TES@INRIM for SIMP - Agenda (Indico) · Pisa 18/06/2019 SIMP meeting– TES@INRiM M.Rajteri 17/20...
Transcript of TES@INRIM for SIMP - Agenda (Indico) · Pisa 18/06/2019 SIMP meeting– TES@INRiM M.Rajteri 17/20...
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 1/20
TES@INRIM for SIMP
Strada delle Cacce 9110135 Torino - Italy
M. Rajteri
Quantum Metrology and Nanotechnologies Division
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 2/20
SIMP request:
Target: E = 0.02 meV @ 0.4 meV (100 GHz)
Sviluppi per 2019:
Fabbricazione di film con TC ridotta a 40-50 mK
Miglioramento del sistema di misura:
schermi e filtri
Test dc-squidnell’ADRFabbricazione di
nanostrip e Caratterizzazione con
misure a 4 fili
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 3/20
SIMP request
Target: E = 0.02 meV @ 0.4 meV (100 GHz)
Sviluppi per 2019:
Fabbricazione di film con TC ridotta a 40-50 mK
Miglioramento del sistema di misura:
schermi e filtri
Test dc-squidnell’ADRFabbricazione di
nanostrip e Caratterizzazione con
misure a 4 fili
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 4/20
Before deposition: surface ion etching 30” Pressure base < 10 -7 Pa
Ti deposition by e-beam:V=6 kV, I=50 mA, Rate: 0.2-0.3 nm/s, Pressure: 2x10-5 ÷ 5x10-6 Pa
Au evaporation by heater:Rate: 1.5 nm/minPressure < 5x10-6 Pa
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 5/20
Ti Films• Ti films show, for
thickness > 20 nm, asuperconductingbehaviour.
• Below 20 nm Tc fall downthe base temperature ofADR < 30 mK.
• Similar trend wasobserved on Ti growth inother UHV system.
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 6/20
Ti film of 23 nm proximized by
increased Au films.
Ti Film thicknessconstant vs Au
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 7/20
Tc of TiAu vs Ti thicknessfor a constant Au layer of27 nm.
Lowest Tc=42 mK wasobtained with a TiAubilayer of:Ti=11 nm and Au=27 nm
The red curve iscalculated by Usadelequation.
Au Film thicknessconstant vs Ti
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 8/20
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 9/20
SIMP request
Target: E = 0.02 meV @ 0.4 meV (100 GHz)
Sviluppi per 2019:
Fabbricazione di film con TC ridotta a 40-50 mK
Miglioramento del sistema di misura:
schermi e filtri
Test dc-squidnell’ADRFabbricazione di
nanostrip e Caratterizzazione con
misure a 4 fili
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 10/20
Large area TES 100 m2 - 400 m2
• Positive process 110 C x 3’• Ion etching 400 V x 4’30” or • Chemical etching KI+I2 (Au) and 1% Hf (Ti) • Wiring Nb, Al or Ti by sputtering and lift-off
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 11/20
20 m x 20 m
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 12/20
EBL Mask for TEST
6x6x3 nanowire for TESTStrip width 150 nm ÷ 1 m Titanium deposition 25 nm
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 13/20
SIMP request
Target: E = 0.02 meV @ 0.4 meV (100 GHz)
Sviluppi per 2019:
Fabbricazione di film con TC ridotta a 40-50 mK
Miglioramento del sistema di misura:
schermi e filtri
Test dc-squidnell’ADRFabbricazione di
nanostrip e Caratterizzazione con
misure a 4 fili
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 14/20
Expected in July 2019
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 15/20
Test board for 4-wire measurement
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 16/20
Up to 7 Low Pass Filters:
5 GHz1.45 GHz80 MHz300 kHz
LC Filters
RC Filters
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 17/20
To be tested with nanostrip
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 18/20
SIMP request
Target: E = 0.02 meV @ 0.4 meV (100 GHz)
Sviluppi per 2019:
Fabbricazione di film con TC ridotta a 40-50 mK
Miglioramento del sistema di misura:
schermi e filtri
Test dc-squidnell’ADRFabbricazione di
nanostrip e Caratterizzazione con
misure a 4 fili
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 19/20
2.7 K 35 mK
• The V() curve is «modulated» and noisy at 35 mK
• After the test some wire bonding have been damaged and a new squid holder is under development
V
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Pisa 18/06/2019 SIMP meeting – TES@INRiM M.Rajteri 20/20