California Institute of Technology MRSEC 0520565
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Graphene Atomic Switches for Ultracompact Logic Devices & Non- Volatile Memory Elements Sossina M. Haile, California Institute of Technology, DMR 0520565 California Institute of Technology MRSEC 0520565 Research Highlights: [1] The robustness of individual graphene-based atomic switches has been demonstrated, and a one-bit memory cell based on the “rank coding” concept has been successfully built with two graphene atomic switches, as detailed in the paper by B. Standley et al. (2008) and summarized in Fig. 1; [2] Direct spatial correlation between the surface corrugation-induced strain-field (S 0 , S xx , S xy , S yy ,) maps of a graphene-on-SiO 2 sample and the tunneling conductance modulations at constant bias voltages (V B ) has been demonstrated by means of STM, as shown in Fig. 2 and detailed in M. L. Teague et al. (2009). Education: • Graduate students : Marcus L. Teague, Andrew D. Beyer, Cameron R. Hughes, Brain Standley • Undergraduate student : Andrew P. Lai Publication: • B. Standley et al., Nano Lett. 8, 3345 (2008). Preprint: • M. L. Teague et al., arXiv: 0903.2327 (2009). S xx S 0 S yy S xy Fig.2: Manifestation of direct spatial correlation between the surface corrugation- induced strain fields of a graphene-on-SiO 2 sample and the tunneling conductance (dI/dV) taken at constant bias voltages (V B ) over the same sample area. Topograph y V B = 0 V B = 80 meV V B = 240 meV V W1 (V) V W2 (V) V R (mV ) V o (mV) Time (s) Strain maps Fig.1: Schematics of a rank coding cell for one-bit information storage using two graphene-based atomic switches G1 & G2.
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V W1 (V). V W2 (V). V R (mV). V o (mV). Topography. V B = 0. V B = 80 meV. V B = 240 meV. Graphene Atomic Switches for Ultracompact Logic Devices & Non-Volatile Memory Elements Sossina M. Haile, California Institute of Technology, DMR 0520565. - PowerPoint PPT Presentation
Transcript of California Institute of Technology MRSEC 0520565
Graphene Atomic Switches for Ultracompact Logic Devices & Non-Volatile Memory Elements
Sossina M. Haile, California Institute of Technology, DMR 0520565
California Institute of Technology MRSEC 0520565
Research Highlights: [1] The robustness of individual graphene-based atomic switches has been demonstrated, and a one-bit memory cell based on the “rank coding” concept has been successfully built with two graphene atomic switches, as detailed in the paper by B. Standley et al. (2008) and summarized in Fig. 1; [2] Direct spatial correlation between the surface corrugation-induced strain-field (S0, Sxx, Sxy, Syy,) maps of a graphene-on-SiO2 sample and the tunneling conductance modulations at constant bias voltages (VB) has been demonstrated by means of STM, as shown in Fig. 2 and detailed in M. L. Teague et al. (2009).
Education: • Graduate students: Marcus L. Teague, Andrew D. Beyer, Cameron R. Hughes, Brain Standley• Undergraduate student: Andrew P. Lai
Publication: • B. Standley et al., Nano Lett. 8, 3345 (2008).
Preprint: • M. L. Teague et al., arXiv: 0903.2327 (2009).
SxxS0
SyySxy
Fig.2: Manifestation of direct spatial correlation between the surface corrugation-induced strain fields of a graphene-on-SiO2 sample and the tunneling conductance (dI/dV) taken at constant bias voltages (VB) over the same sample area.
Topography VB = 0
VB = 80 meV VB = 240 meV
VW1
(V)
VW2
(V)
VR
(mV
)Vo
(mV
)
Time (s)
Strain maps
Fig.1: Schematics of a rank coding cell for one-bit information storage using two graphene-based atomic switches G1 & G2.
