140th Annual Meeting & Exhibition

Supplemental Proceedings Volume 3:

General Paper Selections

About this volume The TMS 2011 Annual Meeting Supplemental Proceedings, Volume 3: General paper Selections, is a collection of papers from the 2011 TMS Annual Meeting and Exhibition, held February 27-March 3, in San Diego, California, U.S.A. The papers in this volume were selected based on technical topic compatibility and represent five symposia from the meeting. This volume, along with the other proceedings volumes published for the meeting, and archival journals, such as Metallurgical and Materials Transactions and the Journal of Electronic Materials, represents the available written record of the 74 symposia held at the 2011 TMS Annual Meeting. The individual papers presented within this proceedings volume have not necessarily been edited or reviewed by the conference program organizers and are presented "as is." The opinions and statements expressed within the papers are those of the individual authors only and are not necessarily those of anyone else associated with the proceedings volume. the source conference, or TMS. No confirmations or endorsements are intended or implied.

©WILEY A John Wiley & Sons, Inc., Publication

TUS

TMS2011

This page intentionally left blank

TMS2011 140th Annual Meeting & Exhibition

Supplemental Proceedings Volume 3:

General Paper Selections

TMS2011 140th Annual Meeting & Exhibition

Check out these new proceeding volumes from the TMS 2011 Annual Meeting, available from publisher John Wiley & Sons:

2nd International Symposium on High-Temperature Metallurgical Processing Energy Technology 2011 :

Carbon Dioxide and Other Greenhouse Gas Reduction Metallurgy and Waste Heat Recovery EPD Congress 2011

Friction Stir Welding and Processing VI Light Metals 2011

Magnesium Technology 2011 Recycling of Electronic Waste II, Proceedings of the Second Symposium

Sensors, Sampling and Simulation for Process Control Shape Casting: Fourth International Symposium 2011

Supplemental Proceedings: Volume 1: Materials Processing and Energy Materials

Supplemental Proceedings: Volume 2: Materials Fabrication, Properties, Characterization, and Modeling

Supplemental Proceedings: Volume 3: General Paper Selections

To purchase any of these books, please visit www.wiley.com.

TMS members should visit www.bns.org to learn how to get discounts on these or other books through Wiley.

140th Annual Meeting & Exhibition

Supplemental Proceedings Volume 3:

General Paper Selections

About this volume The TMS 2011 Annual Meeting Supplemental Proceedings, Volume 3: General paper Selections, is a collection of papers from the 2011 TMS Annual Meeting and Exhibition, held February 27-March 3, in San Diego, California, U.S.A. The papers in this volume were selected based on technical topic compatibility and represent five symposia from the meeting. This volume, along with the other proceedings volumes published for the meeting, and archival journals, such as Metallurgical and Materials Transactions and the Journal of Electronic Materials, represents the available written record of the 74 symposia held at the 2011 TMS Annual Meeting. The individual papers presented within this proceedings volume have not necessarily been edited or reviewed by the conference program organizers and are presented "as is." The opinions and statements expressed within the papers are those of the individual authors only and are not necessarily those of anyone else associated with the proceedings volume. the source conference, or TMS. No confirmations or endorsements are intended or implied.

©WILEY A John Wiley & Sons, Inc., Publication

TUS

TMS2011

Copyright © 2011 by The Minerals, Metals, & Materials Society. AH rights reserved.

Published by John Wiley & Sons, Inc., Hoboken, New Jersey. Published simultaneously in Canada.

No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, recording, scanning, or otherwise, except as permitted under Section 107 or 108 of the 1976 United States Copyright Act, without either the prior written permission of The Minerals, Metals, & Materials Society, or authorization through payment of the appropriate per-copy fee to the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, (978) 750-8400, fax (978) 750-4470, or on the web at www.copyright.com. Requests to the Publisher for permission should be addressed to the Permissions Department, John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, (201) 748-6011, fax (201) 748-6008, or online at http:// www.wiley.com/go/permission.

Limit of Liability/Disclaimer of Warranty: While the publisher and author have used their best efforts in preparing this book, they make no representations or warranties with respect to the accuracy or completeness of the contents of this book and specifically disclaim any implied warranties of mer-chantability or fitness for a particular purpose. No warranty may be created or extended by sales rep-resentatives or written sales materials. The advice and strategies contained herein may not be suitable for your situation. You should consult with a professional where appropriate. Neither the publisher nor author shall be liable for any loss of profit or any other commercial damages, including but not limited to special, incidental, consequential, or other damages.

Wiley also publishes books in a variety of electronic formats. Some content that appears in print may not be available in electronic formats. For more information about Wiley products, visit the web site at www.wiley.com. For general information on other Wiley products and services or for technical sup-port, please contact the Wiley Customer Care Department within the United States at (800) 762-2974, outside the United States at (317) 572-3993 or fax (317) 572-4002.

Library of Congress Cataloging-in-Publication Data is available.

ISBN 978-1-11802-947-3

Printed in the United States of America.

1 0 9 8 7 6 5 4 3 2 1

WILEY TIMS A John Wiley & Sons, Inc., Publication

TABLE OF CONTENTS Supplemental Proceedings: Volume 3: General

Paper Selections

General Abstracts: Electronic, Magnetic and Photonic Materials Division

Session I

Investigation of Electronic Properties for Nano-Titania/Metal-Ion-Doped Titania Semiconductor Prepared by Sol-Gel Methods 3

L. Liau, and C. Ma

Structure and Magnetic Properties Characterization of Electrodeposited Co37Fe63 Alloys Containing Oxygen for Magnetic Recording Applications 11

S. Elhalawaty, R. Carpenter, J. George, andS. Brankovic

Tungsten Doping Effect on Thermoelectric Properties of Heusler Fe2VAl Alloy 19

H. Morishita, M. Mikami, K. Ozaki, and K. Kobayashi

Session II

Tatalum Nitride for Efficient Visible-Light-Driven Photocatalyst 25 Z. Wang, J. Wang, L. Liu, K. Huang, J. Hou, and H. Zhu

Failure Mechanism of Electrode in Crystalline Photovoltaics 31 C. Oh, N. Park, C. Han, and W. Hong

Synthesis of Nano-Sized Tantalum Nitrides with Various Morphology 37 L. Liu, C. Ma, Z. Wang, K. Huang, S. Jiao, and H Zhu

Development of New Transparent Conductive Material of Mg(OH].xCx)2 ( x = 0.1-0.35 ) by Magnetron Sputtering 43

T. Honjo, and T. Kuji

Synthesis of Ultrafine Single Crystals and Nanostructured Coatings of Indium Oxide from Solution Precursor 51

N. Pentyala, R. Guduru, P. Mohanty, andE. Shnerpunas

v

Reliability of Wedge Wire Bonds Subjected to Ultrasonic Welding and Thermal Cycling 59

A. Saigal, M Zimmerman, andJ. Battaglia

General Abstracts: Light Metals Division

General Light Metals

Determination of Heat Treatment Effect on 6XXX Series Aluminum Foams by Design of Experiment 69

D. Deniz Polat, B. Ozkal, and O. Keles

Effect of Reacted Layer on Galvanic Corrosion Phenomenon at Interface Between Ti Dispersion and Mg-Al Alloy 93

K. Kondoh, N. Nakanishi, R. Takei, andJ. Umeda

Compressive Capacity and Fracture Mechanism of Aluminum Foam 101 H. Hao, G. Lu, M Diop, H. Dong, andX. Zhang

LiAl Alloy Prepared by Bulk Mechanical Alloying 109 T. Honjo, and T. Kuji

Metal Matrix Composites

Preparation and Characterization of Cast Hypereutectic Al-20wt.%Si-4.5wt.%Cu Nanocomposites with A1203 Nanoparticles 117

H. Choi, andX. Li

An Investigation of Nanoparticle Wetting, Grain Refinement and Mechanical Property Enhancement in Aluminum Matrix Nanocomposites 123

M. De Cicco, D. Wang, andX. Li

Stability of Nanoparticle Dispersion and Property Enhancement in Aluminum Matrix Nanocomposites during Repeated Casting Cycles 131

D. Wang, M. De Cicco, andX. Li

Preparation Process of Aluminum Foam Reinforced by Carbon Fibers 139 H. Luo, Y. Liu, P. Chen, andZ. Zhao

Influence of Processing Parameters on Distribution of Fibers in Cast Aluminium Matrix 147

P. Yan, G. Yao, J. Shi, andX. Sun

VI

Primary Production and General Issues A Model for the Collapse of the World Trade Center 155

C. Simensen

Analysis on the Market Developing Conditions of Prebaked Carbon Anodes for the Aluminium Industries 163

G. Lang, C. Fu, R. Logan, and Y. Li

Removal of Fluoride from Waste Water of Aluminum Smelter by Aluminum Ion Loaded Ion Exchange Resin 167

B. Padhi, and A. Sharma

Corrosion Behavior of Cermet Anodes in Na3AlF6-K3AlF6-Based Baths for Low-Temperature Aluminum Electrolysis Cells 175

G. Wang, X. Sun, W. Wang, D. Wang, and Y. He

Preparation of Al-Mg Alloys from MgO in KCl-MgF2-LiF Electrolyte by Molten Salt Electrolysis Method 183

F. Yang, S. Yang, X. Hu, Z. Wang, Z. Shi, andB. Gao

General Abstracts: Materials Processing and Manufacturing Division

Casting, Surface Modification, and Powder Processing

Calcium Silicate-Graphite-Compound, a New Material for the Flow Control of Liquid Aluminum Alloys 189

W. Huetiner, T. Hoelscher, M. Quackenbush, and R. Smith

Influence of a Direct Current on the Solidification Behavior of Pure Aluminum 197

Y. Zhang, C. Song, L. Zhu, H. Zheng, and Q. Zhai

Influence of Heating Effect on the Solidified Structure of Pure Aluminum by Electric Current Pulse 203

Z. Yin, B. Li, Y Gong, andQ. Zhai

Manufacturing Methods and Properties of Powder-Based Parts with Inherently Saved Information 211

B. Behrens, N. Vahed, F. Lange, and E. Gastan

vu

Microstructure and Mechanical Properties of Al Based Composite Coatings Produced by the Cold Gas Dynamic Spraying Process 219

0, Meydanoglu, M, Baydogan, E. Kayali, and H. Cimenoglu

Optimization of Fiber Laser Produced Hastelloy C-276 Single Track Clad 227 P. Leggett, P. Balu, R. Kovacevic, andS. Hamid

Preparation of Nanocrystalline Aluminum by Warm-Vacuum-Compaction Method 237

W. Liu, and Q. Zhou

The Microstructure and Mechanical Properties of Direct-Quenched and Tempered AISI4140 Steel 245

R. Ghasemzadeh, A. Meysami, H. Seyedyn, M. Aboutalebi, andR. Rezaei

Surface Characteristics and High Temperature Oxidation Resistance Performance of Stainless Steel Foam Modified by Pack Aluminizing and Moderate Oxidation 255

D. Huo, X. Zhou, H. Wang, J. Li, and P. Zhu

Development of Copper Coating on Austenitic Stainless Steel through Microwave Hybrid Heating 263

D. Gupta, and A. Sharma

Forging, Forming, and Machining

A New Method for the Determination of Formability Limit in the Tube Drawing Process 271

H. Bui, R. Bihamta, M. Guillot, G. D'Amours, A. Rahem, andM. F afar d

A Novel Method for Joining of Stainless Steel (SS-316) Through Microwave Energy 279

M. Srinath, A. Sharma, and P. Kumar

A Reliable Method for Determining the Solidification Force of Steel for Continuous Casting Conditions 287

M Rowan

An Investigation into the Laser Micro-Welding of Aluminum and Copper in Lap Joint Configuration 295

P. Balu, B. Carlson, andR. Kovacevic

vin

Deformation of High Purity Copper Specimens in Compression between Flat and Grooved Dies 309

B. Raddad, T. Al-hashani, and M. Rahman

Local Strain Hardening of Massive Forming Components by Means of Martensite Generation 317

B. Behrens, andJ. Knigge

Profile of Electrochemically Machined Microcomponents 325 N. Hung, L. Viswanathan, and M. Powers

Some Studies on Performance of a Natural Polymer Media for Abrasive Flow Machining 333

S. Rajesha, A. Sharma, and P. Kumar

Modeling, Simulation, Ceramics, and Chemical Processing

A Finite Element-Phase Field Study of Solid State Phase Transformation: Coarsening of Coherent Precipitates and Instability of Multilayer Thin Films 341

M. Zaeem, H. El Kadiri, S. Mesaroivc, P. Wang, andM. Horstemeyer

Development of a New Modeling Technique for Die Geometry for Extrusion of LCP Films 349

A. Ahmadzadegan, M. Zimmerman, and A. Saigal

Microwave Drying of Silica Sand: Modeling, Kinetics, and Energy Consumption 357

Y. Li, Y. Lei, H. Niu, L. Zhang, J. Peng, H. Luo, and W. Qu

Structural and Thermal Stability of Microwave Synthesized Nano-Hydroxyapatite 365

M. Khan, R. Hussain, M. Akram, andN. Iqbal

A Study on the Hydrophobicity and Investigation of Physical and Chemical Properties of Produced Zinc Borate 373

M Piskin, N. Acarali, N. Tugrul, E. Derun, and O. Akgun

Investigation of Reaction Conditions Effecting Hydrophobicity on Zinc Borate Yield 379

S. Piskin, N. Acarali, E. Derun, andN. Tugrul

IX

Effect of Iron Additions on the Shape Memory Characteristics of Cu-Al Alloys , 385

T. Raju, and V. Sampath

General Abstracts: Structural Materials Division

Effects of Differential Oxygen Access on the Corrosion Behavior of Zinc Relevant to Mechanically Stabilized Earth Walls 395

V. Padilla, and A. Alfantazi

Analysis of Eutectically Soldered Silicon Chips on a Copper Flanges with Innovative "Ductile Layer" Technology 405

P. Zhou, M. Zimmerman, and A. Saigal

Influence of Sulfide on Internal-Fracture-Type Rolling Contact Fatigue Life of Bearing Steels 413

K. Hashimoto, K. Hiraoka, and K. Kida

Shear Capacity of Reinforced Concrete Beams Using Recycled Coarse Aggregates 419

E. Ikponmwosa, andM. Salau

Influence of Heterogeneous Deformation on Microstructual Cracking in Alpha-Titanium Alloys 427

M. Morita, S. Moroka, and O. Umezawa

Deformation Behavior of Biomédical Co-Cr-Mo Alloy 433 H. Matsumoto, S. Kurosu, B. Lee, Y. Li, Y. Koizumi, and A. Chiba

Effects of Solution Temperatures on Creep Properties and Fracture Mechanism of FGH95 Nickel-Base Superalloy 439

J. Xie, S. Tian, X. Zhou, J. Li, and W. Wang

Effect of Hydrogen on Tensile Properties of a Ductile Cast Iron 447 H. Matsunaga, K. Matsuno, and K. Hayashida

x

Microstructure Microstructural Properties of Gamma Titanium Aluminide Manufactured by Electron Beam Melting 455

S. Franzén, J. Karlsson, R. Dehoff, U. Ackelid, O. Rios, C. Parish, and W. Peters

A New Method for Constructing Coincident Site Lattices for Cubic Crystals 463

M. Shamsuzzoha

Mechanical Properties and Strain Mechanisms Analysis in Ti-5553 Titanium Alloy 471

T. Duval, P. Villechaise, and S. Andrieu

Static Recrystallization Behavior of Co-Ni-Cr-Mo Superalloy After Cold Rolling and Subsequent Heat Treatment 479

T. Otomo, S. Kurosu, Y. Li, H. Matsumoto, S. Sato, Y. Koizumi, K. Wagatsuma, and A. Chiba

Processing

Using Resistance Heating to Create Full-Scale API RP2Z CTOD Samples ....485 M. Gallagher, S. Babu, andJ. Gould

Role of Heat Treatments on the Mechanical Properties of Dual-Phase Steel Sheet 493

H. Seyedrezai, K. Pilkey, andD. Boyd

Preparing Titanium Powders by Calcium Vapor Reduction Process of Titanium Dioxide 501

B. Xu, B. Yang, H. Wan, W. Sen, Y. Dai, andD. Liu

The Microstructure and Mechanical Properties of Direct-Quenched and Tempered AISI4140 Steel 509

R. Ghasemzadeh, A. Meysami, H. Seyedyn, M. Aboutalebi, andR. Rezaei

XI

General Poster Session

Session I Study on the Interface Behavior of Ore Powder in Organic Media 521

L. Dan, C. Qiyuan, and Y. Zhoulan

Study on Preparation of ZnO/Ti02 and Its Photocatalytic Activity 529 W. Daoxin, X. Changbin, and T. Haixia

Study on Thermal Decomposition of Precursor of Nb5+ Doped Rutile Ti02 Treated by Ultrasonic 537

W. Daoxin

Three-Dimension Electrode Device Assembled from Bamboo Char Loaded Nano Ferric Oxide for Catalytic Treatment of Organic Wastewater 545

L. Dan, G. Suli, Z. Ling, L. Jun, Z. Jintao, andM. Qiujie

Three-Dimension Electrode Device with Bamboo Char Loaded Nano-Cobalt Oxide for Catalytic Degradation of Organic Pollutant in Wastewater 553

Z. Ling, Z. Lidan, G. Suli, L. Jun, L. Tiang, J. Xiaocui, D. Chenlin, G. Fan, andL. Mi

Diffusion Bonding Process for Aerospace Components 561 H. Lee, J. Yoon, and D. Shin

Coarsening of ß Precipitates in an Isothermally-Aged Fe75-Niio-Ali5 Alloy 569

O. Soriano-Vargas, V. Lopez-Hirata, H. Dorantes-Rosales, M. Saucedo-Muñoz, E. Avila-Davila, and S. Lezama-Alvarez

Experimental Simulation on the Continuous Casting Solidified Structure of S32205 Duplex Stainless Steel 577

X. Chen, Q. Sun, L. Ao, H. Zhong, H. Zheng, Q. Zhai, andZ. Li

Wettability Testing forNi/Ti(CN) System in High Temperature 585 K. Shimojima, H. Hosokawa, K. Kato, and A. Matsumoto

Effect of Stirring on the Solidification Structure and Segregation of 60Si2MnA Spring Steel during Continuous Casting 589

L. Ao, X. Chen, H. Zhong, Q. Sun, H. Zheng, Z. Li, andQ. Zhai

xn

Effect of Pulse Magnetic Field on Normal Grain Growth of Grain Oriented Silicon Steels during Primary Recrystallization Annealing 599

Q. Xia, L. Li, J. Huang, L. Liu, and Q. Zhai

Optical Properties and Electrical Properties of Transparent Conductive Films of Magnesium Hydroxide Based Compounds 605

M Chiba, M Higashi, H. Kiyota, M. Maizono, and T. Kuji

Synthesis and Characterization of Flame Retarding UV-Curable Boron Containing Hybrid Coatings 613

B. Zeytuncu, V. Kahraman, and O. Yucel

Preparation of (Ti0.8Moo.2)C-Ni Cermets by Mechanical Alloying 619 H. Hosokawa, K. Kato, K. Shimojima, and A. Matsumoto

Aerosol Route Synthesis of Lithium Borate Spheres Using Lithium Nitrate and Boric Acid Solution 625

B. Ebin, S. Gurmen, and C. Ars I an

Synthesis of Nanocrystalline Cu3B206 Particles by Ultrasonic Spray Pyrolysis Method 631

B. Ebin, S. Gurmen, and C. Arslan

Study on the Microstructure Evolution of Fe-6.5wt.%Si Powders Fabricated by High Pressure Gas Atomization 635

L. Zhu, K. Li, Y. Guo, G Song, Q. Zhai, and Y. Zhang

Microstructural and Mechanical Performance of Cold-Rolled Al Base Alloys 643

S. Casolco, andS. Vaidez

Research on the Carbothermic Reduction Conditions of Mill Scale from Continuous Casting Processes 651

F. D emir ci, and O. Yucel

Effects of Silicon Content and Cooling Rate on Distribution and Size of Inclusion in Silicon Steel Thin Strip 661

Q. Peng, L. Wang, X. He, R. Yang, C. Song, and Q. Zhai

A Low Cost Method for Manufacturing of Aluminum/Alumina Composite by Anodizing and CRB Process 669

R. Jamaati, M. Toroghinejad, andE. Zahrani

xm

Influences of Alloying Elements on Grain Sizes in Friction Stir Processed Pure Aluminum and Aluminum Alloys 677

T. Hirata, T. Morishige, M, Tsujikawa, andK. Higashi

Nanocomposites Based on Polymer Blends: Effect of the Organoclay on the Thermo-Mechanical Properties and Morphology of PA6/HDPE and PA6/Compatibilizer/HDPE Blends 685

P. Agrawal, A. Oliveira, G Brito, C. Cunha, E. Araújo, and T. Melo

Thoughened Poly (Acid Lactic): Mechanical and Morphological Characterizations 693

G. Brito, T. Melo, P. Agrawal, C. Cunha, andE. Araújo

Toughening of ADI Austenitized in Intercritical Region 701 J. Chen, B. Chen, andJ. Tsai

Development and Characterization of Milled Silver Powder Addition to Polypropylene Feedstock for Injection Molding 709

K. Yumakgil, A. Sôyler, G. Yilmaz, C. Tamerler, andB. Özkal

Horizontal Directional Solidification of Zn-Al Alloys 717 A. Ares, S. Gueijman, and C. Schvezov

Electron Beam Melting and Recycling of Hafnium 725 K. Vutova, V. Vassileva, G. Mladenov, E. Koleva, T. Prakash, andN. Munirathnam

Modeling of Weld Penetration in High Velocity GTAW 733 U. Duman, and P. Méndez

Electrosynthesis, Characterization, and Thermal Property Analysis of Pentakis (Diethylamido) Tantalum 741

J. Yang

Separation of Antimony from a Stibnite Concentrate through a Low-Temperature Smelting Process to Eliminate S02 emission 749

J. Yang, C. Tang, Y. Chen, J. He, and M. Tang

Generation and Control of Two Way Shape Memory Effect for SMA Coil Spring 757

K. Jee, J. Han, W. Jang, andJ. Park

xiv

Water Modeling of Optimization of Two-Strand Tundish Configuration for Slab Continuous Casting with Gas Bubbling 765

S. Zheng

Preparation and Current Distribution Performance of Pb-Al Layered Composite Anode Materials 771

S. Zhou, P. Zhu, Y. Sun, andL. Sun

Characteristics of the Gas Dispersion Generated through a Jet Sparger in Aqueous Media 777

F. Tavera, andR. Escudero

Thermodynamic Study for Cleaning Water Contaminated with Cu, Pb,andNi 791

R. Escudero, F. Tavera, and E. Espinoza

Correlation of Porosity Detected by Computed Tomography and Fatigue Strength of Aluminium Alloys 803

T. Pabel, G. Geier, D. Habe, J. Rose, P. Schumacher, and T. Petkov

C02-Corrosion of Steels Exposed to Saline Water Environment 807 A. Pfennig, B. Linke, S. Schulz, and A. Kranzmann

Evaluation of the Effect of Residual Silver in Copper on the Cementation Process by Factorial Design and Multiple Regression Analysis 815

D. Agaogullari, 1. Duman, and Ö. Keles

Intermetallic Phases and Microstructure in AISi Alloys Influenced by Fluid Flow 825

P. Mikolajczak, and L. Rathe

Effects of A1-5TÍ-1B Grain Refiner on the Structure, Hardness and Tensile Properties of a New Developed Super High Strength Aluminum Alloy 833

M. Alipour, M. Emamy, J. Rasizadeh, M. Azarbarmas, andM. Karamouz

Effect of Predeformation and Heat Treatment Conditions in the Modified SIMA Process on Microstructural of a New Developed Super High-Strength Aluminium Alloy Modified by A1-8B Grain Refiner 843

M. Alipour, M. Emamy, J. Rasizadeh, M. Karamouz, andM. Azarbarmas

xv

The Effects of A1-5TÍ-1B Grain Refiner and Heat Treatment on the Microstructure and Dry Sliding Wear Behavior of a New Developed Super High-Strength Aluminum Alloy 855

M. Alipour, M, Emamy, J, Rasizadeh, M. Karamouz, and M. Azarbarmas

Combined Processing of ECAP and Cold Rolling to Enhance the Performance of Metallic Materials 867

H. Miyamoto, T.Xiao, and T. Uenoya

The Effects of Be on Mechanical Properties of Al-Mg2Si In Situ Composite 873

M. Azarbarmas, M. Emamy, J. Rasizadeh, M. Alipour, and M. Karamouz

The Effects of Cooling Rate on the Microstructure and Hardness of Al-15wt.%Mg2Si In Situ Composite with Boron 883

M. Azarbarmas, M. Emamy, J. Rasizadeh, M. Karamouz, andM. Alipour

Explosive Generation of High Pressures and Temperatures and Areas of Their Application 891

N. Chikhradze, and V. Kabulashvili

The Effects of Li Additions on the Microstructure and Mechanical Properties of 380 Aluminum Casting Alloys 899

M. Ravari, M. Emamy, J. Rasizadeh, M. Alipour, andM. Azarbarmas

The Influence of Li on Properties of 380 Aluminum Casting Alloys 907 M Karamouz, M. Emamy, J. Rasizadeh, M. Azarbarmas, andM. Alipour

Microstructural and Mechanical Properties (hardness) Investigations of 0.61%A1-1.1 l%Si Austempered Ductile Iron 915

A. Kiani-Rashid, and B. Hashemi

Author Index 923

Subject Index 927

xvi

TIMIS2011 140th Annual Meeting & Exhibition

General Abstracts: Electronic, Magnetic and

Photonic Materials Division

The proceedings contained in this section have not been edited or reviewed by the conference program organizers. The opinions and statements expressed in the proceedings are those of the authors only and are not necessarily those of the editors or TMS staff. No confirmations or endorsements are intended or implied.

This page intentionally left blank

Supplemental Proceedings: Volume 3: General Paper Selections TMS (The Minerals, Metals & Materials Society), 2011

INVESTIGATION OF ELECTRONIC PROPERTIES FORNANO-TATANIA/METAL-ION-DOPED TITANIA SEMICONDUCTOR PREPARED

BY SOL-GEL METHODS

Leo Chau-Kuang Liau, Chih-Kang Ma

Yuan Ze Fuel Cell Center, Department of Chemical Engineering and Materials Science, Yuan Ze University, Chung-Li 320, Taiwan

Phone: +886-3-4638800-2573, Fax: +886-3-4559373 e-mail: lckliau@saturn.vzu.edu.tw

Keywords: T1O2 nanoparticles, junction diode, I-V measurement, Metal-ion-doped T1O2

Abstract

Semiconductor homojunction devices were designed and fabricated by coating a metal-ion-doped T1O2 film on top of a T1O2 nanoparticle film. The sample films were prepared with synthesized sol-gel T1O2, verified to be nano-size particles with anatase structure. The semiconductor characteristics of the ion-doped and undoped films were analyzed by current-voltage (I-V) and Hall Effect measurements. Results showed that the semiconductor properties of T1O2 were greatly influenced by doping with different types and amounts of metal ions, i.e. Fe2+, Cr3+, Zn +, and Ag+. The semiconductor characteristics of the TiCVmetal-ion-doped Ti02 devices, such as onset voltage and rectifying curves, were affected by the fabrication of the ion-doped layer. The fabricating conditions of the ion-doped layer, i.e. thickness, and types and amounts of metal ions, can change the semiconductor properties of the device.

Introduction

The uses of nano-Ti02 semiconductor materials have been applied in many fields, such as photocatalysis [1], photovoltaic (dye-sensitized solar cells, DSSCs) [2], and solar-hydrogen systems [3], The opto-electrochemical characteristic of the nano-TiC>2 are one of the critical issues influencing the performance of these systems. The research and development of these systems has been focused on improving the performance of the devices by increasing the incident to photo-current conversion efficiency and lowering the conducting resistance of the photo-induced electrons through the transport pathway. Therefore, the recent investigation on the practical development and utilization of the materials is on the opto-electronic performance of the prepared T1O2 to improve the efficiency and stability of the devices for the applied systems.

Ion-doped T1O2 was studied and reported to influence light absorption ranges and electron conductivity significantly [4-6]. The modification methods of T1O2 doped with metal ions, such as Zn [7], Ag [8], Fe [9-10], Co [11], transition-ion-metal and lanthanide ions [12], were reported to increase the photocurrent or photocatalytic efficiency as the recombination of the photo-generated electrons and holes are reduced. Additionally, different types of T1O2 semiconductors (n- or p-type) were prepared by metal-ion-doped methods, reported from literature [7,12]. Although T1O2 with oxygen vacancies can be an n-type semiconductor, n-type T1O2 semiconductors can be also prepared by doping metal ions, such as Zn2+. Furthermore, p-type

3

Ti02 semiconductors can be prepared by doping with metal ions, such as Fe3+. The electronic and/or opto-electronic properties were reported to be altered by the ion-doped TÍO2 samples.

The other approach is to design an effective device to improve the opto-electronic properties. T1O2 electrodes with a p-n junction were fabricated and reported to enhance the efficiency of optoelectronic systems, such as DSSCs. From a semiconductor device viewpoint, a p-n junction structure can generate the internal electric field to accelerate the drift velocity for the movement of the free carriers. A p-n heterojunction electrode of DSSCs was designed and fabricated to improve the photovoltaic efficiency [13-15]. The fabrication of semiconductor junction of Ti02/Fe3+-doped T1O2 [10] and Ti02/Cr3+-doped Ti02 [16] devices was reported in our previously work. However, the electronic properties of these T1O2 samples were not discussed.

In this work, semiconductor junction devices produced from nano-Ti02 and metal-ion doped T1O2 materials were designed and fabricated by a nano-TiCVmetal-ion-doped T1O2 structure. Different types and amounts of metal ions were adopted to fabricate the metal-ion-doped layer of the diode. The electronic properties of the diode and each layer of the diode were determined using I-V data analysis. The effects of different fabrication conditions of the metal-ion-doped layer of the diodes were discussed according to the analytical results.

Experimental details Nano-Ti02 samples were fabricated using the sol-gel method reported previously [10]. The

sol-gel T1O2 was produced by mixing Titanium(IV) isopropoxide_(ACROS Corp.) with water at the mole ratio of 1:100 together with 0.1N nitric acid solution (PH = 1.5) at 80 °C for 8 hours. The prepared solution was then ready for further application. In addition, the metal-ion-doped T1O2 samples were prepared using a similar sol-gel procedure as described above, with the addition of metal ions, i.e. Fe(N03)3, Cr(N03)3, AgN03, or Zn(N03)2, into 0.1N nitric acid solution. The solution was dried and heated at 75 °C for 24 hours to obtain particle powders for analysis. The particle size was estimated to be 65 ± 18 nm by DLS (dynamic light scattering) analysis. The anatase phase of the T1O2 powders was demonstrated in our previous study [10].

1 1

Metal-ion-doped T1O2 layer

Nano-Ti02 layer

ITO glass

Figure 1. Schematic plot of the homojunction device in a forward bias operation.

The structure of the homojunction device consists of two layers which were fabricated using different nano-TiC^ samples as shown in Figure 1. The bottom layer of the device is designed using the synthetic nano-TiC>2 (n-layer) prepared with spin coating of sol-gel nano-TiCh on an

4

ITO glass substrate (15 Ω/ο). The dimension of the fabricated device sample is 1.5 cm x 1.5 cm. The coated samples are dried and heated at 60 °C for 8 hours. The undoped layer was then heated at 475 °C for one hour for the ceramic densification. After the thermal treatment, metal-ion-doped T1O2 was prepared with coating on top of the undoped layer. The sample films were heated again at 475 °C for one hour for the annealing of the metal-ion-doped films. The thickness of the coated films was evaluated by scanning electron microscopy (SEM) images.

The I-V measurements for the prepared diode samples were carried out utilizing a Keithley model 2400 SourceMeter test system. The test system contains a probe station with two probes which are electrically connected to the sourcemeter. The test sample was put on the probe station and each probe was individually contacted to the conductive substrate surface and to the surface of the sample. The I-V data were recorded by the sourcemeter and transmitted to a computer for further data analysis.

Results and discussion The semiconductor characteristics of the fabricated undoped and doped TiOj sample

films were evaluated by I-V measurements. The data of I-V curves, shown as a semiconductor characteristic, of the undoped T1O2 sample film is clearly detected as shown in Figure 2. However, the I-V curve was insignificant for the Fe3+-doped T1O2 case. It is probably because structure defects of this sample were formed due to the metal ion additives. The parameters that influence the electronic characteristic of the metal-doped T1O2 semiconductor are the doping concentration of the metal ion, heating temperature of the films, and film thickness. The semiconductor characteristics performed significantly if the samples were heated in higher temperatures. Furthermore, appropriate film thickness and metal-ion concentration were selected to improve the T1O2 semiconductor performance.

0.1

-0.1 -10 -6 0 6 10

Voltage (V)

Figure 2. I-V curves of the undoped T1O2 /l l mol% Fe3+-doped T1O2 films.

The undoped and metal-ion-doped T1O2 samples were used to prepare the homojunction device. The schematic plot of the device is shown in Figure l. The homojunction device was fabricated by coating of the metal-ion-doped layer on top of the undoped layer, which was

5

prepared using the synthetic nano-TiCh samples. Different Fe3+ concentrations were doped in the TiOj sol-gel solution used to fabricate the device. Figure 3 shows the I-V curves of the devices to illustrate the influence of the doping concentrations on the change in the electronic characteristic of the device. The significant rectifying curve was demonstrated for the 11 mole% case as shown in this figure.

0.01

0.008

0.006

'S 0.004 v S υ

0.002

0

-0.002 -10 -5 0 S 10

Voltage (V)

Figure 3. T1O2 / Fe3+-doped T1O2 films for the I-V curves of the samples with different Fe3+-doped concentrations.

If the undoped T1O2 layer was fixed at 2.2 μπι, the junction device with variant thickness of the Fe3+-doped layer was fabricated to evaluate the influence of its electronic properties. Figure 4 shows the I-V curves of the device fabricated by different thickness of the ion-doped layer. The rectifying curves demonstrate that the thickness of the ion-doped layer has a strong influence on the semiconductor performance for the fabricated diodes. The rectifying curves demonstrate the most significant performance if the thickness of the ion-doped layer is 1.3 μιη.

6

0.01

0.008

0.006

< w- 0.004 'S it

a 0.002 u

0

-0.002

-0.004 -10 -5 0 5 10

Voltage (V)

Figure 4.1-V curves of the junction devices fabricated using 2.2 μιη T1O2 layer with different thicknesses of the Fe3+-doped titania layer.

The diode was further fabricated using different types of metal ions and different amounts of metal-ion concentrations based on 1.26 and 2.2 μπι for the ion-doped and undoped layers, respectively. Different metal ions, such as Fe3+, Cr3+, Zn2+, Ag+, doped with nano-TiC>2 were also prepared by the sol-gel method. Figure 5 illustrated the I-V curves of the device prepared by different types of metal ions and concentrations used to fabricate the metal-ion-doped layer of the device. The effect of the metal-ion-doped T1O2 layer of the diode on the device properties are shown by the variation of the rectifying curves illustrated from the I-V data. The order of the rectifying current is estimated as 10"1 mA at 10 V under the forward bias for these cases except for the Fe3+-doped case. The rectifying current is nearly off under the reverse bias as shown in Figure 5. The Fe3+-doped T1O2 fabricated using different ion concentrations for this layer demonstrated the weakest rectifying signals among these cases. The Cr3+ and Zn2+-doped samples showed the lower onset (threshold) voltage (4 V) for these samples. However, if the ion-doped layer was prepared by T1O2 doped wift different concentrations of Ag+, the onset voltage shows the highest value (7 V), but the steepest rectifying slope. In addition, the Cr3+-doped sample appeared to have the most stable performance from the I-V curves among these cases. Furthermore, the most significant I-V curves were observed for the case of the ion concentration selected at 11 mole % as shown in Figure 5.

7

β.β

0.4

0.3

,β, t 0.2 Ë 9 U

0.1

o

-0.1 -10 -5 0 5 10

Voltage (V)

Figure 5.1-V curves of the junction device fabricated using different metal-ion types with 11 mol%.

The combination of the two layers can perform a junction diode behavior based on their different semiconductor properties. This homojunction device shows rectification only under forward bias. The electrons transported through this junction are of interest to be discussed according to the junction theory. For a forward bias, the electrons in the undoped layer obtained enough potential energy to propagate in the direction from the undoped layer to the ion-doped layer via the junction area. Electron hopping was the status of the electrons to go through Ti02 semiconductors during the electron-transfer process.

For a reverse bias case, the electrons in the ion-doped layer obtained a potential energy for electrons to transport in the direction of the undoped layer via the junction area. However, the mobility in this ion-doped layer showed much lower values for these metal-ion-doped cases of the diode. Furthermore, an energy barrier is presented in the junction area due to the formation of the electric field. An electric force can act on the electrons to hinder them from passing through the region. Therefore, the electrons in the ion-doped region have difficulty hopping through the ion-doped region and the junction area with an energy barrier. The currents cannot be clearly detected in the operating range due to the presence of the resistances under a reverse bias case. As a result, the I-V measurements did not show any obvious rectifying curves under the reverse bias compared with the forward bias operation.

Conclusions

8

Semiconductor properties of the nano-TiCVmetal-ion-doped T1O2 homojunction diode prepared from sol-gel methods were evaluated using I-V measurements. The semiconductor junction diode was formed due to the electronic property differences between the undoped T1O2 and the metal-ion-doped layers. The rectifying I-V characteristics were determined for the device from the I-V data analysis. The electronic characteristics of the diode were greatly influenced by the fabricating conditions of the metal-ion-doped layer, such as thickness, and the types and the amount of metal ions. The most significant rectifying curve among these cases was determined if the ion-doped layer was fabricated using 11 mole% Zn2+ concentration. The onset voltage and the rectifying curve of the diode are greatly influenced by these fabricating conditions for the metal-ion-doped layer of the homojunction device.

Acknowledgement

This work is partially supported by the National Science Council, Taiwan, R.O.C. under grant NSC95-2221-E-155-074. The financial support is gratefully acknowledged.

References [I] A. Fujishima, T.N. Rao and D. A. Tryk, J. Photochem. Photobiol. C: Photochem. Rev. 1

(2000) 1. [2] M. Grazel, J. Photochem. Photobiol. C: Photochem. Rev. 4 (2003) 145. [3] J. Nowotny, C. C. Sorrell, L.R. Sheppard and T. Bak, Int. J. Hydrogen Energy 30 (2005) 521. [4] W. Siripala, A. Ivanovskaya, T. F. Jaramillo, S. H. Bawck, E. W. McFarland, Sol. Energy Mater. Sol. Cells 77 (2003) 229. [5] J. Bandara, H.C. Weerasinghe, Sol. Energy Mater. Sol. Cells 88 (2005) 341. [6] X-T Zhang, H-W Liu, T.Taguchi, Q-B Meng, O. Sato, A. Fugishima, Sol. Energy Mater. Sol. Cells 81 (2004) 197. [7] Y. Wang, Y. Hao, H. Cheng, J. Ma, B. Xu, W. Li, S. Cai, J. Mater. Sei., 34 (1999) 2773. [8] S. Sen, S. Mahanty, S. Roy, O.Heintz, S. Bourgeois, D. Chaumont, Thin Solid Films, 474 (2005) 245. [9] M. Zhou, J. Yu, B. Cheng, H. Yu, Mater. Chem. Phys., 93 (2005) 159. [10] L. C.-K. Liau and C.-C. Lin, Appl. Surf. Sei. 253 (2007) 8798. [II] Pan D, Xu G, Wan J, Shi Z, Han M and Wang G 2006 Langmuir 22 5537. [12] Y. Wang, Y. Hao, J. Ma, W. Li, S. Cai, Thin Solid Films, 349 (1999) 120. [13] J. Bandara, U. W. Pradeep, R.G.S.J. Bandara, J. Photochem. Photobiol. A: Chem. 170 (2005) 273. [14] N. Uekaea, J. Kajiwara, K. Kakegawa, Y. Sasaki, J. colloid interface Sei. 250 (2002) 285. [15] M. Rusop, T. Shirata, P.M. Sirmanne, T. Soga, T. Jimbo, M. Umeno, Appl. Surf. Sei. 252 (2006) 7389. [16] L. C.-K. Liau and C.-C. Lin, Thin Solid Films 516 (2008) 2016.

9

This page intentionally left blank

Supplemental Proceedings: Volume 3: General Paper Selections TMS (The Minerals, Metals & Materials Society), 2011

STRUCTURE AND MAGNETIC PROPERTIES CHARACTERIZATION OF ELECTRODEPOSITED O ^ F e « ALLOYS CONTAINING OXYGEN

FOR MAGNETIC RECORDING APPLICATIONS

S. Elhalawaty a , R. W. Carpenterb, J. George c , S. R. Brankoviccd

"Materials Science and Engineering Graduate Program, School for Engineering of Matter, transport and Energy, Arizona State University, 85287-6106, USA

bLeRoy Eyring Center for Solid State Science, Arizona State University, AZ 85287-9506, USA

c Center for Nanomagnetic Systems, University of Houston, TX 77204-4005, USA d Electrical and Computer Engineering Department, University of Houston, TX 77204-

4005, USA

Keywords: Electrodeposition, TEM, SIMS, Magnetic properties

Abstract

Soft and high magnetic moment Co37Fe63 films were electro-deposited with variable additives on Cu/Ti/Si substrates. The correlation between structure and magnetic properties has been investigated. TEM showed the crystal structure of the films to be BCC with a <111> texture, and a grain size in the range of 10-20 nm. Oxygen in the deposited films has been identified by EDS and EELS using HAADF STEM. SIMS analysis revealed the presence of hydrogen and oxygen in the deposited CoFe films. Electron microscopy results showed that the oxygen was mainly distributed along the grain boundaries in the CoFe film. In regions where oxygen was present in the films, the Fe content was enhanced relative to Co. The magnetic properties of the deposits have been measured by Vibrating Sample Magnetometer (VSM), quantifying the impact of incorporated oxygen in the film on the saturation magnetization and the coercivity.

Introduction

Fe-Co alloys have been extensively used in perpendicular magnetic recording media, highly sensitive magnetic sensors, and magnetic biosensor technologies [1]. This is due to their soft ferromagnetic behavior, with high Curie temperature (~950°C), large saturation magnetic flux density (2.4 T), high permeability associated with the very low magnetocrystalline anisotropy K\ and low coercivity [2]. Given their high saturation magnetic flux density Bs, near equiatomic CoFe alloys become competitive for synthesis of magnetic recording heads among other soft magnetic alloys such as: Nisi Fei9 (Permalloy) with Bs of 1.05 T, N145 Fe3o C025 (Perminvar) with Bs of 1.55 T and Fe97 Si3 with Bsof 2.01 T [3], The increase in areal density of magnetic recording brought many of the processes involved in fabrication of magnetic heads to the level of nano-science for instance; vacuum evaporation [4], chemical vapor deposition [5], thermal decomposition (Pyrolysis) [6 ], ion implantation and spin casting [7], RF magnetron sputtering [8,9], and electrodeposition [10,11]. However, the most promising process is electrodeposition, which is capable of meeting the design requirements and

11

produces high quality pole tips by through-mask plating [12]. Additionally, it provides better soft magnetic properties corresponding to compositions, easily allows orientation of the deposited film anisotrapy, low energy requirements and low capital cost [13]. The magnetic properties of the deposited film are affected by synthesis parameters such as: current density, surface structure of the cathode (substrate), electrolyte composition, pH, and bath temperature, which in turn affect the film nanostructure [14]. In this study Co36Fes4 alloys have been electro-deposited on Si substrates with variable additives to incorporate oxygen, presumably as an oxide second phase in the films. The aim of this work is to describe the correlation between structure and magnetic properties of the deposited films.

Experimental Details

For this research, a standard three electrode cell configuration with solution volume of 250 mL was used to electrodeposit two Co40-37Fe 00-03 films. SI and S2, on Cu (seed layer thickness 200 nm)/Ti (adhesion layer thickness30 nm)/Si substrates. (100) Si wafer substrates were used to improve surface continuity and smoothness of the deposited films. Previously, different substrates have been used to deposit CoFe films, such as Cu and Al. However, surface quality was inferior to that of the film deposited on Si substrate. The electrodeposition was carried out under galvanostatic control. The aqueous solution compositions and electrodepositing parameters for both samples are described in Table 1. For the higher oxygen content specimen, S2, Fe3+

(0.0025M ) was introduced into the electrolyte solution by adding 0.5 g/L of Ferric Sulfate Fe2(SC>4)3, to control the amount of oxide phase in the deposited film [15].

Table I. Aqueous solution compositions Solution component Ferrous Sulfate heptahydrate, FeSC^JF^O Cobalt Sulfate heptahydrate, CoS04,7H20 Boric Acid, H3BO3 Ammonium Chloride,NH4Cl Saccharin Process parameters pH Electrodeposition Current Density Current Efficiency Rotation speed (ω) Deposition Rate Deposition Time

and electrodepositing parameters (g/L) 28 15 25 16 0.12

2.02 4mA/cm':

0.56-sample 1 / 0.43-sample 2 Orpm 48nm/min for SI / 36nm/min for S2 50mins

Cross-sectional TEM samples were prepared using focused ion beam (FIB) technique to minimize the mass of ferromagnetic specimen material. Structure and composition characterization of the grown films were analyzed using a TEM/STEM-2010F, equipped with a thin-window light-element-sensitive X-ray detector and an electron energy-loss spectrometer. Elemental depth profiles for Fe, Co, Cu and especially for H and O in the films were carried out by secondary ion mass spectroscopy (SIMS) using with a Cs+primary ion beam at 10 keV and -9000V sample voltage (impact energy of 19kV), a beam diameter of 50-75 μπι, and a beam current of 75 nA. The primary beam was rastered over 250 x 250 pjn area. The magnetic properties of the CoFe films were determined using Vibrating Sample Magnetometer (VSM) at room temperature.

12