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Parameter Max. UnitsID @ T C = 25C Continuous Drain Current, V GS @ 10V 209ID @ T C = 100C Continuous Drain Current, V GS @ 10V 148 AIDM Pulsed Drain Current 840P D @T C = 25C Power Dissipation 470 W
Linear Derating Factor 3.1 W/CVGS Gate-to-Source Voltage 20 VEAS Single Pulse Avalanche Energy 1970 mJIAR Avalanche Current See Fig.12a, 12b, 15, 16 AEAR Repetitive Avalanche Energy mJdv/dt Peak Diode Recovery dv/dt 5.0 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )C
Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)
IRFP2907HEXFET Power MOSFET
Specifically designed for Automotive applications, thisStripe Planar design of HEXFET Power MOSFETsutilizes the lastest processing techniques to achieveextremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFETare a 175C junction operating temperature, fastswitching speed and improved repetitive avalancherating. These benefits combine to make this design anextremely efficient and reliable device for use inAutomotive applications and a wide variety of otherapplications.
S
D
G
Absolute Maximum Ratings
Parameter Typ. Max. UnitsR JC Junction-to-Case 0.32R CS Case-to-Sink, Flat, Greased Surface 0.24 C/WR JA Junction-to-Ambient 40
Thermal Resistance
VDSS = 75V
RDS(on) = 4.5m
ID = 209A
Description
08/08/11
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TO-247AC
l Advanced Process Technologyl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to Tjmax
Benefits
Typical Applicationsl Integrated Starter Alternatorl 42 Volts Automotive Electrical Systems
AUTOMOTIVE MOSFET
SD
G
D
G D SGate Drain Source
PD -93906D
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Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 75 V V GS = 0V, I D = 250 A V(BR)DSS / TJ Breakdown Voltage Temp. Coefficient 0.085 V/C Reference to 25C, I D = 1mARDS(on) Static Drain-to-Source On-Resistance 3.6 4.5 m VGS = 10V, I D = 125AVGS(th) Gate Threshold Voltage 2.0 4.0 V V DS = 10V, I D = 250 Ag fs Forward Transconductance 130 S V DS = 25V, I D = 125A
20 A
VDS = 75V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J = 150C
Gate-to-Source Forward Leakage 200 V GS = 20VGate-to-Source Reverse Leakage -200
nAVGS = -20V
Qg Total Gate Charge 410 620 I D = 125AQgs Gate-to-Source Charge 92 140 nC V DS = 60V
Qgd Gate-to-Drain ("Miller") Charge 140 210 V GS = 10Vtd(on) Turn-On Delay Time 23 V DD = 38Vtr Rise Time 190 I D = 125Atd(off) Turn-Off Delay Time 130 R G = 1.2
tf Fall Time 130 V GS = 10VBetween lead,
6mm (0.25in.)from packageand center of die contact
C iss Input Capacitance 13000 V GS = 0VCoss Output Capacitance 2100 pF V DS = 25VC rss Reverse Transfer Capacitance 500 = 1.0MHz, See Fig. 5Coss Output Capacitance 9780 V GS = 0V, V DS = 1.0V, = 1.0MHzC
ossOutput Capacitance 1360 V
GS= 0V, V
DS= 60V, = 1.0MHz
Coss eff. Effective Output Capacitance 2320 V GS = 0V, V DS = 0V to 60V
nH
Electrical Characteristics @ T J = 25C (unless otherwise specified)
LD Internal Drain Inductance
LS Internal Source Inductance S
D
G
IGSS
ns
5.0
13
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited bymax. junction temperature. (See fig. 11).Starting T J = 25C, L = 0.25mHRG = 25 , IAS = 125A. (See Figure 12).ISD 125A, di/dt 260A/ s, V DD V(BR)DSS ,TJ 175CPulse width 400 s; duty cycle 2%.
Notes:
S
D
G
Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol
(Body Diode)
showing theISM Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.VSD Diode Forward Voltage 1.3 V T J = 25C, I S = 125A, V GS = 0Vtrr Reverse Recovery Time 140 210 ns T J = 25C, I F = 125AQ rr Reverse RecoveryCharge 880 1320 nC di/dt = 100A/ s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Source-Drain Ratings and Characteristics
209
840
A
Coss eff. is a fixed capacitance that gives the same charging timeas C oss while V DS is rising from 0 to 80% V DSS .
Calculated continuous current based on maximum allowablejunction temperature. Package limitation current is 90A.Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitiveavalanche performance.
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Fig 4. Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20 s PULSE WIDTHT = 25 CJ
TOP
BOTTOM
VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V
V , Drain-to-Source Voltage (V)
I
, D r a
i n - t o - S o u r c e
C u r r e n
t ( A )
DS
D
4.5V
10
100
1000
0.1 1 10 100
20 s PULSE WIDTHT = 175 CJ
TOP
BOTTOM
VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V
V , Drain-to-Source Voltage (V)
I
, D r a
i n - t o - S o u r c e
C u r r e n
t ( A )
DS
D
4.5V
1
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 25V20 s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I ,
D r a
i n - t o - S o u r c e
C u r r e n
t ( A )
GS
D
T = 25 CJ
T = 175 CJ
-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R
, D r a
i n - t o - S o u r c e
O n
R e s i s t a n c e
( N o r m a
l i z e
d )
J
D S ( o n
)
V =
I =
GS
D
10V
209A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage
0 100 200 300 400 500 600 7000
4
8
12
16
20
Q , Total Gate Charge (nC)
V
, G a
t e - t o - S o u r c e
V o
l t a g e
( V )
G
G
S
FOR TEST CIRCUITSEE FIGURE
I =D
13
125A
V = 37VDSV = 60VDS
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0V ,Source-to-Drain Voltage (V)
I
, R e v e r s e
D r a
i n C u r r e n
t ( A )
SD
S D
V = 0 VGS
T = 25 CJ
T = 175 CJ
1 10 100
VDS , Drain-to-Source Voltage (V)
0
4000
8000
12000
16000
20000
C ,
C a p a c
i t a n c e
( p F )
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZCiss = Cgs + Cgd , Cds SHORTED
Crss = CgdCoss = Cds + Cgd
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I D ,
D r a
i n - t o - S o u r c e
C u r r e n
t ( A )
OPERATION IN THIS AREA LIMITEDBY RDS(on)
Tc = 25CTj = 175CSingle Pulse
100 sec
1msec
10msec
DC
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.Case Temperature
25 50 75 100 125 150 1750
40
80
120
160
200
240
T , Case Temperature ( C)
I ,
D r a
i n C u r r e n
t ( A )
C
D
LIMITED BY PACKAGE
VDS90%
10%VGS
td(on) tr td(off) tf
VDS
Pulse Width 1 sDuty Factor 0.1 %
RD
VGS
R GD.U.T.
10V
+
-VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T h e r m a l
R e s p o n s e
( Z t h J C
) C / W
0.200.10
D = 0.50
0.020.01
0.05
SINGLE PULSE( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
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25 50 75 100 125 150 1750
1000
2000
3000
4000
5000
Starting T , Junction Temperature ( C)
E
, S i n g
l e P u
l s e
A v a
l a n c h e
E n e r g y
( m J )
J
A S
IDTOP
BOTTOM
51A88A
125A
QG
QGS QGD
VG
Charge
D.U.T.VDS
IDIG
3mA
VGS
.3 F
50K
.2 F12V
Current RegulatorSame Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche EnergyVs. Drain CurrentFig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
R G
IAS
0.01 t p
D.U.T
LVDS
+- VDD
DRIVER
A
15V
20V
Fig 14. Threshold Voltage Vs. Temperature
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V G S ( t h ) ,
V a r i a c e
( V )
ID = 250 A
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Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche EnergyVs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at atemperature far in excess of T jmax . This is validated forevery part type.
2. Safe operation in Avalanche is allowed as long asT jmax isnot exceeded.
3. Equation below based on circuit and waveforms shown inFigures 12a, 12b.
4. P D (ave) = Average power dissipation per singleavalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts forvoltage increase during avalanche).
6. I av = Allowable avalanche current.7. T = Allowable rise in junction temperature, not to exceed
T jmax (assumed as 25C in Figure 15, 16).tav = Average time in avalanche.D = Duty cycle in avalanche = t av fZthJC (D, t av ) = Transient thermal resistance, see figure 11)
P D (ave) = 1/2 ( 1.3BVI av ) = D T/ Z thJCIav = 2D T/ [1.3BVZ th]EAS (AR) = P D (ave) t av
25 50 75 100 125 150 175
Starting T J , Junction Temperature (C)
0
400
800
1200
1600
2000
E A R ,
A v a
l a n c
h e
E n e r g y
( m J )
TOP Single PulseBOTTOM 10% Duty CycleID = 125A
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
A v a
l a n c
h e
C u r r e n
t ( A )
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vsavalanche pulsewidth, tavassuming Tj = 25C due toavalanche losses
0.01
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Peak Diode Recovery dv/dt Test Circuit
P.W.Period
di/dt
Diode Recoverydv/dt
Ripple 5%
Body Diode Forward DropRe-AppliedVoltage
ReverseRecoveryCurrent
Body Diode ForwardCurrent
VGS =10V
VDD
ISD
Driver Gate Drive
D.U.T. I SD Waveform
D.U.T. V DS Waveform
Inductor Curent
D = P.W.Period
+
-
+
+
+-
-
-
RGVDD
dv/dt controlled by R G ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
D.U.T *Circuit Layout Considerations
Low Stray Inductance Ground Plane Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
***VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 17. For N-channel HEXFET power MOSFETs
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IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 08/2011
Data and specifications subject to change without notice.This product has been designed and qualified for the Automotive[Q101] market.
Qualification Standards can be found on IRs Web site.
TO-247AC Part Marking Information
TO-247AC Package OutlineDimensions are shown in millimeters (inches)
LINE H
INTERNATIONAL
LOGORECTIFIER
ASSEMBLY
56 57
IRFPE30135H
YEAR 1 = 2001DATE CODE
PART NUMBER
indicates "L ead-Free" WEEK 35LOT CODE
IN THE ASSE MBL Y LINE "H"ASSEMBL ED ON WW 35, 2001
Note: "P" in assembly line posi tion
EXAMPLE:WITH ASS EMBLYTHIS IS AN IRFPE30
LOT CODE 5657
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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