1.Introduction and application. 2.Ion implantation tools. 3.Dopant distribution. 4.Mask thickness and lateral distribution. 5.Effect of channeling. 6.Damage.
Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability
4-1 FINAL for Tom Dillinger
Laser Testing of Silicon Detectors Rhorry Gauld University of Saint Andrews IPM program – PPD Mentor: Ronald Lipton 30/07/08 1.
Analytical Thermal Placement for VLSI Lifetime Improvement and Minimum Performance Variation Andrew B. Kahng †, Sung-Mo Kang ‡, Wei Li ‡, Bao Liu † † UC.
The electro-thermal properties of integrated circuit microbolometers
Dislocation-Interface Interactions in Silicon August 10 th, 2011 3PM Lucas Hale Post Doc Sandia National Laboratories, CA Jonathan Zimmerman, Xiaowang.
Radiation Damage Studies of Vertex Detector CCDs
Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.
Instrumentation Concepts Ground-based Optical Telescopes
CCP6 Conference on Computational Physics, Gyeongju, Republic of Korea, August 2006 Order-N DFT calculations with the Conquest code Michael J. Gillan 1,2,
MOSFET