The NA-61 Vertex Detector – Electronics and readout MIMOSA-26 and its readout M. Deveaux, Goethe...
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Transcript of The NA-61 Vertex Detector – Electronics and readout MIMOSA-26 and its readout M. Deveaux, Goethe...
![Page 1: The NA-61 Vertex Detector – Electronics and readout MIMOSA-26 and its readout M. Deveaux, Goethe University Frankfurt.](https://reader034.fdocuments.us/reader034/viewer/2022051619/56649e6a5503460f94b67f5e/html5/thumbnails/1.jpg)
The NA-61 Vertex Detector – Electronics and readoutMIMOSA-26 and its readout
M. Deveaux, Goethe University Frankfurt
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Who am I ?
M. Deveaux, NA-61 Collaboration Meeting, May 2013 2
Name:
Dr. Michael DeveauxGoethe University Frankfurt
Scientific interests:
• CBM – MVD and Open Charm Physics• CMOS Monolithic Active Pixel Sensors
… the NA61-MVD
2002-2007 with Marc Winter, IPHCSince 2007 with Prof. Joachim StrothSince 2012 HIC for FAIR -
Junior group leader
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What is the topic ?
M. Deveaux, NA-61 Collaboration Meeting, May 2013 3
What are the properties of the MIMOSA-26 sensors?Is MIMOSA-26 suited to measure open charm with NA-61?
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Open charm physics – NA61 vs. CBM
M. Deveaux 4
[W. Cassing, E. Bratkovskaya, A. Sibirtsev, Nucl. Phys. A 691 (2001) 745]
SIS18
SIS100SIS300
SPS
CBM ~ 10-4 D/coll.
NA-61~ 0.1 D/coll.
MIMOSA-26 matches the needs for SPS, not for FAIR => CBM and NA61 are complementary.
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5M. Deveaux
Requirements on an NA-61 MVD
Primary Beam: ~150 AGeV Au Ions (~ 105/s)
Primaryvertex
Secondaryvertex
Short lived particle D0 (ct = ~ 120 µm)
Detector 1Detector2Target
(Gold)
z
• Time resolution to separate 2000 coll/s => ~ 100 µs
• Good radiation tolerance
Reconstructing open charm requires: • Excellent secondary vertex resolution (~ 50 µm)=> Excellent spatial resolution (~5 µm)=> Very low material budget (few 0.1 % X0)
All numbers extrapolated
from CBM simulations
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6
Requirements vs. sensors
NA-61 Hybrid CCD MIMOSA-26
Resolution < 5 µm 30 µm <5 µm 3.5 µm
Material Budget
few 0.1 X0 ~ 1% X0 ~0.1% X0 0.05% X0
Rad. Tol. (1) 3x1010neq/cm² >1014 neq/cm² <109 neq/cm² >1013 neq/cm²
Rad. Tol. (2) ~1 krad >10 Mrad ~1 Mrad > 300krad
Time res. ~100 µs 20 ns ~ 100 µs 115.2 µs
(1) non ionizing dose per week beam on target(2) ionizing dose per week beam on target
All numbers extrapolated from CBM
simulations assuming 2000 Au+Au coll./s
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7
CMOS-MAPS, the fundamentals
Monolithic Active Pixel Sensors(MAPS, also CMOS-Sensors)
• Invented by industry (digital camera)
• Modified for charged particle detection by the PICSEL group, IPHC Strasbourg
Selected communities participating in MAPS R&D
CBM MVD
ALICE ITS
STAR HFT
EU-DET
TESLA ILC Vertex .
2000 2005 2010
AIDA
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8M. Deveaux
MIMOSA-26: The operation principle
Reset+3.3V+3.3V
Output
SiO2 SiO2 SiO2
N++ N++N+ P+
P-
P+
15µm50µm
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Pixel readout concept
9
External ADCSensor Offline Cluster
finding
Output
Add pedestal correction
~1000 discriminators
On - chip cluster-finding processor
Output: Cluster information(zero surpressed)
MAPS are built in CMOStechnology
Allows to integrate:• sensor• analog circuits• digital circuits
on one chip.
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Block diagram of MIMOSA-26
M. Deveaux, NA-61 Collaboration Meeting, May 2013 10
8 x analog out (obsolet)
Readoutsequencer
Slow controlinterface (JTAG)
Bias DACs (Threshold generation…)
Coll. discri-minators
Zero suppr.computer
Outputmemory
Sensor array (21200 x 10600 µm²)
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Interface of MIMOSA-26
M. Deveaux, NA-61 Collaboration Meeting, May 2013 11
JTAG clkJTAG inJTAG out
Vdd (3.3V)VddA (3.3V)VCmp (~ 2V)
Clk (80 MHz)Start (digital)
Data (2 x 80 MHz)Data Clk
Temp inTemp out
GND
Relatively simple interface (~50 pins for > 600.000 pixels)
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Native data encoding of MIMOSA-26
M. Deveaux, NA-61 Collaboration Meeting, May 2013 12
S4 S5
S2 S3
S0 S1SL0
SL1
SL2
State: “Status/Line”
0 0 1 1 1 0 0 0 1 0
(for each line containing a fired pixel)
Readout direction
Q. Li
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Native data encoding of MIMOSA-26
M. Deveaux, NA-61 Collaboration Meeting, May 2013 13
S4 S5
S2 S3
S0 S1SL0
SL1
SL2
0 0 1 1 1 0 0 0 1 0
“State”-Up to 4 consecutive fired pixels
Readout direction
Q. Li
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Limitations of data encoding
M. Deveaux, NA-61 Collaboration Meeting, May 2013 14
Max. 9 states/row
… 18 banks (64 cols.)Max. 6 states/bank
Output BufferMax. 2x 570 states
80 Mbps 80 Mbps
Overflow concept: Truncate and indicate
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A comment on the synchronization of the readout
M. Deveaux, NA-61 Collaboration Meeting, May 2013 15
Sensors:• Run freely and contineously• Cannot react on trigger• Provide internal time information• Deterministic data push interface
FPGA-Boards:• Reduce data (remove idle bits)• May handle trigger requests• Check synchronization• Handle network issues
• Proposed hardware platform:GSI TRB-3 board
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The readout system (CBM-MVD Prototype)
M. Deveaux, NA-61 Collaboration Meeting, May 2013 16
12 Sensors
TrbNetTRB-board
Ethernet
Customized
B. M
ilanovic
Sensors
DAQ
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The readout chain (CBM-MVD prototype)
M. Deveaux, NA-61 Collaboration Meeting, May 2013 17
C.
Sch
rade
r, B
. N
eum
ann,
M.
Koz
iel,
IKF
Fra
nkfu
rt
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The readout chain II
M. Deveaux, NA-61 Collaboration Meeting, May 2013 18
TRB2 + GPAddon
JTAG Chain 1
JTAG Chain 2
JTAG Chain 3
TDO
3x JTAG, SRC
3x JTAG chainController
MAINBoard
Patch Panel
one clockone START
B. M
ilanovic
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Summary and conclusion
M. Deveaux, NA-61 Collaboration Meeting, May 2013 19
MIMOSA-26 matches the requirements for an NA-61 MVD
• 1152x576 pixels (2 cm²), 18.4 µm pitch• 115 µs frame rate• 50 µm (Si) thickness=> 0.05 X0
On-chip discriminators provide digital high level protocol
Stable readout has been demonstrated with TRB-FGPA boards
Further reading:
• The MIMOSA-26 manual: http://www.iphc.cnrs.fr/IMG/pdf/M26_UserManual_light.pdf• General performance: • Data sparsification: A. Himmi et al, http://www.iphc.cnrs.fr/IMG/ah_suze_Twepp2009_proc.pdf• Radiation tolerance: M. Deveaux et al, 2011 JINST 6 C02004,doi:10.1088/1748-0221/6/02/C02004
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It’s no science fiction
M. Deveaux, NA-61 Collaboration Meeting, May 2013 20
The CBM-MVD prototype:
Based on MIMOSA-26
Results from SPS-beam test:• MIP efficiency: > 99
%• Spatial resolution: ~ 4
µm
Vacuum compatible cooling support (CVD diamond)
Material budget: <0.3% X0 (incl. two silicon layers and support)
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Latch-up – a radiation induced, reversible short circuit
M. Deveaux, NA-61 Collaboration Meeting, May 2013 21
Latch-up may occure if particles hit sensitive structures like CMOS-Inverters.
The structures of the inverter act as parasitic thyristor, which is switched on=> Short circuit in the device
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Latch-up – a radiation induced, reversible short circuit
M. Deveaux, NA-61 Collaboration Meeting, May 2013 22
IC affected by latch - up
If no action is undertaken, the device is destroyed by over-current (thermal overload).
Detecting the over current and performing power cycling solves the problem (thyristor is switched off).
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Latch-up
M. Deveaux, NA-61 Collaboration Meeting, May 2013 23
Sensor
Computer
Sensors must be protected against latch-up
„May 2009 Latch up tests - report ”Michal Szelezniak, Leo Greiner
Not Mimosa-26
Mi26- sensors
Mi26- computer