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WIMNACT39 TITECH 7/Feb/2014 Optical Interconnect and Silicon … · 2014. 2. 10. · Network...
Transcript of WIMNACT39 TITECH 7/Feb/2014 Optical Interconnect and Silicon … · 2014. 2. 10. · Network...
Tohru Mogami
Photonics Electronics Technology Research Association (PETRA),
Japan
WIMNACT39
TITECH
7/Feb/2014
Copyright 2013 PETRA
Optical Interconnect
and
Silicon Photonics
WIMNACT39, TITECH, 7/Feb/2014 1
Outline
Copyright 2013 PETRA
1. What is the issues of ICT world?
2. What is silicon photonics?
3. New Photonics Project
4. Summary
WIMNACT39, TITECH, 7/Feb/2014 2
Copyright 2013 PETRA3
Digital electronics innovation has changed the world and our societies.
This innovation has brought them the ICT revolution by using the advanced computer systems, the computer network, Internet, and consumer electronics, since 1970’s.
This is mainly based on the Si-LSI’s development.
Digital Electronics Innovation
Mobile phone
Digital
Video
i-phone
i-pad
1970 1980 1990 2000 2010 2020
Note-PC
Walkman
PC6000
Super-computer
i-pod
Mobile
phone
Main flame10 Peta(1015)
Flops
35 Tera(1012)
Flops
What’s next?
• Exa-Flops SC
• 8K TV
• Friendly
tablet/phone
WIMNACT39, TITECH, 7/Feb/2014 3
Copyright 2013 PETRA
Information Explosion
1.2 ZB2010
Source; IEICE vol.94, no.8, 2011
Pa
pe
r
Pri
nti
ng
Te
lep
ho
ne
Co
mp
ute
r
Inte
rne
t
Ca
ve
pa
inti
ng
The amount of the “Information” which circulates in the world has
been expanding more than twice in 2 year since 2006.
In 2010, the amount of the Information exceeding ZB (Zetta Byte)
was created in one year.
This mainly comes from the Internet spread and especially picture
information, such as digital camera, smart-phone.
Info-Plosion Projectstarted in 2006.
(Exa: 1018)
(Zetta: 1021)
The amount of 1 tera-byte is equal to the information of 1000-year newspapers.
The amount of 1 zetta-byte is equal to that of 1 million-year newspapers.
4WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA
Stand-by Leakage Current
Sys
tem
Clo
ck
(H
z)
Network
10pA/Tr 100nA/Tr1nA/Tr
1
GHz
100
MHz
10
GHz
Digital AV
Mobile Phone
Mobile
Computing
High-performance
Server
100fA/Tr
To handle and control a lot of information, we need more
high-performance LSI’s.
Digital electronic system and the Internet of Things need
a variety of Si-LSI’s according to its applications.
Future digital society requires more highly functional LSI’s
for a lot of applications.
Need More Innovation
5WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA
I. A. Young, et al., IEEE Communications Magazine, 48, 184-191 (2010)
What is bottleneck of LSI’s?
Bottleneck of LSI’s can be a bandwidth between chip-to-chip,
because effective bandwidth has been increasing by 2x performance
per 2 years and Tera-scale communication is required until 2015.
Both Scaling and performance are the challenge of the conventional
Cu/Low-k and assembling tech. We need new concept.
6WIMNACT39, TITECH, 7/Feb/2014
Outline
Copyright 2013 PETRA
1. What is the issues of ICT world?
2. What is silicon photonics?
3. New Photonics Project
4. Summary
7WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA8 8
Si Photonics
OE device (photo-detector)
I/O device with low-loss
Wave Guide
EO device (modulator)
To realize the photonics-electronics convergence system, Si
photonics is important.
Silicon photonics is the technology to integrate photonic systems
which mainly use silicon as optical devices. The silicon is usually
patterned with nano-meter lithography, into microphotonic
devices.
Modulator is a conversion device from electrical signal to optical
one.
Photo-detector is a conversion device from optical to electrical.
Wave guide is a optical signal line to connect photonics devices
and systems.
WIMNACT39, TITECH, 7/Feb/2014 8
100
10-1
10-2
10-3
Ab
so
rptio
n C
oe
ffic
ien
ts, α
(cm
-1)
1.1 1.2 1.3 1.4 1.5 1.6Wavelength (μm)
O b
an
d
E b
an
d
S b
an
d
C b
and
L b
an
d
Absorption Cofficient
Transparent for l>1.2μm
3.50
3.45
3.40
3.55
Refractive Index
Higher index than silica (~1.4)
Refr
active I
ndex
Properties of Silicon in IR region
Merit of silicon as waveguide media;Size down of optical circuits by confinement effect due to higher refractive index.
Copyright 2013 PETRA
T. Horikawa, FOE2013
9WIMNACT39, TITECH, 7/Feb/2014
Lower crad
Upper crad
Si substrate
Si waveguide
2μm
No mode exist 1.5
2.0
2.5
3.0
1.0200 300 400 500 600
E
M
Light propagation in silicon
Effect
ive I
ndex
Waveguide Width (nm)
Optical field extends to crad around Si waveguide
・Optical field extention to cradmeans that effective index is an important parameter.・Effective index depends on
waveguide width.
・Only lowest mode can propagate for narrower waveguide width.
Copyright 2013 PETRA
T. Horikawa, FOE2013
10WIMNACT39, TITECH, 7/Feb/2014
1. SOI Wafer
SiO2
Si
Si 基板
SiO2
Si
Si 基板
SiO2
Si
Si 基板
レジスト
SiO2
Si
Si 基板
SiO2
Si
Si 基板
レジスト
SiO2
Si コア
Si 基板
SiO2
Si コア
Si 基板
2. Si Patterning 3. Si Etching 4. SiO2 Deposition
SiO2
Si コア
SiO2
Si 基板
SiO2
Si コア
SiO2
Si 基板
Si Core
SiO2 Crad
Waveguide by CMOS Technology
Si waveguide is made from SOI(Si on
Insulator) layer by dry etching
Low cost and highly reproducible fabrication by using CMOS process technology
Copyright 2013 PETRA
T. Horikawa, FOE2013
11WIMNACT39, TITECH, 7/Feb/2014
0.1
0.01
0.001
0.00011017 1018 1019 1020
Refr
active I
ndex C
hange
Carrier Density (cm-3)
Optical Modulator
Phase shift by Index Modulation
Carrier injection(e-, h+) causesIndex change
i-SiN-Si P-Si
e- h+
Electric
Signal
Electrical/Optical Conversion
Copyright 2013 PETRA
T. Horikawa, FOE2013
12WIMNACT39, TITECH, 7/Feb/2014
100
10-1
10-2
10-3Absorp
tion C
oeffic
ient, α
(cm
-1)
1.0 1.2 1.4 1.6Wavelength (μm)
1.8
104
103
102
101
Ge
Si
O b
an
d
E b
an
d
S b
an
dC
ba
nd
L b
and i-Ge
N-Ge P-Gee-h+
Absorption of signal lighthappens in Ge film
Photocurrent due to Photovoltaic Effect
Sensitivity of Ge is larger
than Si for IR region.Ge
SOI
BOX
Si sub.
SiO2Al
Si cap
1mm
Optical/Electrical Conversion
Photo-detector
Copyright 2013 PETRA
T. Horikawa, FOE2013
13WIMNACT39, TITECH, 7/Feb/2014
Outline
Copyright 2013 PETRA
1. What is the issues?
2. What is silicon photonics?
3. New Photonics Project
4. Summary
14WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA
New National Projects, which are Future Pioneering Pj’s (FPP), have
started since 2012.
New direction of FPP
• Constructed for better social life and industry activation
New scheme of FPP
• Constructed for commercialization based on R&D results
Long-term
Budgets
for high-risk targets
Dream team
for
commercialization
Collaboration
b/w
Ministries and
Cabinet Office
New Scheme
Disruptive tech.
for social impact
Strategic
Execution
Core tech.
by Japan
New Direction
Along this direction, PJ target can
be selected & development can
be advanced.
Along this scheme, both R&D and
commercialization can be advanced.
Future Pioneering Projects
15WIMNACT39, TITECH, 7/Feb/2014
Comp. AXx production
Copyright 2013 PETRA
Future Pioneering Projects
New Projects from 2012
• Photonics Electronics Convergence Technology For Power-
Reducing Jisso System Project
by collaboration b/w METI and CAO
• Project on Magnetic Materials for High-efficiency Motors
by collaboration b/w METI and MEXT
• Artificial Photosynthetic Chemical Process Project
by collaboration b/w METI and MEXT
Joint ventureZz production
Comp. B
Comp. D
Comp. C
Comp. A
PROUniv.
E
Univ. F
Basic Research (by other Ministries and Cabinet Office budget)
Comp. C
Comp. A
Univ. E
ConsortiumYy production
Target
SelectionCommer-
cializationR&D for commercialization (by METI budget)
collaboration
support
PRO
16WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA
Outline
Project Leader : Yasuhiko Arakawa, Professor of the University of
Tokyo
Term: FY 2012~2021
Sponsor: METI for FY2012, NEDO from FY2013.
Organization: PETRA
Member companies:
AIST, Fujitsu, Furukawa Electric, NEC, NEL, NTT, OITDA, OKI,
Toshiba
Joint research organization:
Univ. of Tokyo, Kyoto Univ., Tokyo Institute of Technology,
Yokohama National Univ., WASEDA Univ.
By developing optical wiring and optical devices, we realize
photonics electronics convergence tech. and this leads to power-
reduction, high-performance, and small form factor for electronics
components, and significantly reduction of their power consumption.
17WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA
5cm
Next generation
server board
Photonics electronics
convergence interposer
50cm
Optical waveguides
between chips
LSI
Rack-mounted server Photonics electronics
convergence server
Optical wiring
on board
Objective
Promote creation of new functions from integration and packaging
of key tech’s which take advantages of characteristics of optical
circuits to realize downsizing and power-reduction of ICT equipment,
and prove effectiveness of optical wiring at system level as a
forerunner and target to achieve its commercialization.
18WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA
2012 2014 2018 2020 2022
0.1T
0.3T
1T
10T
3T
Sy
stem
per
form
an
ce
1st stage 2nd stage 3rd stage
(bps)
Interposer w/
Photonics
Electronics
IntegrationLSI package w/
Optical cableOptical I/O
Core
AOC LSI & Package Server on package
Year
Project Roadmap
10 years are divided 3 stages.
1st stage: Develop optical IO core for key tech. and AOC for system
tech.
2nd stage: Develop LSI package with optical IO cores and LSI with
optical fiber cables.
3rd stage: Develop photonics
electronics convergence
interposer and photonics
electronics printed-circuit
board.
The 1st chip will be exhibited
next year.
This project target is to
reduce the size of current
server rack equipment to a
board size and reduce 30%
of its power consumption.
Key tech.
System tech.
19WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA
Summary
For ICT systems, one of today’s bottlenecks is the
bandwidth b/w LSI’s.
Optical interconnect has the wide bandwidth
characteristic as interconnect advantages.
Silicon photonics is the technology to integrate photonic
systems which mainly use silicon as optical devices.
“Photonics Electronics Convergence Technology For
Power-Reducing Jisso System” Project is one of Future
Pioneering Projects (FPP).
New project’s objective is to promote creation of new
functions from integration and packaging of the
advanced Si photonics tech’s and prove effectiveness
of optical wiring at system level.
The 1st chip will be exhibited this year.
20WIMNACT39, TITECH, 7/Feb/2014
Copyright 2013 PETRA
Acknowledgements
This work is partly supported by NEDO.
21WIMNACT39, TITECH, 7/Feb/2014