Task 6.1: Role of alloy scattering in strained SiGe nano MOSFETs

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www.c2s2.org 1 2 3 4 5 6 8 7 9 10 11 12 MSD Annual Review May 10-11, 2011 Task 6.1: Role of alloy scattering in strained SiGe nano MOSFETs S. Mehrotra, A. Paul, M. Luisier and G. Klimeck ECE, Purdue University and NCN

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Task 6.1: Role of alloy scattering in strained SiGe nano MOSFETs. S. Mehrotra, A. Paul, M. Luisier and G. Klimeck ECE, Purdue University and NCN. - PowerPoint PPT Presentation

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MSD Annual Review May 10-11, 2011

Task 6.1: Role of alloy scattering in strained SiGe nano MOSFETs

S. Mehrotra, A. Paul, M. Luisier and G. KlimeckECE, Purdue University and NCN

Student Awards in EECS Fall 2013...Student Awards in EECS Fall 2013 Jesús A. del Alamo – Student Awards Chair Winston Chern “Compressively Strained Ge Trigate p-MOSFETs” Judy

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Ballistic one-dimensional holes with strong g-factor anisotropy in … · 2018. 4. 16. · Ballistic one-dimensional holes with strong ... tum wires gate-defined in a strained SiGe/Ge/SiGe

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