Asia Pacific Asia Pacific Regional Update

2005 2005 EUVL SYMPOSIUM, SAN DIEGO CA, U.S.AEUVL SYMPOSIUM, SAN DIEGO CA, U.S.A

Regional Update

EUVA/ASET (Japan)

Yasuhiro Horiike　

(National Institute for Materials Science)

OutlineOutline1. Light source development

1.1 DPP (Discharge Produced Plasma)

1.2 LPP (Laser Produced Plasma)

2. Performances of polishing technologies using IBF (Ion Beam Figuring)

3. Advance in wavefront measurement system

4. Study on origin and control of contamination

5. EUVL process technology development

6. Development of SFET (Small Field Exposure Tool) and α tool

7. Present and future plan for Japan EUVL technology development

8. Summary

Low inductance DPP sourceLow inductance DPP sourceUnify discharge head and magnetic pulse compaction structure

Low inductance Peak current; 40kAPulse width; 140ns

DPP radiation

Xe gasSource power; 190W/2π

IF power：19W

For HVP source, Sn fuel is now being developingMagnetic pulse

compaction

Condenser

Charging terminal

Magnetic core

Conventional

Magnetic compactionstage

High inductance

Electrode

Magnetic coreTansmission

line

Condenser

Insulator Plasma

Low inductance

50kW, 7kHz pulseCompaction type

power source

Debris mitigation of focusing mirror for DPPDebris mitigation of focusing mirror for DPPMirror specimen: Ru/Si

0.00

0.20

0.40

0.60

0.80

1.00

1.20

without debris shield

gas curtain only

gas curtain＋ｆoil trap

Relative variation of mirror reflectivity in exposure experiment

type ： Ugic-03

20 deg.

30 deg.

20 deg.Aperture

Discharge head

SourceDetector-1

Foil trap

外側ミラー 内側ミラー

Type; Ugic-03N

orm

aliz

ed in

tens

ity ra

tio

Shot number(×106)0 2 4 6 8 10

Gas curtain alone

Gas curtain + Foil trap

Without debris mitigation

The experiment at 107

shots was stopped

Detector-2

Foil trap

Ultrasonic gas curtain

発光点集光点

外側ミラー内側ミラー

スパイダー（ミラー保持）

Source IF

OutsideInside

Spider mirror hold)

Ultrasonic gas curtain

Focusing characteristics at IF planeFocusing characteristics at IF plane

Figure of light source more than 120nm

Distribution of light more than 120nm

Grazing angle incident correctorIntermediate

focus (IF) plane

Distribution of EUV light

Out of band wavelength light does not focus at the IF plane due to lager size of the source point

120-400nm： 3.5%400-750nm： 0.16%750nm>　　： 0.13%

For in-band　EUV light

SnSn source by SnHsource by SnH44 ((StannanStannan) discharge) discharge7kHz pulsed power generator

Stannane supply unit

DPP source chamber

1/e2 size : 1.16 x 10.0

Plasma image (20 deg.)

Stannane (SnH4) fuel :

・ Demonstrated source power➪ 397W /2π at 7kHz

・ Estimated usable IF power➪ 33W /3.3mm2sr

　　　　　　　　 with πsr collectorCalculated focus image

Primary source power

Electrode edge

19.03.4

396.7

205.3

0

50

100

150

200

250

300

350

400

450

0 1 2 3 4 5 6 7 8Pulse repetition rate (kHz)

In-b

and

radi

atio

n po

wer

(W/2

PIsr

) fuel feed rate : fixed

LPP: Efforts to 10W@IF with pulse amp. by RFLPP: Efforts to 10W@IF with pulse amp. by RF--COCO22

Amplification: 3.6 times2.9 timesShort pulse oscillator

100WPre amp.

5kWMain amp.

15kW0.15kW 0.69kW 7.4kW

Pre amp.5kW

2kWMulti-line seeder System：Jan. 2006

>10W@I/F

Multi -lineseed light

Generation of multi-Line seed light

4 lines oscillate

Collaboration with Max Born Institute

Xe Jet

YAG

200nsec

EUV

Plasma

CO2

4.6 times

CO2-8x1010W/cm2 C.E.; 0.6%

Xe droplet plasma

Li target experiment by Miyazaki university demonstrated that double pulses irradiation decreased greatly energy of ions generated from Li plasma

A variety of mass limit targets for debris mitigationA variety of mass limit targets for debris mitigation

Droplets

Cylindrical jet

Plane

laser

Heated Debris region

Source

Plasma Foam shell

Punch-out target（ILE and ILT）

Transparent substrate

Density: 0.5 g/cc (7% of Bulk)

2mm

200µm

Hollow jet（U. of Hyogo）

Punch-outlaser

Sn jet > 500 m/s

1 mmHeat laser

Heater pulse

Ion beam figuring (IBF) for LSFRIon beam figuring (IBF) for LSFR

Panorama of equipment

凸部分

加工点

イオンガン

Ion gun chamber

Load rock chamber

Zerodurinput

Small tool

IBF

Result

0.247nm rms

0.139nm rms

ApertureIon beam

Ion gun

Aspheric surface

5 axes numerical controlled stage

Ion beam

Ion gun

Zerodur

Kaufman type ⇒RF type

11mmmm2 2 areaarea IBF for waviness eliminationIBF for waviness elimination

X

Y

Z

MirrorIon gun

(3axes tilt)

Before： 0.359nm rms

After： 0.132nm rms

Long term excellent stabilityVariation;±1.4％

φ40mm

0.5 mm

Vacuum chamber

Stage

Work holding

EB・IB gun

Interferometer for Interferometer for asphericalaspherical mirror surfacemirror surface

Null lens generating aspherical wave front

Mirror to be measured　　

Reference lens

Visible light laser

CCD camera

0.00

0.02

0.04

0.06

0.08

0.10

0 200 400 600 800 1000Number of averaging

phase data　× 　Number of avaraging

intensity data

Rep

eata

bilty

　(nm

rms) Asphrical mirror (05/03/23)

Asphrical mirror (05/05/25)

0 50 100 150

mm

0 50 100 150

mm

0 50 100 150

mm

Cross sectionBird’s-eye view

Goal of repeatability50pm rms

Pase averaging x intensity averaging Reatability：0.032nm rms

Wavefront measurement system for 6 mirrors optics

LSI (Lateral Shearing Interferometer)PDI (Point Diffraction Interferometer)

3.5m

Observation camera

Stage mechanism for wafer sideStage mechanism for wafer side

Connected to Hygo prefecture Univ.”New Subaru” SR beam line

6 mirrors optics

August, 2006

Measurement system has been established

LDI (Line Diffraction Interferometer)CG-LSI (Cross-Grating Lateral

Shearing　Interferometer)

Chamber vacuum, leticle & wafer stages are now completed

Contamination control technologiesContamination control technologies

a) Protection for contamination

a-2) Surface evaluation a-1) Attachment and oxidation

b) Capping layerb-1) Screening of materialsb-2) Film structure and deposition

c) Elimination of contamination c-1) Carbon elimination ratec-2) Surface damage

d) Difference between pulse and CW lights

d-1) Experimental toold-2) Contamination evaluation

New chamber (small HC) Old chamber (High HC)

XPS測定部

X / mm

XPS測定部

X / mm

0.99

0.97

0.95

9.0 9.5 10.0 10.5 11.019.0

19.5

20.0

20.5

21.0

Z / m

m

0.930.950.970.991.01

1.000.98

0.980.96

0.96

0.96

-1.0 -0.5 0.0 0.5 1.0-1.0

-0.5

0.0

0.5

1.0

0.940.960.981.001.01

R / R

0

SiOxRuOx

The new chamber with low hydro-carbon (HC) showed considerable oxidation at irradiated region, but the old one with high HC supressed oxidation

The new chamber with low hydro-carbon (HC) showed considerable oxidation at irradiated region, but the old one with high HC supressed oxidation

SR light irradiation to Ru(2nm)/Si/Mo multi-layer and XPS and reflectivity measurement

0.0E+002.0E-054.0E-056.0E-058.0E-051.0E-041.2E-041.4E-041.6E-041.8E-04

1.E-06 1.E-04 1.E-02Rel

ativ

e re

flect

ivity

(k)

Ru(NTT)Ru(UH)

H2O partial pressure (Pa)

k=b・ln（水分圧）+c

Decrease in refractivity against water partial pressure can be estimated

Cha

nge

in re

frec

tivity

0.97

0.98

0.99

1.00

1.01

0 50 100 150 200 250 300Dose (J/mm2)

Ru(4)Ru(2)Ru(3)Ru(0)Ru(1)

Choice of Ru deposition condition improves anti-oxidation

Research items

Atomic Hydrogen Cleaning of carbon and Atomic Hydrogen Cleaning of carbon and RuRu oxideoxide1

4

7

10

13

16

19 X [mm]

Y4 [mm]

Y2.5 [mm]

Y1 [mm]

Y-0.5 [mm]

Y-2 [mm]

0.010.020.030.040.050.060.070.0

60.0 -70.0

50.0 -60.0

40.0 -50.0

30.0 -40.0

20.0 -30.0

10.0 -20.0

0.0 -10.0

1

5

9

13

17

21

S1

S5

S9

S130.010.020.030.040.050.060.070.0

60.0 -70.0

50.0 -60.0

40.0 -50.0

30.0 -40.0

20.0 -30.0

10.0 -20.0

0.0 -10.0

Carbon cleaning Ru oxide reduction

Binding Energy (eV) Binding Energy (eV)

Ru Oxide

Hot-wire apparatus

Carbon contamination was removed, and reflectivity-loss was recovered almost completely by atomic hydrogen.Ru oxide formed on Ru surface was reduced to metallic Ru by atomic hydrogen treatment.

EUV Process Technology

Resist Exposure with Resist Exposure with HiNAHiNA SetSet--33

Nov.8 8:20, Oizumi, EUVL Symposium 2005

Mask holderIllumination Optics

Projection OpticsWafer Stage

Set-3 optics was installed to HiNA exposure tool at August 2004 in Atsugi Lab.28 nm l/s pattern was replicated using chemically amplified resist.

28-nm L/S35-nm half pitch40-nm hp 30-nm L/S

EUV Process Technology

EUVL Mask FabricationEUVL Mask Fabrication

TaGeN based Mask fabrication process was established in collaboration with DNP.Non printability of AFM-repaired pattern defect was demonstrated.

Example of EUVL mask

19 nm L/S@wafer 25 nm L/S@waferFine pattern fabrication

Program defect Repaired pattern Printed ImagePrintability test of defect repairing

TaGeN

Cr

Etch Profile

EUV Process Technology

SFET (Small Field Exposure Tool) developmentSFET (Small Field Exposure Tool) development

0.11nm rms

0.10 nm rms

Xe recycle system

TMPXe flow

MirrorXe jet

IF

KrF excimer laserWavelength:248nmPower:320WPulse energy:80mJRepetition:4kHz

SFET

Goal:①Verification of source and polishing technologies developed by EUVA

　 ②Resist process development for hp45-32nm

　　　 ③Evaluation of mask blank defect , etcSpecification: 2 mirrors aspherical mirrors、

NA=0.3、0.5W source、Exposure area of 200×600μm2, Flare less than 7%

SFET mock up

25mm

70mm

M2 mirror (Zerodur)

Leticlestage

Wafer stage

Optics

EUV chamber

June, 2006

Full Field Exposure Tool (EUV1)Full Field Exposure Tool (EUV1)Main Specification

- Field size; 26x33mm- NA; 0.25- Magnification; 1/4 - Flare; less than equal to 10%- Through put; 5-10w/h@300mmΦ- Source type; DPP, 10W@IF

Delivery date- 1H/2007

Current Status- System and Module design: completed- Source: manufacturing by supplier- Projection Optics: proto-typing- Tools for mirror metrology: completed- Stages/Body: start manufacturing

PO boxProto-type

PO mirror M1

Present & future plan for EUVL technology developmentPresent & future plan for EUVL technology development

EUV12002 2003 2004 2005 2006 2007 2008 2009 2010FY

Source

Tool

SFET

α β HVM

（Basic technology development）

2011

Resist process

Module process

SFET

EUVA end hp45nmHVM

Polishing

100W/Sn

50W/Xe/Sn

Tsukuba R&Dcenter

LPP0.5W/Xe

DPP10W/Xe

Evaluation

MXST LPP project

Technology transfer

EUVA

Independent R&D by companies

SummarySummary　　　　　　　　1. Japan EUVL technologies advance steadily for source, tool and

process and are now expected as a key lithography for hp45-32 nm LSI devices.

2. DPP source has been developed greatly as a light system and SnH4gas will provide a hopeful source for HVM based on our original debris mitigation technology.

3. Although delay of LPP development depends on CO2 driver laser, 10W IF power will be achieved within two months. Ion mitigation by high magnetic field design and physics & a lot of useful resultsobtained by MEXT LPP projects will realize HVM LPP source.

4. Basic technologies for EUV tool is also developed steadily and SFET and α tool will appear June, 2006 and first half, 2007, respectively.

5. We believe that the EUVL technologies does not only develop the LSI devices moreover, but also offer nano/pico technologies further prosperity of human beings.

AcknowledgementAcknowledgementThe presenter would like to express deep thanks for researchers from EUVA, ASET and Leading Project of MEXT (Ministry of education, sports, culture, science and technology) and financial supports by NEDO (New Energy and Industrial Technology Development Organization) and MEXT.