Lateral Organic Devices MRSEC (Johns Hopkins University) DMR05-20491
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Lateral Organic Devices MRSEC (Johns Hopkins University) DMR05-20491 organic devices, from organic light emitting diodes to organic spintronic d , where the essential interfaces are buried and thus not subject to investig a novel fabrication method to fabricate lateral devices,as schematically sh ral geometry allows the application of a transverse field through the gate t he substrate, allowing the surface potentials at the junction to be probed d probe microscopy (SKPM) while the device is in operation. Fig.1: Schematics of a lateral device, also showing the molecular structures and their energy levels. Fig. 2: Variation of built-in potential with applied lateral voltage (forward and reverse) and gate terminal grounded. B. M. Dhar, G. S. Kini, G. Xia, B. J. Jung, N. Markovic, and H. E. Katz, “Field-effect-tuned lateral organic diodes,” Proceedings of the National Academy of Sciences 107, 3972 (2010).
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Lateral Organic Devices MRSEC (Johns Hopkins University) DMR05-20491. Background : Most organic devices, from organic light emitting diodes to organic spintronic devices vertical devices, where the essential interfaces are buried and thus not subject to investigation. - PowerPoint PPT Presentation
Transcript of Lateral Organic Devices MRSEC (Johns Hopkins University) DMR05-20491
Lateral Organic Devices MRSEC (Johns Hopkins University) DMR05-20491
Background: Most organic devices, from organic light emitting diodes to organic spintronic devicesvertical devices, where the essential interfaces are buried and thus not subject to investigation. This work: Using a novel fabrication method to fabricate lateral devices,as schematically shown inFig.1. The lateral geometry allows the application of a transverse field through the gate terminalat the back of the substrate, allowing the surface potentials at the junction to be probed directly usingScanning Kelvin probe microscopy (SKPM) while the device is in operation.
Fig.1: Schematics of a lateral device, also showingthe molecular structures and their energy levels.
Fig. 2: Variation of built-in potential with applied lateral voltage (forward and reverse) and gate terminal grounded.
B. M. Dhar, G. S. Kini, G. Xia, B. J. Jung, N. Markovic, and H. E. Katz, “Field-effect-tuned lateral organic diodes,”Proceedings of the National Academy of Sciences 107, 3972 (2010).
