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SWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply Applications
The MJE/MJF18008 have an applications specific stateoftheart
die designed for use in 220 V lineoperated Switchmode Power
supplies and electronic light ballasts. These high voltage/high speed
transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFEFast Switching
No Coil Required in Base Circuit for TurnOff (No Current Tail)
Tight Parametric Distributions are Consistent LottoLot
Two Package Choices: Standard TO220 or Isolated TO220
MJF18008, Case 221D, is UL Recognized at 3500 VRMS
: File
#E69369
MAXIMUM RATINGS
Rating
Symbol
MJE18008
MJF18008
Unit
CollectorEmitter Sustaining Voltage
VCEO
450
Vdc
CollectorEmitter Breakdown Voltage
VCES
1000
Vdc
EmitterBase Voltage
VEBO
9.0
Vdc
Collector Current Continuous
Peak(1)
ICICM
8.0
16
Adc
Base Current Continuous
Peak(1)
IBIBM
4.0
8.0
Adc
RMS Isolation Voltage(2)
Test No. 1 Per Fig. 22a(for 1 sec,] R.H. < 30%,
Test No. 1 Per Fig. 22b
TC = 25_C)
Test No. 1 Per Fig. 22c
VISOL
4500
3500
1500
Volts
Total Device Dissipation (TC = 25C)
Derate above 25_C
PD
125
1.0
45
0.36
Watts
W/_C
Operating and Storage Temperature
TJ, Tstg
65 to 150
_C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18008
MJF18008
Unit
Thermal Resistance Junction to Case
Junction to Ambient
RJCRJA
1.0
62.5
2.78
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8 from Case for 5 Seconds
TL
260
_C
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 41 Publication Order Number:
MJE18008/D
MJE18008
MJF18008
POWER TRANSISTOR8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
*ON Semiconductor Preferred Device
*
*
CASE 221A09TO220ABMJE18008
CASE 221D02ISOLATED TO220 TYPE
UL RECOGNIZEDMJF18008
STYLE 1:PIN 1 . B ASE
2. COLLECTOR3. EMITTER4. COLLECTOR
12
3
4
1
23
STYLE 2:P IN 1. BASE
2. COLLECTOR3 . EMITTE R
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125_C)
Collector Cutoff Current (VCE = 800 V, VEB = 0) (TC = 125_C)
ICES
100
500
100
Adc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
BaseEmitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
BaseEmitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
VBE(sat)
0.82
0.92
1.1
1.25
Vdc
CollectorEmitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
(TC = 125_C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125_C)
VCE(sat)
0.3
0.3
0.35
0.4
0.6
0.65
0.7
0.8
Vdc
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125_C)DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
6.0
5.011
11
10
28
9.0
8.015
16
20
34
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cyclev 10%. (continued)
(2) Proper strike and creepage distance must be provided.
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Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
13
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
100
150
pF
Input Capacitance (VEB = 8.0 V)
Cib
1750
2500
pF
Dynamic Saturation Voltage:
(IC = 2.0 Adc
1.0 s
(TC = 125C)
VCE(dsat)
5.5
11.5
Vdc
Determined 1.0 s and
3.0 s respectively after
rising IB1 reaches 90% of
IB1 = 200 mAdcVCC = 300 V)
3.0 s
(TC = 125C)
3.5
6.5
final IB1(see Figure 18)
(IC = 5.0 Adc
1.0 s
(TC = 125C)
11.5
14.5
IB1 = 1.0 Adc
VCC = 300 V)
3.0 s
(TC = 125C)
2.4
9.0
SWITCHING CHARACTERISTICS: Resistive Load (D.C.v 10%, Pulse Width = 20 s)
TurnOn Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc, VCC = 300 V)
(TC = 125C)
ton
200
190
300
ns
TurnOff Time
(TC = 125C)
toff
1.2
1.5
2.5
s
TurnOn Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,IB2 = 2.25 Adc, VCC = 300 V)
(TC = 125C)
ton
100250
180
ns
TurnOff Time
(TC = 125C)
toff
1.6
2.0
2.5
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)
Fall Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc)
(TC = 125C)
tfi
100
120
180
ns
Storage Time
(TC = 125C)
tsi
1.5
1.9
2.75
s
Crossover Time
(TC = 125C)
tc
250
230
350
ns
Fall Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc)
(TC = 125C)
tfi
85
135
150
ns
Storage Time
(TC = 125C)
tsi
2.0
2.6
3.2
s
Crossover Time
(TC = 125C)
tc
210
250
300
ns
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hFE,
DCCURR
ENTGAIN
IC, COLLECTOR CURRENT (AMPS)
TJ = 125C
C,
CAPACITANCE(pF)
0.01
100
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
hFE,
DCCURR
ENTGAIN
Figure 2. DC Current Gain @ 5 Volts
VCE,
VOLTAGE(VOLTS)
Figure 3. Collector Saturation Region Figure 4. CollectorEmitter Saturation Voltage
Figure 5. BaseEmitter Saturation Region Figure 6. Capacitance
10
11 10
100
10
10.01 0.1 1 10
2
0.01
IB, BASE CURRENT (AMPS)
10
1
0.010.01
IC COLLECTOR CURRENT (AMPS)
0.1
1.3
1
0.8
0.40.01
IC, COLLECTOR CURRENT (AMPS)
0.1 1 10
1000
100
1
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1 1000
1
0
0.1
1 10
10000
10
0.1
0.1 1 10
10
TJ = 25C
TJ = -20C
TJ = 125C
TJ = 25C
VCE,
VOLTAGE(VOLTS)
IC/IB = 10
IC/IB = 5
VBE,V
OLTAGE(VOLTS) 1.1
0.9
0.6
0.5
0.5
1.5
1.2
TJ = 25C
3 A 5 A 8 A 10 A
TJ = 25C
TJ = 125C
TJ = 25C
TJ = 125CIC/IB = 5
IC/IB = 10
TJ = -20C
IC = 1 A
0.7
Cob
100
Cib
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V VCE = 5 V
TJ = 25C
f = 1 MHz
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Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff
IC, COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0
1500
IC, COLLECTOR CURRENT (AMPS)
t,TIME(ns)
Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE)
Figure 11. Inductive Switching, tc and tfiIC/IB = 5
Figure 12. Inductive Switching, tc and tfiIC/IB = 10
1000
04 8
2000
0
3500
3
hFE, FORCED GAIN
6
400
50
0
IC, COLLECTOR CURRENT (AMPS)
4 8
250
200
50
2000
012 15
300
150
2
2 5 8
IC/IB = 5
tsi,STORAGETIME(ns)
200
150
100
6
500
IC/IB = 10
4 82 6
500
1000
1500
2500
3000
3500
t,TIME(ns)
t,TIME(ns)
1 3 4 6 7
1000
1500
2500
9
5000
2000
0
500
1000
1500
2500
3000
3500
1 2 3 5
t,TIM
E(ns)
4 7 81 2 3 5 6
t,TIM
E(ns)
1 3 5 7 1 3 5 7
500
3000
4 5 7 8 10 11 13 14
250
100
IC/IB = 10
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
4000
4500
300
350
IB(off) = IC/2
VCC = 300 V
PW = 20 s
IC/IB = 5
IC/IB = 10
TJ = 125C
TJ = 25C
4500
4000
IC/IB = 5
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
IC = 2 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
6 7
tfi
tc
tfi
tc
TJ = 25C
TJ = 125C
TYPICAL SWITCHING CHARACTERISTICS(IB2 = IC/2 for all switching)
IC = 4.5 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
IB(off) = IC/2
VCC = 300 V
PW = 20 s
TJ = 25C
TJ = 125C
TJ = 25C
TJ = 125C
TJ = 25C
TJ = 125C
TJ = 25C
TJ = 125C
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hFE, FORCED GAIN
TC,
CROSSOV
ERTIME(ns)
3
160
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
tfi,FALLTIM
E(ns)
Figure 14. Inductive Crossover Time
605 15
400
200
50
4 6 7 8 9 10 11 12 13 14
70
80
140
3 5 154 6 7 8 9 10 11 12 13 14
300
100
IC = 2 A
IC = 4.5 A
TJ = 25C
TJ = 125C
100
120
350IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
150
130
110
90150
250
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
IC = 2 A
IC = 4.5 A
TYPICAL SWITCHING CHARACTERISTICS(IB2 = IC/2 for all switching)
TJ = 25C
TJ = 125C
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IC,
COLLECTORCURRENT(AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC,
COLLECTORCURRENT(AMPS)
Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe
Operating Area
Figure 17. Forward Bias Power Derating
100
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
9
6
00 200
1,0
0,8
0,2
0,020
TC, CASE TEMPERATURE (C)
80 140 160
1
0.01
3
600 1000100 1000
DC (MJE18008)
5 ms
POWERDERATINGFACTOR
0,6
0,4
10
0.1
EXTENDED
SOA
1 ms 10 s 1 s
400
2
1
4
5
40 60 100 120
SECOND BREAKDOWN
DERATING
DC (MJF18008)
7
8
There are two limitations on the power handling ability of
a transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation; i.e.,
the transistor must not be subjected to greater dissipation than
the curves indicate. The data of Figure 15 is based on TC =
25C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25C. Second breakdown limita-
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at any
case temperature by using the appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figure 20 and 21. Atany case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high volt-
age and current must be sustained simultaneously during turn
off with the basetoemitter junction reversebiased. The safe
level is specified as a reversebiased safe operating area (Fig-
ure 16). This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
800
-1, 5 V
-5 V
TC 125C
IC/IB 4
LC = 500 H
GUARANTEED SAFE OPERATING AREA INFORMATION
THERMAL DERATING
VBE(off) = 0 V
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-5
-4
-3
-2
-1
0
1
2
3
4
5
0 1 2 3 4 5 6 7 8
Figure 18. Dynamic Saturation Voltage Measurements
TIME
VCE
VOLTS
IB
Figure 19. Inductive Switching Measurements
1 s
3 s
90% IB
dyn 1 s
dyn 3 s
10
9
8
7
6
5
4
3
2
1
00 1 2 3 4 5 6 7 8
TIME
IB
IC
tsi
VCLAMP 10% VCLAMP
90% IB1
10% ICtc
90% ICtfi
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 F150
3 W
100
3 W
MPF930
+10 V
50
COMMON
-Voff
500 F
MPF930
MTP8P10
MUR105
MJE210
MTP12N10
MTP8P10
150
3 W
100 F
Iout
A
1 F
IC PEAK
VCE PEAK
VCE
IB
IB1
IB2
V(BR)CEO(sus)
L = 10mH
RB2 =
VCC = 20 VOLTS
IC(pk) = 100 mA
INDUCTIVE SWITCHING
L = 200 H
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 H
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
RB2
RB1
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0.01
t, TIME (ms)
Figure 20. Typical Thermal Response (ZJC(t)) for MJE18008
r(t),
TRANSIENTTHERMA
LRESISTANCE
(NORMALIZE
D)
RJC(t) = r(t) RJCRJC = 1.0C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1TJ(pk) - TC = P(pk) RJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
0.2
0.02
0.1
D = 0.5
SINGLE PULSE
0.01 0.1 1 10 100 1000
0.1
1
0.01
Figure 21. Typical Thermal Response (ZJC(t)) for MJF18008
r(t),
TRANSIENTTHERMALRESISTANCE
(NORMALIZED)
RJC(t) = r(t) RJCRJC = 2.78C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1TJ(pk) - TC = P(pk) RJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
0.2
0.02
0.1
SINGLE PULSE
0.01 0.1 1 10 100 100000
0.1
1
1000 10000
0.05
0.05
D = 0.5
TYPICAL THERMAL RESPONSE
t, TIME (ms)
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MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.110MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1
*Measurement made between leads and heatsink with all leads shorted together
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
CLIP 0.107MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.107MIN
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
TEST CONDITIONS FOR ISOLATION TESTS*
4-40 SCREW
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
CLIP
HEATSINK
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting
technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compres-
sion washer helps to maintain a constant pressure on the package over time and during large temperature excursions.Destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess
of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely
affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semi-
conductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
Figure 23. Typical Mounting Techniques
for Isolated Package
Figure 23a. ScrewMounted Figure 23b. ClipMounted
MOUNTING INFORMATION**
**For more information about mounting power semiconductors see Application Note AN1040.
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PACKAGE DIMENSIONS
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.
STYLE 2:PIN 1 . BASE
2. COLLECTOR3. EMITTER
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.621 0.629 15.78 15.97
INCHES
B 0.394 0.402 10.01 10.21C 0.181 0.189 4.60 4.80D 0.026 0.034 0.67 0.86F 0.121 0.129 3.08 3.27G 0.100 BSC 2.54 BSC
H 0.123 0.129 3.13 3.27J 0.018 0.025 0.46 0.64K 0.500 0.562 12.70 14.27L 0.045 0.060 1.14 1.52N 0.200 BSC 5.08 BSCQ 0.126 0.134 3.21 3.40R 0.107 0.111 2.72 2.81S 0.096 0.104 2.44 2.64U 0.259 0.267 6.58 6.78
B
Y
GN
D
L
K
H
A
F
Q
3 PL
1 2 3
MBM0.25 (0.010) Y
SEATINGPLANE
T
U
C
S
J
R
CASE 221D02(ISOLATED TO220 TYPE)
UL RECOGNIZED: FILE #E69369ISSUE D
CASE 221A09ISSUE AA
TO220AB
NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES AREALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28C 0.160 0.190 4.07 4.82D 0.025 0.035 0.64 0.88F 0.142 0.147 3.61 3.73G 0.095 0.105 2.42 2.66H 0.110 0.155 2.80 3.93J 0.018 0.025 0.46 0.64K 0.500 0.562 12.70 14.27L 0.045 0.060 1.15 1.52N 0.190 0.210 4.83 5.33Q 0.100 0.120 2.54 3.04R 0.080 0.110 2.04 2.79S 0.045 0.055 1.15 1.39T 0.235 0.255 5.97 6.47U 0.000 0.050 0.00 1.27V 0.045 --- 1.15 ---Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANET
C
ST
U
R
J
STYLE 1:PIN 1 . BASE
2. COLLECTOR3. EMITTER4. COLLECTOR
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