Varactor theory
EE130/230A Discussion 6 Peng Zheng. Carrier Action under Forward Bias When a forward bias (V A >0) is applied, the potential barrier to diffusion across.
PN Junction Diodes. OUTLINE – PN junction under reveres bias – Electrostatics (cont’d) – I-V characteristics – Reverse breakdown – Small-signal model.
Spring 2007EE130 Lecture 21, Slide 1 Lecture #21 ANNOUNCEMENTS No coffee hour today Quiz #3 on Friday (March 9) –Material of HW #5 & #6 (Lectures 13-17)
EE130/230A Discussion 6
Lecture 9
Lecture 11
The Path to Full Geometry 3D Vacuum Arc Simulation
Lecture 14 OUTLINE pn Junction Diodes (cont’d) – Transient response: turn-on – Summary of important concepts – Diode applications Varactor diodes Tunnel.
P-N Junction Diodes Current Flowing through a Diode I-V Characteristics Quantitative Analysis (Math, math and more math)
p-n Junction I-V Characteristics
