement

scontrollers

• Almost all phones using e.MMC are still on the 4.2/4.3 standard!

• LPDDR1 still extremely strong in the entry smartphone segment!y g y g

DRAM Technology TrendsDRAM Technology TrendsLPDDR4/WideIO2

h pe

r die

) LPDDR4/WideIO2 [8Gb – 32Gb] TBD

DDR4 [4Gb – 32Gb] 6.4GB/s

s LPDDR3 [4Gb – 16Gb] 6 4GB/s

WideIO [4Gb – 32Gb] 12.8GB/s

band

wid

thar

t Pho

nes LPDDR3 [4Gb – 16Gb] 6.4GB/s

y (d

ensi

ty/b

DDR3Lm [1Gb – 8Gb] 3.7GB/s

Sm LPDDR2 [64Mb – 8Gb] 4.3GB/s

echn

olog

y

DDR3 [1Gb – 4Gb] 4.3GB/s

LPDDR1 [64Mb – 2Gb] 1.6GB/s

’06 ’07 ’08 ’09 ’10 ’11 ’12 ’13 ’14 ’15 ’16 ’17

Te

January 12

’06 ’07 ’08 ’09 ’10 ’11 ’12 ’13 ’14 ’15 ’16 ’17

Volatile memories Volatile memories -- Breakdown by interface in the Breakdown by interface in the Smartphone & Tablet spaces (Units)Smartphone & Tablet spaces (Units)

Breakdown by Interface

100%

60%

80%DDRxLPDDR4

20%

40%

60% LPDDR4Wide IOLPDDR3LPDDR2

S Mi M k ti

0%

20%

2012 2013 2014 2015

LPDDR1

• LPDDR2 will gradually replace LPDDR1 in the entry smartphone market.

LPDDR3 should see major growth fueled by insatiable demand for

Source: Micron Marketing2012 2013 2014 2015

• LPDDR3 should see major growth fueled by insatiable demand for bandwidth.

Volatile memories Volatile memories -- Breakdown by Interface in the Breakdown by Interface in the Smartphone & Tablet Spaces (Gb Equiv.)Smartphone & Tablet Spaces (Gb Equiv.)

vs

DDR

80%

100%

f Gb Eq

uiv

DDRx

LPDDR4

40%

60%

centage o WideIO

LPDDR3

S Mi M k ti

0%

20%

Perc LPDDR2  

LPDDR1

• Further sub-segmentation to be expected with a wide variety of supported densities.

Non binary densities expected

Source: Micron Marketing2011 2012 2013 2014 2015

• Non-binary densities expected.

Volatile memories: Criteria of selectionVolatile memories: Criteria of selection

Entry Smartphone

High-end Smartphone

Entry Tablet High-end Tablet

Thin/light Notebook

HighHigh Bandwidth

Low Energy/Bit

Low Standby Power

Low Cost

Small Real EstateHighHigh

ScalabilityStrong

Ecosystem

Case study: LPDDR3 and DDR3LCase study: LPDDR3 and DDR3Lmm

PriceLPDDR3

DDR3L

LPDDR3

DDR3Lm

P C ti

DDR3

Power Consumption

Opportunity to position an additional device!

Case study: WideCase study: Wide--IO and LPDDR4IO and LPDDR4

• Wide adoption of Wide-IO will probably end up being a matter of costbeing a matter of cost:

• Can the manufacturing and testing costs be contained?

• Can the industry converge on “PoP-like” business models between the players of the value chain?

• Can the solution afford the added cost of a silicon interposer?

Non volatile memoriesNon volatile memoriesBreakdown by density in the Smartphone & Tablet Breakdown by density in the Smartphone & Tablet

SpacesSpacesSpacesSpaces

Non volatile memories: criteria of selectionNon volatile memories: criteria of selection

Entry Smartphone

High-end Smartphone Entry Tablet High-end

TabletThin/light NotebookSmartphone Smartphone Tablet Notebook

High Performance

Low StandbyLow Standby Power

Low Cost

Strong Ecosystem

e MMC: the reference choice in mobile handsetse MMC: the reference choice in mobile handsets

Ecosystem• Most widely enabled interface• Large availability of drivers• Multiple suppliers

Cost

Multiple suppliers

• Multiple sources• No royalties• Limited IP cost and barriers to entry

L P M d

• Limited IP cost and barriers to entry• Cost of controller depends on performance needs

ffLow-Power Modes • Efficient physical layer

• Can’t compete with command-queuing

Peak Performanceinterfaces but..• Sufficient for the most part of the overall market.

4 5 system level performance features provide• 4.5 system-level performance features provide room to additional improvement.

UFS, the next generation ofUFS, the next generation ofnonnon--volatile memory for Mobilevolatile memory for Mobile

• Support new mobile computing paradigm

– Low-latency, high IOPS

– Command queuing, multi-threaded operation

• Tailored for mobile applications

– Low power consumption

– Functional features for mobile inherited from e-MMC

• Leverage high-performance standardsg g p

– MIPI M-PHY and UniPro standards for PHY and Link layers

– SCSI command protocolSCSI command protocol

UFS: superior performance for the futureUFS: superior performance for the future

Interface Speed Relative Random Performance(Projected)

1000

1200

1400

ed

UFS v2.0HS Gear 3

(Projected)with Command

Queuing

200

400

600

800

Inte

rfac

e Sp

ee(M

B/s

ec)

e-MMC v4.452MHz DDR

UFS v1.0HS Gear 2 Single-threaded,

no queue

0

200

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

52MHz DDRe-MMC v4.5

200MHz SDR

e-MMC UFS

UFS vs. lowUFS vs. low--power SATApower SATAUFS (M bil ld) SATA (PC ld)

Ecosystem• UFS (Mobile world) vs. SATA (PC world).• Low-power processors with SATA implementations available earlier.

Cost • Generally similar.

Low-Power Modes

• UFS has a physical layer designed for low-power mode.• SATA low power mode implementation is still in• SATA low-power mode implementation is still in the works.

• Similar with command queuing – Bottleneck is Peak Performance

q gNAND performance.• Time to market better for SATA but how viable SATA will be as a solution for the Mobile world is a question mark.

New classes of hybrid systems are to emerge as NAND New classes of hybrid systems are to emerge as NAND reliability and performance degrade.reliability and performance degrade.

Enduring/Power loss

immune

Separately partition data that degrades NAND

Memory (PCM)

+

performance and endurance!

NORSLC

and/orMLC NAND

SLC and/or

MLC NAND

+

+

MLC NAND

+

MLC NAND

+

PSRAM DRAM DRAM

Micron develops a complete portfolio of low-power memories intended for all high-end mobile market sub-segmentsg g

Smart Phones Tablet Thin/light Notebook

• NAND + LPDDR1 MCP • e.MMC + LPDDR1/2/3 MCP• e.MMC Discrete

LPDDR2/3/4 Di t

• e.MMC Discrete • e.MMC + LPDDR2/3 MCP• NAND

• SSD • LPDDR3/4• Wide I/O

• LPDDR2/3/4 Discrete• Wide I/O

• LPDDR2/3/4 Discrete• DDRx Discrete• Wide I/O

• DDRx Discrete and Modules

January 5, 2012

Thank you!

January 5, 2012