1. Executive Summaryjohnson/MRSEC/2009-NSF-SiteVisit/C-SPIN4... · 2009-03-17 · 1. Executive...

1. Executive Summary

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CENTER FOR SEMICONDUCTOR PHYSICS IN NANOSTRUCTURES Overview: The Center for Semiconductor Physics in Nanostructures (C-SPIN) is an ongoing partnership between researchers at the Universities of Arkansas (UA) and Oklahoma (OU). It is rooted in our common interest in nanoscience and in our need for a greater collaborative circle to address interdisciplinary materials science issues which are critical for both future technologies and fundamental physics. The partnership of more than 20 researchers spanning Chemistry and Biochemistry, Electrical Engineering, Physics, Engineering Physics, and Mechanical Engineering, allows us to tackle projects of a scope and complexity not feasible under the traditional funding of individual research projects. During the six-year grant period, we will continue improve materials science education reaching from K-12 to graduate school to the general public. We will continue to explore and develop the collective behavior of periodic arrays of nanostructures and uncover and utilize the science of mesoscopic narrow bandgap systems by means of our unique breadth of fabrication techniques and range of materials. Rationale and Impact: The quest for improvement in computing power, data storage, and communication requires new approaches to fabrication, new materials systems, and new methods of operation. Both OU and UA have strong traditions of research in novel materials and in a broad spectrum of complementary nanoscale fabrication and characterization techniques. Our partnership is born of necessity—only together do we have the required scope of tools and expertise. Our IRG1 collaboration brings together proficiency in molecular beam epitaxy (MBE), electron microscopy, and optical probe techniques which resulted in our previous success in the fabrication and understanding of the underlying materials science and behavior of self-assembled structures. Building on this foundation we will advance the science and tailor the behavior of organized arrays of nanostructures. These advances will provide the basis for high density memory elements, crafted photonic lattices, and high efficiency arrays of light emitters and detectors. Similarly, IRG2 research in high mobility narrow bandgap semiconductors is a collaborative effort with demonstrated successes in growth, ballistic transport, and optical studies of important spin behaviors with potential applications in bio-magnetic sensing, infra-red detection and emission and spintronic devices. We also have continued a strong record in educational and scientific human resource development, and science education outreach in a region that is badly in need of both.

C-SPIN has already had a significant impact on the institutional culture at OU and UA. First, within C-SPIN it is now the routine procedure to set up internet video-conferences to discuss samples, recent theoretical advances or issues of administration. Participation in educational outreach is the norm among C-SPIN faculty, rather than the exception. Second, new research facilities have drawn in new users. For example, the Semiconductor Processing and Fabrication Facility (SPiFF), originally used only by faculty in Physics and Electrical Engineering, is now used in collaboration with faculty in chemistry, biochemistry and chemical engineering. Moreover the research mission of each university is moving towards nanoscience, with new hires in electrical engineering and chemistry as well as new fundraising efforts from individual donors.

In addition to its research mission, C-SPIN is reaching out to the larger community. Since neither Arkansas nor Oklahoma is a traditionally high tech economy, we expect to have a proportionally larger impact on our region than do most Centers. By improving science education, enhancing minority participation, promoting careers in materials science, and assisting local industry, we not only train the next generation of scientists and engineers, we help sow the seeds for the future economic development of the region. Research Activities:

To uncover the underlying science needed to design and control the growth and behavior of nanostructures, we are developing shared facilities, combining efforts in sample growth and characterization, and are co-fabricating devices. This is accomplished by two interdisciplinary groups, IRG1 and IRG2, the first dealing with nanostructure arrays and the second dealing with mesoscopic narrow gap systems. While the results of these groups will affect one another, they each have separate and well-defined goals:


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Collective Properties of Nanostructure Arrays (IRG1): A near term goal of IRG1 is to further refine our skills in MBE, colloidal, and templated growth, which have already yielded beautifully ordered 2D and 3D arrays of quantum dots, wires, and rings. This effort has been expanded to include ferroelectric arrays, thus taking advantage of a theoretical strength. Achieving this control over growth has yielded systems that give new insight into the collective interactions between individual units and will provide the basis for new optical and electronic materials. A longer term goal is to tailor a number of remarkable properties of 3D arrays: geometry dependent excited state lifetimes; improved size uniformity; tailored refraction and dispersion, and enhanced nonlinear optical, dielectric, and piezoelectric coefficients, to produce negative refractive index materials that increase the limits of optical resolution, to advance handheld wireless devices, and to provide inexpensive memory that is fast, flexible, scalable, low-power, and non-volatile. Mesoscopic Narrow Gap Systems (IRG2): The demand for higher speed operation, denser memory, and increased functionality has motivated research on nanoscale electronic devices that now exploit quantum mechanical effects. We are utilizing the unique properties of narrow bandgap materials to address these needs. Our narrow gap growth effort already boasts the world’s highest room temperature mobility in any semiconductor quantum well. We anticipate that these materials which are ideally suited to quantum confinement will make significant contributions to infrared detectors, bio-magnetic field sensors, ballistic transport devices, and spintronic devices. Seed: Our Seed projects enhance interdisciplinary and inter-campus efforts within the Center. Two of which resulted in independent NSF funding, focuses on the tremendous potential for engineering surfaces to improve tribiological properties by exploiting our previous success in nano-templating. Education and Outreach:

Historically successful outreach efforts include RET programs, REU site programs and minority recruitment programs at both campuses, as well as an IGERT in Photonics at UA. They are supplemented by several additional outreach efforts: training opportunities and demonstration equipment for middle school and high school teachers; support of BEST robotics competitions among middle and high school students, and development and coordination of after school activities for K-5 children. C-SPIN collaborates with OKAMP (OU) and (UA) programs to improve minority recruiting retention and placement.

C-SPIN has enhanced graduate training through hands-on experience with state-of-the-art research equipment, interdisciplinary teaming, joint seminars, programs to develop entrepreneurial skills for engineers, and internships with industry. Students will be familiar with issues from crystal growth to device production. Our goal is to produce students fully prepared to drive the advancement of nanostructures in academic and industrial settings.

We continue to take pride in our K-12 and informal science outreach programs at C-SPIN. UA and OU have recently established partnerships with children’s museum networks in each state. We have also begun development of a nanotechnology teaching resources digital library. In collaboration with ComPADRE (funded by the NSF National Science Digital Library), we (OU) have begun collecting links to materials from the literature, conferences/workshops, and web-based outreach programs to establish a database of nanoscience-related teaching resources. In addition, we (UA) have won a $1.6 M award from the Hughes Foundation to develop an Undergraduate Research Center focused on interdisciplinary research in nanoscience. The center is based on a studio concept that brings undergraduate physics, biology, and chemistry major to work together under one roof. Shared Facilities:

C-SPIN has leveraged the comprehensive equipment base of its investigators as well as its shared facilities. Both OU and UA have molecular beam epitaxy (MBE) systems with in situ scanning probe microscopy; while similar, these systems can grow different materials and have complementary capabilities. Ex situ optical studies of Center samples occur primarily at UA, while transport measurements are accomplished at OU. C-SPIN has already funded upgrades to existing fabrication and characterization facilities at UA and OU.


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Industrial and International Collaborations: C-SPIN has a number of external collaborators both in industry and at domestic national labs (e.g. Amethyst Research, Intel, Los Alamos, Sandia and Argonne National Labs, ARL, NREL and the National High Magnetic Field Laboratory) and in international institutions (e.g. Universite de Franche Comte and CNRS in France, Tohoku University and NTT in Japan, University of Alberta in Canada, Humboldt University in Germany and Ioffe Institute in Russia) to name just a few. The SEED program continues to develop ties with scientists trained in other disciplines. Management Plan:

Daily administration of the IRGs is the responsibility of the IRG directors (Salamo and Santos). The IRG directors report to the executive committee, made up of the IRG directors, the MRSEC director (Johnson), and the supervising faculty members for the industrial (Peng) and educational (Mullen) outreach. Since C-SPIN spans two universities, we make use of existing videoconferencing facilities for seminars and meetings. Overall coordination of efforts and information at OU and UA is handled by the Program Manager, Christy Wilson at OU and Carol Fleming at UA. An External Review Board, made up of ten members from industry, state government, and academia, receives written reports on each IRG, and partakes in a mid-cycle site visit. This review also acts as a springboard for collaborations with industry. Key Accomplishments in 2008-2009 (Intellectual Merit)

2008 was a fruitful year for the Center in regard to research accomplishments, education, and broader impacts to society. This is evidenced by the fact both IRGs and SEEDs reported significant developments in the growth and physics of nanoscale structures and devices, described in 90 publications (57 primary and 33 partial support) during the reporting period.

IRG1: Johnson and Salamo investigated InAs quantum dot (QD) formation in arrays of GaAs ring-like nanostructures. They demonstrated that the observed optical spectrum was due to QDs coupled with the GaAs ring structure on which they form. In another direction, Salamo’s group demonstrated that they are able to control the configuration of QDs and investigated the progression of InGaAs quantum dot molecules (QDMs) from quad-QDMs to QD pair rods. Mullen has calculated interesting polarization transitions in arrays of semiconducting shells (quantum well QD’s) for different geometries while Salamo is attempting to measure these effects in samples made by Peng’s group.

In addition, Salamo and German collaborators recently reported the first use of the coherence between quantum well excitons and surface plasmon polaritons to precisely control the exciton-plasmon interaction. Meanwhile Manasreh’s group investigated cubic AlN/GaN superlattice structures. These systems exhibit a large conduction band offset (up to 1.7 eV) that allowed his group to optically design structures with intersubband transitions in the spectral ranges of 0.7 to 30 µm.

Xiao was able to observe and understand the enhanced blinking behavior of single Mn-doped ZnSe quantum dots synthesized by Peng’s group while Johnson and Peng further investigated the formation of d-dots for branched and spherical shapes. Interestingly, TEM analysis indicated that Mn2+ dopants were localized in the core of branched shapes. Meanwhile, Tian and Xiao investigated the second-harmonic imaging of ZnO micro/nano structures as well as whispering gallery optical modes.

In another direction, Chakhalian and Xiao markedly reduced defect concentration with a new method to control defect states. This allowed them to demonstrate a method to control and reduce the electronic and defect states at the surface. They unambiguously confirmed that a substrate is not a passive layer but instead it can efficiently modify the electronic structure of a transition metal ion.

Bellaiche’s group used a first-principle-based technique to investigate dynamical coupling between polarization and picosecond time-scale strain pulses in ferroelectric nanolayers. They found a mechanism that explains the puzzling experimental observations of a large dynamical change and time delay of the induced polarization. Meanwhile Fu performed ab initio studies to investigate the collective response to curled electric fields, and the vortex switching mechanism, in ferroelectric nanoparticles made of Pb(Zr0:5Ti0:5)O3 solid solution. Simulations revealed a novel mechanism that governs the switching of a


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FE vortex. Salamo is growing nanoferroelectric structures and will compare with the simulations of Bellaiche and Fu. IRG2: We made significant progress in the focus areas of spin physics, III-V materials and devices, and IV-VI materials and device. Salamo, Murphy, and Santos performed a systematic infrared pump/probe study of the spin lifetime in bulk InSb as a function of carrier density and temperature. The experiments confirm that below 77 K, the Elliot-Yafet mechanism dominates the spin relaxation and that the lifetime is suitable for an InSb-based spintronic device. Ongoing transport measurements by Murphy and Santos focus on the extraction of spin-orbit coupling coefficients from weak-localization experiments at low temperatures and low magnetic fields. Xie theoretically investigated the existence of a persistent spin current without an accompanying charge current in a semiconducting mesoscopic ring with a spin-orbit interaction, a follow up to his studies of quantum wires. Murphy, Santos, and Mullen are designing InSb quantum well (QW) structures with maximally tunable spin-orbit coupling and investigating spin-orbit coupling in bilayer systems. Mullen adapted atomic scattering theories to model devices in magnetic fields.

With Intel and other collaborators, Santos explored the integration of several promising high-κ dielectrics with InxGa1-xAs/InxAl1-xAs structures grown on InP substrates. Santos also fabricated the first p-type InSb QWs with an effective mass measured in cyclotron resonance experiments by Doezema and Santos to be as low as 0.04me. Santos also worked with Amethyst Research Inc. to grow n-type InSb QWs on Ge substrates. Yang, Santos, and Johnson demonstrated IC lasers made from InAs/AlSb/GaSb epilayers on a plasmon waveguide structure grown on an InAs substrate. The emission wavelength at 150K is 5.9 µm, which is now the longest wavelength achieved by III-V interband diode lasers.

McCann reported the growth of PbSe quantum dot chains with a nominal size of 60 nm arranged on a Si substrate preferentially along the <110> direction. Shi fabricated PbSe micro-rods on (111)-oriented BaF2. Shi also reported the fabrication of an electrically pumped PbSrSe/PbSe edge-emitting laser. Pulsed laser emission was observed at 5.2 µm at temperatures as high as 158 K with a maximum of 40% duty cycle. Shi investigated conditions that can enhance the lasing action of these PbSe materials and performed photoluminescence studies of PbSe thin films passivated by high-purity O2 at different annealing temperatures. Key Accomplishments in 2008-2009 (Broader Impact)

Accomplishments within Education and Broader Impact were achieved in the education of university students and K-12 outreach. About 30 graduate students and 11 undergraduates performed research in C-SPIN during the reporting period. Continuing outreach activities included RET and REU programs at both campuses, after-school programs for K-5 students, and robotics competitions for middle and high school students. The UA K-12 I Do Science program was recognized with an NSF media award for the development of a video that brought “national prominence to the GK-12 program”. Future and Long Range Plans:

Each of our IRGs has been organized as a team with a proven track record in its research focus. C-SPIN is rare in its breadth of nano-fabrication techniques (from molecular beam epitaxy to colloidal growth to the use of anodized aluminum oxide templates), its wealth of materials systems (III-V, II-VI, and IV-VI semiconductors) and its diversity of characterization tools. We will continue to target areas of broad fundamental importance. IRG1 will continue to investigate the growth of nanostructure arrays to better understand their chemistry, surface energies and relaxation dynamics. IRG2 will continue to work toward fundamental progress on quantum, ballistic, and spin physics in relatively untapped materials ideally suited for these studies. We will also continue to develop enabling technologies and explore potential applications in both IRGs.

Our strategy for making broader impact will continue to focus on the education and technical training of undergraduate and graduate students, activities that affect the K-12 education and the economy of Oklahoma and Arkansas, and the enhancement of diversity in the nanotechnology workforce. Summary:


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The C-SPIN MRSEC, founded on our individual research efforts, driven by our common need for collaboration, and aided by our industrial and international partnerships, is in an excellent position to make a significant impact in science on the national scale and in education and economics on the regional scale.

2. List of Center Participants

C E N T E R R E S E A R C H E R

University of Oklahoma Physics and Astronomy Lloyd Bumm, Associate Professor Ryan Doezema, Professor and Chair Matthew Johnson, Webb Presidental Professor Bruce Mason, Associate Professor Kieran Mullen, Professor Sheena Murphy, Associate Professor Michael Santos, Professor and Blackburn Chair in Engineering Physics Electrical and Computing Engineering Patrick McCann, George Lynn Cross Professor Zhisheng Shi, Professor Rui Yang, Professor Chemistry Wai Tak Yip, Associate Professor Ron Halterman, Professor Oklahoma State University – Physics Xincheng Xie, Regents Professor

University of Arkansas Physics Laurent Bellaiche, Professor Jacques Chakhalian, Assistant Professor Huaxiang Fu, Associate Professor Jaili Li, Associate Professor Greg Salamo, Distinguished Professor Surrendra Singh, Professor Min Xiao Distinguished Professor Chemistry Xiaogang Peng, Scharlau Professor of Chemistry Z. Ryan Tian, Assistant Professor Electrical Engineering Omar Manasreh, Professor Mechanical Engineering Min Zou, Associate Professor

A F F I L I A T E

Joel Keay, MBE/SPM Preston Larson, SEM Tetsuya Mishima, TEM and MBE Mukul Debnath, MBE

Morgan Ware, Director of Education Outreach Paul Calleja, Educational Outreach Specialist Ken Vickers, Research Professor (Physics), REU Gay Stewart, Assoc. Professor (Physics), GK-12 Mourad Benamara, TEM Lab Tech Support John Shultz, MBE Lab Tech Support

U S E R

Amy W.K. Liu, IQE plc Oscar K. Awitor, U. d'Auvergne (France) Prof. Roger Frech, Chem. Biochem., OU Prof. David Schmidtke, CMBE, OU Prof. Daniel Resasco, CMBE, OU

George Stegeman, University of Central Florida Moti Segev, Princeton University Mathieu Chauvet, Universite de Franche Comte Euclydes Marega, University of San Paulo, Brazil Jerzy Krasinski, Oklahoma State University

I N S T I T U T I O N S

Academic: University of Arkansas at Pine Bluff (AR) Université d'Auvergne (France) Université de Frauche-Comte (France) University of Central Florida Carl Von Ossietzky University Humboldt-Universitat zu Berlin (Germany) University of Texas, Austin University of Alberta Ioffe Institute (Russia) Tokohu University (Japan) SUNY-Albany

Non-academic: Hitachi Global Storage Technologies (CA) NTT Basic Research Laboratories (Japan) Texas Instruments (TX) Argonne National Laboratory (IL) IQE plc (PA) Intel Amethyst (OK)

3. List of Center Collaborators

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Collaborator Institution e-mail Field of expertise IRG #

association User of Shared

Facilities Oscar K. Awitor Université d'Auvergne [email protected] Photocatalysis of TiO2 1 Yes

Doug Craig Air Force Research Lab, Integrated Microsystems Group [email protected] Photonics 1 No

Mathieu Chauvet Universite de Franche Comte [email protected] Waveguides 1 Yes Yujie Ding Lehigh University [email protected] Nanostructures 1 Yes

Bret N. Flanders Oklahoma State Growth of Nanostructures 1 David Awschalom UCSB [email protected] Magnetic/ Semiconductor

Nanoparticles Spintronics 1 No

Frank Hegmann University of Alberta [email protected] TeraHertz Spectroscopy 1 No

Jing Li Rutgers University, NJ [email protected] Organic-inorganic hybrid nanomaterials 1 No

Ted Masselink Institute for Physik, Humboldt University Berlin [email protected] Nanostructures &

characterization 1 Yes

A.J. Nozik National Renewable Energy Lab, Colorado [email protected] Semiconductor nanostructures 1 No

Moti Segev Technion – Israel Institute of Technology [email protected] Nonlinear Optics 1 Yes

George Stegeman University of Central Florida [email protected] Optical Devices 1 Yes

Gary Wood Army Research Lab,-Sensors and Electron Devices Directorate [email protected] Electro-optics & photonics 1 No

Yong-Hong Ye Center for Collective Phenomena in Restricted Geometries, Pennsylvania

State University [email protected] Materials, photonic crystals 1 No

Reuben Collins Colorado School of Mines [email protected] Optics 1 & 2 No Jean Heremans, H.

Chen Virginia Tech [email protected] Transport properties of semiconductors 2 No

Christopher Stanton, G.D. Sanders

Univ. of Florida [email protected], [email protected]

Electronic transport theory 2

W. Van Roy, G. Borghs

IMEC, Belgium [email protected] Opto spintronics 2 No

M. Warusawithana, D.G. Schlom Penn State University [email protected],

[email protected] Materials Science 2

Giti Khodaparast Virginia Tech [email protected] Magneto-optics 2 No Yoshiro Hirayama,

Kyoichi Suzuki, Sen Miyashita

NTT Basic Research Laboratories, Japan [email protected] Transport properties of

semiconductors 2 No

W.K. Liu, D. Lubyshev, J.M.

Fastenau IQE

[email protected] [email protected]

[email protected] MBE growth 2


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Domingo Garcia, Prashant Majhi Sematech Novel gate oxides 2

Bruce Gurney Hitachi Global Storage Technologies [email protected] Magnetic Materials and

Devices 2 No

Stefan Maat Hitachi Global Storage Technologies [email protected] Magnetic Materials and

Devices 2 No

Niti Goel, W. Tsai, C.M. Garner,

P. Majhi

Intel Corp. [email protected] Molecular Beam Epitaxy

2 Yes

Wayne Holland Amethyst Research Inc. Molecular Beam Epitaxy 2 No Mike Lilly Sandia National Labs [email protected] 2 D Electron Structures 2 No

Michael Morrison University of Oklahoma [email protected] Atomic Theory 2 No Shigeo Maruyama University of Tokyo, Japan 1

Geoff Nunes Dupont [email protected] Carbon Nanotube composites 1 Christine Russell Cameron University [email protected] X-ray diffraction 2 Yes

Stuart Solin Washington University [email protected] Semiconductor devices 2 No Eric Walter College of William and Mary [email protected] Computational physics 2 No

Yong-Jie Wang National High Magnetic Field Laboratory [email protected] Magneto-optics 2 No

Jean Massies CRHEA/CNRS [email protected] Semiconductor epitaxy 2 No

Jene Golovchenko Harvard Univ. [email protected] Physics Seed No

Toshiyuki Mitsui Harvard Univ. [email protected] Physics Seed No

J.W. Tomm Max-Born Institut fur Nichtlinear Optik und Kurzzeitspektroskopie,

Berlin, Germany

[email protected] NSOM 1 No

Christoph Lienau Institut fuer Physik, Oldenburg, Germany

[email protected] NSOM 1 No

W. Ted Masselink Institute fur Physik, Humboldt-Universitat zu Berlin, Germany [email protected] Semiconductor processing 2 No

M. Schmidbauer Institute fur Kristallzuchtung, Berlin, Germany Synchrotron X-ray beam 1 No

Sophia Hayes Washington University [email protected] Supplied samples and work on physic

1 No

Elaine Li University of Texas at Austin [email protected] Supplied samples and work on physics

1 No

V.I. Klimov Los Alamos National Labs [email protected] Novel optical scanning probe microscopy Seed No

Yongcheng Liu David Battaglia

NN-Labs www.nn-labs.com Nanoparticles 1 No

Huifang Xu UW-Madison [email protected] Electron microscopy 1 No Yong Zhang National Renewable Energy Lab [email protected] Electronic and optical

properties of semiconductors: 1


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Leo Ocala Argonne Nat. [email protected] e-beam processing 2 No Leonid Golub A.F. Ioffe Physico-Technical

Institute, Russia [email protected] Spin and electronic transport 2

Eric Johnson University of North Carolina Charlotte

[email protected] Micro-photonics 1 No

C.K. Shih University of Texas at Austin [email protected] SPM and Optical measurements

1

P.M. Thibado University of Arkansas [email protected] MBE growth 1 Yunjun Wang MesoLight LLC [email protected] Colloidal nano-particles 1

Demetri Christodoulides

University of Central Florida [email protected] Photonics 1 No

Curtis Taylor Virginia Commonwealth University [email protected] Nanomechanics 1 No Georgiy Tarasov

Lashkayov Institute of

Semiconductor Physics, National Academy of Science of Ukraine

[email protected] Simulation models, theoretical predictions,

1 No

Viktor Strelchuk Lashkayov Institute of Semiconductor Physics, National Academy of Science of Ukriane

[email protected] Semiconductor physics 1 No

Steve Tung UA [email protected] DNA-based fabrication Seed Jin-Woo Kim UA [email protected] DNA-based fabrication Seed Sulin Zhang UA, Mechanical Engineering [email protected] Multiscale modeling Seed No

Andrew Wang Ocean NanoTech. www.oceannanotech.com Nanotechnology Seed No Su-Huai Wei NREL, CO [email protected]. First principle electronic

structure 1 No

Jean-Michel Kiat Ecole Centrale Paris, France [email protected] Modeling of solids 1 No Brahim Dkhil Ecole Centrale Paris, France [email protected] Multiferroics 1 No Raffaele Resta University of Trieste, Italy Electronic structure

calculations 1

Ken. Roberts University of Tulsa [email protected] Biochemistry 1 No Jan Petzelt Institute of Physics, Czech Republic [email protected] Optical measurements of

dielectrics 1

Ronald L. Halterman OU [email protected] Organic Chemistry Seed No George C. Schatz Northwestern University [email protected] plasmon mode structures Seed No James Slinkman IBM SPM Instrumentation Seed

Parameswar Hari University of Tulsa [email protected]

Sent samples to OU for AFM and STM imaging.

Seed

Stephen A. Joyce LANL ESEM imaging Seed David S. Ginger University of Washington [email protected] dip-pen lithography Seed

Dr. Jian Xu Penn State [email protected] Micro Opto Electro Mechanical Systems

1 No

David McNabb University of Arkansas [email protected] Genetics Seed No Daniel Branton Harvard University [email protected] Nanopore technology Seed No Herbert Fertig Indiana University [email protected] Theoretical calculations of 2 No


4 of 4

transport in 2DEGs René Coté University of Sherbrooke, Canada [email protected] Theoretical calculations of

meron profiles 2 No

D. Papavassiliou, A. Striolo

OU, Chem. Eng. [email protected], [email protected]

Theoretical calculations of heat transport

Seed No

Kathryn A. Moler Stanford University,

[email protected] Low-Temperature Magnetic Force Microscopy

1 No

Dr. Chee Wei Wong, Mech. Eng , Columbia University [email protected] Nano-electromechanical Systems

1 No

Prof. L. Golub Ioffe Institute Spin-Orbit Coupling in III-V 2 No

4. Strategic Plan

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CENTER FOR SEMICONDUCTOR PHYSICS IN NANOSTRUCTURES Overview: C-SPIN is an ongoing partnership between researchers at UA and OU. It is rooted in our common interest in nanoscience and in our need for a greater collaborative circle to address interdisciplinary materials science issues which are critical for both future technologies and fundamental physics. During the grant period, we will continue to improve materials science education reaching from K-12 to graduate school to the general public. Research Activities:

To develop the science needed to design and control the growth and behavior of nanostructures, we are developing shared facilities, combining efforts in sample growth and characterization, and are co-fabricating devices. This is accomplished by two interdisciplinary groups, IRG1 and IRG2, the first dealing with nanostructure arrays and the second dealing with mesoscopic narrow gap systems. While the results of these groups will affect one another, they each have separate and well-defined goals: Collective Properties of Nanostructure Arrays (IRG1): A near term goal of IRG1 is to further refine our skills in MBE, colloidal, and templated growth, which have already yielded beautifully ordered 2D and 3D arrays of quantum dots, wires, and rings. This effort has been expanded to include ferroelectric arrays. A longer term goal is to tailor a number of remarkable properties of 3D arrays: geometry dependent excited state lifetimes; improved size uniformity; tailored materials properties. Mesoscopic Narrow Gap Systems (IRG2): The demand for higher speed operation, denser memory, and increased functionality has motivated research on nanoscale electronic devices that exploit quantum mechanical effects. We use narrow bandgap materials to address these needs. Our narrow gap growth effort already boasts the world’s highest room temperature mobility in any semiconductor quantum well. These materials are ideally suited to quantum confinement and will make significant contributions to read-head technology, bio-magnetic field sensors, and ballistic transport and spintronic devices. Seed: Our Seed projects enhance interdisciplinary and inter-campus efforts within the Center. Our most successful Seed focuses on the tremendous potential for engineering surfaces to improve tribiological properties by exploiting our previous success in nano-templating. Education and Outreach:

Our efforts are designed to take advantage of existing efforts and partnerships to leverage C-SPIN’s resources and greatly extend these efforts. Historically, successful outreach efforts include RET programs, REU site programs and minority recruitment programs as well as a GK-12 effort at UA. They are supplemented by several additional outreach efforts: training opportunities and demonstration equipment for middle school and high school teachers; support of BEST robotics competitions among middle and high school students; and development and coordination of after school activities for K-5 children. C-SPIN collaborates with OKAMP (OU) and Carver (UA) programs to improve minority recruiting, retention and placement.

C-SPIN has enhanced graduate training through hands-on experience with state-of-the-art research equipment, interdisciplinary teaming, joint seminars, programs to develop entrepreneurial skills for engineers, and internships with industry. Students will be familiar with issues from crystal growth to device production. Our goal is to produce students fully prepared to drive the advancement of nanostructures in academic and industrial settings.

We continue to take pride in our K-12 and informal science outreach programs at C-SPIN. UA and OU have recently established partnerships with children’s museum networks in each state. Diversity: Operating on the principle that enhancing diversity will enhance nanotechnology, our vision is to improve diversity in the U.S. nanotechnology workforce. Our goal is to strive for 30% female and 15% minority for our graduate population by 2011. Our plan is structured in four components: targeted recruitment, exciting research opportunities, faculty and student mentors, and career placement. Targeted Recruitment - We seek to attract a critical mass of minority students who are exceptionally academically qualified. Tactics include: utilizing our NSF/REU programs on nanoscience; our established partnerships with the Louisiana and Oklahoma LSAMP programs; and the Mississippi and Texas members of the UA George Washington Carver Project. We are also submitting a NSF PREM

4. Strategic Plan

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proposal to link Fisk, Vanderbilt, and the Oklahoma/Arkansas CSPIN MRSEC. The PI is Arnold Burger at Fisk. The idea is to adapt a program that has been very successful in bridging MS students from Fisk to Vanderbilt, and to extend that alliance to CSPIN. Exciting Research Opportunities -This is our strongest suit. We continue to develop a team approach which enhances creativity and is proving to be a good fit to a broader spectrum of students. Faculty and Student Mentors. We build community and foster understanding through our research and industrial work groups, where students share their perspectives on personal and professional issues. Career Placement - We view our educational program as part of an education –workforce continuum. Tactics include a co-op experience and annual student meetings with visiting industrial scientists. Complementing the above effort to increase student diversity, we are working to increase the number of minority faculty in nanotechnology at our universities. Murphy is a PI on an NSF Advance project to recruit and retain female academics in the sciences and engineering within the Big 12. Salamo led the 2008 submission of a UA Advance grant and is part of an effort to re-apply again this year. In preparation, UA is hosting a state-wide Advance meeting in March, 2009. Shared Facilities:

C-SPIN has leveraged the comprehensive equipment base of its investigators as well as its shared facilities. Here the goal is to extend the use of this equipment, not only to members of C-SPIN at both campuses, but to other researchers in Oklahoma and Arkansas. In other words, to change the culture at both universities to catalyze interdisciplinary research and education. Both facilities are now heavily used on both campuses and play an important role in University research and proposals. Development:

C-SPIN’s vision and mission were established and changed over the course of the original MRSEC funding cycle and part of this current cycle through interactions on many different levels. The proposals themselves were developed through intense discussion between all involved scientists. Now funded, we continue this process through weekly scientific and managerial interactions (video and telephone conferences) as well as face-to-face meetings through out the year. Furthermore input from the Board of Visitors is solicited at mid cycle meeting. Graduate students and post-docs are also involved in this process through informal interactions through the above channels as well as through face-to-face meetings at one of the campuses. New proposals involving C-SPIN and other faculty researchers are strongly encouraged and supported, especially when they involve the two campuses or multiple departments. A prime example of that was our successful NRI-funded proposal on ferro-electric memory devices involving TI. This was catalyzed by Salamo and now involves theory contributions from Belliache (UA) and TEM characterization from Johnson (OU). Assessment: All forms of C-SPIN funded projects, both research and outreach, are assessed to monitor progress and to see if the goals are being met. This is done unofficially with IRGs and Outreach groups on a regular basis to make sure collaborations are progressing appropriately e.g. samples, papers, etc. are being worked on in a timely manner and and more formally as part of our annual evaluation. Metrics associated with scientific progress are mostly based on scientific output, most notably peer-reviewed papers as well as the ability of collaborations to effectively share and develop resources from equipment to students and post-docs. Success stories are shared, so that other researchers can learn ways to successfully collaborate within the center and with other materials based efforts at either campus. Outreach efforts are assessed by the numbers of people they reach and the excitement they generate within the targeted audience. We are working with other MRSEC centers to share and evaluate MRSEC-wide assessment methodologies Summary:

The C-SPIN MRSEC, founded on our separate research, driven by our common needs, and aided by our industrial and international partnerships, is in an excellent position to make a significant impact in science on the national scale and in education and economics on the regional scale.

5. IRG-1

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IRG-1 Faculty: Johnson, McCann, Mullen (OU); Bellaiche, Chakhalian, Fu, Manasreh, Peng, Salamo, Tian, and Xiao (UA); 6 postdocs, 6 graduate students; Partners: Humboldt and Carl von Ossietzky Universitäts, (Germany), University of Central Florida, Université de Franche-Comte (France), and the University of Arkansas at Pine Bluff, an HBCU. Focus: Based on the observation that all bulk material properties depend upon the spatial order of identical units (i.e. atoms or molecules), the two overarching goals for this IRG are: (1) Growth of Organized Arrays - Refine and apply a host of fabrication techniques to synthesize

ordered arrays of nanoscale synthetic units (dots, wires, rings, dot molecules, etc.) for a range of material systems that will allow exploitation of their coherent and collaborative behavior.

(2) Collective Behavior - Combine these growth techniques with modeling capabilities to understand, predict, and tailor material properties.

Progress in Research: Johnson and Salamo investigated InAs quantum dot (QD) formation in arrays of GaAs ring-like nanostructures. Ga droplet epitaxy was used to first form GaAs ring-like nanostructures. Then InAs was deposited to obtain InAs QDs by self-assembly inside the holes of the ring structures. Optically, they observed regularly spaced bands in the photoluminescence and state filling under increased excitation power. However, they demonstrated that these bands do not represent excited states of a single ensemble of dots, but are separate QDs with individual ground state energies, which

are coupled through the GaAs ring structure on which they form. In another direction, despite achievements in self-assembled QDs the ability to precisely order them has remained challenging. Salamo’s group demonstrated that by varying the substrate temperature at which Ga droplets form and by varying the InAs deposition, they are able to control the configuration of QDs. In order to accomplish this they investigated the progression of InGaAs QDMs from quad-QDMs to QD pair rods (Fig.2). By varying the temperature they controlled diffusion and the Ga droplet size and the formation of InAs QDs was observed to occur in two stages. First, two dots form along the [01−1] direction and their separation is determined by the droplet size. Then, materials from the dots diffuse to either side in an effort to minimize strain in the [011] direction.

In addition, Salamo and German collaborators recently

reported for the first time, the coherent interaction between quantum well excitons and surface plasmon polaritons to precisely control the exciton-plasmon interaction. For example, in preliminary works they used a GaAs/AlGaAs quantum well heterostructure with several parallel gold strips on top, each 360 nanometers wide, leaving 140-nanometer gaps between them. They then probed with an infrared laser onto the periodic grating and measured how much of the light was reflected. From reductions in this reflection, they could tell how much of the light was converted into plasmons on the top and bottom surfaces of the gold strips. By varying the angle of the incoming laser beam, they changed the wavelength of these plasmons (experiment/theory shown in Fig.3). Tuning the plasmon wavelength to near the exciton resonance in the quantum well at 810nm, they observed a sharp decrease in the reflected light. This indicates that the plasmons at the bottom of the strips interacted with excitons in the semiconductor.

Fig.3. (left) Reflectivity spectra reveal HH/LH QW resonances; (right) Spectra obtained from the coupled-oscillator model. Red dash-dotted lines indicate the SPP and QW HH and LH dispersions.

Fig.1. XTEM image of a nanoring. The nanoring can be seen around area A and B. Between these areas, a nanohole indicated by C is visible. In the right side of the nanohole region, a dark bulge contrast represents the shape of a QD.

Fig.2.(a)AFM image of quad -QDMs/QD-pair rods at 480 and 520 °C. (b, e) -magnified view and (d, e) - 3D views.

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Meanwhile Manasreh’s group investigated both hexagonal and cubic AlN/GaN superlattice structures. This system exhibits a large conduction band offset (up to 1.7 eV) that allows one to optically design structures with intersubband transitions in the spectral ranges of 0.7 to 30 µm. The photoconductivity shown in Fig. 4 was observed for the first time in cubic AlN/GaN superlattices structures, which demonstrated the applicability of reaching the near infrared spectral region using the non-polar cubic phase. This is result is significant in that this enables elimination of the large electric fields experienced in the non-centrosymmetric hexagonal phase, which affect the optical properties. Due to the miniband of these devices, broad band detection up to 4 µm was achieved, which opens the door for additional opportunities in applications such as free space optics and chemical detection.

Xiao was also able to observe and understand the enhanced blinking behavior of single Mn-doped ZnSe quantum dots synthesized by Peng’s group. They also measured their radiative lifetimes. The slow decay rate in millisecond time scale is identified as the radiative decay from the 4T1 metastable excited state of Mn2+ ions embedded in the ZnSe nanocrystals. Interestingly they were able to determine the size dependence of the radiative decay rates shown in fig.5. Resolving the mechanisms of radiative lifetimes in the Mn-doped ZnSe d-dots, especially their size dependences, can be very important for the applications of such d-dots in biological labeling, LEDs, and lasers.

Xiao and Peng also used an optical reflector to modify the blinking statistics of a single CdSe quantum dot. By tuning the distance between the reflector and the quantum dot, the blinking statistics were significantly modified and even controlled.

Meanwhile, Tian and Xiao investigated the second-harmonic imaging of ZnO micro/nano structures as well as whispering gallery optical modes. They were able to get the information on structure changes and nonlinear coefficients of the material adding to the results reported previously.

In another direction, Chakhalian and Xiao have developed an Arkansas method to control defect states, which is capable of a marked reduction of the defect concentration. Using a HCLNO based wet-etch procedure, they were able to obtain an atomically flat TiO2 terminated surface of quality equivalent to or better than that of the conventional BHF method (Fig.6). By applying the combined power of PL and XAS, they were able to identify and monitor the complex evolution of oxygen defect states and Ti valence at the surface and near-surface layers. From a practical point of view, they have demonstrated a method to control and reduce the electronic and defect states at the surface. They have also shown that PL spectroscopy can be used as a remarkably sensitive tool to examine the nature of these states. To fully appreciate the importance of having a substrate with controlled defects we performed

Fig.5.Measured radiative lifetime components near 580 nm for different size Mn-doped ZnSe d-dots. (a) The slow decay component from Mn2+ ions in ZnSe crystal field; (b) the fast decay components due to the ZnSe emission at 420 nm (square dot curve) and due to host trap states or self-activated emission of ion pairs at longer wavelength (640 nm) triangle dot curve.

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Fig.6. The surface quality of SrTiO3 obtained by the new ‘Arkansas procedure’ vs. the conventional BHF based method showing the smoothness of the surface (<80 pm) and the level of surface defects at 10 times lower than compared to BHF.

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XAS spectroscopy at the Ni L2 edge to determine its valence for the 2 cases when the LNO layer is grown directly on the treated substrate and when we introduced 2 unit cell buffer layer of LaAlO3 (here Al cannot change its valence). The results unambiguously confirm that a substrate is not a passive layer but instead it can efficiently modify the electronic structure of a transition metal ion. In the case of nickelates nickel changes its normal valence of Ni3+ towards Ni2+. These experimental findings will have particular significance for the growth of high-quality ultrathin complex oxide heterostructures.

Bellaiche has investigated features of low-dimensional ferroelectrics. For example, recent studies on Pb(Zr0:2Ti0:8) PO3/SrRuO3 superlattices has revealed many new exciting effects that provide a new way to a controllable manipulation of the polarization on an ultrafast time scale. However, the mechanisms responsible are a mystery, and their microscopic origins are completely unknown. Bellaiche’s group investigated the nature of such dynamical coupling in nanoscale ferroelectrics using a first-principle-based technique to investigate dynamical coupling between polarization and picosecond time-scale strain pulses in ferroelectric nanolayers. Two different dynamical mechanisms were found. The first mechanism, homogeneous dipole patterns, is governed by the ultrafast soft-mode dynamics. It mostly modifies the dipoles’ magnitude, and leads to a polarization only weakly changing and following the strain pulse via an ‘‘usual’’

coupling law. On the other hand, the second mechanism occurs in highly inhomogeneous dipole patterns, is characterized by a large change in polarization and by a time delay between polarization and strain, and is governed by the ‘‘slower breathing’’ of dipolar inhomogeneities. In this second mechanism the coupling occurs through nanobubble’s ‘‘breathing’’ (the change of nanobubble size due to nanobubble wall dynamics) (Fig.7). The latter mechanism provides a successful explanation for recent puzzling and technologically promising observations of a large dynamical change, and time delay, of the polarization.

Meanwhile Fu performed ab initio based studies to investigate, for the first time, the collective response to curled electric fields, and the vortex switching mechanism, in ferroelectric nanoparticles made of Pb(Zr0:5Ti0:5)O3 solid solution. Simulations revealed a novel mechanism that governs the switching of FE vortex. A curled electric field, of only z-axis vorticity momentum, was shown to lead to the unexpected formation of a lateral vortex, manifesting macroscopically the balance of various microscopic interactions. His group demonstrated that the strong correlation between the original vortex and the new lateral vortex plays a critical role for vortex reversal. On the other hand, the -G and G domains never coexist during switching, and the switching mechanism by coexisting domains is not valid. Moreover, based on the findings that formation of lateral vortex is the

Fig.7. Upper pictures: Snapshots at different times of a (x, y) cross section of the dipole pattern in a PZT film initially possessing low-density nanobubbles. Red (respectively, blue) areas show areas with dipoles pointing up (respectively, down) along the z direction. These data correspond to the intermediate strain pulse and an initial nanobubble volume of 5.3 nm3. Lower pictures are for highdensity nanobubbles) with an initial nanobubble volume of 59.7 nm

Fig.8. Toroid moment G and its magnitude (empty symbols) and internal U energy per 5-atom cell (solid dots) in a d =19 nanodisk under: (a) S = 0.25 mV/A2 curled field; (b) combined Eh = 1.9 V/nm homogeneous field and a S = 0.04 mV/A2 curled field.

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major energy barrier for vortex switching, and that this lateral vortex can also occur by use of homogeneous field, he described an effective approach that is able to reduce substantially (by 600%) the magnitude of the switching curled field. Finally, we believe that the microscopic insight and energetics will also be of immense value. Fig. 8 depicts the collective behavior of the toroid moment G, evolving during simulation as a function of MC sweeps (denoted as n, in units of 200), in the d = 19 disk under a curled field of S= 0:25 mV/A2 that has an opposite vorticity with respect to the initial FE vortex. One key finding is that the vortex reversal process is predicted to consist of three evolution phases in which the system displays distinct dipole behaviors. Both the investigation by Bellaiche and Fu are being pursued by Salamo’s group, who has experimentally grown both ferroelectric superlattices and dots using MBE.

5. IRG-2

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Faculty: Doezema, McCann, Mullen, Murphy, Santos, Shi, Yang (OU), Salamo (UA), Xie (OSU), 6 postdocs, 8 graduate students. Partners: Amethyst Research Inc., Humboldt Universität (Germany), Ioffe Technical Institute (Russia), Intel Corp., NTT Basic Research Laboratories (Japan), Tohoku University (Japan), University of Florida, UT Austin, SUNY-Albany. IRG 2 focuses on mesoscopic narrow gap systems, including both III-V and VI-VI materials. Charge carriers in semiconductors with narrow bandgaps have several attributes that are highly desirable for nanoscale devices such as high mobility, small effective mass, and large spin splitting. These attributes imply higher operating temperatures for ballistic transport devices, stronger quantum confinement for low dimensional devices and greater sensitivity of magnetic field sensors. Moreover, enhanced spin effects provide an additional opportunity for spintronic devices that may provide new routes for computation and data storage. In addition to these more longer-term applications, narrow gap materials can be applied to issues of current commercial importance in infrared technology and high-speed electronics. Capitalizing on our previously demonstrated successes in MBE growth, optical experiments, and transport studies, IRG 2 emphasizes the growth of high-mobility systems in narrow gap materials, integrates fundamental studies of electron and spin transport in conjunction with collaborators in Germany, Russia and Japan, and addresses their technology applications with industrial partners such as Intel and Amethyst. Spin Related Experiments, Electrical Devices and Associated Theory: Spin Relaxation Optical Measurements: A key element of devices that manipulate spin for potential computational or storage applications, is a spin lifetime that is sufficiently long for the spin to be manipulated and/or detected. Narrow gap semiconductors are well known for a large spin-orbit coupling that potentially enables significant spin manipulation. The advantages of large spin-orbit coupling, however, come at the price of short spin lifetimes. To date, there have been numerous time-resolved spin relaxation studies of wider gap materials, principally GaAs, however there have been only single sample studies in InSb, reporting widely varying lifetimes for comparable samples. Salamo, Murphy, and Santos have been collaborating to remedy this lack of systematic time-resolved experiments. Their plan starts with bulk InSb samples and evolves towards understanding the dominant spin relaxation mechanisms in InSb quantum wells (QWs). In the last year, they have performed a systematic infrared pump/probe study of the spin lifetime in bulk InSb as a function of carrier density and temperature. The experimental results confirm that below 77K, the Elliot-Yafet mechanism dominates the spin relaxation and importantly, that at reasonable carrier concentrations of 5x1016cm-3, the lifetime remains a respectable 4-10ps, translating to distances of microns over which spins are preserved. Spin-Orbit Transport Experiments: The optical measurements of spin relaxation are complementary to ongoing magneto-transport measurements of spin-orbit coupling by Murphy and Santos. The experiments focus on the extraction of spin-orbit coupling coefficients from weak-localization experiments at low temperatures and low magnetic fields with theoretical support from Prof. Leonid Golub of the Ioffe Institute. Since August 2008, Murphy has been working with staff at the Penn State Nanofab and the UCSB Nanotech to develop new InSb gate fabrication recipes. The goal is to tune the spin-orbit coupling in-situ by means of these external gates. In parallel, Santos and collaborators in Japan (NTT and Tohoku University) are building on earlier experiments in GaAs to explore the coupling of electron spins and nuclear spins in InSb QWs. Theory and Modeling of Spin-Orbit Devices: The spin-orbit transport and relaxation studies are complementary to a new project, a joint collaboration of Murphy, Santos, and Mullen, to design InSb/AlxIn1-xSb QW structures with maximally tunable spin-orbit coupling and to investigate spin-orbit coupling in bilayer systems. Pingenot, a new postdoctoral researcher working with Mullen, has adapted a suite of software to calculate the spin-orbit coupling for heterostructures grown in IRG 2. This will greatly aid design optimization. Mullen has also adapted atomic scattering theories to model devices in magnetic fields. The experimental work on spin-orbit effects and devices is also supported by Xie, an expert in the theory of spins currents in nanodevices. In the past year, Xie has investigated the existence of a persistent spin current without an accompanying charge current in a semiconducting mesoscopic ring with a spin-orbit

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interaction, a follow up to his studies of quantum wires. This work includes both theoretical aspects and scenarios for experimental verification. While experimentally challenging, Xie predicts that the spin currents may be detected by the electric fields they generate, with the largest amplitude signals arising in narrow gap materials due to their small effective mass, large g-factor and large spin-orbit coupling. Similarly his recently published work on the Nernst and spin Nernst effects in semiconductors with large spin-orbit coupling, indicates that the coupling between thermal gradients and the resultant voltage and spin current are most pronounced in systems such as InSb, suggesting a host of future projects for the IRG 2 experimentalists. InxGa1-xAs based Electrical Device Structures: Narrow gap semiconductors, particularly InxGa1-xAs, InAs, and InSb, are recognized as having the potential to replace Si in some transistor applications. Unlike SiO2 on Si substrate, however, there are no stable native dielectrics on III-V semiconductors with a high-quality interface and thermodynamic stability. This has motivated a variety of attempts to prevent Fermi level pinning while maintaining a high-quality interface. With Intel and other collaborators (Univ. of Texas at Austin, SUNY Albany), Santos explored the integration of several promising high-κ dielectrics with InxGa1-xAs/InxAl1-xAs structures grown on InP substrates. The dielectrics included HfO2 with interfacial passivation with Si and Ge, and ZrO2.

High-mobility Hole Systems: CMOS logic applications require that high-mobility p-channel FETs are integrated with high-mobility n-channel FETs. Since the highest electron mobilities have been demonstrated in InSb QWs, two approaches toward realizing integration with hole systems have been followed. First, Santos has fabricated the first p-type InSb QWs, with mobility of ~700 cm2/Vs at room temperature. The effective mass in these structures was measured in cyclotron resonance experiments (See Fig. 1) by Doezema and Santos to be as low as 0.04me, a value explained by calculations performed by collaborators at the University of Florida. Second, Santos has worked with Amethyst Research Inc. to grow n-type InSb QWs on Ge substrates. The highest mobility for holes in a QW is reported for a Ge QW (~3000 cm2/Vs). Both approaches toward integrated n- and p-type QWs continue to be investigated. Growth and Fabrication of Narrow Gap Optical Devices III-V Interband Quantum Cascade Lasers: Interband cascade (IC) lasers take advantage of broken gap alignment in type-II quantum well (QW) structures for cascaded photon emission without involving the fast phonon scattering that limits intersubband quantum cascade lasers. These IC lasers are emerging as efficient mid-infrared laser sources particularly in the 3–4 µm region with continuous-wave (CW) operation at thermoelectric cooler temperatures. Yang, Santos, and Johnson demonstrated IC lasers made from InAs/AlSb/GaSb epilayers on a plasmon waveguide structure grown on an InAs substrate. This new type of IC laser, with broad-area mesa stripes, was operated in CW mode at a maximum temperature of 150 K. As shown in Fig. 2, the emission wavelength at 150K is 5.9 µm, which is now the longest wavelength achieved by III-V interband diode lasers. This accomplishment

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demonstrates the potential of these plasmon waveguide IC lasers to work at longer wavelengths. IV-VI Infrared Detectors and Emitter: In addition to research on III-V materials, IRG 2 has a parallel effort focused on the growth and optical applications of narrow gap IV-VI materials. McCann and Shi operate independent MBE chambers for the growth of PbSe-based heterostructures. This year McCann reported the growth of PbSe quantum dot chains with a nominal size of 60 nm arranged on a Si substrate preferentially along the <110> direction. McCann also addresses the application of mid-infrared lasers to detection of biological agents in respired gases. This interest in portable mid-infrared gas sensing is shared by Shi, who recently reported the fabrication of PbSe micro-rods on (111)-oriented barium fluoride (BaF2). The micro-rods scattered throughout the surface had diameters in the range of 14-18 µm and lengths between 40-300 µm. Related micro-rods from PbSe/PbSrSe structures yielded a 64× enhanced PL intensity compared with the bulk sample. Improved emission power signifies that these microstructures are robust in nature and crucial contenders for portable opto-electronic sensors for trace-gas sensing.

Using more standard geometries, Shi has also reported the fabrication of an electrically pumped PbSrSe/PbSe edge-emitting laser. Pulsed laser emission was observed at 5.2 µm at temperatures as high as 158 K with a maximum of 40% duty cycle. Shi investigated conditions that can enhance the lasing action of these PbSe materials. His group has performed photoluminescence (PL) studies of PbSe thin films passivated by high-purity O2 at different annealing temperatures. The PL intensity increased by more than two orders of magnitude at 4.5µm after annealing at 3500C. In recognition of recent advancements in IV-VI growth techniques which have led to a renewed interest in using Pb1-xSnxSe for mid infrared detector fabrication, Shi has worked towards a greater understanding of their potential competitiveness especially in regards to material defects and device performance. Summary: Progress was made in many focus areas of IRG 2 during the third year of the project. Center support has resulted in productive collaborations within partner institutions, between partner institutions, and with external collaborators.

5. Seed Funding and Emerging Areas

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For CSPIN to remain topical, we must respond to opportunities. To this end, about 10% of the budget is set aside for seed funding. New areas to pursue are determined annually by the Executive Committee from submissions by CSPIN or other UA/OU faculty based on the quality of the proposal and overlap with Center interests. Seed areas target higher risk projects and emerging areas of interdisciplinary research; however, industrial outreach or innovative educational ventures are also considered. Seeds by junior faculty or that establish links with other disciplines have priority. Nano-Textured Surfaces For Tribological and Opto-Electronic Applications M. Zou, (UA Mechanical), and M.B. Johnson (OU Physics); 2 Grad. Students Focus: to study the mechanical and tribological properties of nano-textured surfaces, and to understand the effects of surface nano-texturing on friction, lubrication, and wear. Motivation: Just as nanostructures display electronic and optical properties that are revolutionizing many areas, they also demonstrate novel mechanical and tribological properties which hold promise for significantly reducing friction, wear, and energy consumption in head-disk interfaces, mechanical seals, MEMS/NEMS, and mico- and nano-fluidic applications. Recently it has been shown that NanoTurf (a nano-engineered surface with hydrophobic nano-posts) can produce a low flow friction surface with 40% drag reduction. Much of the reduction is gained by reducing the micro-scale posts to nano-scale. A recent study also showed that the mechanical properties of materials are size-dependent, e.g. the hardness of Si nanoparticles is 4 times that of bulk Si. These unique nano-scale properties provide tremendous potential for engineering surfaces to improve tribological properties of moving components. Currently, micro-textured surfaces have been widely used in computer hard drives and are very effective in increasing load carrying capacity and reducing friction in mechanical seals and thrust bearings. Proposed Research: In this SEED we will combine the template fabrication techniques (Johnson) with the metal induced crystallization techniques (Zou) to fabricate nano-dots, pillars, rings and pores out of a wide range of materials. (See figure for examples.) The mechanical and tribological properties of these nano-textured surfaces will be studied using state of the art nanomechanical and tribological characterization tools at UA (Zou). Accomplishments: To date we have made much progress associated with the mechanical and tribological properties of our nano-dots. Zou and Johnson have had two papers published in Tribology Letters and a third paper in Nanotechnology. As well, the collaboration with Zou, a theorist Sulin Zhang (now at Penn. State) along with Johnson at OU is now funded through a proposal entitled “Tribology of Nano-patterned Surfaces” funded by the NSF (CMS –Materials Design and Surface Engineering). This work focuses on the mechanical properties of Ni nanodot arrays fabricated using aluminum oxide (AAO) templates in conjunction with thermal evaporation. The arrays are fabricated at OU while the mechanical testing is done at UA and the structural characterization, mostly AFM and SEM, is done at OU. We have performed nanoindentation studies to understand the mechanical properties of Ni nano-dot patterned surfaces (NPSs) on Si substrates (Fig. 1), developed a finite element analysis-based multi-asperity contact model for NPSs, and experimentally verified the model. Fig. 2 shows excellent match between our experimental data and the modeling results. This is the first time that a multi-asperity contact model is verified at the nanoscale. The verified model can provide design guidance for NPSs used in mechanical applications. A manuscript based on this work has been submitted to Tribology Letters.

Fig. 1 SEM image of a Ni NPS with a nanoscale indent.

Fig. 2 Multi-asperity contact model verified by nanoscale experiment.


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Nanopore TEM image and thickness profile. (A) A ~4 nm pore made by ion beam sculpting in silicon nitride membrane. (B) STEM image with position numbers. (C) Thickness vs. position number estimated by EELS.

We have also studied the friction and deformation of a Ni NPSs in detail and observed the proportionality between the frictional force and the real area of contact at the nanoscale (Fig. 3). Our results show the following: • Ordered Ni nanodot patterning reduced the adhesion forces and coefficients

of friction up to 92% and 83%, respectively, compared to those of the smooth silicon surface.

• Our Ni nanodots have a smaller elastic modulus, but a larger hardness than that of bulk microcrystalline Ni reported in the literature. The estimated critical shear stress to initiate plastic deformation in the Ni nanodot was found to be close to the theoretical shear strength in dislocation-free single crystal Ni.

We are in the process of developing a friction model for NPSs. The results of this research will provide a fundamental understanding of the nanotribological properties of NPSs which are critical for the rationale design of durable, low-adhesion, and low-friction surfaces for miniaturized systems. Characterization of Solid State Nanopore 3D Structure by High Resolution TEM J. Li (UA Physics), Mourad Benamara; 1 Grad. Student Focus: to characterize the 3D structure of solid-state nanopores by high resolution transmission electron microscope (TEM). Background: Solid-state nanopores can be used to detect the structure of DNA and protein at the single molecule level. Low energy noble gas ion beams have been used to fabricate nanopores in silicon nitride in Li’s lab as shown in Figure (A). The image in Figure (A) tells us the diameter of the nanopore, but the thickness profile as well as the composition of the nanopore remain poorly characterized. The nanopore thickness determines the spatial resolution of a nanopore sensing a single molecule. The nanopore composition and structure are correlated to their electrical noise properties that also limit the sensing resolution of the nanopore. The new high resolution FEI Titan transmission electron microscope (HRTEM) purchased in Professor Salamo’s lab can measure the thickness and composition profile of the solid-state nanopores by Electron Energy Loss Spectroscopy (EELS) and STEM EDX. Research: In collaboration with Professor Salamo, using the new FEI Titan HRTEM, we plan to study the thickness as well as the composition profile of the nanopores fabricated with different sets of parameters, modified at variety conditions. This study will enable us to develop high resolution solid state nanopore sensors.

Accomplishments: Work is proceeding on this collaboration. The first elements are being put in place. A special TEM sample holder that can accommodate nanopore chips has been successfully modified and tested. Figure (B) and (C) show the initial testing of measuring the thickness profile of a nanopore. A series experiments have been planned for this study.

Fig. 3 SEM images showing contact deformation of a Ni NPS at the nanoscale.


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Fundamental Studies of Model Molecular Plasmonic Devices; L.A. Bumm (OU Physics, R.L. Halterman (OU Chemistry); Partial Post-Doc Focus: to study the interaction of adsorbed dyes with nanoparticle plasmon resonances and their plasmon mediated interactions (e.g. FRET) with spatially remote dyes. Background: Molecular plasmonics is an emerging field of scientific investigation at the intersection of photonics, chemistry, and nanotechnology. Photonic energy can be manipulated with subwavelength control and interact with adsorbed molecules. Research: Flat gold nanoparticles are used as plasmonic platforms on which spatial molecular patterns can be created. Natural patterning methods, such as sequential self-assembly, or deterministic methods such as e-beam lithography and scanning probe lithography are planned. The molecular platform is the alkanethiol SAM. The dyes are synthesized with alkanethiol tethers to facilitate incorporation into the matrix SAM. We use a convergent approach for the synthesis, yielding a library of tether lengths and dyes that can be coupled for these studies. Accomplishments: Preliminary results showing measurements of optical absorption of malachite green adsorbed to a single nanoparticle are shown above. In this experiment the light scattering spectrum of a single FGNP was measured before and after adsorption of tethered malachite green. The log ratio of these two measurements shows the absorption spectrum of the adsorbed dye. Other effects present are due to changes in the effective refractive index of the FGNP environment by the monolayer. Subsequent plasma cleaning returns the FGNP to its initial spectrum (not shown). These preliminary results from MRSEC seed support led to funding for this project NSF DMR-0805233 (2008-2011). Ion Transport in Polymer and Organic Liquid Electrolytes R. Frech, R. A. Wheeler (OU Chemistry); Partial Post-Doc Focus: to elucidate the mechanisms of ion transport in polymer electrolytes and organic liquid electrolytes. Ionic conductivity in both families appears to be governed by very similar mechanisms. Developing a molecular-level picture of these mechanisms will provide a molecular basis for rational design of polymer electrolytes for commercial lithium ion battery applications. Background: At present, ion transport in polymer and organic liquid electrolytes is still poorly understood at the molecular level, and conductivity data are fit to empirical functions that unfortunately yield little physical insight. We have recently discovered a very powerful scaling technique that leads to a remarkably simple picture: ionic transport is governed by a single, primary activated process driven by molecular motions that modulate the conductivities through dielectric relaxation Proposed Research: We will extend this exciting technique to technologically important organic electrolytes (e.g. alkyl carbonates) and polymer electrolytes (e.g. poly(ethylene oxide)-based systems). A critical first step will be to unravel the complicated interdependence of ionic conductivity on temperature, salt concentration and system dielectric constant. Accomplishments: We have successfully demonstrated the validity of our scaling technique for two series of organic liquid electrolytes (linear alcohols and ketones), using a large variety of different salts. We very recently identified the role of the dielectric constant and its dependence on temperature and salt concentration in our systems.

Light scattering absorption spectra of MG adsorbed on FGNPs

6. Education and Human Resources

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C-SPIN’s goal is to reach all levels of education, K-20. Our activities include:

Research Experiences for Teachers: In the summer of 2008, C-SPIN participated in RET activities at a reduced scale. At OU one RET was partially funded and they along with 4 separately funded RETs worked in C-SPIN labs. The C-SPIN funded RET worked on developing Nano-based high-school-level lab modules to explore the effect of surface roughness and chemistry on wetting. The separately funded RETs continued work on “Crime Scene Investigation” materials, developing modules on hair and fiber analysis and soil analysis. The CSI material was used in Tecumseh Middle School, which is 40% Native American, Norman High School and Bishop McGuiness High School. These modules were also used in minority outreach (below). Research Experiences for Undergraduates: Both UA and OU Physics Departments have a history of successful NSF REU summer programs, hence while C-SPIN is called upon to provide a number of openings in research labs, there is need for only minimal financial support. In 2008 there were 8 REU students in CSPIN related research at OU and 10 at UA.

K-12 Outreach: A partnership with SeeS (Sooner Elementary Engineering & Science) from the College of Engineering at OU and the Community After School Program (CASP, Inc.) from the City of Norman. brings science to life for children at Wilson Elementary School in Norman. We leveraged this effort with “Science Zone,” a program to teach science fundamentals through a series of informal sequenced, concept-building investigations for 4th and 5th graders. This involved adapting the activities to older children and including computer aided supplements. The college-student volunteers who present the activities are drawn from the Society of Physics Students at OU, and include 50% female participation plus a part-time female coordinator. C-SPIN continues to take pride in our success attracting young girls aged 6-11 to participate in SeeS. This year we developed small group activities to be used by CASP during the year at any Norman Elementary School. These activities help the CASP program meet their Science education criteria. GK-12 K.I.D.S. (“K-12, I Do Science”) The National Science Foundation (NSF) GK-12 program designed to improve math and science education for middle school students in Arkansas earned “The Media Award” from the NSF in large part for the production of a video about the university effort and results. The award is for “Bringing national prominence to the GK-12 program”. The video is structured as a special news bulletin on the “Crisis in Education in America” – about the decreasing number of young students, and especially the low number of female and minority students, who are choosing science and engineering as a career and the dangerous consequence to America as the world’s innovation leader. The national academies, private sector, government agencies and academic institutions all share a growing realization that innovation is the key to key to global competitiveness, economic strength, and national security. Our leadership depends on our ability to produce the next generation of innovative scientists and engineers who create the best ideas for new products and then put into the marketplace. Recognizing the power of an investigative approach to reach this goal, the University of Arkansas NSF GK-12 program has seized this opportunity to transition the current education approach to one that leads to greater science and technology and innovative skills and corresponding career interests for students in Arkansas middle schools. The Arkansas program called “K-12, I Do Science” or KIDS, is based on the learning through doing paradigm, and is presented to middle school teachers and to their students by practicing scientists and engineers. Graduate students, guided by their passion for science and their research emphasis in nanoscience (an ideal match to the Middle School emphasis on the life and

2008 RET: Minority and 1st generation engineering students watch levitation of a HiTc superconductor as part of the BP High School Engineering Academy at OU.


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physical sciences) are carefully trained to work in partnership with middle school teachers. They bring an approach to the classroom that emphasizes student learning through their wonder of how things work and their pursuit of the answer to a scientific mystery. The effort is a partnership between Fulbright College, the College of Education, and the College of Engineering. This year there are 10 fellows working with 19 science and math teachers. The program draws fellows from science departments across the university including: physics, chemistry, biochemistry, biology, microelectronics and photonics, engineering, and mathematics. The teachers come to the program from Fayetteville, Springdale, Rogers and Bentonville. Fellows will spend approximately 10 hours each week in the middle school classrooms using inquiry instruction along with the teacher to facilitate the learning of science and math and expose the students to the exciting world of being a scientist. In addition to their role in middle school education, graduate students in science, engineering, and mathematics also acquire the skills that broadly prepare them for professional and scientific careers. Through interactions with teachers and students in Northwest Arkansas Middle Schools and with other graduate fellows and faculty from, graduate students can improve communication, teaching, collaboration, and team building skills while enriching STEM learning and instruction in K-12 schools. Through this experience, explaining science to young students, graduate students also gain a deeper understanding of their own research and the ability to explain it in a clear and exciting manner to others.

Informal Science Education: Museum Outreach: We have established working partnerships with the Oklahoma Children’s Discovery Network and the Arkansas Children’s Discovery Centers, which offer a combined consortium of eight science museums. In continuing efforts to support this museum network, we have summer plans for C-SPIN to work with, train, and support museum staff/volunteers in the set-up and presentation of currently owned educational kits.

Pre-school Outreach: CSPIN faculty developed modules and visited first grade, kindergarten, and pre-K classrooms. The modules covered simple concepts including: “Liquids and Solids,” “What is a gas?” “Clocks and Time,” “Rainbows, Colors and Light,” and “How does electricity work.” Faculty also gave talks at local high schools on “Introduction to Quantum Mechanics,” and “Levitation.”

Minority Outreach: Louis Stokes Alliance: Acting as graduate recruiter for the UA microEP and Physics programs, Vickers has established an active partnership with the UA Graduate Recruitment Office to develop long-term relationships with the LS-LAMP organization (Louis Stokes Louisiana Alliance for Minority Participation) and the Mississippi and Texas institutional members of the UA George Washington Carver Project. OU has established ties with the re-emerging OKAMP [OKlahoma (Louis Stokes) Alliance for Minority Participation] project. All OU C-SPIN personnel have agreed to be available for students needing mentors with interests in center research. One OKAMP student worked with Johnson during the reporting period. One graduate student, working with Bumm, is sponsored by the NSF-LSAMP Bridge to the Doctorate program. REU recruiting: Both campuses continue a vigorous effort to recruit minority students to their REU programs, through targeted mailings and campus visits.

In-Reach: Undergraduate: Bumm and Johnson, have continued their newly-designed sophomore level course in nanotechnology. The course offers both classroom and lab experiences with the objective of creating accessible learning experiences for younger undergraduates in a field of study often reserved for graduate students. We also recently received a grant of $1.6M from the Howard Hughes Medical Institute to support an experiment called “STUDIO” or Science and Technology Undergraduates Developing Interdisciplinary Research. The program is led by Professor Salamo. Here students are guided by faculty members from multiple departments and work at the leading edge of science using state-of-the-art methods and


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equipment. For example, imagine a chemistry major designing and growing colloidal quantum dots; a physics student characterizing the photoluminescence of the structure; while a student in biology is using the quantum dot as a tag to image DNA, and the three of them are analyzing the observed behavior. This was the first year of a four year program. Graduate: One graduate course on Nanofabrication was present by Professor Salamo. It gives our students hands-on training with nanoscale fabrication facilities.

Evaluation and Assessment: To fulfill a request from National Science Foundation, we are working in a committee with other MRSEC Outreach coordinators to evaluate tools available that will help determine the effectiveness and value of our outreach programs in promoting science and engineering, especially with respect to materials. This evaluation process encompasses all sections of the outreach community including K-12, undergraduates, graduate students, teachers, and laypersons with emphasis on reaching under-represented groups that include minorities, women, and the disabled. This committee is coordinated by the MRSEC Educational Outreach Program at Cornell University and involves representatives from almost every MRSEC Outreach Program. We also joined a partnership with Cornell University’s College of Human Ecology, Department of Policy Analysis and Management. In this partnership, we are a trial subject in their ‘Systems Evaluation Protocol for Assessing and Improving STEM Education Evaluation’ program created by Prof. Trochim of Cornell University. This partnership facilitates our program in developing logic models and creating an evaluation and assessment plan for improving all of our outreach programs.

7. Center Diversity – Progress and Plans

Current Status and Progress • We will continue our collaboration with Assistant Professor Curtis Taylor, now of the University of

Florida, a graduate of our MRSEC, and former IGERT fellow. Prof. Curtis was one of only 28 African-Americans nationwide who was awarded a EE PhD in 2005. We have been collaborating with Prof. Taylor on an NSF-GOALI award which has already resulted in 3 jointly authored publications. This continued MRSEC support allowed him to start his career with significant momentum.

• Both MRSEC campuses run NSF-REU (Research Experiences for Undergraduates) programs. Last years NSF/REU programs on nanoscience, was nearly half minority and/or female at OU, and half female and one quarter minority at UA. Moreover, from last year, two students returned for graduate studies.

• In addition, every summer Professor Mortazavi and his students, such as, Ms. Kenauiya Strain from our local HBCU partner, the UA at Pine Bluff, carry out research at the University of Arkansas MRSEC.

• Both MRSEC campuses are either NSF Advance sites or are pursuing Advance awards. - At OU, Prof. Sheena Murphy, a MRSEC faculty member, currently serves as PI on an NSF

Advance PAID award. The centerpiece effort of this project brought together 10 of the Big 12 schools in a Big 12 Workshop on Faculty Diversity and Leadership in January 2008. OU Advance has followed up with surveys of the Big 12 in regards to leave policies, childcare provision and tenure clock stoppage. Additionally Prof. Murphy has helped to lead 3 workshops at OU for search committees addressing methods to diversify the applicant pool and create a more welcoming environment for underrepresented groups. She has presented the results and methods at both the annual Advance PI meeting in DC and at the national conference for Canadian Women in Engineering, Science and the Technical Trades.

- At UA, Professor Salamo (MRSEC co-PI) led the effort on an NSF ADVANCE IT proposal to develop, implement, and evaluate a pathway to encourage the recruitment, retention, and promotion of women at all faculty levels. The proposal team identified four specific aims which were derived from an initial self-examination and by listening to existing ADVANCE programs. Their target as well as criterion for success was to achieve 30% women and 5% minority women faculty in each S&E department on both campuses over the five-year ADVANCE grant. While the proposal was not funded in its first submission, it received strong reviews and the group is now in the formative stage of a new proposal with significantly larger administrative support. UA will host a state-wide conference on ADVANCE March 20, 2009 which will help organize improved data collection for the new proposal and they will also host an NSF supported ADVANCE summer program for broader regional participation with the aid of UW Advance.

Plans for the Next Reporting Period. • We will have submitted a NSF PREM (Partnerships for Research and Education in Materials)

proposal in conjunction with Fisk (an HBCU) and Vanderbilt Universities in Nashville, TN to expand their successful existing bridging program to include C-SPIN.

• We will strengthen our established partnerships with the Louisiana and Oklahoma Louis Stokes Alliances for Minority Participation (LSAMP) programs; the Mississippi and Texas members of the UA Carver Project.

• While we are proud of our progress on diversity (with one quarter of our C-SPIN graduate students female and one tenth members of minority groups), we aim to do even better. Our goal is to strive for half female and one third minority for our graduate population by 2011, reflecting percentages in the population at large.

• We will have submitted a new Arkansas ADVANCE proposal.

8. Knowledge Transfer to Industry and Other Sectors

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Academic Collaborators: C-SPIN counts more than 15 domestic academic collaborators with Center scientists. These

collaborations involve exchange of samples and data for both experimental and theoretical efforts. We note a few here. Salamo is pursuing collaborations that involve exchanges of quantum dot and wire samples with George Stegeman (University of Central Florida). Johnson is continuing his collaboration with Frank Hegmann (University of Alberta) on THz studies of nanostructures. Mullen is collaborating on 2D electron transport in Quantum Hall Systems with Herbert Fertig (Indiana University), René Coté, (University of Sherbrooke). Other collaboration exist with the University of Florida, SUNY-Albany, UT-Austin, Virginia Tech and University of Tulsa. On a routine basis samples produced by CSPIN are exchanged with collaborators across the nation and internationally.

Industrial, Government Laboratory and International Collaborators: C-SPIN counts more than 20 international, government laboratory or industrial collaborators. In

addition to sample and data exchange these collaborations have included student, C-SPIN scientist and visiting scientist travel between institutions. Santos and Murphy have sent students to NTT Basic Research Laboratories in Japan to collaborate on ballistic-transport experiments with Yoshiro Hirayama’s group (now partially at Tohoku University). Santos collaborates with Intel on the integration of dielectric materials with III-V semiconductors. McCann routinely collaborates with a local company, EKIPS Technologies. Salamo also provides samples and scientific exchange with several individuals, including Gary Wood (Army Research Lab), Doug Craig (Air Force Research Lab), and Mathieu Chauvet (Universite de Franche Comte). Shi has collaborated with NRL on vertical-cavity, surface-emitting lasers in IV-VI materials. Murphy collaborates on spin-orbit studies with Leonid Golub of the Ioffe Institute in Russia and on narrow gap processing issues with the Nanofabs at UCSB and Penn State. Xie has a very prolific collaboration with colleagues at the Chinese Academy of Sciences. Peng has strong ties with several industrial companies, ranging from industrial giants (Kodak and GE) to startup companies (Quantum Dots, Kovio, Nanosys, NN-Labs). In addition to that, Peng is acting as Scientific Advisor/Consultant for several companies.

With a recently-awarded NSF-SIA supplement, our research effort on the growth and theory of nanoferroelectrics will be brought into collaboration with real-world commercial interest though a partnership with Texas Instruments. The collaboration, with strong overlap of interest, will provide a common perspective in guiding the research, sharing of the outcomes, and improving education and training. This industry-academic team has explored the role of film thickness, growth direction, composition, and stress on ferroelectric films while comparing the benefits and drawbacks of MBE growth to MOCVD growth in terms of material and interface quality. A graduate student research assistant and a postdoctoral fellow has worked over the last three years and will continue to work in collaboration with a team of researchers including: Dr. Ted Moise, Dr. Uday Udayakumar and Dr. Guoda Lian at Texas Instruments. The TI Instruments team are pursuing ferroelectric random access memory as a beyond the CMOS concept. Our Center infrastructure and related research projects provide a good environment and critical expertise needed for this collaboration. Interaction between the MRSEC and Texas Instruments will, hopefully, continue to be driven by the student, postdoctoral fellow, and MRSEC faculty who have spent extended periods at Texas Instruments and dialoged frequently using video conferencing and yearly in person discussions at UA.

Local Industry Initiatives: Santos works with Amethyst Research Inc., a start-up company in Ardmore OK, on improved

materials for infrared detectors. With partial funding from the State of Oklahoma, they collaborate on several projects geared toward establishing a manufacturing facility for infrared detectors in Ardmore OK.

CSPIN also utilizes the infrastructure provided by the UA Innovation Incubator (I2) to advance some of its research successes into commercialization. In the past, I2 has supported two client proposals originating from CSPIN research. Nanoferr Inc. (Salamo and Bellaiche) focuses on the development of layered ferroelectric structures; and Minotaur Inc. (Xiao) focuses on the development of sensing

8. Knowledge Transfer to Industry and Other Sectors

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technologies. I2 has also worked on the commercialization of ten patents disclosures made by Salamo, Bellaiche, Fu, Peng, and Xiao.

I2 mission has been broadened by adding the Innovation to Commercialization Incubator (ICI), which is separately funded by the NSF-PFI program and is completed this year.. The objective of this new initiative was to build a complete pathway to commercialization. ICI has worked with small companies that have already received an SBIR Phase I award to establish a new partnership with participants in the Walton College of Business’s MBA program.

Workshops and Courses: Nanoscience research and industrial outreach are being supported by courses at both campuses

that train students, researchers and entrepreneurs in key areas. One undergraduate and one graduate course were mentioned above under EHR.

C-SPIN co-organized the Villa conference on Complex Oxide Heterostructures in Clermont, Florida from November 2nd - 6th, 2008 jointly with Oak Ridge National Laboratory. This internationally attended conference brought together over 50 researchers in the oxide community.

C-SPIN sponsorship of workshops for 2009 include two more conferences: a new Villa conference on Interactions in Nanoscience at the Ritz Carlton - St. Thomas, U.S. Virgin Islands from September 6th - 11th (http://vcmeeting.org/ian/) and a follow up conference on complex oxides also at the Ritz Carlton - St. Thomas, USVI: September 13th - 18th, 2009(http://vcmeeting.org/coh/).

9. Shared Experimental Facilities

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NEW AQUISITIONS Beam Blanker for Reconditioned SEM and Software Package for E-beam Lithography (OU): For

submicron patterning of semiconductors and other materials. To be used by Murphy, Santos, Johnson, and Bumm.

Energy Dispersive (X-ray) Spectroscopy (EDS) System for High Resolution TEM (OU): For elemental characterization of nanostructured materials. To be used by Murphy, Santos, Johnson, Bumm, Salamo, and Peng.

UA acquired a FEI Titan TEM with GIFF and Image Correction. This is for the entire campus but is under the supervision of the MRSEC as part of the User Facilities.

UA acquired a FEI Dual Beam Nano Focused Ion Beam. This is also for the entire campus but is under the supervision of the MRSEC as part of the User Facilities.

PLANNED ACQUISTIONS UA has completed the planned equipment purchases and has encumbered the full budget allocated for equipment in the MRSEC proposal. UV-Vis-NIR Spectrophotometer (OU) (175-3300 nm): Simple to use spectrophotometer for

investigating absorption of colloidal and solid state nanostructures and arrays of nanostructures. To be used primarily by Johnson and Bumm.

UA is Building a Droplet Epitaxy Scanning Nozzle. This was acquired through NSF IMR this past year and plans are nearly completed.

EXISTING FACILITIES A. GROWTH AND IN SITU CHARACTERIZATION MBE-STM: MBE-STM facilities at UA and OU are available for CSPIN activities. Although there is

some overlap in materials that can be grown and the analysis techniques available, the existing capabilities are for the most part complementary.

The Intevac Gen II MBE System at OU has two growth chambers and two analysis chambers joined by a single transfer line allowing samples to be transported in UHV between any of the chambers. One growth chamber is for III-V semiconductors (group III In, Al, and Ga; group-V Sb, and As; and dopants Si and Be) and one for fluorides (CaF2 and BaF2), IV-VI materials (Pb, Se, Te), and rare earth dopants (Eu and Tm). The Riber MBE system at UA has a growth chamber for III-V semiconductors (group III In, Al, and Ga; group-V As and P; and dopants Si, Fe, and Be). Recently several new growth cells have been added to this system. It uses a unique optical technique to monitor and control the substrate temperature. Magnetic film growth at UA is presently done by a four-element e-beam source retrofitted to the UHV chamber housing the in-situ STM.

The systems at UA and OU each have a vacuum chamber containing an Omicron Scanning Probe Microscope. These microscopes are capable of doing large- and small-area STM and AFM scanning. OU's analysis chamber has an X-ray gun, an electron gun, and a hemispherical analyzer for X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). An argon ion gun for sputtering enables XPS and AES depth profiling of samples and the removal of oxide layers from InSb substrates. On the OU system there is a newly installed E-beam Evaporator (OU) (Focus EFM 3T) A small robust three source UHV e-beam system to be used for cluster-tool type deposition of various materials on MBE-grown materials.

Colloidal Growth: By design, the innovative procedures for colloidal growth of nanocrystals developed within CSPIN require no special equipment or facilities. The needs for this area fall in the general “Materials and Supplies” budget category.

B. EX-SITU CHARACTERIZATION FACILITIES Scanning Probe Microscopy: Both OU and UA have a number of SPM instruments independent of the

MBE systems. These include: 1) a variable temperature Omicron STM/STL (Luminescence) instrument; 2) a cross-sectional STM; and 3) a versatile in-air Topometrix Explorer AFM/STM used to characterize semiconductors, polymers, and plastics.


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High Resolution X-ray Diffractometer: A Philips Materials Research Diffractometer (MRD) with a four-crystal monochromator is used, at each institution, to characterize MBE samples and a Scintag X2 diffractometer is available at OU optimized for low-angle scattering work with mesoscopic and nano-materials.

Optical Microscope: A Nikon OPTIPHOT-66 with Nomarski phase contrast at OU is used to evaluate surface morphology.

Leica Confocal Microscope: This UA system, Model TCS-4D, delivers 0.17-µm lateral resolution and three-dimensional imaging.

Scanning Interferometric Apertureless Microscope (SIAM). This UA facility will permit determination of the linear and nonlinear optical behavior of single quantum dots.

Hall Effect Measurement Station: The carrier density and mobility in MBE samples are routinely measured at OU in magnetic fields up to 0.2T and at temperatures between 6 and 300K.

SQUID Magnetometer: A Quantum Design MPMS SQUID magnetometer is available at UA for characterizing the magnetic properties of ferromagnetic layers.

NMR Spectrometer: A Bruker DSX-400 NMR spectrometer is available at UA to perform zero-field NMR characterization of ferromagnetic film structure.

Fourier Transform Infrared Spectrometers: A Biorad FTS-60A and a Bruker Equinox 55 FTIR spectrometer are available at OU to characterize semiconductor structures from 4.2 to 300K.

Photoluminescence Spectrometer: This OU system consists of a high-resolution spectrometer, low temperature dewar, and several laser/detector systems to cover the range from the visible to near infrared.

Raman and Micro-Raman Spectrometer: This UA system (SPEX 100) includes a high-resolution spectrometer coupled with laser/detector systems that span the range from the visible to near infrared.

Transmission Electron Microscopes: (Noble Microscopy Facility at OU) JEOL 2000-FX (200,000 volts) scanning TEM. With up to 1,000,000x mag., 0.14-nm resolution.

Double-tilt analytical holder for quantitative X-ray work with 20-nm resolution. ZEISS 10A conventional transmission electron microscope (100,000 volts): With up to 200,000x

mag., 0.34-nm resolution, to be used for instruction. Sample preparation facilities such as: a GATAN ion-thinning mill with cryogenic stages available for

labile specimen preparation; an ultrasonic disc cutter; lapping system; and dimple grinding device with automated cutoff.

Scanning Electron Microscopes: JEOL JSM-880 high resolution SEM (OU), with up to 300,000x mag., 1.5 nm-resolution. Double-tilt analytical holder for quantitative X-ray work. FEI XL30 ESEM-FEG environmental SEM (UA) capable of high-resolution secondary electron imaging at pressures as high as 10 torr and sample temperatures as high as 1,000 oC. The XL30 ESEM-FEG is the first Scanning Electron Microscope to employ the stable, high brightness Schottky Field Emission Source for outstanding observation performance of potentially problematic samples for conventional high vacuum SEMs.

C. ENABLING PHYSICS FACILITIES These facilities involve complex multi-instrument set-ups that are within the labs of the various participants and will be made available for collaborative projects. Low-Temperature Magneto-Optical and Magneto-Transport Systems: (OU)

Quantum transport experiments are made in an Oxford Instruments dilution refrigerator with a base temperature of ~10mK and a maximum field of 14.5T and a top-loading 3He refrigerator with a 0.5K base temperature and a 9 T (at 4.2K) magnet. Optical experiments are made with optical excitation provided by an Edinburgh Instruments FIRL-100 optically pumped far-infrared laser. It and the Bruker FTIR spectrometer can be connected to a dewar with an 8T split-coil magnet. With the inclusion of several microwave spectrometers, we cover the wavelength range from 1cm to 1.5µm

Mid- to Near- IR PhotoLuminescence system (OU) – McPherson Scanning Monochromator with Mercury Cadmium Telluride detector MCT10-010-E-LN to be used by Johnson.


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Optical Spectroscopy Systems: (UA) There are eight laser-based labs available containing a variety of laser sources covering the wavelength range 0.4 to 16 microns and associated optics and diagnostics. These include OPG/OPA tunable (picosecond & femtosecond) lasers, tunable dye lasers, nanosecond and picosecond Nd:YAG lasers, argon-ion and krypton lasers, and Ti:sapphire ps/fs tunable lasers. Recently a near IR camera and a bolometer have been acquired to measure the IR spectra of emission and absorption of quantum dots and wires. As well, a pulse picker has been acquired to select a single optical pulse from a mode locked train of optical pulses.

D. PROCESSING FACILITIES SPiFF (the optical lithography cleanroom) at OU is open to researchers at UA and OU for materials

processing necessary in CSPIN. This cleanroom is specialized for processing III-V materials. Facilities at UA include HiDEC (High Density Electronics Center), a 4,000 square foot clean room area staffed by eleven for processing on five-inch silicon wafers. Below we enumerate the facilities locally available.

SPiFF Deposition Systems: An Edwards diffusion-pumped two-boat thermal evaporator for contact metalization and a Kurt Lesker turbo-pumped RF- and DC-magnetron sputtering system used for contact metalization and insulator deposition, respectively.

Focused Ion Beam System (OU) (FEI 83-2LI) This is installed on a standalone UHV chamber, however in the future it can be added to our multi-chamber MBE.

SPiFF Etching Systems: Inductively Coupled Plasma reactive ion etcher (ICP-RIE) Focused Ion Beam System (OU) (FEI 83-2LI) – to be used by Li, Murphy, Johnson, Santos and Bumm. The Center received an unused FIB gun and control electronics from other researchers at OU. This is being installed on a standalone UHV chamber, however in the future it can be added to our multi-chamber MBE.

Reactive Ion Etcher (OU) (Trion Minilock II) To be used by many C-SPIN experimentalists for anisotropic, selective etching of III-V and silicon based materials.

SPiFF Mask Aligner: Karl Suss Model MJB-3, with accessories. SPiFF Photoresist Spinner: Laurel Technologies WS-200-4NPP. SPiFF Ball Bonder: Marpei Enterprises Inc. MEI 1204B, hybrid ball bonder with thermosonic bonding. ACCESSIBILITY, USE, SUPERVISION AND COST RECOVERY The majority of instruments are housed in the labs of individual investigators, hence their use is supervised by the graduate students and postdocs associated with the lab. The exceptions are the MBE-growth chambers, TEM facility, and the SPiFF processing facilities which see the most extensive use and are supervised at both campuses by dedicated staff. At present the fees are waived for all Center participants. The OU fabrication facility started occupancy of a centralized location in Summer 2002. Already several non-center users routinely use these facilities. Currently outside users only pay for expendables that they use. In the near future, a monthly access fee will be assessed each participating laboratory group.

10. Administration and Management

The C-SPIN initiative grew out of a need at both institutions for a greater collaborative circle. Thus its management style and corresponding structure has been more democratic and collegial than autocratic. But a Center is more than just a collection of researchers and their projects; we have learned through experience that support staff and community activities are essential to forging a cohesive whole. A clear focus with articulated goals is required not only for the research efforts but for the Education and Industrial Outreach as well. Furthermore, having a Center equally split between two universities of adjacent states has some unique issues (the campuses are separated by a 4 hour car trip). As discussed below, we rely heavily on telephone conference calls, Internet-based meetings, frequent visits back and forth and summit meetings in Tulsa which is two hours from both universities. With this philosophy as a backdrop management issues are discussed below in more detail. This is followed by a timeline summarizing activities and new initiatives through out C-SPIN.

Governance: Shown at right is C-SPIN’s management structure. The MRSEC director is Matthew Johnson (OU) and associate director is Greg Salamo (UA). The Executive Committee (EC) consists of the Center Director, the two IRG Directors, and the Coordinators of Industrial and Educational Outreach. The External Review Board (ERB) is made up of members taken from industry, state government and academia. The role of each of these groups will be described below.

MRSEC Director and Associate Director: The Director and Associate Director are responsible for representing the MRSEC at all appropriate activities. They also provide overall supervision of the two IRGs, the Educational and Industrial Outreach components, the Seed Funding program, and the MRSEC budget. They are in charge of arranging joint teleconferencing seminars for reporting the scientific progress of Center participants. They are charged with maintaining the scientific integrity of the MRSEC. They will continue to have a weekly teleconference to review progress in the IRGs, education, industrial outreach, seed, and shared equipment programs. These meetings will also be attended by the Faculty outreach director (Mullen), UA outreach coordinator (Ware) and OU outreach co-ordinator (Wilson). In the event of personnel change, the director and associate director will always come from separate institutions in the collaboration.

Executive Committee: The Executive Committee consists of the IRG directors, the MRSEC director, and the two Directors for Industrial and Education Outreach. The Executive Committee meets every month by teleconference or whenever requested by a Director. They will convene a minimum of twice a year to formally review the progress and direction of each of the IRGs as well as the Center’s human resource development, educational and industrial outreach, and shared equipment programs. Such review will have the potential for changed financial support. Evaluation criteria include: scientific merit, past productivity, the degree of collaborative activity, and past participation in Center outreach activities. Selection criteria for seed projects are slightly different and include: scientific merit, potential for absorption into an existing or new IRG, degree of interdisciplinarity, inclusion of new PIs into the Center; and mentorship of new faculty. The EC then makes a report and recommendations to the Directors. In addition the Executive Committee is the body that evaluates nanoscience curriculum. Finally the Executive Committee has the responsibility for writing the annual report, arranging the annual NSF review (both informal and formal), and for meeting with the External Review Board. They are also responsible for implementing NSF and ERB recommendations. The EC will continue to promote new research activities, new programs in education and outreach, better and more complete facilities, and most importantly, the careers of its young faculty.


External Review Board: The ERB is made up of members taken from industry, state government and academia. The ERB membership shall meet mid-cycle with the Executive Committee. The Board will tour facilities, visit poster presentations by students, and listen to an overview of progress and discuss the future direction of the Center. The Board will also assess the graduate education provided by the Center, and its Outreach programs. In addition, individual ERB members shall meet with C-SPIN on a regular basis to address specific issues within the range of their expertise or to participate in one of the workshops discussed below.

IRG Directors: The day-to-day operation of each of the two IRGs is the responsibility of the IRG directors. Each IRG will continue to meet regularly using Internet facilities, and once a semester at alternating campuses. They are also responsible for developing group meetings, research strategy, and new proposals. The IRG directors also coordinate equipment scheduling for maximum utilization and lowest cost of ownership. The IRG directors report progress to the Executive Committee. They are responsible for all IRG participants, including the investigators, students, postdocs, and collaborators.

Industrial Outreach Director: The first priority for this Director will be to enhance existing partnerships. The formation of an Industrial Affiliates Group will be an important part of this process. This will also be accomplished by enlarging the circle of collaborating scientists and engineers with a given industrial partner. By presenting the broad experience and expertise of the Center faculty and students to a given company, we will have a greater opportunity for successful outcomes. To carry this out, each faculty member will be expected to host, periodically, a visiting industrial scientist.

Education and Outreach Director: A faculty member of the Center (Mullen) is responsible for coordinating both the education program and outreach activities related to education. This individual works closely with a coordinator at the partner campus (Ware), who is be responsible for implementing the outreach programs outlined earlier, and assisted by the OU outreach co-ordinator (Wilson).

Meetings and Conferences: The Center’s administration will involve several types of meetings. The managerial meetings have been described above. They take place either via internet teleconferences using Center Polycom system or simple speakerphones. Research driven meetings are of several types. Small, informal meetings (e.g. to discuss TEM results or present theory) will continue to be scheduled as the need arises. Each IRG will hold seminars as well as host seminars for invited speakers, most notably external collaborators. These will be jointly attended again using our existing teleconferencing tools. Outreach meetings will continue to be semi-monthly covering joint projects such as COMPADRE, museum exhibits and curriculum development. As in the past, Nanoscience Classes will meet twice a week over the semester via teleconferencing, with students earning credit at their home campus. During the summer, RET and REU participants at each institution meet weekly in separate lunchtime sessions to discuss their progress and attend lectures on nanoscience and graduate school admission where appropriate. The RETs and REUs meet at least once over the summer to exchange perspectives on middle and high school science.

In addition to the above, C-SPIN will plan larger Center-wide meetings. These include: (1) graduate student/postdocs exchanges where one campus hosts the researchers from the other; (2) an annual outreach summit that brings together participants from schools of education, RET alumni, and Center participants to discuss best practices in science education; (3) a yearly conference and poster session for visiting NSF administrators; (4) meetings of the Industrial Affiliates Group; and (5) a mid-cycle onsite conference for the ERB.

External Review Board Participants: The following people have agreed to serve as ERB members: 1. Sheri Stickley, Interim President, Oklahoma Center for the Advancement of Science and Technology 2. John Ahlen, President, Arkansas Science and Technology Authority 3. Mansour Shayegan, Department of Electrical Engineering, Princeton University 4. Moses Chan, Dept. Physics, Director Penn State MRSEC (2000-2005), Penn State University 5. Luz Martinez-Miranda, Materials Science and Engineering, University of Maryland.


6. Davis Baird, Chair, Dept. of Philosophy, Assoc. Director NanoCenter, University of South Carolina, 7. Richard E. Slusher, Dept. Head, Optical Physics Research, Lucent Technologies, Murray Hill, NJ 8. Bill Harsch, Director of Market and Business Development, Eagle-Picher, Joplin, MO 9. Charles Chalfant, President and CEO, Space Photonics Inc., Fayetteville, AR 10. Colin Cumming, President, Nomadics Inc., Stillwater, OK

The ERB was increased from five to ten members to address the issues of diversity, societal impact, and entrepreneurship. New ERB members include: Professor Luz Martinez-Miranda who was added not only because she is a nationally recognized Materials Scientist, but also because she has had considerable success in promoting diversity in science, Professor Davis Baird, an expert on the societal impact of nanotechnology; and Charles Chalfant and Colin Cumming, two highly successful local entrepreneurs.

11. List of Promoted Personnel

Students Graduated: University of Oklahoma Karen Bottoms F MS May, 2007 Nanotechnology Program Coordinator, Oklahoma State University at Okmulgee Kevin Hobbs M May, 2008 Nanotech in MN. Wesley Tenneyson M M.Eng. May, 2008 Roshan Bokalawela M M.Eng. Dec. 2008 Continuing grad student (C-SPIN) Dilhani Jayathilaka F M.Eng. Dec. 2008 Continuing grad student (C-SPIN) Lee Elizondo M Ph.D. June, 2008 Raytheon University of Arkansas Ying Song F MSME May, 2008 Almatis, Bauxite, AR Tyson Lawrence M MS Aug, 2008 College of Education, UA Feng Chen F MS Jan., 2009 Nanotech Center, Ames Lab, NASA Jihoon Lee M Ph.D. Feb., 2009 Faculty position in Korea Guoyuan Fu M Ph.D. May, 2008 Post doc at UA Engineering Ranga P. Desikan M MS May, 2008 Oak Ridge National Lab Colin Furrow M MS Aug., 2008 Insurance company Kimberly Sablon F MS May, 2008 Continuing grad student (C-SPIN) Vitaly Dorogan M MS May 2008 Continuing grad student (C-SPIN) Tm Morgan M MS May 2008 Continuing grad student (C-SPIN) Post-doctoral Scientists: University of Oklahoma Hong Wen F Aug. 2007 returned to U. of Arkansas Shelly Elizondo F July, 2008 Raytheon University of Arkansas Inna Ponomareva F Dec., 2008 Assistant Professor, U. of South Florida Boyan Obreshkov M Oct. 2008 University of Nevada Renguo Xie M Oct., 2008 Nano Institute, University of Arkansas Bridgett Blackman F May 2008, Corning

12. C-SPIN Support Publications and Patents

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IRG 1 a) Primary C-SPIN Support

1. “Cooperative response of Pb(ZrTi)O3 nanoparticles to curled electric fields,” I. Naumov and H. Fu, Phys. Rev. Lett. 101, 197601 (2008).

2. “Coherent Exciton-Surface-Plasmon-Polariton Interaction in Hybrid Metal-Semiconductor Nanostructures,” Vasa P., Pomraenke R., Schwieger S., Mazur Yu. I., Kunets Vas., Srinivasan P., Johnson E., Kihm, J. E., Kim D. S. Runge E., Salamo G., Lienau, C., Phys. Rev. Lett., 101(11), 116801 (2008).

3. “Design of Nanostructure Complexes by Droplet Epitaxy,” Lee, J. H.; Wang, Z. M.; AbuWaar, Z. Y.; Salamo, G. J., Crystal Growth & Design, 9(2), 715 (2009).

4. “Unusual role of the substrate in droplet-induced GaAs/AlGaAs quantum-dot pairs,” Wang, Zh. M.; Mazur, Yu. I.; Sablon, K. A.; Mishima, T. D.; Johnson, M. B.; Salamo, G. J., Physica Status Solidi RRL: Rapid Research Letters, 2(6), 281 (2008).

5. “SOCl2 enhanced photovoltaic conversion of single wall carbon nanotube/n-silicon heterojunctions,” Li, Zhongrui; Kunets, Vasyl P.; Saini, Viney; Xu, Yang; Dervishi, Enkeleda; Salamo, G. J.; Biris, Alexandru R.; Biris, Alexandru S., Applied Physics Letters, 93(24), 243117 (2008).

6. “Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure,” Wong, P. S.; Liang, B. L.; Dorogan, V. G.; Albrecht, A. R.; Tatebayashi, J.; He, X.; Nuntawong, N.; Mazur, Yu I.; Salamo, G. J.; Brueck, S. R. J.; Huffaker, D. L. Nanotechnology, 19(43), 435710 (2008).

7. “Structural evolution during formation and filling of self-patterned nanoholes on GaAs (100) surfaces,” Sablon, K. A.; Wang, Zh. M.; Salamo, G. J.; Zhou, Lin; Smith, David J., Nanoscale Research Letters, 3(12), 530 (2008).

8. “Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy,” Kunets, Vas. P.; Morgan, T. Al.; Mazur, Yu. I.; Dorogan, V. G.; Lytvyn, P. M.; Ware, M. E.; Guzun, D.; Shultz, J. L.; Salamo, G. J., Journal of Applied Physics, 104(10), 103709 (2008).

9. “Thermal peculiarity of AlAs-capped InAs quantum dots in a GaAs matrix,” Dorogan, V. G.; Mazur, Yu. I.; Lee, J. H.; Wang, Zh. M.; Ware, M. E.; Salamo, G. J., Journal of Applied Physics, 104(10), 104303 (2008).

10. “Comparison of MBE Growth of InSb on Si (001) and GaAs (001),” Tran, T. Lien; Hatami, Fariba; Masselink, W. Ted; Kunets, Vas P.; Salamo, G. J., Journal of Electronic Materials, 37(12), 1799 (2008).

11. “Energy Transfer within Ultralow Density Twin InAs Quantum Dots Grown by Droplet Epitaxy,” Liang, B.-L.; Wang, Z.; Wang, X.-Y.; Lee, J.; Mazur, Y. I.; Shih, C.-K.; Salamo, G. J., ACS Nano, 2(11), 2219 (2008).

12. “In situ photoluminescence study of uncapped InAs/GaAs quantum dots,” AbuWaar, Ziad Y.; Marega, E., Jr.; Mortazavi, M.; Salamo, G. J., Nanotechnolog, 19(33), 335712 (2008).

13. “Spectroscopic observation of developing InAs quantum dots on GaAs ringlike-nanostructured templates,” Mazur, Yu. I.; Abu Waar, Z. Y.; Mishima, T. D.; Lee, J. H.; Tarasov, G. G.; Liang, B. L.; Dorogan, V. G.; Ware, M. E.; Wang, Zh. M.; Johnson, M. B.; Salamo, G. J., Journal of Applied Physics, 104(4), 044310 (2008).

14. “Comparative study of optical properties between quantum dot chains and quantum dots,” Wang, Bao-rui; Sun, Zheng; Xu, Zhong-ying; Sun, Bao-quan; Ji, Yang; Wang, Z. M.;


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Salamo, G. J, Hongwai Yu Haomibo Xuebao, 27(3), 161, 189 (2008).

15. “InMnAs quantum dots: a Raman spectroscopy analysis,” Rodrigues, A. D.; Galzerani, J. C.; Marega, E., Jr.; Coelho, L. N.; Magalhaes-Paniago, R.; Salamo, G. J., Springer Proceedings in Physics, 119(Narrow Gap Semiconductors 2007), 57 (2008).

16. “Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains,” Wang, B. R.; Sun, B. Q.; Ji, Y.; Dou, X. M.; Xu, Z. Y.; Wang, Zh. M.; Salamo, G. J., Applied Physics Letters, 93(1), 011107 (2008).

17. “Multi-color photoresponse based on interband and intersubband transitions in InAs and InGaAs quantum dot photodetectors,” Passmore, Brandon S.; Wu, Jiang; Decuir, Eric A., Jr.; Manasreh, Omar; Lytvyn, Peter M.; Kunets, Vasyl P.; Salamo, G. J, Materials Research Society Symposium Proceedings, Volume Date 2007, 1055E(Excitons and Plasmon Resonances in Nanostructures), No pp. given, Paper #: 1055-GG02-02 (2008).

18. “Composite droplets: evolution of InGa and AlGa alloys on GaAs(100),” Sablon, K. A.; Wang, Zh M.; Salamo, G. J, Nanotechnology, 19(12), 125609 (2008).

19. “Configuration control of quantum dot molecules by droplet epitaxy,” ablon, K. A.; Lee, J. H.; Wang, Zh. M.; Shultz, J. H.; Salamo, G. J., Applied Physics Letters, 92(20), 203106 (2008).

20. “Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGaAs,” Teodoro, M. D.; Dias, I. F. L.; Laureto, E.; Duarte, J. L.; Gonzalez-Borrero, P. P.; Lourenco, S. A.; Mazzaro, I.; Marega, E., Jr.; Salamo, G. J., Journal of Applied Physics, 103(9), 093508 (2008).

21. “Super Low Density InGaAs Semiconductor Ring-Shaped Nanostructures,” Lee, Jihoon H.; Wang, Zhiming M.; Ware, Morgan E.; Wijesundara, Kushal C.; Garrido, Mauricio; Stinaff, Eric. A.; Salamo, G. J., Crystal Growth & Design, 8(6), 1945 (2008).

22. “Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element,” Kunets, Vasyl P.; Dobbert, Julia; Mazur, Yuriy I.; Salamo, G. J.; Muller, Uwe; Masselink, W. T.; Kostial, Helmar; Wiebicke, Evi, Journal of Materials Science: Materials in Electronics, 19(8/9), 776 (2008).

23. “Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains,” Strelchuk, V. V.; Mazur, Yu. I.; Wang, Zh. M.; Schmidbauer, M.; Kolomys, O. F.; Valakh, M. Ya.; Manasreh, M. O.; Salamo, G. J., Journal of Materials Science: Materials in Electronics, 19(8/9), 692 (2008).

24. “Investigation of deep levels in InGaAs channels comprising thin layers of InAs,” Dobbert, J.; Kunets, Vas. P.; Morgan, T. Al.; Guzun, D.; Mazur, Yu. I.; Masselink, W. T.; Salamo, G. J., Journal of Materials Science: Materials in Electronics, 19(8/9), 797 (2008).

25. “Optical properties of InGaAs/GaAs quantum chains,” Wang, Bao-Rui; Zheng, Sun; Xu, Zhong-Ying; Sun, Bao-Quan; Yang, Ji; Wang, Z. M.; Salamo, G. J., Wuli Xuebao, 57(3), 1908 (2008).

26. “Room temperature near-infrared photoresponse based on interband transition in In0.35Ga0.65As multiple quantum dot photodetector,” Passmore, Brandon S.; Wu, Jiang; Manasreh, M. O.; Kunets, Vasyl P.; Lytvyn, P. M.; Salamo, G. J., IEEE Electron Device Letters, 29(3), 224-227 (2008).

27. “Excitonic band edges and optical anisotropy of InAs/InP quantum dot structures,” Mazur, Yu. I.; Noda, S.; Tarasov, G. G.; Dorogan, V. G.; Salamo, G. J.; Bierwagen, O.; Masselink, W. T.; Decuir, E. A., Jr.; Manasreh, M. O., Journal of Applied Physics, 103(5), 054315


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(2008).

28. “Evolution of InGaAs quantum dot molecules,” Lee, J. H.; Sablon, K.; Wang, Zh. M.; Salamo, G. J., Journal of Applied Physics, 103(5), 054301 (2008).

29. “Broadband photoresponse from InAs quantum dots embedded in a graded well for visible to mid-infrared detection,” Passmore, Brandon S.; Wu, Jiang; DeCuir, Eric A., Jr.; Manasreh, Omar; Lytvyn, P. M.; Marega, Euclydes, Jr.; Kunets, Vasyl P.; Salamo, G. J., Proceedings of SPIE, 6900(Quantum Sensing and Nanophotonic Devices V), 69000O (2008).

30. “Synthetic scheme for high-quality InAs nanocrystals based on self-focusing and one-pot synthesis of InAs-based core-shell nanocrystals,” Lee, Jihoon H.; Wang, Zhiming M.; Sablon, Xie RG, Peng XG, Angewandte Chemie – International Edition, 47, 7677 (2008).

31. “Shape control of doped semiconductor nanocrystals (d-dots),” R. Viswanatha, D. Battaglia, M. Curtis, T. D. Mishima, M. B. Johnson, X. Peng, Nano Research, 1 138 (2008).

32. “Controlling Fluorescence Intermittency of a Single Colloidal CdSe/ZnS Quantum Dot in a Half-cavity,” Y. Zhang, V.K. Komarala, C. Rodriguez, and M. Xiao, Phys. Rev. B 78, Rapid Communications, 241301(R) (2008).

33. “Enhanced Fluorescence Intermittency in Mn-doped Single ZnSe Quantum Dot,” Y. Zhang, C. Gan, J. Muhammad, D. Battaglia, X. Peng, and M. Xiao, J. of Physical Chemistry C 112, 20200 (2008).

34. “Fluorescence Lifetime of Mn-doped ZnSe Quantum Dots with Size Dependence,” C. Gan, Y. Zhang, D. Battaglia and X. Peng, and M. Xiao, Appl. Phys. Lett. 92, 241111 (2008).

35. “Nature of dynamical coupling between polarization and strain in nanoscale ferroelectrics from first principles,” I. Ponomareva and L. Bellaiche, Physical Review Letters, 101, 197602 (2008) [also selected for the November 17, 2008 issue of Virtual Journal of Nanoscale Science and Technology].

36. “Unusual static and dynamical characteristics of domain evolution in ferroelectric superlattices,” S. Lisenkov, I. Ponomareva and L. Bellaiche, Physical Review B 79, 024101 (2009).

37. “Coexistence of the Phonon and Relaxation Soft Modes in the Terahertz Dielectric Response of Tetragonal BaTiO3,” J. Hlinka, T. Ostapchuk, D. Nuzhnyj, J. Petzelt, P. Kuzel, C. Kadlec, P. Vanek, I. Ponomareva and L. Bellaiche, Physical Review Letters 101, 167402 (2008).

38. “Electrocaloric effect in bulk and low-dimensional ferroelectrics from first principles,” S. Prosandeev, I. Ponomareva and L. Bellaiche, Physical Review B 78, 052103 (2008).

39. “Original properties of dipole vortices in zero-dimensional ferroelectrics,” S. Prosandeev, I. Ponomareva, I. Naumov, I. Kornev, and L. Bellaiche, Invited Topical Review, J. Phys.: Condens. Matter 20, 193201 (2008).

40. “Infrared and THz soft-mode spectroscopy of (Ba,Sr)TiO3 ceramics,” Tetyana Ostapchuk, Jan Petzelt, Petr Kuzel, Sergiy Veljko, Alexander Tkach, Paula Vilarinho, Inna Ponomareva, L. Bellaiche, Elena Smirnova, Vladislav Lemanov, Andrey Sotnikov and Manfred Weihnacht, Ferroelectrics 367, 139 (2008).

41. “Atomic control and characterization of surface defect states of TiO2 terminated SrTiO3 single crystals,” M. Kareev, S. Prosandeev, J. Liu, C. Gan, A. Kareev, J. W. Freeland, M. Xiao, and J. Chakhalian, Appl. Phys. Lett. 93, 061909 (2008).

42. “Polarization transitions in interacting ring 1D arrays,” Bahman Roostaei and K. J. Mullen, Phys. Rev. B 78, 075411 (2008).


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b. Partial MRSEC Support

1. “Kinetically Probing Site-Specific Heterogeneous Nucleation and Hierarchical Growth of Nanobranches,” T. Zhang, W. Dong, R. Njabon, V. K. Varadan, Z. R. Tian,, J. Phys. Chem. C., 111, 13691-13695, (2007).

2. “Piezoelectric 3D nanostructures for developing point-of-care biosensors,” J. K. Abraham, S. Dubaka, V. K. Varadan, H. Zhou, T. Zhang, Z. R. Tian, SPIE Proc., 6528, (2007).

3. “Far-field second-harmonic fingerprint of twining in single ZnO rods,” S. W. Liu, H. J. Zhou, J. L. Weerasinghe, A. Ricca, Z. R. Tian, M. Xiao, Phys. Rev. B, 77, 113311 (2008).

4. “Optical spatial solitons at the interface between two dissimilar periodic media: theory and experiment,” Suntsov S; Makris K G; Christodoulides D N; Stegeman G I; Morandotti R; Volatier M; Aimez V; Ares R; Yang E H; Salamo G., Optics express, 16(14), 10480 (2008).

5. “Comparative Study on Different Carbon Nanotube Materials in Terms of Transparent Conductive Coatings,” Li, Zhongrui; Kandel, Hom R.; Dervishi, Enkeleda; Saini, Viney; Xu, Yang; Biris, Alexandru R.; Lupu, Dan; Salamo, G. J.; Biris, Alexandru S., Langmuir, 24(6), 2655 (2008)

6. “Linear and Nonlinear Optical Refractions of CR-39 Composite with CdSe Nanocrystals,” C. Gan, Y. Zhang, S. Liu, and M. Xiao (with Yunjun Wang), Optical Materials, 30, 1440 (2008).

7. “High-pressure effect on PbTiO3: An investigation by Raman and X-ray scattering up to 63 GPa,” P.E. Janolin, P. Bouvier, J. Kreisel, P.A. Thomas, I.A. Kornev, L. Bellaiche, W. Crichton, M. Hanfland and B. Dkhil, Physical Review Letters 101, 237601 (2008).

8. “Properties of multiferroic BiFeO3 under high magnetic fields from first principles,” S. Lisenkov, Igor A. Kornev, and L. Bellaiche, Physical Review B 79, 012101 (2009).

9. “Controlling double vortex states in low-dimensional dipolar systems” S. Prosandeev and L. Bellaiche, Physical Review Letters 101, 097203 (2008) [also selected for the September 8, 2008 issue of Virtual Journal of Nanoscale Science and Technology}.

10. “Phase stability and structural temperature dependence in powder multiferroic BiFeO3,” R. Haumont, Igor A. Kornev, S. Lisenkov, L. Bellaiche, J. Kreisel and B. Dkhil, Physical Review B 78, 134108 (2008).

11. “Calculated Thermal Properties of Single-Walled Carbon Nanotube Suspensions,” H. M. Duong, D. V. Papavassiliou, K. J. Mullen, Brian L. Wardle, and Shigeo Maruyama, J. Phys. Chem. C, 112 (50) (2008).

c. Shared Facilities

1. “Bright and water-soluble near IR-Emitting CdSe/CdTe/ZnSe Type-II/Type-I nanocrystals, tuning the efficiency and stability by growth,” Blackman B, Battaglia D and Peng XG, Chemistry of Materials 20, 4847 (2008).

2. “Ligand bonding and dynamics on colloidal nanocrystals at room temperature: The case of alkylamines on CdSe nanocrystals,” Ji XH, Copenhaver D, Sichmeller C and Peng X., Journal of the American Chemical Society 130, 5726 (2008).

IRG 2 a. Primary C-SPIN Support


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1. “Theory of Activated Transport in Bilayer Quantum Hall Systems,” B. Roostaei, K. J. Mullen, H. A. Fertig, and S. H. Simon, Phys. Rev. Lett. 101, 046804 (2008).

2. “Measurement of the Dresselhaus and Rashba spin-orbit coupling via weak anti-localization in InSb quantum wells,” A.R. Dedigama, D. Jayathilaka, S.H. Gunawardana, S.Q. Murphy, M. Edirisooriya, N. Goel, T.D. Mishima and M.B. Santos, Springer Proceedings in Physics 119, 35 (2008).

3. “Magnetoexcitons in Strained InSb Quantum Wells,” W. Gempel, X. Pan, T. Kasturiarachchi, G.D. Sanders, M. Edirisooriya, T.D. Mishima, R.E. Doezema, C.J. Stanton, and M.B. Santos, Springer Proceedings in Physics 119, 213 (2008).

4. “Effect of Structural Defects on Electron Mobility in InSb Quantum Wells Grown on GaAs (001) Substrates,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Phys. Stat. Sol. (c) 5, 2775 (2008).

5. “InSb quantum well based micro-Hall devices: potential for pT-detectivity,” Vas. P. Kunets, S. Easwaran, W. T. Black, D. Guzun, Yu. I. Mazur, and G. J. Salamo, N. Goel, T. D. Mishima, and M.B. Santos, IEEE Transactions on Electron Devices (in press).

6. “InSb Quantum-Well Structures for Electronic Device Applications,” M. Edirisooriya, T.D. Mishima, C.K. Gaspe, K. Bottoms, R.J. Hauenstein, and M.B. Santos, Journal of Crystal Growth (in press).

7. “InAs-based interband cascade lasers near 6 µm,” Z. Tian and R. Q. Yang, T. D. Mishima, M. B. Santos, R. T. Hinkey, M. E. Curtis, and M. B. Johnson, Electronics Letters 45, 48 (2009).

8. “Persistent spin current in nanodevices and definition of the spin current,” Sun, Q.F., Xie, X.C., and Wang, J., Phys. Rev B 77, 035327 (2008).

9. “Persistent spin current in spin-orbit coupling systems in the absence of an external magnetic field,” Sun, Q.F. and Xie, X.C., International Journal of Modern Physics B, 21 3687 (2007).

10. “Spin Nernst effect and Nernst effect in two-dimensional electron systems”, Cheng S.G., Xing Y., Sun Q.F., Xie X.C. Phys Rev B 78 045302 (2008).

11. “Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells,” A. R. Dedigama, D. Jayathilaka, S. H. Gunawardana, S. Q. Murphy, M. Edirisooriya, N. Goel, T. D. Mishima and M. B. Santos, Springer Proceedings in Physics 119, (2008).


1. “Control and Probe of Carrier and Spin Relaxations in InSb Based Structures,” G.A. Khodaparast, R.N. Kini, K. Nontapot, M. Frazier, E.C. Wade, J.J. Heremans, S.J. Chung, N. Goel, M.B. Santos, T. Wojtowicz, X. Liu, and J.K Furdyna, Springer Proceedings in Physics 119, 15 (2008).

2. “Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer, “ InJo Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Domingo Garcia, Prashant Majhi, N. Goel and W. Tsai, C. Gaspe, M.B. Santos, and Jack C. Lee, Applied Physics Letters 92, 202903 (2008).

3. “In0.53Ga0.47As based MOS capacitors with ALD ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm,” S. Koveshnikov, N. Goel, P.


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Majhi, H. Wen, M.B. Santos S. Oktyabrsky, V. Tokranov, R. Kambhampati, R. Moore, F. Zhu, J. Lee, and W. Tsai, Applied Physics Letters 92, 222904 (2008).

4. “A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer,” Hyoung-Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi, N. Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Applied Physics Letters 93, 062111 (2008).

5. “A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer,” Hyoung-Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi, N. Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Applied Physics Letters 93, 062111 (2008).

6. “A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer,” Feng Zhu, Han Zhao, I. Ok, H. S. Kim, J. Yum, Jack C. Lee, Niti Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Applied Physics Letters 94, 013511 (2009).

7. “Simultaneous gas-phase detection of nitric oxide (NO) and nitrous oxide (N2O) from the decomposition of Angeli’s salt (Na2N2O3) at different pHs using tunable-diode laser absorption spectroscopy,” J. Yi, K. Namjou, P. J. McCann, and G. B. Richter-Addo, American Journal of Biomedical Sciences 1, 38 (2009).

8. “There’s More to Light Than Meets the Eye,” F. McCann, J. Pedersen, C. Falsarella, and P. J. McCann, Science Scope 31, 33 (2008).

9. “IV-VI semiconductor lasers for gas phase biomarker detection,” P. J. McCann, K. Namjou, C. B. Roller, G. McMillen, and P. Kamat, Proceedings of SPIE 6756, 675603 (2007).

10. “Optical Transitions in PbTe/CdTe Quantum Dots,” T. Xu, H. Wu, J. Si, and P. J. McCann, Physical Review B 76, 155328 (2007).

11. “Nanotechnology’s Role in Mid-Infrared Laser Development,” P. J. McCann, NASA Tech Briefs 31, 6a (in Photonics Tech Briefs Supplement) (2007).

12. “Fabrication of an Electrically Pumped Lead-Chalcogenide Midinfrared Laser on a [110] Oriented PbSnSe Substrate,” S. Mukherjee, D. Li, D. Ray, F. Zhao, S. L. Elizondo, S. Jain, J. Ma, and Z. Shi, IEEE Photon. Technol. Lett. 20, 629, (2008).

13. “Influence of oxygen passivation on optical properties of PbSe thin films,” F. Zhao, S. Mukherjee, J. Ma, D. Li, S. L. Elizondo, Z. Shi, Applied Physics Letters 92, 211110 (2008)

14. “Nature of Growth Pits in Lead Salt Epilayers Grown by Molecular Beam Epitaxy,” Ma J., Li D., Bi. G. Fanghai Z., Elizondo S., Mukherjee S. and Zhisheng Shi, Journal of Electronic Materials 38, 325 (2009).

15. “Recent developments of PbSe-based IV-VI semiconductor quantum well structures,” S. Mukherjee, S.L. Elizondo, L.A. Elizondo, Zhisheng Shi, Book Chapter NOVA Publisher, ISBN: 978-1-60692-557-7, 2009.

16. “Dielectric charge screening of dislocations and ionized impurities in PbSe and MCT,” Elizondo, S. L., Zhao, F., Kar, J., Ma, J., Smart, J., Li, D., Mukherjee, S., Shi, Z., Journal Electronic Materials, 37 1411 (2008).

17. “Strain oriented microstructural change during the fabrication of free-standing PbSe micro-rods,” Mukherjee, S, Jain, S., Zhao, F., Kar, J. P., Li, D., Shi, Z., Journal of Materials Science-Materials In Electronics, 19 237 (2008).


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18. “Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe-PbSrSe MQW structure,” Mukherjee, S., Jain, S., Zhao, F., Kar, J. P., Li, D., Shi, Z., Microelectronic Engineering 85 665 (2008).

19. “Cyclotron Resonance of Holes in InSb Quantum Wells,” J. Coker, M. Edirisooriya, T.D. Mishima, R.E. Doezema, M.B. Santos, X. Pan, G.D. Sanders, C.J. Stanton and Y-J. Wang, Advanced Heterostructures and Nanostructures Workshop, December 2008.

20. “InSb-based Materials Grown by Molecular Beam Epitaxy on GaAs, Ge, and Ge-on-Insulator-on-Si Substrates,” M.B. Santos, M. Debnath, T.D. Mishima, M. Edirisooriya, K. Hossain, and O.W. Holland, DARPA/MTO Common Platform Composite Wafer Technology: IR Materials Workshop, October 2008.


8 of 8

Seeds a. Primary C-SPIN Support

1. “Superhydrophobic Surfaces Produced by Applying a Self- Assembled Monolayer to Silicon Micro/Nano-Textured Surfaces,” Song, Y., Premachandran Nair, R. Zou, M., and Wang, Y.A., Nano Research, 2(2) 143 (2009).

2. “Nanomechanical properties of a Ni nanodot-patterned surface,” Wang, H., Zou, M., Larson, P.R., Sanchez, E.S., Hobbs, K.L., Curtis, M.E., Johnson, M.B., and Awitor, O. K., Nanotechnology, 19 (2008) 295708.

3. “PFPE Modified Silicon Nano-textured Surfaces for Adhesion and Friction Reduction,” Song, Y., Wang, H., and Zou, M., International Conference on Integration and Commercialization of Micro and Nano-systems, June 3-5, 2008, Clear Water Bay, Kowloon, Hong Kong, 2008.

4. “Nanoindentation on a Ni Nanodot-patterned Surface,” Wang, H., Zou, M., Jackson, R. L., Larson, P.R., and Johnson, M.B., International Conference on Integration and Commercialization of Micro and Nano-systems, June 3-5, 2008, Clear Water Bay, Kowloon, Hong Kong, 2008.

5. “Photo-catalysis using titanium dioxide nanotube layers,” K.O. Awitor, S. Rafqah, G. Géranton, Y. Sibaud, P.R. Larson, R.S.P. Bokalawela, J.D. Jernigen, M.B. Johnson, J. of Photochemistry and Photobiology A: Chemistry 199, 250 (2008)


1. “Production of a Superhydrophilic Surface by Aluminum-induced Crystallization of Amorphous Silicon,” Kollias, K., Wang, H., Song, Y., and Zou, M., Nanotechnology, 19 465304 (2008).

2. “Solid state Nanopore for Detecting Individual Biomolecules,” J. Li and Jene A. Golovchenko. Book chapter in Micro and Nano Technoligies in Bioanalysis Methods in Molecular Biology 544, Humana Press, USA. 2008.

Patents

List publications with use of MRSEC shared facilities: List patents with primary MRSEC support: (indicate if each is awarded, pending and licensed)

1. “Ferroelectric Nanostructures Having Switchable Multi-stable Vortex States,”' Provisional Patent Application No. 11/811,444, filed on June 8, 2007 and in the process of being awarded; Inventors: Ivan I. Naumov, L. Bellaiche, Sergey Prosandeev, Inna Ponomareva and Igor Kornev.

13. Biographical Information

MOURAD BENAMARA Materials Characterization specialist,

Manager of the University of Arkansas Electron Microscopy Facility

a) PROFESSIONAL PREPARATION: University of Toulouse III (France) Microelectronics B.S. 1990 University of Toulouse III Electrical Engineering M.S. 1993 University of Toulouse III Electrical Engineering Ph.D. 1996 Danish Technical University (Denmark) Materials Science Postdoc 1997 b) APPOINTMENTS: 2007-present: Research Assistant Professor, Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville

Responsible of the daily operation and maintenance of a FEI Titan 80-300 S/TEM and a Nova Nanolab (Dual-Beam FIB/SEM). Evaluate and develop methods in materials characterization, purchases and evaluates equipment. Support materials characterization for University research groups.

2003-2005 Research Associate, Carnegie Mellon University (Pittsburgh, PA) 2001-2003 Visiting Scientist, MPI & University of Erlangen-Nuremberg (Germany) 1997-2000 Research Engineer, Lawrence Berkeley National Laboratory, Berkeley, CA (c) PUBLICATIONS: Authored and co-authored more than 50 publications in scientific journals. Selected publications:

1. M. Benamara, X. Zhang, M. Skowronski, P. Ruterana, G. Nouet, J. J. Sumakeris, M. J. Paisley, and M. J. O'Loughlin , "Structure of the carrot defect in 4H-SiC epitaxial layers", Appl. Phys. Lett. 86 (2) (2005).

2. M. Benamara, L. Kirste, M. Albrecht, K. W. Benz, H. P. Strunk, Pyramidal-Plane Ordering in AlGaN Alloys, Appl. Phys. Lett. 82 (4), 547 (2003).

3. S. Ha, M. Benamara, M. Skowronski, and H. Lendenmann, "Core structure and properties of partial dislocations in silicon carbide p-i-n diodes", Appl. Phys. Lett. 83 (24), 4957 (2003).

4. Z. Liliental-Weber, M. Benamara, J. Washburn, I. Grzegory and S. Porowski, "Spontaneous ordering in bulk GaN:Mg samples", Physical Review Letters 83, 2370 (1999).

5. M. Benamara, Rocher, A., P. Sopena, A. Laporte, A.; G. Sarrabayrouse, L. Lescouzeres, A. Peyre-Lavigne and A. Claverie, Structural and electrical investigations of silicon wafer bonding interfaces, Materials Science & Engineering B, vol.42, p. 164 (1996).

Presented papers, orally and written, at international conferences (MRS, ECS, BIADS,…) d) SYNERGISTIC ACTIVITIES: • Development of a new course to introduce University members to materials characterization

techniques using a state-of-the-art Transmission Electron Microscopes. (e) COLLABORATORS: Omar Manasreh, Jin-Woo Kim, Ryan Tian, University of Arkansas

13. Biographical Information

Rui Q. Yang [email protected] Professional Preparation: Zhejiang University, Hangzhou, China, Physics, B.Sc. July, 1982 Nanjing University, Nanjing, China, Physics, M.Sc. December, 1984 Nanjing University, Nanjing, China, Physics, Ph.D. December, 1987 University of Toronto, Toronto, Canada, Electrical Engineering, Post-doc 1990-1992 Appointments: 4/2007-present: Professor, School of Electrical & Computer Engineering, University of Oklahoma,

Norman, OK 09/2005-08/2007: Principal Member of Engineering Staff and Task Manager, Jet Propulsion Laboratory

(JPL), Pasadena, CA 10/2001-09/2005: Senior Member of Engineering Staff and Task Manager, JPL, Pasadena, CA 04/2000-10/2001: Chief Technical Officer at Maxion Technologies, Inc. Hyattsville, MD 09/1999-11/2000: Guest Scientist at US Army Research Laboratory (ARL), Adelphi, MD. 01/1999-08/1999: NRC/ARL Senior Research Associate, Army Research Laboratory, Adelphi,MD. 09/1997-01/1999: Research Associate Professor, University of Houston, Houston, TX 1995-08/1997: Research Scientist, Space Vacuum Epitaxy Center, Univ. of Houston, Houston, TX Task Leader for IR lasers (95-97) and for device physics & modeling (97-98). 1990-1994: Postdoctoral Fellow/Research Associate, Department of Electrical Engineering,

University of Toronto, Toronto, Canada. 09/1989-01/1990: Visiting Scientist, Department of Physics, University of Toronto, Canada

Selected Publications 1. R. Q. Yang, "Infrared laser based on intersubband transitions in quantum wells", Superlattices and

Microstructures, 17, No.1, pp. 77-83 (1995). 2. R. Q. Yang, “Novel Concepts and Structures for Infrared Lasers”, Chap. 2, in Long Wavelength

Infrared Emitters Based on Quantum Wells and Superlattices, edited by M. Helm (Gordon & Breach Pub., Singapore, 2000).

3. K. Mansour, Y. Qiu, C. J. Hill, A. Soibel, R. Q. Yang, “Mid-IR interband cascade lasers at thermoelectric cooler temperatures”, Electronics Letters, 42, 1034 (2006).

4. R. Q. Yang, C. J. Hill, K. Mansour, Y. Qiu, A. Soibel, R. Muller and P. Echternach, “Distributed feedback mid-infrared interband cascade lasers at thermoelectric cooler temperatures”, IEEE J. Selected Topics of Quantum Electronics, 13, 1074 (2007).

5. Z. Tian, R. Q. Yang, T. D. Mishima, M. B. Santos, R. T. Hinkey, M. E. Curtis, M. B. Johnson, “InAs-based interband cascade lasers near 6 µm”, Electronics Letters, 45, 48-49 (2009).

Other Scientific and Professional Activities: Member Institute of Electrical and Electronics Engineers (IEEE), IEEE ED Society, Optical Society of America (OSA), IEEE Lasers & Electro-Optics Society (LEOS). Reviewer JOURNAL OF APPLIED PHYSICS and APPLIED PHYSICS LETTERS IEEE Photonics Technology Letters, IEEE Journal of Quantum Electronics He is the inventor of interband cascade (IC) lasers with research activities ranging from condensed matter physics to novel quantum devices. He has successfully led several record-breaking IC laser development projects on tight schedules and delivered IC lasers to several organizations (including universities) for education and research. IC lasers have been used by several groups for practical applications such as chemical sensing and selected for NASA flight mission to Mars. He has authored/co-authored more than 90 refereed journal articles and one book chapter with 3 patents and over 100 conference contributions.

14. Honors and Awards

Laurent Bellaiche 21st Century Professor in Nanotechnology and Science Education at UA. Inna Ponomareva, invited talk at the 2008 APS March Meeting, New Orleans (LA).

Jak Chakhalian Jian Liu, INBRE Research Conference Award for the best poster (2008).

Henry Fu Yanpeng Yao, a graduate student, awarded the first prestigious Hughes fellowship in physics department.

Matthew Johnson Ted and Cuba Webb Presidential Professor at OU

Patrick McCann Lee Elizondo, First place poster (Engineering category), OU Annual Research and Performance Day, March 2008.

Sheena Murphy Joseph P. Brandt Associate Professor of Physics

Gregory Salamo Baum Award for Excellence Teaching – Highest university teaching award given to only one faculty member of the University, at large, each year.

Min Xiao Co-Chair of the 2007 Quantum Electronics and Laser Science Conference

Min Zou Hengyu Wang, STLE First Place Best Post Award, STLE/ASME International Joint Tribology Conference, 2008. Ying Song, UA Mechanical Engineering Graduate Symposium Best Poster Award, 2008.

Oklahoma/Arkansas MRSEC, DMR-0520550

FIG. (a) surface smoothness using new technique; (b) conventional technique; (c)

defect comparison

Achievement: New Technique to control defect states in substrates. The resulting surface quality of SrTiO3 obtained by the new ‘Arkansas procedure’ vs. the conventional BHF based method shows exceptional smoothness of the surface (<80 pm) and most importantly the level of surface defects 10 times as low compared to the previous BHF technique A. APL 93, 061909 (2008). These experimental findings will have particular significance for the growth of high-quality ultrathin complex oxide heterostructures and the innovation of a new era of electronic devices.

(c)

CSPIN IRG2, Univ. of Oklahoma and Univ. of Arkansas, DMR-0520550

Semiconductors with narrow energy gaps have properties that are advantageous for electronic and photonic device applications. For example, the switching speeds of field-effect transistors are improved by a high carrier mobility and the wavelength range of infrared detectors can be widely tuned by strong confinement effects. In addition to these traditional devices, we are studying devices that take advantage of spin-orbit effects. This year’s accomplishments include demonstration of InAs/AlSb/GaSb interband cascade lasers with an emission wavelength at 150K of 5.9 µm, which is now the longest wavelength achieved by III-V interband diode lasers. We also realized two-dimensional hole systems in InSb, with an effective mass (~0.04me) among the smallest ever reported for holes.

By growing InAs/AlSb/GaSb epilayers on a plasmon waveguide structure on an InAs substrate, we extended the wavelength range of interband cascade lasers to 5.9 µm.

Electronic and Photonic Device Applications for Narrow Gap Semiconductors

5600 5650 5700 5750 5800 5850 59000.0

0.2

0.4

0.6

0.8

1.0

Inte

nsity

(a.u

.)Wavelength (nm)

82K136mA

100K193mA

120K301mA

140K515mA

150K696mA

CW

150µmx1.86mm

Oklahoma/Arkansas MRSEC, DMR-0520550

(a) portable scanning electron microscope to examine (b) an ant leg during a math/science lesson on scaling. They learned that if this ant was as large as a person it’s leg would only be about 20 millimeters across.

Achievement: New Portable SEM for K-12 math/science inquiry lessons.Graduate students at the University of Arkansas bring cutting edge technology to local middle school students and allow them to explore the world of nanoscience in real-time. The MRSEC graduate students with the help of an education outreach program from the FEI, electron microscopy company were able to bring a portable scanning electron microscope (SEM) into the classrooms of local middle schools. The SEM allows the students, with their own hands, to explore the world of the “nano.”

(a)

(b)

MRSEC graduate students give middle school students the opportunity to use

16. Statement of Unobligated Funds

University of ArkansasAs of Feb. 28, 2009, 79% of the grant budget and 87% of the cost share was spent or committed. This leaves unobligated funds in the amount of $485,175 for the grant and $263,362 for the cost share. Since we have a sub award off of the grant our new budget usually isn’t in place until the end of June. By June 30 we will have spent or committed 87% of grant and 90% of the cost share. This leaves unobligated funds in the amount of $361,726 for the grant and $220,813 for the cost share. University of Oklahoma We delayed some equipment expenditures to wait funding decisions from the IMR-MRI program. We are now in the process of procuring the necessary equipment (see section 18)

Closing Year Spent

ORGANIZATIONC-Spin MRSECMatthew B. Johnson

PI Research Education

Knowledge Transfer to

Industry and Other

Sectors Facilities Adminstration TotalThe fields in red with yellow background are computed automatically.

A. SENIOR PERSONNEL: Pl/PD, Co-Pl's, Faculty and Other Senior Associates(List each separately with title, A.7. show number in brackets)

1 PI/PD 0 0 0 0 0 02 co-PI 0 0 0 0 0 03 co-PI 0 0 0 0 0 04 co-PI 0 0 0 0 0 05 co-PI 0 0 0 0 0 06 ( ) OTHERS (LIST INDIVIDUALLY ON BUDGET JUSTIFICATION PAGE) 0 0 0 0 0 07 ( ) TOTAL SENIOR PERSONNEL (1-6) 0 0 0 0 0 0

B. OTHER PERSONNEL (SHOW NUMBERS IN BRACKETS)1 (3 ) POST DOCTORAL SCHOLARS 46,030 15,343 61,3732 ( 2) OTHER PROFESSIONALS (TECHNICIAN, PROGRAMMER, ETC.) 11,690 13,853 25,5433 (6 ) GRADUATE STUDENTS 52,605 17,535 70,1404 ( 2) UNDERGRADUATE STUDENTS 4,110 1,370 5,4805 ( ) SECRETARIAL - CLERICAL (IF CHARGED DIRECTLY)6 ( ) OTHER

TOTAL SALARIES AND WAGES (A+B) 102,745 13,060 32,878 13,853 162,536C. FRINGE BENEFITS (IF CHARGED AS DIRECT COSTS) 10,873 2,535 3,609 2,986 20,004

TOTAL SALARIES, WAGES AND FRINGE BENEFITS (A+B+C) 113,617 15,595 36,488 16,839 182,539

D. EQUIPMENTTOTAL EQUIPMENT 11,800 2,121 7,080 21,000

E. TRAVEL 1. DOMESTIC (INCL. CANADA MEXICO AND U.S. POSSESSIONS) 3,097 516 258 258 4,129 2. FOREIGN

F. PARTICIPANT SUPPORT COSTS1. STIPENDS 5,001 5,0012. TRAVEL3. SUBSISTENCE4. OTHER( ) TOTAL PARTICIPANT COSTS 5,001 5,001

G. OTHER DIRECT COSTS1. MATERIALS AND SUPPLIES 15,004 3,001 750 9,002 2,251 30,0082. PUBLICATION COSTS/DOCUMENTATION/DISSEMINATION 1,750 250 2,0003. CONSULTANT SERVICES4. COMPUTER SERVICES5. SUBAWARDS 569,956 63,886 633,8426. OTHER (Tuition) 6,082 2,027 8,110TOTAL OTHER DIRECT COSTS 592,792 5,278 750 9,002 66,137 673,960

H. TOTAL DIRECT COSTS (A THROUGH G) 721,306 28,511 1,008 52,570 83,234 886,629I. INDIRECT COSTS (SPECIFY RATE AND BASE)

Base 1a (not including D, F, G5, G6) Base 1b (part or all of G5 and G6, if appropriate) Base 1 133,468 19,362 1,008 45,490 19,348 218,677 Rate 1 0.480 Base 2 (for, e.g., off-campus rate) Rate 2 (for, e.g., off-campus rate) Base 3 (part or all of F if appropriate) Rate 3TOTAL INDIRECT COSTS 64,065 10,544 484 21,835 9,287 106,215

J. TOTAL DIRECT AND INDIRECT COSTS (H + I) 785,371 39,055 1,492 74,405 92,521 992,845K. RESIDUAL FUNDSL. AMOUNT OF THIS REQUEST (J) OR (J MINUS K) 785,371 39,055 1,492 74,405 92,521 992,845

M. COST SHARING PROPOSED LEVEL $ 585,456 433,431 12,139 10,694 100,000 29,191 585,455Pl/PD NAME

ORG. REP. NAME*

Requested Year Budget

ORGANIZATIONC-Spin MRSECMatthew B. Johnson

PI Name Research Education


Industry and Other Sectors Facilities Adminstration Total

SENIOR PERSONNEL: Pl/PD, Co-Pl's, Faculty and Other Senior Associates(List each separately with title, A.7. show number in brackets)PI/PD 0co-PI 0co-PI 0co-PI 0co-PI 0( ) OTHERS (LIST INDIVIDUALLY ON BUDGET JUSTIFICATION PAGE) 0( ) TOTAL SENIOR PERSONNEL (1-6) 0OTHER PERSONNEL (SHOW NUMBERS IN BRACKETS)(3 ) POST DOCTORAL SCHOLARS 78,750 29,400 108,150(2 ) OTHER PROFESSIONALS (TECHNICIAN, PROGRAMMER, ETC.) 20,000 26,360 46,360(6) GRADUATE STUDENTS 94,000 33,308 0 127,308(2) UNDERGRADUATE STUDENTS 7,031 3,578 10,609( ) SECRETARIAL - CLERICAL (IF CHARGED DIRECTLY) 0( ) OTHER 0TOTAL SALARIES AND WAGES (A+B) 179,781 23,578 62,708 26,360 292,427FRINGE BENEFITS (IF CHARGED AS DIRECT COSTS) 32,564 7,588 0 12,054 9,911 62,117TOTAL SALARIES, WAGES AND FRINGE BENEFITS (A+B+C) 212,345 31,166 0 74,762 36,271 354,544

EQUIPMENTTOTAL EQUIPMENT 25,000 2,000 13,316 0 40,316

TRAVEL 1. DOMESTIC (INCL. CANADA MEXICO AND U.S. POSSESSIONS) 7,000 1,000 1,000 1,000 10,000 2. FOREIGN 0

PARTICIPANT SUPPORT COSTS1. STIPENDS 5,000 5,0002. TRAVEL 03. SUBSISTENCE 04. OTHER 0( ) TOTAL PARTICIPANT COSTS 5,000 5,000

OTHER DIRECT COSTS1. MATERIALS AND SUPPLIES 20,000 1,000 500 7,500 1,000 30,0002. PUBLICATION COSTS/DOCUMENTATION/DISSEMINATION 1,750 250 2,0003. CONSULTANT SERVICES 04. COMPUTER SERVICES 05. SUBAWARDS 552,442 0 0 0 97,558 650,0006. OTHER (Tuition) 11,700 4,850 16,550TOTAL OTHER DIRECT COSTS 585,892 6,100 500 7,500 98,558 698,550

TOTAL DIRECT COSTS (A THROUGH G) 830,236 45,266 1,500 95,578 135,829 1,108,409INDIRECT COSTS (SPECIFY RATE AND BASE) Base 1a (not including D, F, G5, G6) 0 Base 1b (part or all of G5 and G6, if appropriate) Base 1 241,095 33,416 1,500 82,262 38,271 396,544 Rate 1 0.480 Base 2 (for, e.g., off-campus rate) 0 Rate 2 (for, e.g., off-campus rate) Base 3 (part or all of F if appropriate) 0 Rate 3TOTAL INDIRECT COSTS 115,725 17,290 720 39,486 18,370 191,591TOTAL DIRECT AND INDIRECT COSTS (H + I) 945,962 62,556 2,220 135,063 154,200 1,300,000RESIDUAL FUNDS 0AMOUNT OF THIS REQUEST (J) OR (J MINUS K) 945,962 62,556 2,220 135,063 154,200 1,300,000

COST SHARING PROPOSED LEVEL $ 433,237 17,564 17,564 87,818 29,273 585,455Pl/PD NAME

ORG. REP. NAME*

The fields in red with yellow background are computed automatically.

Current Year 3/13/2009

University of ArkansasCSPIN MRSECGregory J. Salamo

PI Research Education


Industry and Other

Sectors Facilities Adminstration TotalThe fields in red with yellow background are computed automatically.



B. OTHER PERSONNEL (SHOW NUMBERS IN BRACKETS)1 (6) POST DOCTORAL SCHOLARS 154,610 154,6102 (1) OTHER PROFESSIONALS (TECHNICIAN, PROGRAMMER, ETC.) 30,629 30,6293 (5) GRADUATE STUDENTS 83,146 83,1464 ( ) UNDERGRADUATE STUDENTS 05 ( ) SECRETARIAL - CLERICAL (IF CHARGED DIRECTLY) 06 ( ) OTHER 0

TOTAL SALARIES AND WAGES (A+B) 237,756 0 0 0 30,629 268,385C. FRINGE BENEFITS (IF CHARGED AS DIRECT COSTS) 38,430 7,777 46,207

TOTAL SALARIES, WAGES AND FRINGE BENEFITS (A+B+C) 276,186 0 0 0 38,406 314,592

D. EQUIPMENTTOTAL EQUIPMENT 0

E. TRAVEL 1. DOMESTIC (INCL. CANADA MEXICO AND U.S. POSSESSIONS) 0 2. FOREIGN 0

F. PARTICIPANT SUPPORT COSTS1. STIPENDS 02. TRAVEL 03. SUBSISTENCE 04. OTHER 0( ) TOTAL PARTICIPANT COSTS 0 0 0 0 0 0

G. OTHER DIRECT COSTS1. MATERIALS AND SUPPLIES 39,085 39,0852. PUBLICATION COSTS/DOCUMENTATION/DISSEMINATION 03. CONSULTANT SERVICES 04. COMPUTER SERVICES 05. SUBAWARDS 06. OTHER (GRA tuition) 33,310 33,310TOTAL OTHER DIRECT COSTS 72,395 0 0 0 0 72,395

H. TOTAL DIRECT COSTS (A THROUGH G) 348,581 0 0 0 38,406 386,987I. INDIRECT COSTS (SPECIFY RATE AND BASE)

Base 1a (not including D, F, G5, G6) 0 Base 1b (part or all of G5 and G6, if appropriate) 315,271 0 0 0 38,406

B 1 0 0 0 0 0 0

Requested budget 3/13/2009

University of ArkansasC-SPIN MRSECGregory J. Salamo

PI Name Research Education


Industry and Other

Sectors Facilities Adminstration Total



B. OTHER PERSONNEL (SHOW NUMBERS IN BRACKETS)1 (6) POST DOCTORAL SCHOLARS 232,915 232,9152 (1) OTHER PROFESSIONALS (TECHNICIAN, PROGRAMMER, ETC.) 55,456 55,4563 (5) GRADUATE STUDENTS 76,690 76,6904 ( ) UNDERGRADUATE STUDENTS 05 ( ) SECRETARIAL - CLERICAL (IF CHARGED DIRECTLY) 06 ( ) OTHER 0

TOTAL SALARIES AND WAGES (A+B) 309,605 0 0 0 55,456 365,061C. FRINGE BENEFITS (IF CHARGED AS DIRECT COSTS) 58,246 13,247 71,493

TOTAL SALARIES, WAGES AND FRINGE BENEFITS (A+B+C) 367,851 0 0 0 68,703 436,554

D. EQUIPMENTTOTAL EQUIPMENT 0

E. TRAVEL 1. DOMESTIC (INCL. CANADA MEXICO AND U.S. POSSESSIONS) 0 2. FOREIGN 0

F. PARTICIPANT SUPPORT COSTS1. STIPENDS 02. TRAVEL 03. SUBSISTENCE 04. OTHER 0( ) TOTAL PARTICIPANT COSTS 0 0 0 0 0 0

G. OTHER DIRECT COSTS1. MATERIALS AND SUPPLIES 331 3312. PUBLICATION COSTS/DOCUMENTATION/DISSEMINATION 03. CONSULTANT SERVICES 04. COMPUTER SERVICES 05. SUBAWARDS 06. OTHER (GRA tuition) 29,623 29,623TOTAL OTHER DIRECT COSTS 29,954 0 0 0 0 29,954

H. TOTAL DIRECT COSTS (A THROUGH G) 397,805 0 0 0 68,703 466,508I. INDIRECT COSTS (SPECIFY RATE AND BASE)

Base 1a (not including D, F, G5, G6) 0 Base 1b (part or all of G5 and G6, if appropriate) 368,182 0 0 0 68,703 436,885 Base 1 0 0 0 0 0 0 Rate 1 0.420 0.420 0.420 0.420 0.420 Base 2 (for, e.g., off-campus rate) 0 Rate 2 (for, e.g., off-campus rate) Base 3 (part or all of F if appropriate) 0 Rate 3TOTAL INDIRECT COSTS 154,637 0 0 0 28,855 183,492

J. TOTAL DIRECT AND INDIRECT COSTS (H + I) 552,442 0 0 0 97,558 650,000K. RESIDUAL FUNDS 0 0 0 0 0 0L. AMOUNT OF THIS REQUEST (J) OR (J MINUS K) 552,442 0 0 0 97,558 650,000

M. COST SHARING PROPOSED LEVEL $ 631,315Pl/PD NAME

ORG. REP. NAME*

APPENDIX A

NSF MRSEC Other NSF Other Fed. Gov.

Other Non-University

NSF MRSEC Other NSF Other Fed. Gov.

Other Non-University

Dept.Chemistry

Peng 2 0.5 44.424 20.247 67.475

Tian 11.051 39.675

Electrical Engineering

Manasreh 1.67 1.33 27.972 242.211

McCann 10.650

Shi 6.386 33.649 162.282

Yang 10.000 33.649 162.282

Mechanical Engineering

Zou 1 33.902 103.816 7.322

PhysicsBellaiche 0.75 2.25 75.993 67.238 218.947

Chakhalian 1.5 1.5 40.595 6.629 239.818

Fu 1.5 16.141 52.05

Li 1.5 40.696 82.845

Salamo 1.83 1.17 239.259 118.020 264.409

Xiao 1.5 0.5 1 11.051 89.935 7.748

Johnson 1 30.000 121.135

Bumm 1 1 20.480 159.739 61.122

Doezema 5.000 28.761

Mason 2 349.480

Mullen 13.704 36.641

Murphy 1 1 30.000 54.715

Santos 1.5 1 25.705 54.715 74.487

Xie 5.000

Support of NSF-MRSEC Faculty (or equivalent for nonacademic participants) for the Current Award Period

Please list faculty names by academic department (or equivalent)Person-Months of Support (Academic Year and Summer) Total Dollar Support ($k)

APPENDIX B

Center: C-SPIN (OU/UA) Current Year Period 3/1/2008 – 2/28/2009

Designation Total Female Underrepresented Minority

Faculty participants total 23 4 1salaried 1 0 0

Faculty participants Affiliationphysics 15 2 1materials science 0 0 0chemistry 4 0 0biological sciences 0 0 0geological sciences 0 0 0mathematics 0 0 0electrical engineering 4 0 0chemical engineering 0 0 0mechanical engineering 1 1 0other engineering 0 0 0other science 0 0 0

Postdocs total 13.5 1 0

Graduate Students total 28 6 1

Undergraduate Students total 14 4 0

Technical Support Staff total 5 0 0

Nontechnical Support Staff 3.5 1 2

Number of faculty (or equivalent for nonacademic participants), the participants' departmental affiliation, postdocs, graduate students, undergraduates, and support staff in the MRSEC, showing number of women and members of underrepresented minority groups. For information on which ethnic and minority groups constitute URMs, see for example: http://www.nsf.gov/od/broadeningparticipation/nsf_frameworkforaction_0808.pdfNOTE: (1) The salaried faculty participants are those who receive faculty salary support.(2) The sum of faculty participant affiliation in the ten departments should be the same as the faculty participants near the top of the table. Pick one department affiliation for faculty with multiple affiliations.

CENTER PARTICIPANTS

APPENDIX C

Center: C-SPIN (OU/UA) Current Year Period: 03/01/2007 - 02/28/2008

Designation Number of Active Participants

REU Students total 1female 0underrepresented minority 0

RET teachers total 2female 1underrepresented minority 0

Other Pre-College Teachers total 0female 0underrepresented minority 0

Undergraduate Faculty total 1female 0underrepresented minority 0

MRSEC funds for stipend (not

supplies)

Number of Impacted

Participants K-12 Students total 4 1200female 2 602underrepresented minority 1 408

$KBreakout of MRSEC Educational Funds (do not include supplement)K-12 54.396MRSEC REU support 5.000Other Undergraduate support 5.000RET support, not supplement 2.000Informal Science 1.000Total Education Outreach (same as Education Budget page) 67.396

REU and RET Site support (separate NSF award) 261.922

REU and RET supplements 0.000

Total MRSEC support for underrepresented minority programs 0.000

EDUCATION OUTREACH

Appendix D1

Center: C-SPIN (OU/UA)

Current Year Proposed YearReporting period 03/01/08 to 02/28/09Designation $K $K

Cost SharingState 562.529 577.123Local 0.000 0.000Foundation 0.000 0.000Industry 0.000 0.000University 637.717 639.647International 0.000 0.000Other 0.000 0.000

Total Cost Sharing (same as line M in Budget) 1200.246 1216.770

Annual Report 3/1/08-12/21/08

Salary & Fringe 134,461 Materials & Supplies 87,571 Other Direct Costs 11,481 Travel 10,001 Equipment 219,556 Total Direct 355,296 Indirect 463,073 Total 198,771

Committed on 02/98/2008 661,845

Summary Table of annual dollar levels of support (or dollar equivalent): Cost sharing support of the MRSEC for the current closing and proposed year from each of the following sources (the total must equal line M in the respective Total MRSEC Budgets):

Cost sharing explanation page: Please attach a brief list of cost sharing allocations (i.e., how cost sharing funds were spent: faculty salary, student support, equipment, etc).

MRSEC Cost Share

COST SHARING

Appendix D1

Appendix D2


Current Year Proposed YearReporting period: 03/01/08 – 02/28/09Designation $K $K

Cost Contributions (support not on line M)Other NSF 0.000 0.000Other Federal 0.000 0.000State 0.000 0.000Local 0.000 0.000Foundation 0.200 0.000Industry 2.516 0.000University 16.200 1.200International 0.000 0.000Other 0.000 0.000

Total Cost Contributions 18.916 1.200

Appendix D2

MRSEC Cost Contribution

Local

FoundationStudent SalaryFood for SeeS and Science Zone 0.200

University

Room Conversion for SEM OU 5.000

Summary Table of annual dollar levels of support (or dollar equivalent): Cost contributions; i.e. complementary support for MRSEC activities not listed on line M in the budget. The MRSEC effort can be augmented by other sources, which may include cash contributions, sponsored projects to the Center, equipment donations, laboratory renovations, etc. Note: Do not include sponsored projects to the individual faculty members, even if they are related to the core mission.

COST CONTRIBUTIONS

Cost contribution explanation page: Please attach a brief list of cost contributions (i.e., how cost sharing funds were spent: faculty salary, student support, equipment, etc). Do not include buildings.

APPENDIX E

Center: C-SPIN (OU/UA) Current Year Period: 03/1/08 – 02/28/09

Designation Number Current Year

Cumulative Totals for this

Award

Publications from IRGs and SeedsPrimary MRSEC Support 35 121Partial MRSEC Support 34 116Number of Primary and Partial Publications co-authored by 2 or more Center faculty level participants 8 39Shared Facilities 4 19

PatentsAwarded 0 1Pending 1 2Licensed 0 0

OUTPUT

APPENDIX E, cont'd

Center: C-SPIN (OU/UA) Current Year Period: 03/1/08 – 02/28/09

Next position Number Current

Year

Cumulative Totals for this Award

Number Current

Year


Number Current

Year


Academic Inst. 1 1 3 10 3 7National Labs 1 1 1 1 0 0Industry 2 4 1 1 0 2Non-science 1 1 0 0 0 0No data/no job 1 3 0 0 1 0Total 5 9 5 12 4 9

Women 2 1 0 2 2 1URM (All) * 0 0 1 2 0 0URM (US) * 0 0 1 2 0 0

OUTPUT

For information on which ethnic and minority groups constitute URMs, see for example: http://www.nsf.gov/od/broadeningparticipation/nsf_frameworkforaction_0808.pdf

* URM = Under-Represented Minorities in Science Technology Engineering and Mathematics (STEM). Please report two numbers for graduate students and post-docs: all URM and those that are US citizens or Permanent Resident Aliens.

Terminal Masters Students Graduated

Ph.D. Students Graduated

Post-doctors Completed Study

APPENDIX FCollaborations - see Item 3. in the Guidelines.

Center: C-SPIN (OU/UA) Date: 03/01/2008 - 02/29/2009

Designation Numbers

Collaborators (in addition to center participants)

Academic Institutions 23Academic collaborators 26

National Labs 8National Lab collaborators 8

Industry groups 5Industry collaborators 6

Users of Shared Facilities (in addition to center participants)Academic Institutions 4Academic collaborators 6

National Labs 0National Lab collaborators 0

Industry groups 1Industry collaborators 1

COLLABORATIONS

APPENDIX G

MRSEC SUPPORT


Designation $K Current award period

% of total budget

$K Requested award period

% of total budget

IRG 1 399.828$ 40% 468.039$ 36%IRG 2 253.268$ 25% 332.586$ 26%Additional IRGs as appropriateTotal all IRGsSeeds and Emerging Areas 117.602$ 12% 145.337$ 11%Total Research (IRGs + SEED) 770.698$ 76% 945.962$ 73%Education Activities and Human Resources 39.055$ 4% 62.556$ 5%Outreach and Knowledge Transfer 1.492$ 0.1% 2.220$ 0.2%Shared Experimental and Computational Facilities 74.405$ 7% 135.063$ 10%MRSEC Administration 123.352$ 12% 154.199$ 12%Other -$ 0% -$ 0%

Total 1,009.002$ 100% 1,300.000$ 100%

Shared facilities equipment 7.080$ 1% 13.316$ 1%Other equipment 13.920$ 1% 27.000$ 2%Total equipment 21.000$ 2% 40.316$ 3%

Technical staff supported by Center 1 1

Requested NSF MRSEC support by IRG and other activities for both the current and the requested award period. Note: For each entry in the Table, include indirect costs. Subtotals for Research, Education Activities and Human Resources, Outreach and Knowledge Transfer, Shared Equipment and Computational Facilities, and Administration should be the same as those reported in the breakout budget Excel Spreadsheet. Include major capital equipment under shared experimental facilities. Support for graduate students should normally be included under research, not under education and human resources.

APPENDIX H

MRSEC Leveraged SUPPORT (current award period)

Center: C-SPIN (OU/UA) Current Year Period 03/01/2008 - 02/28/2009

Des

igna

tion

NSF

MR

SEC

(S

ame

as in

App

endi

x G

)

Cos

t sha

ring

(sam

e to

tal a

mou

nt a

s in

A

ppen

dix

D1)

Cos

t con

trib

utio

ns (s

ame

tota

l am

ount

as

in

Appe

ndix

D2)

Tota

l all

sour

ces

of

Supp

ort

(sum

of 3

col

umns

)

$K $K $K $KIRG 1 399.828$ 419.238$ -$ 819.066$ IRG 2 253.268$ 342.114$ 2.516$ 597.898$ Total all IRGs 653.096 761.352$ 2.516 1,416.964$ Seeds and Emerging Areas 117.602$ 124.361$ -$ 241.963$

Total Research (IRGs + SEED) 770.698$ 885.713$ 2.516$ 1,658.927$ Education Activities and Human Resources Shared 39.055$ 12.139$ 1.400$ 52.594$ Knowledge Transfer (industry and others) 1.492$ 10.694$ -$ 12.186$ Shared Experimental and Computational Facilities 74.405$ 262.509$ 15.000$ 351.914$ MRSEC Administration 123.352$ 29.191$ -$ 152.543$ Other -$ -$ -$ -$

Total 1,009.002$ 1,200.246$ 18.916$ 2,228.164$

Shared facilities equipment 7.080$ 200.000$ -$ 207.080$ Other equipment 13.920$ 50.000$ -$ 63.920$ Total equipment 21.000$ 250.000$ -$ 271.000$

Technical staff supported by Center 1 1 0 2

Additional support that leverages NSF MRSEC support and how this additional support is spent in the Center on an annual basis (Total MRSEC award / 6). This additional support consists of cost sharing and cost contributions as defined in Appendices D1 and D2. The numbers provided in this table should be consistent with those in appendices D1, D2, and G.

APPENDIX I Partnering Institutions

Center: C-SPIN Current Year Period 03/01/2008 - 02/28/2009

Indicate nature of financial support and type of partnering institution (more than one box may be checked)

Name of Institution

Receives Financial Support

from center

Contributes financial

support to the center

Minority Serving

institution Partner

Female Serving

InstitutionPartner

National Lab/other

govt Partner

Industry Partner

Museum Partner

InternationalPartner

I. Academic Partnering Institutions

University of Arkansas at Pine Bluff

X X

Humboldt University X

Université de Frauche-Comte

X

University of Central Florida

Carl Von Ossietzky University

X

Université d'Auvergne X

Total Number Academic Partners 6

1

1

4

II. Non-academic Partnering Institutions Texas Instruments

X

X

Argonne National Lab X Oak Ridge Nat. Lab X

Total Number Non-academic Partners 2

1

2

1

Total Number of academic and non-academic partners 8

1

1

1

2

1

4

Appendix J The NSF seeks to support transformative research, http://www.nsf.gov/pubs/2007/in130/in130.jsp. The MRSEC Seed program should in particular pursue high impact, high risk projects. Please list the titles of all Seed projects since the start of the current award. Indicate the expectations for the seed at the time of award, the result of this investment, and whether or not the work can be categorized as transformative. If transformative, add a footnote describing why.

SEEDS Title of Seed Projects Expectation(s) Outcomes Date

started (mm/yy)

Date ended (mm/yy)

Inte

grat

e in

to

IRG

Nuc

leat

e ne

w

IRG

Brin

g ne

w fa

culty

in

to th

e ce

nter

Oth

er (S

peci

fy)

Tra

nsfo

rmat

ive

Scie

nce?

In

tegr

ated

into

IR

G

Nuc

leat

ed n

ew

IRG

Attr

acte

d ex

tern

al

fund

s

Oth

er (S

peci

fy)

Nano-Textured Surfaces for Tribological and Opto-Electronic Applications (Zou, Johnson)

01/06 present X X

Characterization of Solid State Nanopore 3D Structure by High Resolution TEM (Li)

10/06 present X X X

Fundamental Studies of Model Molecular Plasmonic Devices; (Bumm, Halterman)

10/06 present X X

Ion Transport in Polymer and Organic Liquid Electrolytes; (Frech, Wheeler)

08/08 present X

Totals Li- Exploring New Methods for Sequencing Single DNA Molecules, if successful, it can lead to new technologies.

Appendix K Please list the name of all start-up companies based on MRSEC research from this and previous MRSEC, MRL, and MRG award periods. Company Name Year of

establishment Brief Name of IRG or SEED where research originated

Estimated Number of Employees

City, State, Zip Website

NNLabs 2001 IRG 1 15 Fayetteville, AR 72701 www.nn-labs.com Minatour Technologies, LLC

2003 IRG 1 2 Fayetteville, AR 72701 None

Nanolight Inc 2004 IRG 2: 1 Nanolight, Inc. 710 Asp Ave., Suite 303 Norman, OK 73069

www.nano-light.com

Ekips 2000 IRG 2 6 710 Asp Ave., Suite 303 Norman, OK 73069

ekipstech.com

Phononic Devices 2008 IRG 2 3 3340 Hillview Avenue Palo Alto, CA 94304

phononicdevices.com

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