2012 DRCSS Han of Excellence Inductee Ingrid Stitt Ingrid ...
TimePix / InGrid Problems and solutions
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Transcript of TimePix / InGrid Problems and solutions
8’’ TimePix wafer
107 single chips
Thickness 725 µm
Surface materials:- Aluminum (aluminum oxide)
- Silicon nitride- Silicon oxide
TimePix chip
14111 m
161
20
m
256 x 256 pixels
20 m
20
m
10 m
CH
IPE
DG
E
Col
umn
0
Col
umn
1
Col
umn
2
Col
umn
3
Col
umn
4
Col
umn
251
Col
umn
252
Col
umn
253
Col
umn
254
Col
umn
255
CH
IPE
DG
E
CHIPEDGE
55
m
55 m
20 m
20
m
28.3 m
48.2
2 m
48.2
2 m
57.7 m
Pixel Row 255
Pixel Row 254
Pixel Row 253
Pixel Row 1
Pixel Row 0
Detector Guard Ring Row
Snake Top Row
Snake Bottom Row
Main technological steps for the formation of structureTimePix / SU-8 / Al grid
4. Formation of structure “support” / grid
1. Formation of protection layer
2. Deposition of spacer material
3. Deposition of the Grid material
Polyimide mask
Microsystems HD 4100 polyimide - negative tone, solvent developed, photodefinable polyimide
Steps:• Spinning• Baking• Exposition• Development• Silicon nitride deposition• Chemical activation of polyimide• Stripping
Advantage:• Silicon technology compatible
• Perfect alignment• No residuals
Disadvantage:• Temperature sensitive process
• Time consuming process• mechanical scratching of bonding pads
Oxford 80 (PECVD)
PECVD
Plasma enhanced chemical vapor deposition
Silicone oxide or silicone nitride formation
Plasma power max 600 W at 187.5 kHz, max 300 W at 13.56 MHz plasma frequency
Substrate temperature 100 up to 400 °C Layers contain hydrogen
- C
- O
Bisphenol A Novolak epoxy oligomer
SU-8 photoresist composition:
- Gamma Butyrolactone 22-60%
- Up to 10 % Triarylsulfonium / Hexafluoroantimonate Salt (3.3% for SU-8/50)
- Propylene Carbonate 1-5%
- Epoxy Resin 35-75%
SU-8 - epoxy-based negative photoresist
R1
O
CH CH2
+ H+
R1
OH
CH
CH2
++ R1
O
CH CH2
- H+R1
O
CH
CH2
R1
O
CH
CH2
SU-8 crosslinking mechanism
Al layer
Sputtering system Leybold Z660
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25x x x x x x x x x x x x x x x x x x x x x x
DC 50%, no sputter etching, 30 sec – the deposition time for every sputtering run, + cooling delay
Total thickness: ~ 800 nm
deposition of Al layer
Chip
SU-8 photoresist
aluminum
SU-8 column
protection layer
Chip
Pixel pad
Cross-linked SU-8 photoresist
Development of SU-8
1. Acetone2. Acetone:IPA:H2O (1:1:2)3. Acetone:IPA:H2O (1:1:1)4. Acetone:IPA (1:1)5. Microstrip 60016. H2O7. IPA8. Acetone9. Drying in the air
IZM-5 started: W0062 (4 m SixNy) and W0063 (8 m SixNy)
Modified InGrid (mInGrid) - started
Summary
W0058 EW5MWBX (W0058 EW5MWBX (4 m SixNy) in process) in process
W0059 W0059 EU5MWDX ( (4 m SixNy) broken) broken
W0060 E85MWZX (W0060 E85MWZX (8 m SixNy) in process) in process
W0061 E15MVPX (W0061 E15MVPX (8 m SixNy)) requires the cleaningcleaning