eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market &...

18
Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar

Transcript of eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market &...

Page 1: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

Oct, 2015 l Samsung Memory NAND Marketing

eStorage Market & UFS Seminar

Page 2: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

2 NAND Marketing Group

NAND Application Trend

Mobile eStorage and SSD lead NAND market

• More Smartphone demand expected, while less Tablet demand (weaker demand in 7”)

Smart phone Tablet SSD

eMMC

eMCP

MCP

eMMC/UFS

eMCP

MCP

eMMC

eMCP

Comp

eMMC

eMCP

Comp

SATA

SAS

SATA

PCIe

12.5

4.4

17.3

26.7

4.9

5.59.4

15.0

24.7NAND TAM

Solutions

2013 2014 2015 2013 2014 2015 2013 2014 2015

SAS

+ 55%

+ 12%

+ 65%(BGB) (BGB) (BGB)

GB/Sys

M Set

10121,210

1,401

223

240234

5061

80+ 16% - 2%

+ 32%

12.3 19.014.3 19.9 20.5 23.5 188.5 247.7 309.2+ 34% + 14% + 25%

(Prev. 238M)(Prev. 1,390M)

Page 3: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

3 NAND Marketing Group

Mobile Market Segmentation by eStorage

Flagship

Mainstream

Ap

plic

atio

n eMMC4.5/5.0 eMMC5.0 eMMC5.1/UFS

eMMC5.0 eMMC5.1/UFS UFS

16/32GB32/64GB

64/128GB

4/8GB8/16GB

16/32GB

Differentiation in flagship with 64/128GB UFS

Steady U/X in mainstream with 16~128GB eMMC 5.1

„14 „15 „16

64/128GB

Page 4: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

4 NAND Marketing Group

Projection of UFS Penetration

UFS adoption in High-end

Mid-range penetration is expected to start in ‟16. 3Q

• 1 Year lagging adoption behind high-end

Mobile solution 채용 예상 업체별 UFS 채용 예상

Flagship

`15 `16

Mid

High

Low

`14

Page 5: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

5 NAND Marketing Group

Flash Memory Interface 변화 Trend

Higher speed Interface로의 변화

• eStorag: eMMC(Max 400Mbps) UFS(Max 6Gbps)

Page 6: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

6 Speaker’s Name

UFS Concept

Small SSD in Smartphone

Page 7: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

7 NAND Marketing Group

UFS 장점

High Speed Host Interface[<6Gbps/lane]

Low EMI

Dual Simplex channel enables “Read While Write” or opposite ops.

Command Queuing- Device has capability to server up to 32

command at the same timeUFS

UFS position in Mipi Systems

Page 8: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

8 Speaker’s Name

Simplified eMMC/UFS HW 구조

Power : Power for NAND Flash, Power for Controller

Page 9: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

9 Samsung Memory

UFS : Simple PCB routing and cost save

UFS : Simple PCB routing and cost save

AP

<3.3cm

AP UFS

<10cm

eMMC

50K R

VDD

Tx

Rx

Ref_Clk

H/W Reset

X8 Data IO

CLK

CMD

H/W Reset

eMMC PCB Design Connection Guide

UFS PCB Design Connection Guide

Page 10: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

10 NAND Marketing Group

Functional Comparison for HW Perspective

Item eMMC 5.0 UFS 2.0

Host I/F Speed DDR 400Mhz 3Ghz x2 Lane(6Ghz)

Host Signal Type CMOS LVDS

I/O swing Level 1.8V 240mV

Comm. Type Half Duplex Full Duplex

I/O Error Detection CRC16/512Byte CRC16/272Byte

Buffer Control Busy signal Unipro support, RTT

Major Improvements : Support High B/W and sophisticated I/O Error Handling scheme

Comparison of Communication type.

UFS

HOST

UFS

Device

IN

Que

Out

Que

Out

Que

IN

Que

3Gbps / 2 lane

CMD Que CMD QueUFS 2.0

RD OpWR Op

Page 11: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

11 NAND Marketing Group

Functional Comparison for SW Perspective

Item eMMC 5.0 UFS 2.0

Sector Size 512 Byte 4096 Byte (RPMB 512Byte)

RPMB O O

#Lun 4 8

Boot Partition O O

Fast Boot O O

Command Queue X O

Concurrent Ops. X O

Secure Trim/Erase O O

Other eMMC features. O O

Command Protocol eMMC SCSI

UFS SW function covers all of eMMC SW features.

Page 12: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

12 NAND Marketing Group

Command Queue

TimeHost UFS

READ CMD (Address A)

WRITE CMD (Address B)

READ CMD (Address C)

WRITE DATA (Address B)

READ DATA (Address A)

Next Command

Read Data Transfer

Write Data Transfer

and Programming

READ DATA (Address C)

Host e.MMC

READ CMD (Address A)

READ DATA (Address A)

WRITE CMD (Address B)

WRITE DATA (Address B)

READ DATA (Address C)

Next Command

READ CMD (Address C)

Read Data Transfer

Read Data Transfer

Write Data Transfer

and Programming

Read Access Latency

Read Access Latency

e.MMC• Single-threaded operational model

• Half-duplex data transfer

• Must wait for a command execution to complete before issuing the next command

UFS

• Supports concurrent operations, command queuing

, out-of-order execution

• Full-duplex data transfer

Page 13: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

13 NAND Marketing Group

Read while write

Read While Write

• UFS gives you better user experience with low latency and better

throughput

Synchronous

RDHost RD StorageWR WR

CMD RSPData CMD RSP

WR RD

Data

Host

eMMC

Read while Write(Full duplex)

Host Storage

RX

TX RX

TXRD

WR

RX

TX RX

TX

RD

WR

RD RD

WR WR

RD

WR

RD

WR

RD

WR WR

Dual Write (Multi Lane)

UFS

Asynchronous

WR

Data

Data

Data

CMD

CMD

RD

WR WR RD Host

WR Data

Low Latency for Responsive(Out of order execution)

Better throughput(Simultaneous read and write)

Command Handshaking Channel Configuration

Page 14: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

14 NAND Marketing Group

Performance / Power

Power Comparison @32GBeMMC5.0

UFS2.0

Read Current

(mA)

Write Current

(mA)

210180

Standby Current

(uA)

350uA250uA

200240

Power Efficiency of UFS

Cu

rre

nt

Time

Ran. R

Ran. W

Energy SavingsMore than 30%

Random Write

14KIOPs16.4K IOPs

X1.1

UFS2.0eMMC5.1

Random Read

13KIOPs

25.3K IOPs

X1.9

UFS2.0eMMC5.1

Sequential Write

145MB/s173MB/s

X1.1

UFS2.0eMMC5.1

Address+

320MB/s

473MB/s

X1.4

UFS2.0eMMC5.1

Sequential Read

Page 15: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

15 NAND Marketing Group

UFS M-PHY Compliance Test Suite

Serial Interface Compliance Test Suite SATA, PCIe, M-PHY 모두 비슷한 인증 과정 적용

Device 적용 환경에 따른 Compliance Test 환경 다양하게 Set-up 정의

Page 16: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

16 NAND Marketing Group

Samsung Memory Set Validation items

응용기술 Validation list

NO Item 상세

1 Power integrity Power supply(VCC/VCCQ2), Power up ramp

2 Signal integrity Eye Opening, Jitter, REF CLK

3 Functions Booting, Reset, Sleep

4 Board Design guide 4.7uF+0.22uF(VCC), 2.2uF+0.22uF(VCCQ2)

Page 17: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD

17 NAND Marketing Group

2015 October eStorage Lineup Update

Available2015 2016

Q4 Q1 Q2 Q3

UFS

eMMC

(MLC)

eMMC

(TLC)

ES CSOctober 2015

64GB

• PKG : 11.5x13x1.2

• eMMC 5.1

128GB

64GB

32GB

1Znm

4GB

128GB

64GB

32GB

16GB

8GB

16nm

0• PKG : 11.5x13x1.0

• eMMC 5.1

8GB

128GB

32GB

16GB

256GB V3• PKG : 11.5x13x1.2

• UFS2.0 G32L

64GB

128GB

32GB

16GB

• PKG : 11.5x13x1.2

• PKG : 11.5x13x1.0

• PKG : 11.5x13x0.8

128GB

64GB

Page 18: eStorage Market & UFS Seminar€¦ · Oct, 2015 l Samsung Memory NAND Marketing eStorage Market & UFS Seminar. 2 NAND Marketing Group NAND Application Trend Mobile eStorage and SSD