Wojtek Dulinski, Samir Amar-Youcef, Michael Deveaux, Mathieu Goffe
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1 Wojciech Dulinski [email protected] Réunion Capteurs CMOS, 27.02.2006 Wojtek Dulinski, Samir Amar-Youcef, Michael Deveaux, Mathieu Goffe Wojtek Dulinski, Samir Amar-Youcef, Michael Deveaux, Mathieu Goffe IReS, 23 rue du Loess BP 28, 67037, Strasbourg Cedex 02, France IReS, 23 rue du Loess BP 28, 67037, Strasbourg Cedex 02, France University of Frankfurt, Germany University of Frankfurt, Germany Mimosa15 arrays: concept and first test results ARRAY3 ARRAY 1 ARRAY 0 ARRAY 2 3T RTol, S-D swapped (first) UniDepl, 3T, EnclDiode RTol_optimized (first) RTol, LOCOS totally removed(first) UniDepl, Encl.Diode, individual Nwell_ring (second)) RTol, 3T Self Bias (second)) 3T RTol, S-D optimum (second)) UniDepl, 3T, RTol, Common Nwell ring Pitch 20 µm, 3Tpixels Pitch 30 µm, self- bias pixels Size (all arrays): 42x42 pixels
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Mimosa15 arrays: concept and first test results. Wojtek Dulinski, Samir Amar-Youcef, Michael Deveaux, Mathieu Goffe IReS, 23 rue du Loess BP 28, 67037, Strasbourg Cedex 02, France University of Frankfurt, Germany. 3T RTol, S-D optimum (second)). UniDepl, 3T, RTol, Common Nwell ring. - PowerPoint PPT Presentation
Transcript of Wojtek Dulinski, Samir Amar-Youcef, Michael Deveaux, Mathieu Goffe
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Wojtek Dulinski, Samir Amar-Youcef, Michael Deveaux, Mathieu GoffeWojtek Dulinski, Samir Amar-Youcef, Michael Deveaux, Mathieu Goffe
IReS, 23 rue du Loess BP 28, 67037, Strasbourg Cedex 02, FranceIReS, 23 rue du Loess BP 28, 67037, Strasbourg Cedex 02, FranceUniversity of Frankfurt, GermanyUniversity of Frankfurt, Germany
Mimosa15 arrays: concept and first test results
ARRAY3
ARRAY 1
ARRAY 0
ARRAY 2
3T RTol, S-D swapped (first)
UniDepl, 3T, EnclDiode
RTol_optimized (first) RTol, LOCOS totally removed(first)
UniDepl, Encl.Diode, individual Nwell_ring
(second))
RTol, 3T Self Bias (second))
3T RTol, S-D optimum (second))
UniDepl, 3T, RTol, Common Nwell ring
Pitch 20 µm, 3Tpixels
Pitch 30 µm, self-bias pixels
Size (all arrays): 42x42 pixels
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
-25 °C 10°C 40 °C
0 kr
ad
Standard diodeRad-tol diode
55Fe calibration tests:
Temperature: -25°C, 10°C and 40°CIntegration time: 200 µs (10MHz) and 800 µs (2.5 MHz)
To be compared with Mimosa 11 results
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
depleted
nwell
n+p+
pwellpwell
epitaxy (p-)
LDFOXpolygate
bias
p+ p+n+
gndgnd out
Mimosa15: Array0, Sub1 Mimosa15: Array0, Sub1 (C1S1)(C1S1)Optimization of M*2 RadTol type diodeOptimization of M*2 RadTol type diode
ENC = 11.1 ÷ 19.2 el
(« Standard » RadTol (3.4x4.3 µm2): ENC = 12 ÷ 16 el )
Diode dimension: 3.6x4.4 µm2
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
depleted
nwell
n+p+
pwellpwell
epitaxy (p-)
LDFOXpolygate
bias
p+ p+n+
gndgnd out
Mimosa15: Array3, Sub2 Mimosa15: Array3, Sub2 (C4S1)(C4S1)LOCOS totally removedLOCOS totally removed
ENC = 14.8 ÷ 26 elDiode dimension: 3.6x4.4 µm2
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
depleted
nwell
n+p+
pwellpwell
epitaxy (p-)
LDFOXpolygate
bias
p+ p+n+
gndgnd out
Mimosa15: Array3, Sub1 Mimosa15: Array3, Sub1 (C4S2)(C4S2)3T self-bias3T self-bias
ENC = 14.1 ÷ 22.1 elDiode dimension: 3.6x4.4 µm2
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Conclusions 1Conclusions 1
Do we have arguments to adjust the diode design on Mimo*3?Do we have arguments to adjust the diode design on Mimo*3?Not obvious, check after irradiation! Not obvious, check after irradiation!
Not STRONG arguments, if any…Not STRONG arguments, if any…
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Mimosa15: Array1, Sub1 Mimosa15: Array1, Sub1 (C2S1)(C2S1)3T-RadTol, “swapped” (less optimum for noise) S-D on 3T-RadTol, “swapped” (less optimum for noise) S-D on
Reset TransistorReset Transistor
ENC = 16.1 ÷ 20.1 el
Diode dimension: 4x4 µm2
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Mimosa15: Array1, Sub2 Mimosa15: Array1, Sub2 (C2S2)(C2S2)3T-RadTol, “standard” (optimum for noise) S-D on 3T-RadTol, “standard” (optimum for noise) S-D on
Reset TransistorReset Transistor
ENC = 11.6 ÷ 15.2 el
Diode dimension: 4x4 µm2
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Conclusions 2Conclusions 2
Charge losses on “standard” after irradiation???Charge losses on “standard” after irradiation???
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Mimosa15: Array0, Sub2 Mimosa15: Array0, Sub2 (C1S2)(C1S2)UniDepleted Self-bias, Enclosed Diode, Individual Nwell UniDepleted Self-bias, Enclosed Diode, Individual Nwell
ring, All- Periphery Pwell Ringring, All- Periphery Pwell Ring
ENC = 15.3 ÷ 17.8 el
Diode dimension: 8x5.2 µm2
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Mimosa15: Array2, Sub1 Mimosa15: Array2, Sub1 (C3S1)(C3S1)3T Non RadTol, Enclosed Diode, NO Nwell ring3T Non RadTol, Enclosed Diode, NO Nwell ring
ENC = 12.4 ÷ 19.7 el
Diode dimension: 5.2x5.2 µm2
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Mimosa15: Array2, Sub2 Mimosa15: Array2, Sub2 (C3S2)(C3S2)3T RadTol, Common Nwell ring, Small Corner Pwell for 3T RadTol, Common Nwell ring, Small Corner Pwell for
substrate current injectionsubstrate current injection
ENC = 12.3 ÷ 19.5 el
Diode dimension: 4x4 µm2
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Conclusions 3Conclusions 3
A0S2: No significant changes in spectrum for I+=I-=3µA (like in Mimosa11).A0S2: No significant changes in spectrum for I+=I-=3µA (like in Mimosa11).But where I+ current goes? Very low contact resistivity!But where I+ current goes? Very low contact resistivity!
A2S1 and A2S2: Impossible to inject the current! Diode instead of ohmic A2S1 and A2S2: Impossible to inject the current! Diode instead of ohmic contact??? Too small dimension of Pwell or “smoothing” during mask contact??? Too small dimension of Pwell or “smoothing” during mask
generation?generation?
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Wojciech [email protected]éunion Capteurs CMOS, 27.02.2006
Which structure for EM imaging?Which structure for EM imaging?No clear answer, unfortunately… Shall we try the new idea?No clear answer, unfortunately… Shall we try the new idea?
