Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-1
Steffen BernetBerlin University of Technology
Power Electronics LabBerlin, Germany
Function, Technology and Features of IGCTs and High Voltage IGBTs
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-2
Outline1. Introduction
2. Structure, Function and Characteristics of IGBTs
3. Structure, Function and Characteristics of IGCTs
4. Latest IGCT Technology Developments
IGCT Series Connection
10kV IGCTs
5. Conclusions
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-3
Power Semiconductors
Press-PackPress-Pack
1836
4500V; 4000A 6000V; 6000A
MITSUBISHI
Press-PackPress-Pack
15.7512.65
4500V; 3500A5500V; 2300A
ABBIGCTIPM6.754500V; 1500AABB
Press-Pack3.963300V; 1200ATOSHIBAModule3.963300V; 1200A HITACHI
Module3.963300V; 1200A4500V
MITSUBISHI
ModuleModule
3.963.6
3300V; 1200A, 6500V; 600A
EUPECIGBTPress-Pack184500V; 4000A ABBPress-Pack366000V; 6000A HITACHIPress-Pack366000V; 6000A MITSUBISHIGTO
CaseSwitchPower(MVA)
RatingsCompanyPower Semiconductor
Power Semiconductors for MV Converters
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-5
Advantages:1. High on-state current density2. High blocking voltage and switch power3. High off-state dv/dt withstand capability4. Integration of inverse diode on the same
silicon wafer5. Small part count in the reliable press-
pack case
Characteristics of Conventional GTOs
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-6
Udc
Turn-off Waveforms of GTOs
Characteristics
Typical Turn-off Gain:IT/IRG = 3 5
dv/dt = (500-1000) V/s
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-7
Gate
Unit
20 V
ShrinkingPlasma
Turn- off Behaviour of GTOs
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-8
Disadvantages:1. Inhomogeneous turn-off transient2. Limitation of dv/dt to about 500-
1000V/s3. Bulky and expensive snubber circuits4. Complex gate drive5. High gate drive power
Characteristics of Conventional GTOs
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-9
Structure of a NPT - IGBT Chip
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-10
Conduction State of a NPT - IGBT
B A
p+
BA Gate Emitter
SiO2
p+
Al
n+
p-
Emitter
p+
n-p+n-
-
-
-
-
-
--
--
--
--
-Collector
p-d
+
+
+
+
+
+
+
+
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+
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+
++
+
+
+
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+
+
+
2 3 1 1 3 2
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-11
Silicon Chip 220 mSolder 80 m
Chip 1 Chip n. . . Aluminium oxide - Isolation 380 mUpper & lower copper layer 300 mSolder 80 mBaseplate(Copper) 3 mmThermal compound 50 mHeatsink
Structure of an IGBT Module
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-12
Hard Turn on Transient of an IGBT Module
(FZ1200R33KF1 (3300V; 1200A), Vdc=2250V, Io=1050A, Tj=25C)
-2 0 2 4 6 8 10 12 14 s 18
2.5
2.0
1.5
1.0
0.5
0
2.0
kA
1.0
0
VCE[kV]
IC[kA]
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-13
Hard Turn off Transient of an IGBT Module
(FZ1200R33KF1 (3300V; 1200A), Vdc=2250V, Io=1050A, Tj=25C)
-2 0 2 4 6 8 10 12 14 s 18
1.2
0.8
0.4
0
3.0
2.0
1.0
0
IC[kA]
VCE[kV]
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-14
Protection: Limitation of short circuit current by
IGBT (e.g. VGE=15V; IC=3*Ir ) Turn off transient within 10s Short Circuit Safe Operating Area:
Vdcmax=2500V; ICmax=3.5*Ir Failure: Heavy destruction of IGBT by
overcurrent Mostly open circuit after destruction
Characteristics of High Power IGBT Modules
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-15
Reliability: Aluminum wires and bonds are critical
parts at power cycling tests Increase of thermal resistance by
migration of thermal contact grease and inhomogeneous thermal contacts
Characteristics of High Power IGBT Modules
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-16
Very low gate drivepower (e.g. 3-5 W)
Control of dv/dt and di/dt
Active overvoltageprotection activeclamping (e.g. forseries connection)
Active short circuitprotection
Characteristics of IGBT Gate Units
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-17
Advantages1. Full insulation of base plate (simple cooling)2. Simple mounting3. Low cost plastic package
Disadvantages1. Undefined failure mode (mostly open terminals)2. Possibility of explosion3. Poor power cycling capability4. Single sided cooling
Characteristics of IGBT Modules
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-18
Physical Arrangement of an IGBT Press Pack
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-19
Advantages1. Short circuit in failure mode enables redundant
converter design (e.g. (n+1), (n+2))2. No explosion3. Double sided cooling
Disadvantages1. No insulation of heat sink2. Higher packaging costs
Characteristics of IGBT Press Packs
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-20
Physical Arrangement of IGCTs
91mm 4.5kV IGCT for water cooling51 mm 4.5kV IGCT for air cooling
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-21
Electric Field and Doping Level of 4,5 kV PT- und NPT-GTOs
0.0E+0
2.0E+4
4.0E+4
6.0E+4
8.0E+4
1.0E+5
1.2E+5
1.4E+5
12
13
14
15
16
17
18
19
20
0.0 100.0 200.0 300.0 400.0 500.0 600.0 700.0
n+ p+p n-
n+ p+p nn-
distance from cathode [m]
E(PT)
E(NPT)
NPT:
VAC = 5000 V
PT:
Log doping concentration [cm-3]
E
l
e
c
t
r
i
c
f
i
e
l
d
[
V
/
c
m
]
UAC = 5000 V
Comparison of PT and NPT Structure
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-22
IGCT Turn-off Waveforms
4
1
Ia (kA)Vdm
Tj = 90C
Itgq
4
3
2
1
0
-10
-20
Vg (V)
2
3
0
anode - voltage Vd
anode - current Ia
gate voltage Vg
thyristor transistorx
Vd (kV)
2015 3025 35 t!!m!s)
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-23
Protection: Active turn-off transient for Ishort (t)
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-24
Storage time: ts-IGCT=1/15*ts-GTO Despite of increase of Igqrm:
Qg-IGCT=0.4*Qg-GTO Transparent anode : On-state gate
current of IGCT is reduced by 50% IGCT gate drive power is reduced by
50% Uncritical minimum switching times do
not require control on IGCT gate drive
Characteristics of an IGCT- Gate Drive in Comparison to a GTO Gate Drive
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-25
Reliability: Low part count and press-pack case
enable high reliability Qualification tests and field eperience:
FIT(Failure in one billionhours)
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-26
Turn-off Transient of an IGCT Inverse Diode
-1500
-750
0
750
1500
2250
A
-4
-2
0
2
4
6
kV
0 5 10 15 20
s
(4500V; 1560A - RCIGCT; VDC=2800V, IF=1300A; VDM=4335A;
di/dt=400A/s)
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-27
Motivation of Research- General Development Trend
Increasing importance of PWM-VSIs- Replacement of Cycloconverter and LCI- Increasing use in energy systems (e.g. Windparks, HVDC,
STATCOMs, Active Filters, High Power UPS) Increase of converter voltage and power
- Converter voltage of Vout,RMS = 6 kV 10 kV - Series Connection of IGCTs
(e.g. n=3 devices per switch position in 3L-NPC VSI)- Increase of device voltage at useful silicon utilization
(e.g. 10kV IGCT / diode: Vout,RMS =6 kV 7.2 kV in 3L-NPC VSI)
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-28
Voltage definitions
VDRM
VDC NOM(continuous @ TJmax)
VDC MAX( 15 seconds @ TJmax)
100 s
10 ms
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-29
Device Voltage Ratings in 3-Level Inverter (N =1)
Nominal RMS Line Voltage
Nominal DC Half- Link Voltage
15% Vll,, 100 FIT and long-term DC
stability
Maximum DC Half Link Voltage
33% Vll, , SOA and short-term
DC stability
Maximum Repetitive
Blocking Voltage
VRMS (kV) VDC NOM (kV) VDCMAX (kV) VDRM (kV) 2.3 1.9 2.2 3.3 3.3 2.7 3.1 4.5
4.16 3.4 3.9 5.5 6 4.9 5.6 8
6.6 5.4 6.2 9 6.9 5.6 6.5 9.5 7.2 5.9 6.8 10
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-30
Number N of Series Connected Devices in 3L NPC VSI
Nominal RMS Line Voltage
N of 4.5 kV IGCTs / Diodes
N of 5.5 kV IGCTs / Diodes
N of 10 kV IGCTs / Diodes
VRMS (kV) 2.3 1 - - 3.3 1 - -
4.16 - 1 - 6 2 - 1
6.6 3 2 1 6.9 3 2 1 7.2 3 2 1
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-31
IGCT - Series ConnectionReasons for Voltage Unbalance of Series Connected DevicesStatic Deviating leakage currents
Dynamic Delay between Gate Signals Deviating switching behavior (e.g.)
Different tail or reverse recovery charges Different switching times (dv/dts, di/dts)
Consider The IGCT has a latching thyristor structure ! Control of dv/dt or clamping of switch voltage by gate control in active region is not possible in contrast to the IGBT or MOSFET ! External balancing 2-Pole required !
Bal.
2-Pole
Bal. 2-Pole
Bal. 2-Pole
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-32
Balancing Circuit
Dynamic voltage balancing: RC-Snubber Static voltage balancing: balancing resistor
RpRSnub
CSnub
Design Tradeoffs: low losses CSnub good balancing CSnub , selected IGCTs
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-33
Design Criteria
avoid Vmax > 4.5kV (immediate device destruction)
t
VGCT
switching transients
average blocking voltage lower than 2.8kV (FIT)
4.5kV
2.8kV
Values given for 4.5kV IGCTs
Blockingms
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-34
snubberresistor
snubbercapacitor
currentsensor
IGCT - Series Connection (RC - Snubber)Test Setup Buck Converter
VDC=6 kV, Iout=4 kA n=2
91mm 4.5kV IGCTs 68mm 4.5kV diodes
Snubber Rsnub=1 Csnub= 500 nF Rp=25 k
Rp
Rsnub
Csnub
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-35
0
1
2
3
100 101 102 103 104 105
IGCT 1IGCT 2
current
voltage
time (s)
I
G
C
T
v
o
l
t
a
g
e
,
I
G
C
T
c
u
r
r
e
n
t
(
k
V
,
k
A
)
VDC=4.6kV; Iout=2kA; n=2; Tj=115C; Csnub=500nF; Rsnub=1
IGCT Series Connection - Turn-off Transient
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-36
1.6
0
2
4
6
8
10
with snubbersnubberless 8.5
6.4
9.28
Etotal
0.630
0.650
0.5
8
Eon,SnubberEoff,SnubberEon, IGCTEoff, IGCT
L
o
s
s
e
s
(
J
)
LossesVDC = 4.5 kV, Iout = 2 kA
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-37
Technical Data Phase Leg / 3~ Inverter
Parameter Value / Typenominal dc input voltage VDC = 13.2 kV (10%)rms output current Iout = 1.5 kAnominal peak output current Iout, peak = 2.5 kAoutput power Sout = 8 MVA / 24 MVAcarrier frequency fs = 700 HzIGCT 5SHY35L4503 (4.5kV 91mm)diode (4.5kV 68mm) D65S45 (4.5kV 68mm)
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-38
IGCT Series Connection - Output Waveforms
14.2kV
V4
VoutIout
VDC=14.2kV; Iout,rms=1.5kA;fs=700Hz; fout=50Hz
-10
-5
0
5
10
0 5 10 15 20-2
-1
0
1
2
Vout Iout
Time / ms
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-39
IGCT Series Connection - Test Setup
0,9m
DC-LinkCapacitorsDC-LinkCapacitors
LoadInductorLoadInductor
IGCT-StackIGCT-Stack
RC-SnubberRC-Snubber
Photo Phase Leg
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-40
Trade-off Curves of 5.5 kV and 10 kV IGCTs Similar losses of ideal series connection of 5.5 kV IGCTs and 10 kV IGCTs
Additional snubber losses in real series connection (e.g.)
Static: PR (Rp=25 k) Dynamic: Esnub,C 0.15 Eoff,IGCT
(4.5 kV IGCTs / N=2 @VDC=4500V, Ilout=2 kA)
J=20A/cm2
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-41
Compared to an IGCT series connection (N=2)10 kV IGCTs / diodes feature: Comparable losses for fs=200 Hz-1 kHz Reduction of part count
- by 71% (S 5.5 MVA)- by 41% (S > 5.5 MVA)
Increase of reliability- by 56% (S 5.5 MVA)- by 12% (S > 5.5 MVA)
Simpler stack design Avoidance of RC snubber
Simpler maintenance Avoidance of semiconductor selection and RC snubber
Potential of 10 kV IGCTs and Diodes
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-42
Design of 10 kV IGCTs
Cathode
1050 m
n+ Cathodep Base
n Basen BufferLayer
Low Efficiency
p - Anode
GateAnode
Manufacturing process in line with standard IGCT / GTO process Double diffused p-base Heavily doped cathode emitter Buffer layer for field stopping Low efficiency p Anode
Cosmic ray withstand capability: 2 FIT / cm2
n-base thickness: 1050 m Substrate doping level: 4.2 1012 cm-3
Silicon resistivity: 1000 cm
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-43
Engineering Sample of 68 mm 10 kV IGCT
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-44
Forward Blocking Characteristics at 25C
(
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-45
Forward Blocking Characteristics at 125C
(
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-46
On-state Characteristics
(4.5V @ 1 kA, 125C)VT = VT0 + rdIAVT0 (Threshold voltage): 3.5VRd (On-state resistance):1m
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-47
Test circuit and stack design (VDC=2.4kV-7kV, IA=100A-1kA, Tj=25C-115C, Lcl=13.6H, Ccl=1F, Rcl=2.3 )
Turn-off Characteristics
1R
0,68uF27k
1R
0,68uF27k
1R
0,68uF27k
1R
0,68uF27k
Cbat
Lh
R
D
DUT
D
C
L
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-48
Turn-off Waveforms
Switching characteristics:VDC=5.7 kV, IA=900 A,Tj=85C: Eoff=11 Ws, tf=1 s, ttail=6 s, VAK,max=6.7 kV
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-49
Turn-off WaveformsVAK [V] 1kV / div IA [A] 100A / div
Time [s] 5s / div Time [s] 5s / divOperating conditions:VDC=2.5kV 5.7kV, IA=800A 900A, Tj=85CSwitching characteristics:VDC=5.7kV, IA=900A: Eoff=11 Ws, VAK,max=6.6kV, tf=1s, ttail=6s
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-50
Turn-off Waveforms (SOAR)
Operating conditions:VDC=7kV, IA=1000A, Tj=85CSwitching characteristics:Eoff=14.8 J, VAK,max=8 kV, toff=8s, tf=1s, ttail=5s
World Record !
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-51
T = 1ms10 kA ITSM
-125C TJ MAX
-13 K/kWRth J-C
IA = 1000 A, VDC = 6 kV 11 WsEOFF
VDC = 6 kV1000 AITGQ
1 kA (rd = 1 m, VTO = 3.5 V)
4.5 V VTM
-22 V VGR
for 100 FIT, 100 % DC6 kVVDC
Tj = 0 - 125 C10 kVVDRM
ConditionsElectrical and thermal characteristics
Specification of 68mm 10kV IGCTs
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-52
IGBTs and IGCTs replace GTOs in MV Converters Advantages of IGBTs
IGBT MOS-controlled device Low power GU GU control of dv/dt and di/dt Short circuit current limitation and active turn off Active clamping
Simple mechanics Simple scalability
Conclusions
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-53
Disadvantages of IGBTs Higher losses and poorer Si-utilization than IGCTs Limited power cycling capability of IGBT modules Costs (especially of IGBT press packs)
Development trends Reduction of losses and costs by new technologies and high volume production
Conclusions
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-54
1. Traction Converters (LSC, MSC)
2. Energy Systems (e.g. HVDC, SVC)
3. Industrial Medium Voltage Drives
Applications of HV - IGBTs
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-55
ConclusionsAdvantages of IGCTs
Maximum Silicon Utilization Low costs / MVA Small Part Count + Press pack
High Reliability + Explosion Free Inverters Low On-state and Total Losses
High Efficiency and Power Density 4.5 kV / 5.5 kV IGCT product family
300 kVA-10 MVA Inverters without Series or Parallel Connection
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-56
Conclusions
Disadvantages of IGCTs Shoot through protection
High mechanical stress for IM / SM
Thyristor structure No dv/dt or di/dt control ClampLarger gate drive power and size
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-57
Development trends IGCT: Mature device Increase of device voltage (e.g. 10kV IGCT) Increase of Tjmax (e.g Tjmax=175C). Low cost, efficient series connection
Conclusions
Power Electronics LabAll rights reserved.Prof. Bernet 9/2003-58
1. Industrial Medium Voltage Drives
2. Energy Systems- Railway Interties- Power Quality Products
- e.g. Dynamic Voltage Restorer- Wind Energy Systems
Applications of IGCTs
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