International Rectifier IRFP2907

8/6/2019 International Rectifier IRFP2907

1/9

Parameter Max. UnitsID @ T C = 25C Continuous Drain Current, V GS @ 10V 209ID @ T C = 100C Continuous Drain Current, V GS @ 10V 148 AIDM Pulsed Drain Current 840P D @T C = 25C Power Dissipation 470 W

Linear Derating Factor 3.1 W/CVGS Gate-to-Source Voltage 20 VEAS Single Pulse Avalanche Energy 1970 mJIAR Avalanche Current See Fig.12a, 12b, 15, 16 AEAR Repetitive Avalanche Energy mJdv/dt Peak Diode Recovery dv/dt 5.0 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )C

Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)

IRFP2907HEXFET Power MOSFET

Specifically designed for Automotive applications, thisStripe Planar design of HEXFET Power MOSFETsutilizes the lastest processing techniques to achieveextremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFETare a 175C junction operating temperature, fastswitching speed and improved repetitive avalancherating. These benefits combine to make this design anextremely efficient and reliable device for use inAutomotive applications and a wide variety of otherapplications.

S

D

G

Absolute Maximum Ratings

Parameter Typ. Max. UnitsR JC Junction-to-Case 0.32R CS Case-to-Sink, Flat, Greased Surface 0.24 C/WR JA Junction-to-Ambient 40

Thermal Resistance

VDSS = 75V

RDS(on) = 4.5m

ID = 209A

Description

08/08/11

www.irf.com 1

TO-247AC

l Advanced Process Technologyl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to Tjmax

Benefits

Typical Applicationsl Integrated Starter Alternatorl 42 Volts Automotive Electrical Systems

AUTOMOTIVE MOSFET

SD

G

D

G D SGate Drain Source

PD -93906D


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Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 75 V V GS = 0V, I D = 250 A V(BR)DSS / TJ Breakdown Voltage Temp. Coefficient 0.085 V/C Reference to 25C, I D = 1mARDS(on) Static Drain-to-Source On-Resistance 3.6 4.5 m VGS = 10V, I D = 125AVGS(th) Gate Threshold Voltage 2.0 4.0 V V DS = 10V, I D = 250 Ag fs Forward Transconductance 130 S V DS = 25V, I D = 125A

20 A

VDS = 75V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J = 150C

Gate-to-Source Forward Leakage 200 V GS = 20VGate-to-Source Reverse Leakage -200

nAVGS = -20V

Qg Total Gate Charge 410 620 I D = 125AQgs Gate-to-Source Charge 92 140 nC V DS = 60V

Qgd Gate-to-Drain ("Miller") Charge 140 210 V GS = 10Vtd(on) Turn-On Delay Time 23 V DD = 38Vtr Rise Time 190 I D = 125Atd(off) Turn-Off Delay Time 130 R G = 1.2

tf Fall Time 130 V GS = 10VBetween lead,

6mm (0.25in.)from packageand center of die contact

C iss Input Capacitance 13000 V GS = 0VCoss Output Capacitance 2100 pF V DS = 25VC rss Reverse Transfer Capacitance 500 = 1.0MHz, See Fig. 5Coss Output Capacitance 9780 V GS = 0V, V DS = 1.0V, = 1.0MHzC

ossOutput Capacitance 1360 V

GS= 0V, V

DS= 60V, = 1.0MHz

Coss eff. Effective Output Capacitance 2320 V GS = 0V, V DS = 0V to 60V

nH

Electrical Characteristics @ T J = 25C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance S

D

G

IGSS

ns

5.0

13

IDSS Drain-to-Source Leakage Current

Repetitive rating; pulse width limited bymax. junction temperature. (See fig. 11).Starting T J = 25C, L = 0.25mHRG = 25 , IAS = 125A. (See Figure 12).ISD 125A, di/dt 260A/ s, V DD V(BR)DSS ,TJ 175CPulse width 400 s; duty cycle 2%.

Notes:

S

D

G

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode)

showing theISM Pulsed Source Current integral reverse

(Body Diode)

p-n junction diode.VSD Diode Forward Voltage 1.3 V T J = 25C, I S = 125A, V GS = 0Vtrr Reverse Recovery Time 140 210 ns T J = 25C, I F = 125AQ rr Reverse RecoveryCharge 880 1320 nC di/dt = 100A/ s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)

Source-Drain Ratings and Characteristics

209

840

A

Coss eff. is a fixed capacitance that gives the same charging timeas C oss while V DS is rising from 0 to 80% V DSS .

Calculated continuous current based on maximum allowablejunction temperature. Package limitation current is 90A.Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitiveavalanche performance.


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Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

20 s PULSE WIDTHT = 25 CJ

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)

I

, D r a

i n - t o - S o u r c e

C u r r e n

t ( A )

DS

D

4.5V

10

100

1000

0.1 1 10 100

20 s PULSE WIDTHT = 175 CJ

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)

I

, D r a


C u r r e n

t ( A )

DS

D

4.5V

1

10

100

1000

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V = 25V20 s PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I ,

D r a


C u r r e n

t ( A )

GS

D

T = 25 CJ

T = 175 CJ

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R

, D r a


O n

R e s i s t a n c e

( N o r m a

l i z e

d )

J

D S ( o n

)

V =

I =

GS

D

10V

209A


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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

0 100 200 300 400 500 600 7000

4

8

12

16

20

Q , Total Gate Charge (nC)

V

, G a

t e - t o - S o u r c e

V o

l t a g e

( V )

G

G

S

FOR TEST CIRCUITSEE FIGURE

I =D

13

125A

V = 37VDSV = 60VDS

0.1

1

10

100

1000

0.0 0.5 1.0 1.5 2.0 2.5 3.0V ,Source-to-Drain Voltage (V)

I

, R e v e r s e

D r a

i n C u r r e n

t ( A )

SD

S D

V = 0 VGS

T = 25 CJ

T = 175 CJ

1 10 100

VDS , Drain-to-Source Voltage (V)

0

4000

8000

12000

16000

20000

C ,

C a p a c

i t a n c e

( p F )

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd , Cds SHORTED

Crss = CgdCoss = Cds + Cgd

0.1 1 10 100 1000

VDS , Drain-to-Source Voltage (V)

0.1

1

10

100

1000

10000

I D ,

D r a


C u r r e n

t ( A )

OPERATION IN THIS AREA LIMITEDBY RDS(on)

Tc = 25CTj = 175CSingle Pulse

100 sec

1msec

10msec

DC


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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

25 50 75 100 125 150 1750

40

80

120

160

200

240

T , Case Temperature ( C)

I ,

D r a

i n C u r r e n

t ( A )

C

D

LIMITED BY PACKAGE

VDS90%

10%VGS

td(on) tr td(off) tf

VDS

Pulse Width 1 sDuty Factor 0.1 %

RD

VGS

R GD.U.T.

10V

+

-VDD

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

T h e r m a l

R e s p o n s e

( Z t h J C

) C / W

0.200.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc


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25 50 75 100 125 150 1750

1000

2000

3000

4000

5000

Starting T , Junction Temperature ( C)

E

, S i n g

l e P u

l s e

A v a

l a n c h e

E n e r g y

( m J )

J

A S

IDTOP

BOTTOM

51A88A

125A

QG

QGS QGD

VG

Charge

D.U.T.VDS

IDIG

3mA

VGS

.3 F

50K

.2 F12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain CurrentFig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

R G

IAS

0.01 t p

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20V

Fig 14. Threshold Voltage Vs. Temperature

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V G S ( t h ) ,

V a r i a c e

( V )

ID = 250 A


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Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche EnergyVs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at atemperature far in excess of T jmax . This is validated forevery part type.

2. Safe operation in Avalanche is allowed as long asT jmax isnot exceeded.

3. Equation below based on circuit and waveforms shown inFigures 12a, 12b.

4. P D (ave) = Average power dissipation per singleavalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts forvoltage increase during avalanche).

6. I av = Allowable avalanche current.7. T = Allowable rise in junction temperature, not to exceed

T jmax (assumed as 25C in Figure 15, 16).tav = Average time in avalanche.D = Duty cycle in avalanche = t av fZthJC (D, t av ) = Transient thermal resistance, see figure 11)

P D (ave) = 1/2 ( 1.3BVI av ) = D T/ Z thJCIav = 2D T/ [1.3BVZ th]EAS (AR) = P D (ave) t av

25 50 75 100 125 150 175

Starting T J , Junction Temperature (C)

0

400

800

1200

1600

2000

E A R ,

A v a

l a n c

h e

E n e r g y

( m J )

TOP Single PulseBOTTOM 10% Duty CycleID = 125A

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

1

10

100

1000

A v a

l a n c

h e

C u r r e n

t ( A )

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vsavalanche pulsewidth, tavassuming Tj = 25C due toavalanche losses

0.01


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Peak Diode Recovery dv/dt Test Circuit

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS =10V

VDD

ISD

Driver Gate Drive

D.U.T. I SD Waveform

D.U.T. V DS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

RGVDD

dv/dt controlled by R G ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

D.U.T *Circuit Layout Considerations

Low Stray Inductance Ground Plane Low Leakage Inductance

Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

[ ]

***VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 17. For N-channel HEXFET power MOSFETs


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IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information . 08/2011

Data and specifications subject to change without notice.This product has been designed and qualified for the Automotive[Q101] market.

Qualification Standards can be found on IRs Web site.

TO-247AC Part Marking Information

TO-247AC Package OutlineDimensions are shown in millimeters (inches)

LINE H

INTERNATIONAL

LOGORECTIFIER

ASSEMBLY

56 57

IRFPE30135H

YEAR 1 = 2001DATE CODE

PART NUMBER

indicates "L ead-Free" WEEK 35LOT CODE

IN THE ASSE MBL Y LINE "H"ASSEMBL ED ON WW 35, 2001

Note: "P" in assembly line posi tion

EXAMPLE:WITH ASS EMBLYTHIS IS AN IRFPE30

LOT CODE 5657

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

International Rectifier IRFP2907

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