IXYSPOWEREfficiency Through Technology

Very High Voltage Discrete Portfolio

P R O D U C T B R I E F

FROm ThE RECOgnIzED InDUsTRy lEaDER FOR DIsCRETE sEmICOnDUCTOR PRODUCTs aBOvE 2500v

aUgUsT 2009

OvERvIEW

DIsCRETE hIgh vOlTagE

IgBT maRkET

Graphic on the left illustrates IXYS’ IGBT device

portfolio dominance in the high voltage discrete

market. Closest major competitor offers only up to

1600V of collector emitter breakdown voltage.

DIsCRETE hIgh vOlTagE

mOsFET maRkET

Graphic on the right illustrates IXYS’

MOSFET device portfolio dominance

in the high voltage discrete market.

Closest major competitor offers

only up to 1200V of drain to source

breakdown voltage.

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www.ixys.com

As the new “Green-World Economy” unfolds, Design Engineers

are quickly transitioning to focus ever more effort upon

maximizing the efficiency of their designs, which is resulting in

a world-wide explosion of demand for Very-High-Voltage (VHV)

Power Semiconductor Devices.

This Product Brief introduces three proven families of VHV

Discrete Devices like no others currently available in the

Power Semiconductor Marketplace. These IGBT, MOSFET

and BiMOSFETTM Families provide cost-effective solutions for

applications requiring up to 4000V of power switching capability,

with current ratings from 0.3 Amperes to 180 Amperes!

Through the utilization of these components, Design Engineers

are provided with the ability to switch more power within a

smaller footprint than ever before possible; eliminating the

need to use multiple, lower-voltage, series-connected devices

in most higher-voltage designs. The result is a much simpler

system design, with improved reliability, a lower component

count, and a lower system cost – critical elements in the bulk of

higher-voltage applications today.

The world is transitioning, and efficiency is becoming a more

critical key for extending the lifespan and competitiveness of

designs in the marketplace. IXYS’ unique portfolio of Very-High-

Voltage Discrete Devices is standing by, ready to assist Design

Engineers in reaching beyond the circuits of yesteryear, and in

delivering more capability more elegantly than ever before.

ISOPLUS i4-Pak™

TO-268 (D3-Pak)

TO-264

PLUS 247

ISOPLUS 264

IXYS’ offers a unique portfolio of discrete 2500V, 3000V, and 4000V VHV IGBTs with collector current ratings spanning

from 5.5 Amperes to 180 Amperes (Tc=25˚C). The voltage and current ratings of these devices, coupled with simplified

MOS gate-control, allow the system designer to greatly reduce the complexity of many high voltage switching

designs.

These IGBTs enable the use of a single device in systems whose circuits previously used multiple, cascaded, lower-

voltage switches. Such device consolidation reduces the number of power devices, while also improving cost and

efficiency by eliminating complex drive and voltage balancing components. In systems whose circuits previously

utilized high voltage SCRs, the use of these VHV IGBTs provides the designer with a true switch for easy implementation

of signal modulation schemes, thus improving efficiency, simplifying wave shaping, and enabling load disconnection

for improved system safety. Traditional high voltage EMRs and discharge relays can also be replaced, reducing system

complexity and improving overall reliability.

Applications which stand to benefit from the combination of power and simplicity offered by these convenient IGBTs

includes high-voltage pulse circuits, capacitor discharge circuits, high-voltage power supplies, and laser and x-ray

generation systems. IXYS VHV IGBTs are also available in our proprietary ISOPLUSTM packaging, offering high isolation

capability (up to 4000V) and superior thermal performance. IXYS will also be offering a full range of high speed 2.5kV

IGBTs with hard-switching capabilities of up to 20khz in near future.

FEaTUREs

High blocking voltages �High peak current capability �High power density �Low saturation voltage �International standard and proprietary �IsOPlUsTm packages

aPPlICaTIOns

Pulser Circuits �Capacitor Discharge Circuits �High Voltage Power Supplies �High Voltage Test Equipment �Laser & X-ray Generators �

PartNumber

vCEs (v)

Ic25Tc=25°C

(a)

Ic90 Tc=90°C

(a)

Vce(sat) max Tj=25°C

(v)

tfityp(ns)

Eoff typTj=125°C

(mJ)

RthJCmax

(°C/W)Package

Style

IXGH2N250 2500 5.5 2 3.1 100 N/A 3.90 TO-247

IXGT2N250 2500 5.5 2 3.1 100 N/A 3.90 TO-268

IXGF20N250 2500 23 14 3.1 210 N/A 1.25 ISOPLUS i4-PakTM

IXGF25N250 2500 30 15 2.9 200 N/A 1.10 ISOPLUS i4-PakTM

IXGH25N250 2500 60 25 2.9 200 N/A 0.50 TO-247

IXGV25N250S 2500 60 25 2.9 200 N/A 0.50 PLUS220SMD

IXGT25N250 2500 60 25 2.9 200 N/A 0.50 TO-268 (D3-Pak)

IXGL75N250 2500 75 70 2.5 180 N/A 0.31ISOPLUS264

(ISOPLUS i5-PakTM)

IXGK75N250 2500 180 75 2.3 175 N/A 0.17 TO-264

IXGX75N250 2500 180 75 2.3 175 N/A 0.17 PLUS247

IXGH10N300 3000 18 14 3.5 210 N/A 1.25 TO-247

IXGF20N300 3000 22 14 3.2 210 N/A 1.25 ISOPLUS i4-PakTM

IXGF25N300 3000 27 16 3.0 500 N/A 1.10 ISOPLUS i4-PakTM

IXGF36N300 3000 36 18 2.7 540 N/A 0.78 ISOPLUS i4-PakTM

IXGF4N400 4000 N/A 4 Under Development ISOPLUS i4-PakTM

IXGF30N400 4000 30 15 3.1 514 N/A 0.78 ISOPLUS i4-PakTM

IXEL40N400 4000 N/A 40 4.0 450 220 0.33 ISOPLUS i5TM (HV)

IXGF54N400 4000 N/A 54 Under Development ISOPLUS i4-PakTM

Very High Voltage IGBTs

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PLUS 220 SMD

TO-247

IXYS’ VHV N-Channel Power MOSFETs are specifically designed to address demanding, fast-switching applications

requiring blocking capabilities up to 4kV.

These VHV MOSFETs are also ideally suited for parallel operation due to the positive temperature coefficient of their

on-state resistance. Parallel operation with these devices provides a more cost-effective solution than employing

series-connected, lower-voltage MOSFETs. The reduction or replacement of multiple series-connected devices and

the associated gate drive circuitry commonly involved, simplifies design, improves reliability, and reduces over-all

system cost.

These VHV MOSFETs represent an optimal solution in applications such as laser and x-ray generation systems, high-

voltage power supplies, pulse circuits, high-voltage automated test equipment, and capacitor discharge circuits.

4kV device offerings feature high isolation capability (up to 4000V) with superior thermal performance.

Provides 2500V, UL recognized isolation with superior thermal performance (E153432).•

Improves temperature and power cycling capability.•

Cost effective clip mounting.•

* IXYS Patented Packages,

Patent No. 6,404,065; 6,404,065; 6,534,343; 6,583,505; 6,710,463; 6,731,002; 7,005,734

* For information regarding IXYS ISOPLUS packages, visit http://www.ixys.com/IXAN0022.pdf

Our line of proven ISOPLUSTM packaging provides for improved

creepage distance to simplify compliance with regulatory high-

voltage spacing requirements. The copper-bonded, isolated

ceramic substrate enhances overall device reliability by greatly

improving thermal and power cycling, and the isolated backside

simplifies mounting while yielding superior thermal impedance.

The molding epoxies utilized meet the UL 94V-0 flammability

classification.

Backed up with multiple U.S. Patents and UL recognition, the

ISOPLUSTM packaging advantage is available only from IXYS.

FEaTUREs

High blocking voltages �High power density �High peak current capability �Low saturation voltage �International standard and �proprietary ISOPLUSTm packages

aPPlICaTIOns

High Voltage Power Supplies �Capacitor Discharge Circuits �Pulser Circuits �Discharge Relays �High Voltage Test Equipment �Laser & X-ray Generators �

PartNumber

Vdssmax(v)

Id25Tc=25°C

(a)

Rds(on) max Tj=25°C

(W)

Cisstyp(pF)

Qg typ (nC)

trrtyp(ns)

RthJCmax

(°C/W)Pd

(W)Package

Style

IXTH1N250 2500 1.5 40 1660 41 2500 0.5 250 TO-247

IXTH02N250 2500 0.2 450 120 6.6 2200 2.2 57 TO-247

IXTV02N250S 2500 0.2 450 120 6.6 2200 2.2 57 PLUS220SMD

IXTF2N300 3000 2.0 Under Development ISOPLUS i4-PakTM

IXTF03N400 4000 0.3 Under Development ISOPLUS i4-PakTM

IXTF1N400 4000 1.0 60 2570 76 3500 0.87 160 ISOPLUS i4-PakTM

Bond wires

Leads

Copper Copper SolderCeramic

DCB

ChipMould

Very High Voltage MOSFETs

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IsOPlUsTm Packages with Internal Alumina DCB Isolation*

www.ixys.comAugust 2009 PBVHVIGBTBIMOSFET 1.7

ISOPLUS i4-PakTM

TO-264

TO-247

TO-268

PLUS 247

IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking voltage capabilities of

up to 3kV with corresponding collector current ratings of up to 130 amperes. These new devices present higher

current capability than that found in traditional discrete 2.5kV/3kV MOSFETs and IGBTs, featuring a “free” intrinsic

body diode similar to that found in a MOSFET. HV BiMOSFETsTM are proving most useful in high-voltage applications

such as AC switches, circuit breakers, radar pulse modulators, power supplies, capacitor discharge circuits, and

laser and X-ray generation systems.

These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient

of both of its saturation voltage, and the forward voltage drop of its intrinsic diode an integrated body diode

from collector to emitter. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an

alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from

inflicting damage to the device.

IXYS High Voltage BiMOSFETsTM represent excellent candidates for any high-voltage, high-current applications

where traditional MOSFETs are typically utilized in series-parallel strings to overcome their voltage, current and on-

state limitations. Replacement of such series-parallel strings, (and associated gate drive circuitry), results in a much

simpler system design, with improved reliability, a lower component count, and a lower system cost.

FEaTUREsHigh blocking voltage �High power density �High current handling capability �Low conduction losses �MOS gate turn on for drive simplicity �International standard and proprietary �IsOPlUsTm packages

aPPlICaTIOnsRadar transmitter power supplies �Radar pulse modulators �Capacitor discharge circuits �High voltage power supplies �AC switches �HV circuit breakers �Pulser circuits �High voltage test equipment �Laser & X-ray generators �

PartNumber

vCEs(max)

(v)

Ic @25 Tc=25°C

(a)

Ic @ 90Tc=90°C

(a)

Vce (sat)typ Tj=25°C

(v)

tf typTJ=25°C

(ns)

R(th)JCmax

(°C/W)Package

Type

IXBH2N250 2500 5 2 3.5 182 3.90 TO-247

IXBT2N250 2500 5 2 3.5 182 3.90 TO-268

IXBX25N250 2500 55 25 3.3 510 0.42 PLUS247

IXBK64N250 2500 75 64 3.0 170 0.17 TO-264

IXBX64N250 2500 75 64 3.0 170 0.17 PLUS247

IXBF12N300 3000 22 12 3.2 530 1.25 ISOPLUS i4-PAKTM

IXBF20N300 3000 27 15 3.2 395 1.13 ISOPLUS i4-PAKTM

IXBH12N300 3000 30 12 3.2 530 0.78 TO-247

IXBT12N300 3000 30 12 3.2 530 0.78 TO-268

IXBF32N300 3000 40 22 3.2 630 0.78 ISOPLUS i4-PAKTM

IXBH20N300 3000 50 20 3.2 395 0.50 TO-247

IXBT20N300 3000 50 20 3.2 395 0.50 TO-268

IXBH32N300 3000 80 32 3.2 630 0.31 TO-247

IXBT32N300 3000 80 32 3.2 630 0.31 TO-268

IXBK55N300 3000 130 55 3.2 268 0.20 TO-264

IXBX55N300 3000 130 55 3.2 268 0.20 PLUS247

IXBF55N300 3000 130 55 3.2 268 0.20 ISOPLUS i4-PAKTM

BiMOSFETsTm

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