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Step 1: DC characteristics of NMOS transistors

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Tanner details regarding nmos dc characteristics and inverter characteristics and pmos DC CHARACTERISTICS COMMANDS AND WAveforms

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Step 1: DC characteristics of NMOS transistors

Fig: Schematic Drawn on S-Edit V-14.1

Fig: Commands applied using T-Spice V-14.1

Fig: Waveform on W-Edit V-14.1

Step 2: DC characteristics of PMOS transistors

Fig: Schematic Drawn on S-Edit V-14.1

Fig: Commands applied using T-Spice V-14.1

Fig: Waveform on W-Edit V-14.1

Step 3: DC characteristics of Inverter by first creating an instance using NMOS and PMOS transistors

Fig: Schematic Drawn on S-Edit V-14.1

Fig: Schematic Drawn on S-Edit V-14.1

Fig: Commands applied using T-Spice V-14.1

Fig: Waveform on W-Edit V-14.1

Step 4: Static power Vs input voltage Characteristic for Forced stack Technique using two transistor in place of single transistor respectively. Technology 500nm, M=2 for PMOS, and M=1 for NMOS

Step 4: Static power Vs input voltage Characteristic for Forced stack Technique using two transistor in place of single transistor respectively. Technology 500nm, M=2 for PMOS, and M=1 for NMOS

******************************************************************************** * SPICE netlist generated by HiPer Verify's NetList Extractor * * Extract Date/Time: * L-Edit Version: * * Rule Set Name: * TDB File Name: D:\Tanner_files\minimumsizenmos.tdb Wed Mar 27 11:04:36 2013 L-Edit Win32 14.11.20090811.09:15:20

* Command File: C:\Users\gHost\Documents\Tanner EDA\Tanner Tools v14.1\L-Edit and LVS\Tech\Generic0_25um\Generic_025.ext * Cell Name: * Write Flat: Cell0 NO

********************************************************************************

.INCLUDE SpecialDevices.md ****************************************

M1 1 2 3 4 NMOS l=2.4e-007 w=6e-007 ad=3.96e-013 as=3.96e-013 pd=2.52e-006 ps=2.52e-006 $ (29.76 25.02 30 25.62)

M1 1 2 gnd gnd NMOS l=2.4e-007 w=6e-007 ad=3.96e-013 as=3.96e-013 pd=2.52e-006 ps=2.52e-006 $ (29.76 25.02 30 25.62) v1 1 GND 3.3 v2 2 GND 3.3 .lib "D:\Tanner_files\Generic_025.lib" tt .dc source v1 lin 100 0 3.3 sweep source v2 lin 5 0 3.3 .print dc id(m1) p(v1) p(v2)

Results Idn = 594 mA For inverter where PMOS has M=1 **************************************** M2 1 2 vdd vdd PMOS l=2.4e-007 w=6e-007 ad=3.96e-013 as=3.96e-013 pd=2.52e-006 ps=2.52e-006 $ (29.76 25.02 30 25.62) M1 1 2 gnd gnd NMOS l=2.4e-007 w=6e-007 ad=3.96e-013 as=3.96e-013 pd=2.52e-006 ps=2.52e-006 $ (29.76 25.02 30 25.62) v1 vdd GND 3.3 v2 2 gnd PULSE (0 3.3 0 1n 1n 3n 8n)

.lib "D:\Tanner_files\Generic_025.lib" tt

.tran .01n 18n .print tran v(1,gnd) v(2,gnd) p(v1)

Results Pdmax= 456.36uW