Sts1hnk60 Datasheet, PDF
description
Transcript of Sts1hnk60 Datasheet, PDF
-
1/8August 2003
STS1HNK60N-CHANNEL 600V - 8 - 0.3A SO-8
SuperMESHPower MOSFET
n TYPICAL RDS(on) = 8 n EXTREMELY HIGH dv/dt CAPABILITYn 100% AVALANCHE TESTEDn GATE CHARGE MINIMIZEDn NEW HIGH VOLTAGE BENCHMARK
DESCRIPTIONThe SuperMESH series is obtained through anextreme optimization of STs well established strip-based PowerMESH layout. In addition to pushingon-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for themost demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh products.
APPLICATIONSn SWITCH MODE LOW POWER SUPPLIES(SMPS)
n LOW POWER, LOW COST CFL (COMPACTFLUORESCENT LAMPS)
n LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
TYPE VDSS RDS(on) ID Pw
STS1HNK60 600 V < 8.5 0.3 A 2 W
SALES TYPE MARKING PACKAGE PACKAGING
STS1HNK60 S1HNK60 SO-8 TAPE & REEL
SO-8
INTERNAL SCHEMATIC DIAGRAM
-
STS1HNK60
2/8
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area(1) ISD 0.3A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX.
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)ON/OFF
Symbol Parameter Value UnitVDS Drain-source Voltage (VGS = 0) 600 VVDGR Drain-gate Voltage (RGS = 20 k) 600 VVGS Gate- source Voltage 30 VID Drain Current (continuous) at TC = 25C 0.3 AID Drain Current (continuous) at TC = 100C 0.19 A
IDM () Drain Current (pulsed) 1.2 APTOT Total Dissipation at TC = 25C 2 W
Derating Factor 0.016 W/Cdv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
TjTstg
Operating Junction TemperatureStorage Temperature -65 to 150 C
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
Symbol Parameter Test Conditions Min. Typ. Max. UnitV(BR)DSS Drain-source
Breakdown VoltageID = 1 mA, VGS = 0 600 V
IDSS Zero Gate VoltageDrain Current (VGS = 0)
VDS = Max RatingVDS = Max Rating, TC = 125 C
150
AA
IGSS Gate-body LeakageCurrent (VDS = 0)
VGS = 30 V 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.25 3 3.7 VRDS(on) Static Drain-source On
ResistanceVGS = 10 V, ID = 0.5 A 8 8.5
-
3/8
STS1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unitgfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max,
ID = 0.5 A1 S
CissCossCrss
Input CapacitanceOutput CapacitanceReverse TransferCapacitance
VDS = 25V, f = 1 MHz, VGS = 0 15623.53.8
pFpFpF
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(on)tr
Turn-on Delay TimeRise Time
VDD = 300 V, ID = 0.5 ARG = 4.7 VGS = 10 V(Resistive Load see, Figure 3)
6.55
nsns
QgQgsQgd
Total Gate ChargeGate-Source ChargeGate-Drain Charge
VDD = 480 V, ID = 1 A,VGS = 10V, RG = 4.7
71.13.4
10 nCnCnC
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(off)tf
Turn-off Delay TimeFall Time
VDD = 300 V, ID = 0.5 ARG = 4.7 VGS = 10 V(Resistive Load see, Figure 3)
1925
nsns
tr(Voff)tftc
Off-voltage Rise TimeFall TimeCross-over Time
VDD = 480V, ID = 1.0 A,RG = 4.7, VGS = 10V(Inductive Load see, Figure 5)
242544
nsnsns
Symbol Parameter Test Conditions Min. Typ. Max. UnitISD
ISDM (2)Source-drain CurrentSource-drain Current (pulsed)
0.31.2
AA
VSD (1) Forward On Voltage ISD = 0.3 A, VGS = 0 1.6 VtrrQrrIRRM
Reverse Recovery TimeReverse Recovery ChargeReverse Recovery Current
ISD = 0.3 A, di/dt = 100 A/sVDD = 25 V, Tj = 150C(see test circuit, Figure 5)
2293773.3
nsCA
-
STS1HNK60
4/8
Thermal Impedance
Static Drain-source On ResistanceTransconductance
Output Characteristics
Safe Operating Area
Transfer Characteristics
-
5/8
STS1HNK60
Normalized BVDSS vs Temperature
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Gate Charge vs Gate-source Voltage Capacitance Variations
Source-drain Diode Forward Characteristics
-
STS1HNK60
6/8
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit ForResistive Load
-
7/8
STS1HNK60
DIM. mm inchMIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068a1 0.1 0.25 0.003 0.009
a2 1.65 0.064a3 0.65 0.85 0.025 0.033b 0.35 0.48 0.013 0.018b1 0.19 0.25 0.007 0.010C 0.25 0.5 0.010 0.019c1 45 (typ.)D 4.8 5.0 0.188 0.196E 5.8 6.2 0.228 0.244
e 1.27 0.050e3 3.81 0.150F 3.8 4.0 0.14 0.157L 0.4 1.27 0.015 0.050
M 0.6 0.023S 8 (max.)
0016023
SO-8 MECHANICAL DATA
-
STS1HNK60
8/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may result fromits use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices orsystems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com