IXYSPOWEREfficiency Through Technology
Very High Voltage Discrete Portfolio
P R O D U C T B R I E F
FROm ThE RECOgnIzED InDUsTRy lEaDER FOR DIsCRETE sEmICOnDUCTOR PRODUCTs aBOvE 2500v
aUgUsT 2009
OvERvIEW
DIsCRETE hIgh vOlTagE
IgBT maRkET
Graphic on the left illustrates IXYS’ IGBT device
portfolio dominance in the high voltage discrete
market. Closest major competitor offers only up to
1600V of collector emitter breakdown voltage.
DIsCRETE hIgh vOlTagE
mOsFET maRkET
Graphic on the right illustrates IXYS’
MOSFET device portfolio dominance
in the high voltage discrete market.
Closest major competitor offers
only up to 1200V of drain to source
breakdown voltage.
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www.ixys.com
As the new “Green-World Economy” unfolds, Design Engineers
are quickly transitioning to focus ever more effort upon
maximizing the efficiency of their designs, which is resulting in
a world-wide explosion of demand for Very-High-Voltage (VHV)
Power Semiconductor Devices.
This Product Brief introduces three proven families of VHV
Discrete Devices like no others currently available in the
Power Semiconductor Marketplace. These IGBT, MOSFET
and BiMOSFETTM Families provide cost-effective solutions for
applications requiring up to 4000V of power switching capability,
with current ratings from 0.3 Amperes to 180 Amperes!
Through the utilization of these components, Design Engineers
are provided with the ability to switch more power within a
smaller footprint than ever before possible; eliminating the
need to use multiple, lower-voltage, series-connected devices
in most higher-voltage designs. The result is a much simpler
system design, with improved reliability, a lower component
count, and a lower system cost – critical elements in the bulk of
higher-voltage applications today.
The world is transitioning, and efficiency is becoming a more
critical key for extending the lifespan and competitiveness of
designs in the marketplace. IXYS’ unique portfolio of Very-High-
Voltage Discrete Devices is standing by, ready to assist Design
Engineers in reaching beyond the circuits of yesteryear, and in
delivering more capability more elegantly than ever before.
ISOPLUS i4-Pak™
TO-268 (D3-Pak)
TO-264
PLUS 247
ISOPLUS 264
IXYS’ offers a unique portfolio of discrete 2500V, 3000V, and 4000V VHV IGBTs with collector current ratings spanning
from 5.5 Amperes to 180 Amperes (Tc=25˚C). The voltage and current ratings of these devices, coupled with simplified
MOS gate-control, allow the system designer to greatly reduce the complexity of many high voltage switching
designs.
These IGBTs enable the use of a single device in systems whose circuits previously used multiple, cascaded, lower-
voltage switches. Such device consolidation reduces the number of power devices, while also improving cost and
efficiency by eliminating complex drive and voltage balancing components. In systems whose circuits previously
utilized high voltage SCRs, the use of these VHV IGBTs provides the designer with a true switch for easy implementation
of signal modulation schemes, thus improving efficiency, simplifying wave shaping, and enabling load disconnection
for improved system safety. Traditional high voltage EMRs and discharge relays can also be replaced, reducing system
complexity and improving overall reliability.
Applications which stand to benefit from the combination of power and simplicity offered by these convenient IGBTs
includes high-voltage pulse circuits, capacitor discharge circuits, high-voltage power supplies, and laser and x-ray
generation systems. IXYS VHV IGBTs are also available in our proprietary ISOPLUSTM packaging, offering high isolation
capability (up to 4000V) and superior thermal performance. IXYS will also be offering a full range of high speed 2.5kV
IGBTs with hard-switching capabilities of up to 20khz in near future.
FEaTUREs
High blocking voltages �High peak current capability �High power density �Low saturation voltage �International standard and proprietary �IsOPlUsTm packages
aPPlICaTIOns
Pulser Circuits �Capacitor Discharge Circuits �High Voltage Power Supplies �High Voltage Test Equipment �Laser & X-ray Generators �
PartNumber
vCEs (v)
Ic25Tc=25°C
(a)
Ic90 Tc=90°C
(a)
Vce(sat) max Tj=25°C
(v)
tfityp(ns)
Eoff typTj=125°C
(mJ)
RthJCmax
(°C/W)Package
Style
IXGH2N250 2500 5.5 2 3.1 100 N/A 3.90 TO-247
IXGT2N250 2500 5.5 2 3.1 100 N/A 3.90 TO-268
IXGF20N250 2500 23 14 3.1 210 N/A 1.25 ISOPLUS i4-PakTM
IXGF25N250 2500 30 15 2.9 200 N/A 1.10 ISOPLUS i4-PakTM
IXGH25N250 2500 60 25 2.9 200 N/A 0.50 TO-247
IXGV25N250S 2500 60 25 2.9 200 N/A 0.50 PLUS220SMD
IXGT25N250 2500 60 25 2.9 200 N/A 0.50 TO-268 (D3-Pak)
IXGL75N250 2500 75 70 2.5 180 N/A 0.31ISOPLUS264
(ISOPLUS i5-PakTM)
IXGK75N250 2500 180 75 2.3 175 N/A 0.17 TO-264
IXGX75N250 2500 180 75 2.3 175 N/A 0.17 PLUS247
IXGH10N300 3000 18 14 3.5 210 N/A 1.25 TO-247
IXGF20N300 3000 22 14 3.2 210 N/A 1.25 ISOPLUS i4-PakTM
IXGF25N300 3000 27 16 3.0 500 N/A 1.10 ISOPLUS i4-PakTM
IXGF36N300 3000 36 18 2.7 540 N/A 0.78 ISOPLUS i4-PakTM
IXGF4N400 4000 N/A 4 Under Development ISOPLUS i4-PakTM
IXGF30N400 4000 30 15 3.1 514 N/A 0.78 ISOPLUS i4-PakTM
IXEL40N400 4000 N/A 40 4.0 450 220 0.33 ISOPLUS i5TM (HV)
IXGF54N400 4000 N/A 54 Under Development ISOPLUS i4-PakTM
Very High Voltage IGBTs
avaIlaBlEPaCkagEs
PLUS 220 SMD
TO-247
IXYS’ VHV N-Channel Power MOSFETs are specifically designed to address demanding, fast-switching applications
requiring blocking capabilities up to 4kV.
These VHV MOSFETs are also ideally suited for parallel operation due to the positive temperature coefficient of their
on-state resistance. Parallel operation with these devices provides a more cost-effective solution than employing
series-connected, lower-voltage MOSFETs. The reduction or replacement of multiple series-connected devices and
the associated gate drive circuitry commonly involved, simplifies design, improves reliability, and reduces over-all
system cost.
These VHV MOSFETs represent an optimal solution in applications such as laser and x-ray generation systems, high-
voltage power supplies, pulse circuits, high-voltage automated test equipment, and capacitor discharge circuits.
4kV device offerings feature high isolation capability (up to 4000V) with superior thermal performance.
Provides 2500V, UL recognized isolation with superior thermal performance (E153432).•
Improves temperature and power cycling capability.•
Cost effective clip mounting.•
* IXYS Patented Packages,
Patent No. 6,404,065; 6,404,065; 6,534,343; 6,583,505; 6,710,463; 6,731,002; 7,005,734
* For information regarding IXYS ISOPLUS packages, visit http://www.ixys.com/IXAN0022.pdf
Our line of proven ISOPLUSTM packaging provides for improved
creepage distance to simplify compliance with regulatory high-
voltage spacing requirements. The copper-bonded, isolated
ceramic substrate enhances overall device reliability by greatly
improving thermal and power cycling, and the isolated backside
simplifies mounting while yielding superior thermal impedance.
The molding epoxies utilized meet the UL 94V-0 flammability
classification.
Backed up with multiple U.S. Patents and UL recognition, the
ISOPLUSTM packaging advantage is available only from IXYS.
FEaTUREs
High blocking voltages �High power density �High peak current capability �Low saturation voltage �International standard and �proprietary ISOPLUSTm packages
aPPlICaTIOns
High Voltage Power Supplies �Capacitor Discharge Circuits �Pulser Circuits �Discharge Relays �High Voltage Test Equipment �Laser & X-ray Generators �
PartNumber
Vdssmax(v)
Id25Tc=25°C
(a)
Rds(on) max Tj=25°C
(W)
Cisstyp(pF)
Qg typ (nC)
trrtyp(ns)
RthJCmax
(°C/W)Pd
(W)Package
Style
IXTH1N250 2500 1.5 40 1660 41 2500 0.5 250 TO-247
IXTH02N250 2500 0.2 450 120 6.6 2200 2.2 57 TO-247
IXTV02N250S 2500 0.2 450 120 6.6 2200 2.2 57 PLUS220SMD
IXTF2N300 3000 2.0 Under Development ISOPLUS i4-PakTM
IXTF03N400 4000 0.3 Under Development ISOPLUS i4-PakTM
IXTF1N400 4000 1.0 60 2570 76 3500 0.87 160 ISOPLUS i4-PakTM
Bond wires
Leads
Copper Copper SolderCeramic
DCB
ChipMould
Very High Voltage MOSFETs
avaIlaBlEPaCkagEs
IsOPlUsTm Packages with Internal Alumina DCB Isolation*
www.ixys.comAugust 2009 PBVHVIGBTBIMOSFET 1.7
ISOPLUS i4-PakTM
TO-264
TO-247
TO-268
PLUS 247
IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking voltage capabilities of
up to 3kV with corresponding collector current ratings of up to 130 amperes. These new devices present higher
current capability than that found in traditional discrete 2.5kV/3kV MOSFETs and IGBTs, featuring a “free” intrinsic
body diode similar to that found in a MOSFET. HV BiMOSFETsTM are proving most useful in high-voltage applications
such as AC switches, circuit breakers, radar pulse modulators, power supplies, capacitor discharge circuits, and
laser and X-ray generation systems.
These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient
of both of its saturation voltage, and the forward voltage drop of its intrinsic diode an integrated body diode
from collector to emitter. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an
alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from
inflicting damage to the device.
IXYS High Voltage BiMOSFETsTM represent excellent candidates for any high-voltage, high-current applications
where traditional MOSFETs are typically utilized in series-parallel strings to overcome their voltage, current and on-
state limitations. Replacement of such series-parallel strings, (and associated gate drive circuitry), results in a much
simpler system design, with improved reliability, a lower component count, and a lower system cost.
FEaTUREsHigh blocking voltage �High power density �High current handling capability �Low conduction losses �MOS gate turn on for drive simplicity �International standard and proprietary �IsOPlUsTm packages
aPPlICaTIOnsRadar transmitter power supplies �Radar pulse modulators �Capacitor discharge circuits �High voltage power supplies �AC switches �HV circuit breakers �Pulser circuits �High voltage test equipment �Laser & X-ray generators �
PartNumber
vCEs(max)
(v)
Ic @25 Tc=25°C
(a)
Ic @ 90Tc=90°C
(a)
Vce (sat)typ Tj=25°C
(v)
tf typTJ=25°C
(ns)
R(th)JCmax
(°C/W)Package
Type
IXBH2N250 2500 5 2 3.5 182 3.90 TO-247
IXBT2N250 2500 5 2 3.5 182 3.90 TO-268
IXBX25N250 2500 55 25 3.3 510 0.42 PLUS247
IXBK64N250 2500 75 64 3.0 170 0.17 TO-264
IXBX64N250 2500 75 64 3.0 170 0.17 PLUS247
IXBF12N300 3000 22 12 3.2 530 1.25 ISOPLUS i4-PAKTM
IXBF20N300 3000 27 15 3.2 395 1.13 ISOPLUS i4-PAKTM
IXBH12N300 3000 30 12 3.2 530 0.78 TO-247
IXBT12N300 3000 30 12 3.2 530 0.78 TO-268
IXBF32N300 3000 40 22 3.2 630 0.78 ISOPLUS i4-PAKTM
IXBH20N300 3000 50 20 3.2 395 0.50 TO-247
IXBT20N300 3000 50 20 3.2 395 0.50 TO-268
IXBH32N300 3000 80 32 3.2 630 0.31 TO-247
IXBT32N300 3000 80 32 3.2 630 0.31 TO-268
IXBK55N300 3000 130 55 3.2 268 0.20 TO-264
IXBX55N300 3000 130 55 3.2 268 0.20 PLUS247
IXBF55N300 3000 130 55 3.2 268 0.20 ISOPLUS i4-PAKTM
BiMOSFETsTm
avaIlaBlEPaCkagEs
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