The Helmholtz program ‘Research with Photons, Neutrons...
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Transcript of The Helmholtz program ‘Research with Photons, Neutrons...
The Helmholtz program ‘Research with Photons, Neutrons and Ions (PNI)’
Detectors for High and Low Energy Photons
Heinz GraafsmaDESY Photon Science Detector Group
Research Field Structure of Matter
PNI Review 21.-24. April 2009
2PNI Review 22.-24.4.2009
Detectors for High and Low Energy Photons
The 6M-Pilatus detector (PSI)
3PNI Review 22.-24.4.2009
Detectors for High and Low Energy Photons
500 μm Si
500 μm G
aAs700 μm
Ge
Ge: + “perfect” material+ available via industry- processing challenging- small bandgap (cooling) but:+ small pixels small leakage I
Mid-term goal:
• Ge sensor• (10 cm)2 area• classical modules• using existing chips
Long-term goal:
• Ge sensor• 4-side buttable units• 3D-ASICS
4PNI Review 22.-24.4.2009
Detectors for High and Low Energy Photons
special thin window
standard window
Silicon
Low photon energies: * thin entrance windows* low noise or* amplifying structures
+ pnCCD (MPI-HLL)+ Avalanche Photo Diodes
Mid-term goal:
• duplicate 1k x 1kpnCCD (MPI-HLL)
(under development)
Long-term goal:
• develop 2k x 2kpnCCD (MPI-HLL)
(under study)
CMX
CMX
CMX
CMX
ADCADC
ADCADC
ADCADC
ADCADCADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC 1k pixels
1k pixels
3 keV
Ongoing Developments
The Helmholtz program ‘Research with Photons, Neutrons and Ions (PNI)’
Ongoing Detector Developments at DESY-FS (DS)
Heinz GraafsmaDESY Photon Science Detector Group
Research Field Structure of Matter
PNI Review 21.-24. April 2009
7PNI Review 22.-24.4.2009
The Adaptive Gain Integrating Pixel Detector for XFEL
AGIPD: DESY, PSI, U-Bonn, U-HH
C1
C2
C3
Leakage comp.
Discr.
Contr
ol lo
gic
Readout amp.
3 levels
Filter/write amp.
Analogue pipeline
TrimDAC
Vthr ≅ VADCmax
Anal
ogue
enco
din
g
••wide dynamic input rangewide dynamic input range••multiple (3) scaled feedback capacitorsmultiple (3) scaled feedback capacitors••reduced ADC resolution reduced ADC resolution
(10 bit instead of 12 bit)(10 bit instead of 12 bit)••analogue + digital (2 bit) pipelineanalogue + digital (2 bit) pipelineAnalogue pipeline
Colu
mn b
us
Filter/write amp.
8PNI Review 22.-24.4.2009
The Adaptive Gain Integrating Pixel Detector for XFEL
Mechanics and cooling
Interface electronics
9PNI Review 22.-24.4.2009
The 1M pnCCDs for FLASH and LCLS
CAMP: MPG, DESY, ….
Detector 1
Detector 2
• Cooling• Mechanics• Exp. integration
pixel size75x75 µm2
Total sensitive system area:
59 cm
readout time per frame: 4 ms i.e. 250 fps
can be triggered externally
3 mm central hole1st detector moveable
10PNI Review 22.-24.4.2009
Detectors for PETRA-III (and DORIS)
• Equipping P3 with state of the art detectors• Building up of a Detectors Loan Pool• Expert support to Station Scientists
2D APD-Array: DESY, ESRF, U-Heidelberg, PKI, SPring-8
SensorPCB
Chip Chip
PCB
Cooling (metal)
• 32 x 32 pixels• 300 microns• ~ 1 nsec timing• few nsec framing
Diamond X-BPM’s: DESY, ESRF, AT Ltd.
• single crystal CVD Diamond• RF based electronics (same as e-BPMs)
Backup slides
12PNI Review 22.-24.4.2009
Detectors for PETRA-III (and DORIS)
• Equipping P3 with state of the art detectors• Building up of a Detectors Loan Pool• Expert support to Station Scientists
2D APD-Array: DESY, ESRF, U-Heidelberg, PKI, SPring-8
SensorPCB
Chip Chip
PCB
Cooling (metal)
• 32 x 32 pixels• 300 microns• ~ 1 nsec timing• few nsec framing
Hybrid Pixel Detectors
Au
Sensor Substrate
InGaAs
UBM
Insulator
CMOS ROIC
AuUBM
Al
bumpAu
Sensor Substrate
InGaAs
UBM
Insulator
AuUBM
Al
Au
Sensor Substrate
Al
UBM
InsulatorUBM
Al
Hybridization
Cut the sensor as close as possible
Use thinned readout chips
Stay within the exact n-fold pixel pitch
Gaps between modules
3D integration• Edgeless Silicon Sensors• (Pixel redistribution)• Thinned CMOS pixel ASICs• with Through-Silicon Via contacting• High bandwidth readout (Gigabit Ethernet)
Tile-able Microsystems, produced in Industry
Medipix 2.1ROIC
Courtesy Jan Visschers; NIKHEF
ASIC
The 3D future
Bulk
ASIC 1 (ampl)
SENSOR
ASIC 2 (ADC)
ASIC 3 (Storage)
ASIC 4 (I/O)
SENSOR
Current situation Desired situation
ASIC
insensitive gaps: ≈ 800 µm
Full Frame imagingarea per chip512 x 1024
pixel size75x75 µm2
Total sensitive system area:
59 cm
The full sensitive areaof the system is 59 cm2
with 75 µm pixels, 1024 x 1024
CMX
CMX
CMX
CMX
CMX
CMX
CMX
CMX
total areaper chip:29.5 cm2
readout time per frame: 4 ms i.e. 250 fps
can be triggered externally
device fabrication isfinished now
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADCADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
16 ADCoutputs
16 ADCoutputs
hole diameter: 3 mm
transfer of signal charges
Chip 2: area 29.5 cm2
format: 1024 x 512
Chip 1: area 29.5 cm2
format: 1024 x 512
Detector 1
Detector 2CFEL-ASG Chamber
Imaging system: (a) format 1024x1024, pixel size 75x75 µm2, 8x8 cm2 focal surface(b) center hole, typically 3 mm
Due to overlap of the two detectors, effective insensitivearea can be reduced to 1.6 mm, insensitive gaps: 0.8 mm
(c) movement in y-direction: up to 45 mm
Full Frame imaging,format per chip1024 x 1024
pixel size75x75 µm2
The full sensitive areaof the system is 239 cm2
with 75 µm pixels, 2048 x 2048
CMX
CMX
CMX
CMX
total area per chip:59 cm2, per system:
236 cm2
readout time per frame: ≈ 8 ms
i.e.≈ 125 fps
devices are scheduledfor fabrication end 2010ready: end 2011
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADCADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
16 ADCoutputs
Chip 1: area 59 cm2
format: 1024 x 1024
transfer of charges
This system is 3 – sidebuttable, can be extended toa 2048 x 2048 array
CMX
CMX
CMX
CMX
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADCADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
16 ADCoutputs
Chip 1: area 59 cm2
format: 1024 x 1024
transfer of charges
CMXCMXCMXCMX
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
16 ADC
outputs
Chip 1: area59 cm
2
format: 1024 x 1024
transferof charges
CMX CMX CMX CMX
ADC
ADC ADC
ADC ADC
ADC ADC
ADC
ADC ADC
ADCADC
ADC
ADCADC
ADC
16 A
DCou
tput
s
Chip 1
: ar
ea59
cm
2
form
at:
1024
x 1
024
tran
sfer
of c
harg
es
2048 x 2048 CCD array(resolution points:
at least 4kx4k @ 1 keV)
pixel size: 75 x 75 µm2
total area: 236 cm2
readout time: < 8 ms
read noise < 15 electrons
Charge handling capacity:> 1000 photons pp
Energy 0.1<E<24 keV
thickness: 500 µm
operation temperature:-40oC